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Panasonic Electronic Components |
MOSFET N-CH 100V 8A UG-1
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 15W (Tc)
- Rds On (Max) @ Id, Vgs: 230 mOhm @ 4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-G1
- Package / Case: U-G1
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Package: U-G1 |
Stock23,412 |
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MOSFET (Metal Oxide) | 100V | 8A (Tc) | 4V, 10V | 2.5V @ 1mA | - | 290pF @ 10V | ±20V | - | 1W (Ta), 15W (Tc) | 230 mOhm @ 4A, 10V | 150°C (TJ) | Surface Mount | U-G1 | U-G1 |
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Panasonic Electronic Components |
MOSFET N-CH 30V 10A 8HSSO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1.01mA
- Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1092pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 19W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 70A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSSO
- Package / Case: 8-SMD, Flat Lead
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Package: 8-SMD, Flat Lead |
Stock36,000 |
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MOSFET (Metal Oxide) | 30V | 10A (Ta), 19A (Tc) | 4.5V, 10V | 3V @ 1.01mA | 6.3nC @ 4.5V | 1092pF @ 10V | ±20V | - | 2W (Ta), 19W (Tc) | 10 mOhm @ 70A, 10V | 150°C (TJ) | Surface Mount | 8-HSSO | 8-SMD, Flat Lead |
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Panasonic Electronic Components |
MOSFET N-CH 20V 4.5A WSMINI6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
- Vgs(th) (Max) @ Id: 1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 17.5 mOhm @ 2A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: WSMini6-F1-B
- Package / Case: 6-SMD, Flat Leads
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Package: 6-SMD, Flat Leads |
Stock6,128 |
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MOSFET (Metal Oxide) | 20V | 4.5A (Ta) | 2.5V, 4V | 1.3V @ 1mA | - | 1730pF @ 10V | ±10V | - | 700mW (Ta) | 17.5 mOhm @ 2A, 4.5V | 150°C (TJ) | Surface Mount | WSMini6-F1-B | 6-SMD, Flat Leads |
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Panasonic Electronic Components |
MOSFET N-CH 200V 2.5A UG-1
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 10W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 1.25A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-G1
- Package / Case: U-G1
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Package: U-G1 |
Stock24,192 |
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MOSFET (Metal Oxide) | 200V | 2.5A (Tc) | 10V | 4V @ 1mA | - | 170pF @ 20V | ±20V | - | 1W (Ta), 10W (Tc) | 1.7 Ohm @ 1.25A, 10V | 150°C (TJ) | Surface Mount | U-G1 | U-G1 |
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Panasonic Electronic Components |
MOSFET N-CH 30V 7A 8HSSO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 519µA
- Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 658pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 13W (Tc)
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 4.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSSO
- Package / Case: 8-SMD, Flat Lead
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Package: 8-SMD, Flat Lead |
Stock120,000 |
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MOSFET (Metal Oxide) | 30V | 7A (Ta), 18A (Tc) | 4.5V, 10V | 3V @ 519µA | 3.9nC @ 4.5V | 658pF @ 10V | ±20V | - | 2W (Ta), 13W (Tc) | 24 mOhm @ 4.5A, 10V | 150°C (TJ) | Surface Mount | 8-HSSO | 8-SMD, Flat Lead |
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Panasonic Electronic Components |
MOSFET N CH 24V 3A PMCP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 24V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V
- Vgs(th) (Max) @ Id: 1.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 3A, 2.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-PMCP
- Package / Case: 3-SMD, Non-Standard
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Package: 3-SMD, Non-Standard |
Stock3,056 |
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MOSFET (Metal Oxide) | 24V | 3A (Ta) | 2.5V | 1.4V @ 1mA | - | 1500pF @ 10V | ±12V | - | - | 20 mOhm @ 3A, 2.5V | 150°C (TJ) | Surface Mount | 3-PMCP | 3-SMD, Non-Standard |
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Panasonic Electronic Components |
MOSFET P-CH 20V 1A WSSMINI6-F1
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 540mW (Ta)
- Rds On (Max) @ Id, Vgs: 420 mOhm @ 500mA, 4V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: WSSMini6-F1
- Package / Case: 6-SMD, Flat Leads
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Package: 6-SMD, Flat Leads |
Stock4,000 |
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MOSFET (Metal Oxide) | 20V | 1A (Ta) | 2.5V, 4V | 1.5V @ 1mA | - | 80pF @ 10V | ±12V | - | 540mW (Ta) | 420 mOhm @ 500mA, 4V | 150°C (TJ) | Surface Mount | WSSMini6-F1 | 6-SMD, Flat Leads |
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Panasonic Electronic Components |
MOSFET P-CH 12V 4A WSMINI6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 34 mOhm @ 1A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: WSMini6-F1-B
- Package / Case: 6-SMD, Flat Leads
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Package: 6-SMD, Flat Leads |
Stock4,400 |
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MOSFET (Metal Oxide) | 12V | 4A (Ta) | 1.8V, 4.5V | 1V @ 1mA | - | 1400pF @ 10V | ±8V | - | 700mW (Ta) | 34 mOhm @ 1A, 4.5V | 150°C (TJ) | Surface Mount | WSMini6-F1-B | 6-SMD, Flat Leads |
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Panasonic Electronic Components |
MOSFET P-CH 12V 4A WSMINI6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 34 mOhm @ 1A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: WSMini6-F1-B
- Package / Case: 6-SMD, Flat Leads
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Package: 6-SMD, Flat Leads |
Stock5,008 |
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MOSFET (Metal Oxide) | 12V | 4A (Ta) | 1.8V, 4.5V | 1V @ 1mA | - | 1400pF @ 10V | ±8V | - | 700mW (Ta) | 34 mOhm @ 1A, 4.5V | 150°C (TJ) | Surface Mount | WSMini6-F1-B | 6-SMD, Flat Leads |
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Panasonic Electronic Components |
MOSFET N-CH 20V 2.2A WSSMINI6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
- Vgs(th) (Max) @ Id: 1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 540mW (Ta)
- Rds On (Max) @ Id, Vgs: 105 mOhm @ 1A, 4V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: WSSMini6-F1
- Package / Case: 6-SMD, Flat Leads
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Package: 6-SMD, Flat Leads |
Stock120,000 |
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MOSFET (Metal Oxide) | 20V | 2.2A (Ta) | 1.8V, 4V | 1.3V @ 1mA | - | 280pF @ 10V | ±10V | - | 540mW (Ta) | 105 mOhm @ 1A, 4V | 150°C (TJ) | Surface Mount | WSSMini6-F1 | 6-SMD, Flat Leads |
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Panasonic Electronic Components |
MOSFET P-CH 12V 4A WSMINI6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 42 mOhm @ 1A, 4V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: WSMini6-F1-B
- Package / Case: 6-SMD, Flat Leads
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Package: 6-SMD, Flat Leads |
Stock4,943,616 |
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MOSFET (Metal Oxide) | 12V | 4A (Ta) | 1.8V, 4V | 1V @ 1mA | - | 1200pF @ 10V | ±8V | - | 700mW (Ta) | 42 mOhm @ 1A, 4V | 150°C (TJ) | Surface Mount | WSMini6-F1-B | 6-SMD, Flat Leads |
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Panasonic Electronic Components |
MOSFET P-CH 12V 1.2A MINI-5P
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V
- Vgs(th) (Max) @ Id: 1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±15V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 600mW (Ta)
- Rds On (Max) @ Id, Vgs: 450 mOhm @ 800mA, 4V
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Mini5-G1
- Package / Case: SC-74A, SOT-753
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Package: SC-74A, SOT-753 |
Stock231,156 |
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MOSFET (Metal Oxide) | 12V | 1.2A (Ta) | 4V | 1.3V @ 1mA | - | - | ±15V | Schottky Diode (Isolated) | 600mW (Ta) | 450 mOhm @ 800mA, 4V | 125°C (TJ) | Surface Mount | Mini5-G1 | SC-74A, SOT-753 |
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Panasonic Electronic Components |
MOSFET N-CH 60V 300MA SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 100mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,824,988 |
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MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 4.5V, 10V | 3V @ 250µA | 0.8nC @ 4.5V | 40pF @ 10V | ±20V | - | 350mW (Ta) | 3 Ohm @ 100mA, 10V | 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Panasonic Electronic Components |
MOSFET N-CH 30V 22A 8HSO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 3.35mA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3920pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 28W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 17A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSO
- Package / Case: 8-PowerSMD, Flat Leads
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Package: 8-PowerSMD, Flat Leads |
Stock25,146 |
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MOSFET (Metal Oxide) | 30V | 22A (Ta), 70A (Tc) | 4.5V, 10V | 3V @ 3.35mA | 22nC @ 4.5V | 3920pF @ 10V | ±20V | - | 2.8W (Ta), 28W (Tc) | 3.3 mOhm @ 17A, 10V | 150°C (TJ) | Surface Mount | 8-HSO | 8-PowerSMD, Flat Leads |
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Panasonic Electronic Components |
MOSFET N-CH 30V 12A 8HSSO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1.45mA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 19W (Tc)
- Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 8.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSSO
- Package / Case: 8-SMD, Flat Lead
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Package: 8-SMD, Flat Lead |
Stock24,264 |
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MOSFET (Metal Oxide) | 30V | 12A (Ta), 39A (Tc) | 4.5V, 10V | 3V @ 1.45mA | 10nC @ 4.5V | 1680pF @ 10V | ±20V | - | 2W (Ta), 19W (Tc) | 7.1 mOhm @ 8.5A, 10V | 150°C (TJ) | Surface Mount | 8-HSSO | 8-SMD, Flat Lead |
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Panasonic Electronic Components |
MOSFET N-CH 30V 12A 8HSO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1.01mA
- Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1092pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.7W (Ta), 19W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSO
- Package / Case: 8-PowerSMD, Flat Leads
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Package: 8-PowerSMD, Flat Leads |
Stock27,720 |
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MOSFET (Metal Oxide) | 30V | 12A (Ta), 19A (Tc) | 4.5V, 10V | 3V @ 1.01mA | 6.3nC @ 4.5V | 1092pF @ 10V | ±20V | - | 2.7W (Ta), 19W (Tc) | 10 mOhm @ 8A, 10V | 150°C (TJ) | Surface Mount | 8-HSO | 8-PowerSMD, Flat Leads |
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Panasonic Electronic Components |
MOSFET N CH 20V 4.5A SMINI3-G1-B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 1A, 4V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SMini3-G1-B
- Package / Case: SC-70, SOT-323
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Package: SC-70, SOT-323 |
Stock108,000 |
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MOSFET (Metal Oxide) | 20V | 4.5A (Ta) | 2.5V, 4.5V | 1.3V @ 1mA | - | 1200pF @ 10V | ±10V | - | 500mW (Ta) | 28 mOhm @ 1A, 4V | 150°C (TJ) | Surface Mount | SMini3-G1-B | SC-70, SOT-323 |
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Panasonic Electronic Components |
MOSFET N-CH 60V 100MA SMINI3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SMini3-F2-B
- Package / Case: SC-85
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Package: SC-85 |
Stock119,316 |
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MOSFET (Metal Oxide) | 60V | 100mA (Ta) | 2.5V, 4V | 1.5V @ 1µA | - | 12pF @ 3V | ±12V | - | 150mW (Ta) | 12 Ohm @ 10mA, 4V | 150°C (TJ) | Surface Mount | SMini3-F2-B | SC-85 |
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Panasonic Electronic Components |
MOSFET N-CH 30V 100MA SMINI3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SMini3-F2-B
- Package / Case: SC-85
|
Package: SC-85 |
Stock157,602 |
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MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 1.5V @ 1µA | - | 12pF @ 3V | ±12V | - | 150mW (Ta) | 3 Ohm @ 10mA, 4V | 150°C (TJ) | Surface Mount | SMini3-F2-B | SC-85 |
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Panasonic Electronic Components |
MOSFET N-CH 30V 100MA SSSMINI3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 100mW (Ta)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SSSMini3-F2-B
- Package / Case: SOT-723
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Package: SOT-723 |
Stock97,680 |
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MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 1.5V @ 1µA | - | 12pF @ 3V | ±12V | - | 100mW (Ta) | 3 Ohm @ 10mA, 4V | 150°C (TJ) | Surface Mount | SSSMini3-F2-B | SOT-723 |
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Panasonic Electronic Components |
MOSFET N-CH 60V 100MA SSSMINI3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 100mW (Ta)
- Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SSSMini3-F2-B
- Package / Case: SOT-723
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Package: SOT-723 |
Stock550,896 |
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MOSFET (Metal Oxide) | 60V | 100mA (Ta) | 2.5V, 4V | 1.5V @ 1µA | - | 12pF @ 3V | ±12V | - | 100mW (Ta) | 12 Ohm @ 10mA, 4V | 150°C (TJ) | Surface Mount | SSSMini3-F2-B | SOT-723 |
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Panasonic Electronic Components |
MOSFET P-CH 20V 3A
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 55 mOhm @ 1A, 4V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-3 (SOT323)
- Package / Case: SC-70, SOT-323
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Package: SC-70, SOT-323 |
Stock373,800 |
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MOSFET (Metal Oxide) | 20V | 3A (Ta) | 2.5V, 4.5V | 1.3V @ 1mA | - | 1000pF @ 10V | ±10V | - | 500mW (Ta) | 55 mOhm @ 1A, 4V | 150°C (TJ) | Surface Mount | SC-70-3 (SOT323) | SC-70, SOT-323 |
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Panasonic Electronic Components |
MOSFET P-CH 12V 2.2A XLGA004
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 74mOhm @ 1.5A, 4.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: XLGA004-W-0808-RA01
- Package / Case: 4-XFLGA, CSP
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 12 V | 2.2A (Ta) | 1.5V, 4.5V | 1V @ 1.2mA | 7 nC @ 4.5 V | 459 pF @ 10 V | ±8V | - | 360mW (Ta) | 74mOhm @ 1.5A, 4.5V | -40°C ~ 85°C (TA) | Surface Mount | XLGA004-W-0808-RA01 | 4-XFLGA, CSP |
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Panasonic Electronic Components |
MOSFET P-CH 12V 1.4A ALGA004
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 598µA
- Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 226 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 340mW (Ta)
- Rds On (Max) @ Id, Vgs: 153mOhm @ 700mA, 4.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: ALGA004-W-0606-RA01
- Package / Case: 4-XFLGA, CSP
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 12 V | 1.4A (Ta) | 1.5V, 4.5V | 1V @ 598µA | 3.3 nC @ 4.5 V | 226 pF @ 10 V | ±8V | - | 340mW (Ta) | 153mOhm @ 700mA, 4.5V | -40°C ~ 85°C (TA) | Surface Mount | ALGA004-W-0606-RA01 | 4-XFLGA, CSP |
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Panasonic Electronic Components |
MOSFET P-CH 12V 2.6A ULGA004
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 814 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 370mW (Ta)
- Rds On (Max) @ Id, Vgs: 51mOhm @ 2A, 4.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: ULGA004-W-1010-RA01
- Package / Case: 4-XFLGA, CSP
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 12 V | 2.6A (Ta) | 1.5V, 4.5V | 1V @ 2mA | 10.7 nC @ 4.5 V | 814 pF @ 10 V | ±8V | - | 370mW (Ta) | 51mOhm @ 2A, 4.5V | -40°C ~ 85°C (TA) | Surface Mount | ULGA004-W-1010-RA01 | 4-XFLGA, CSP |
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Panasonic Electronic Components |
MOSFET N-CH 12V 3.4A XLGA004
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 236µA
- Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 1.5A, 4.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: XLGA004-W-0808-RA01
- Package / Case: 4-XFLGA, CSP
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 12 V | 3.4A (Ta) | 1.5V, 4.5V | 1V @ 236µA | 5.8 nC @ 4.5 V | 275 pF @ 10 V | ±8V | - | 360mW (Ta) | 30mOhm @ 1.5A, 4.5V | -40°C ~ 85°C (TA) | Surface Mount | XLGA004-W-0808-RA01 | 4-XFLGA, CSP |
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Panasonic Electronic Components |
MOSFET N-CH 12V 2.3A ALGA004
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 118µA
- Gate Charge (Qg) (Max) @ Vgs: 2.55 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 340mW (Ta)
- Rds On (Max) @ Id, Vgs: 64mOhm @ 1.5A, 4.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: ALGA004-W-0606-RA01
- Package / Case: 4-XFLGA, CSP
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 12 V | 2.3A (Ta) | 1.5V, 4.5V | 1V @ 118µA | 2.55 nC @ 4.5 V | 274 pF @ 10 V | ±8V | - | 340mW (Ta) | 64mOhm @ 1.5A, 4.5V | -40°C ~ 85°C (TA) | Surface Mount | ALGA004-W-0606-RA01 | 4-XFLGA, CSP |
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Panasonic Electronic Components |
MOSFET N-CH 12V 3.9A ULGA004
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 394µA
- Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 370mW (Ta)
- Rds On (Max) @ Id, Vgs: 24mOhm @ 1.5A, 4.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: ULGA004-W-1010-RA01
- Package / Case: 4-XFLGA, CSP
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 12 V | 3.9A (Ta) | 1.5V, 4.5V | 1V @ 394µA | 7 nC @ 4.5 V | 490 pF @ 10 V | ±8V | - | 370mW (Ta) | 24mOhm @ 1.5A, 4.5V | -40°C ~ 85°C (TA) | Surface Mount | ULGA004-W-1010-RA01 | 4-XFLGA, CSP |
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