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Rohm Semiconductor |
DIODE SIL CARB 650V 8A TO220FM
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 40 µA @ 650 V
- Capacitance @ Vr, F: 400pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220FM
- Operating Temperature - Junction: 175°C (Max)
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Package: - |
Stock3 |
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650 V | 8A | 1.5 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 400pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220FM | 175°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY SMD
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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Rohm Semiconductor |
150V 3A, TO-277GE, ULTRA LOW IR
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A
- Operating Temperature - Junction: 175°C
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Package: - |
Stock11,985 |
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150 V | 3A | 830 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2.1 µA @ 150 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A | 175°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 30V 200MA UMD2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 nA @ 10 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: UMD2
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock22,950 |
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30 V | 200mA | 450 mV @ 10 mA | Small Signal =< 200mA (Io), Any Speed | - | 500 nA @ 10 V | - | Surface Mount | SC-90, SOD-323F | UMD2 | 150°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 200V 2A PMDTM
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 870 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: PMDTM
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock4,044 |
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200 V | 2A | 870 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 10 µA @ 200 V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 30V 1A PMDTM
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 30 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: PMDTM
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock8,595 |
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30 V | 1A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 30 V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 600V 5A TO252
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock5,055 |
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600 V | 5A | 1.3 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 10 µA @ 600 V | - | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 | 150°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 40V 100MA UMD2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 410 mV @ 10 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: UMD2
- Operating Temperature - Junction: 125°C (Max)
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Package: - |
Stock6 |
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40 V | 100mA | 410 mV @ 10 mA | Small Signal =< 200mA (Io), Any Speed | - | 25 µA @ 40 V | - | Surface Mount | SC-90, SOD-323F | UMD2 | 125°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 430V 20A TO220NFM
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 430 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 430 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220NFM
- Operating Temperature - Junction: 150°C
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Package: - |
Stock2,973 |
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430 V | 20A | 1.7 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 10 µA @ 430 V | - | Through Hole | TO-220-2 Full Pack | TO-220NFM | 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 40V 2A PMDTM
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: PMDTM
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock8,715 |
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40 V | 2A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 600V 10A LPDS
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: 157pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: LPDS
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock8,442 |
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600 V | 10A | 2.8 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 10 µA @ 600 V | 157pF @ 0V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | LPDS | 150°C (Max) |
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Rohm Semiconductor |
TRENCH MOS STRUCTURE, 100V, 20A,
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 860 mV @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 80 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263L
- Operating Temperature - Junction: 150°C
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Package: - |
Stock3,000 |
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100 V | 20A | 860 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 80 µA @ 100 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263L | 150°C |
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Rohm Semiconductor |
DIODE GP 600V 30A TO220ACFP
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220ACFP
- Operating Temperature - Junction: 150°C
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Package: - |
Stock2,487 |
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600 V | 30A | 2.8 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 10 µA @ 600 V | - | Through Hole | TO-220-2 | TO-220ACFP | 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY SMD
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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Rohm Semiconductor |
DIODE SIL CARB 650V 6A TO220FM
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 30 µA @ 650 V
- Capacitance @ Vr, F: 300pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220FM
- Operating Temperature - Junction: 175°C (Max)
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Package: - |
Stock1,602 |
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650 V | 6A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 300pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220FM | 175°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 200V 200MA PMDU
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: PMDU
- Operating Temperature - Junction: 150°C
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Package: - |
Stock26,775 |
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200 V | 200mA | 750 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 35 ns | 1 µA @ 200 V | - | Surface Mount | SOD-123F | PMDU | 150°C |
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Rohm Semiconductor |
200V 5A, TO-252, ULTRA LOW IR SB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 nA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- Operating Temperature - Junction: 175°C
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Package: - |
Stock7,440 |
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200 V | 5A | 920 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 nA @ 200 V | - | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 | 175°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 30V 100MA 0201
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock118,500 |
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Rohm Semiconductor |
DIODE SCHOTTKY 100V 1A TUMD2M
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300 nA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: TUMD2M
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock137,022 |
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100 V | 1A | 840 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300 nA @ 100 V | - | Surface Mount | 2-SMD, Flat Lead | TUMD2M | 150°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 30V 3A PMDTM
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2.5 µA @ 30 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: PMDTM
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock66 |
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30 V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 2.5 µA @ 30 V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 60V 2A PMDU
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 765 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1.5 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: PMDU
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock193,737 |
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60 V | 2A | 765 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5 µA @ 60 V | - | Surface Mount | SOD-123F | PMDU | 150°C (Max) |
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Rohm Semiconductor |
100V 5A, TO-277GE, ULTRA LOW IR
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A
- Operating Temperature - Junction: 175°C
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Package: - |
Stock12,000 |
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100 V | 5A | 840 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.3 µA @ 100 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A | 175°C |
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Rohm Semiconductor |
DIODE GEN PURP 600V 5A TO220NFM
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220NFM
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock2,586 |
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600 V | 5A | 1.55 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 600 V | - | Through Hole | TO-220-2 Full Pack | TO-220NFM | 150°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 30V 2A PMDU
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 800 nA @ 30 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: PMDU
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock4,638 |
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30 V | 2A | 700 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800 nA @ 30 V | - | Surface Mount | SOD-123F | PMDU | 150°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 30V 5A PMDTM
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150 µA @ 30 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: PMDTM
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock25,620 |
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30 V | 5A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 30 V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
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Rohm Semiconductor |
100V 3A, TO-277GE, ULTRA LOW IR
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 810 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A
- Operating Temperature - Junction: 175°C
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Package: - |
Stock12,000 |
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100 V | 3A | 810 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.3 µA @ 100 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A | 175°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 30V 1A PMDE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 30 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: PMDE
- Operating Temperature - Junction: 150°C
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Package: - |
Stock11,121 |
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30 V | 1A | 480 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 30 V | - | Surface Mount | 2-SMD, Flat Lead | PMDE | 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 40V 100MA UMD3F
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 40 V
- Capacitance @ Vr, F: 6pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-85
- Supplier Device Package: UMD3F
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock8,277 |
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40 V | 100mA | 550 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 10 µA @ 40 V | 6pF @ 10V, 1MHz | Surface Mount | SC-85 | UMD3F | 150°C (Max) |