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Rohm Semiconductor |
DIODE SCHOTTKY 30V 1A PMDU
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 390 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 µA @ 30 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: PMDU
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock73,917 |
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30 V | 1A | 390 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 30 V | - | Surface Mount | SOD-123F | PMDU | 150°C (Max) |
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Rohm Semiconductor |
TRENCH MOS STRUCTURE, 100V, 1A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 6 µA @ 100 V
- Capacitance @ Vr, F: 25pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: PMDE
- Operating Temperature - Junction: 175°C
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Package: - |
Stock9,000 |
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100 V | 1A | 700 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 6 µA @ 100 V | 25pF @ 4V, 1MHz | Surface Mount | 2-SMD, Flat Lead | PMDE | 175°C |
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Rohm Semiconductor |
150V 8A, TO-277GE, ULTRA LOW IR
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3.7 µA @ 150 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A
- Operating Temperature - Junction: 175°C
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Package: - |
Stock11,877 |
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150 V | 8A | 880 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3.7 µA @ 150 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A | 175°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 30V 200MA UMD2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 580 mV @ 200 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 µA @ 10 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: UMD2
- Operating Temperature - Junction: 150°C
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Package: - |
Stock17,370 |
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30 V | 200mA | 580 mV @ 200 mA | Small Signal =< 200mA (Io), Any Speed | - | 1 µA @ 10 V | - | Surface Mount | SC-90, SOD-323F | UMD2 | 150°C |
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Rohm Semiconductor |
TRENCH MOS STRUCTURE, 100V, 3A,
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30 µA @ 100 V
- Capacitance @ Vr, F: 140pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: PMDTM
- Operating Temperature - Junction: 175°C
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Package: - |
Request a Quote |
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100 V | 3A | 640 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 30 µA @ 100 V | 140pF @ 4V, 1MHz | Surface Mount | SOD-128 | PMDTM | 175°C |
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Rohm Semiconductor |
TRENCH MOS STRUCTURE, 100V, 5A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 610 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 100 V
- Capacitance @ Vr, F: 200pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: PMDTM
- Operating Temperature - Junction: 175°C
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Package: - |
Stock8,919 |
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100 V | 5A | 610 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 100 V | 200pF @ 4V, 1MHz | Surface Mount | SOD-128 | PMDTM | 175°C |
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Rohm Semiconductor |
TRENCH MOS STRUCTURE, 100V, 5A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25 µA @ 100 V
- Capacitance @ Vr, F: 95pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: PMDTM
- Operating Temperature - Junction: 175°C
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Package: - |
Stock9,000 |
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100 V | 5A | 770 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 25 µA @ 100 V | 95pF @ 4V, 1MHz | Surface Mount | SOD-128 | PMDTM | 175°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 40V 100MA UMD2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 480 mV @ 10 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: UMD2
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Request a Quote |
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40 V | 100mA | 480 mV @ 10 mA | Small Signal =< 200mA (Io), Any Speed | - | 2 µA @ 40 V | - | Surface Mount | SC-90, SOD-323F | UMD2 | 150°C (Max) |
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Rohm Semiconductor |
TRENCH MOS STRUCTURE, 100V, 5A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30 µA @ 100 V
- Capacitance @ Vr, F: 140pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: PMDTM
- Operating Temperature - Junction: 175°C
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Package: - |
Stock9,000 |
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100 V | 5A | 730 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 30 µA @ 100 V | 140pF @ 4V, 1MHz | Surface Mount | SOD-128 | PMDTM | 175°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 30V 200MA EMD2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 580 mV @ 200 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 µA @ 10 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: EMD2
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock5,193 |
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30 V | 200mA | 580 mV @ 200 mA | Small Signal =< 200mA (Io), Any Speed | - | 1 µA @ 10 V | - | Surface Mount | SC-79, SOD-523 | EMD2 | 150°C (Max) |
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Rohm Semiconductor |
DIODE GENERAL PURPOSE SMD
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Rohm Semiconductor |
100V, 10A, TO-277GE, LOW IR SBD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 250 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A
- Operating Temperature - Junction: 150°C
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Package: - |
Request a Quote |
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100 V | 10A | 700 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250 µA @ 100 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A | 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 30V 1A PMDU
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 30 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: PMDU
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock17,130 |
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30 V | 1A | 480 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 30 V | - | Surface Mount | SOD-123F | PMDU | 150°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 40V 200MA UMD2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 90 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: UMD2
- Operating Temperature - Junction: 125°C (Max)
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Package: - |
Stock31,503 |
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40 V | 200mA | 540 mV @ 200 mA | Small Signal =< 200mA (Io), Any Speed | - | 90 µA @ 40 V | - | Surface Mount | SC-90, SOD-323F | UMD2 | 125°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 150V 2A PMDS
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 810 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3 µA @ 150 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: PMDS
- Operating Temperature - Junction: 150°C
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Package: - |
Stock5,316 |
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150 V | 2A | 810 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3 µA @ 150 V | - | Surface Mount | DO-214AC, SMA | PMDS | 150°C |
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Rohm Semiconductor |
TRENCH MOS STRUCTURE, 100V, 8A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 670 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 60 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A
- Operating Temperature - Junction: 175°C
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Package: - |
Stock11,910 |
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100 V | 8A | 670 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60 µA @ 100 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A | 175°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 40V 5A TO277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 530 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 120 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A
- Operating Temperature - Junction: 150°C
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Package: - |
Stock10,815 |
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40 V | 5A | 530 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120 µA @ 40 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A | 150°C |
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Rohm Semiconductor |
DIODE SIL CARB 650V 20A TO263AB
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 400 µA @ 600 V
- Capacitance @ Vr, F: 730pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
- Operating Temperature - Junction: 175°C (Max)
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Package: - |
Stock8,115 |
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650 V | 20A | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 600 V | 730pF @ 1V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263AB | 175°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 40V 200MA UMD2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 430 mV @ 200 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: UMD2
- Operating Temperature - Junction: 125°C
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Package: - |
Stock4,860 |
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40 V | 200mA | 430 mV @ 200 mA | Small Signal =< 200mA (Io), Any Speed | - | 300 µA @ 40 V | - | Surface Mount | SC-90, SOD-323F | UMD2 | 125°C |
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Rohm Semiconductor |
100V 8A, TO-277GE, ULTRA LOW IR
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 840 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3.4 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A
- Operating Temperature - Junction: 175°C
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Package: - |
Stock11,910 |
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100 V | 8A | 840 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3.4 µA @ 100 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A | 175°C |
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Rohm Semiconductor |
DIODE SIL CARB 650V 4A TO220ACP
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 20 µA @ 650 V
- Capacitance @ Vr, F: 200pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220ACP
- Operating Temperature - Junction: 175°C (Max)
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Package: - |
Stock2,115 |
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650 V | 4A | 1.5 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 200pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220ACP | 175°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY SMD
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Rohm Semiconductor |
DIODE SCHOTTKY 40V 3A PMDU
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Rohm Semiconductor |
DIODE SCHOTTKY 60V 3A PMDTM
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35.3 ns
- Current - Reverse Leakage @ Vr: 4 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: PMDTM
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock44,532 |
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60 V | 3A | 640 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 35.3 ns | 4 µA @ 60 V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 40V 3A PMDTM
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 80 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: PMDTM
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock222 |
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40 V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 80 µA @ 40 V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 40V 10A TO277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 540 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A
- Operating Temperature - Junction: 150°C
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Package: - |
Stock11,664 |
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40 V | 10A | 540 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300 µA @ 40 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A | 150°C |
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Rohm Semiconductor |
DIODE SIC 1.2KV 5A TO220ACFP
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
- Capacitance @ Vr, F: 270pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220ACFP
- Operating Temperature - Junction: 175°C
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Package: - |
Stock2,268 |
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1200 V | 5A | 1.6 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 270pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220ACFP | 175°C |
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Rohm Semiconductor |
150V 3A, TO-277GE, ULTRA LOW IR
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A
- Operating Temperature - Junction: 175°C
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Package: - |
Stock12,000 |
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150 V | 3A | 830 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2.1 µA @ 150 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A | 175°C |
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