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Rohm Semiconductor |
MOSFET 2N-CH 30V 6A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
- Power - Max: 1.4W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock7,170 |
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- | 30V | 6A (Ta) | 30mOhm @ 6A, 10V | 2.5V @ 1mA | 10.1nC @ 5V | 520pF @ 10V | 1.4W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
40V 16.5A, DUAL NCH+PCH, HSOP8,
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 16.5A (Tc), 7A (Ta), 18A (Tc)
- Rds On (Max) @ Id, Vgs: 46mOhm @ 6A, 10V, 44mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V
- Power - Max: 3W (Ta), 20W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-HSOP
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Package: - |
Stock7,500 |
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- | 40V | 6A (Ta), 16.5A (Tc), 7A (Ta), 18A (Tc) | 46mOhm @ 6A, 10V, 44mOhm @ 7A, 10V | 2.5V @ 1mA | 3.5nC @ 10V, 17.2nC @ 10V | 150pF @ 20V, 920pF @ 20V | 3W (Ta), 20W (Tc) | 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-HSOP |
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Rohm Semiconductor |
MOSFET 2P-CH 40V 5A TSMT8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V
- Power - Max: 1.1W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: TSMT8
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Package: - |
Stock7,404 |
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- | 40V | 5A (Ta) | 41mOhm @ 5A, 10V | 2.5V @ 1mA | 17.2nC @ 10V | 920pF @ 20V | 1.1W (Ta) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TSMT8 |
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Rohm Semiconductor |
MOSFET 2N-CH 30V 10A/11A HSML
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 11A (Ta)
- Rds On (Max) @ Id, Vgs: 14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, 7.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 348pF @ 15V, 429pF @ 15V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-UDFN Exposed Pad
- Supplier Device Package: HSML3030L10
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Package: - |
Stock31,440 |
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- | 30V | 10A (Ta), 11A (Ta) | 14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V | 2.5V @ 1mA | 6nC @ 10V, 7.4nC @ 10V | 348pF @ 15V, 429pF @ 15V | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-UDFN Exposed Pad | HSML3030L10 |
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Rohm Semiconductor |
MOSFET 60V 3.5A/2.5A HUML2020L8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.5A (Ta)
- Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V, 280mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-PowerUDFN
- Supplier Device Package: HUML2020L8
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Package: - |
Stock14,970 |
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- | 60V | 3.5A (Ta), 2.5A (Ta) | 95mOhm @ 3.5A, 10V, 280mOhm @ 2.5A, 10V | 2.5V @ 1mA | - | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 6-PowerUDFN | HUML2020L8 |
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Rohm Semiconductor |
MOSFET N/P-CH 30V 5A/3.5A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Ta)
- Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 5.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 490pF @ 10V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock7,458 |
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- | 30V | 5A (Ta), 3.5A (Ta) | 51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V | 2.5V @ 1mA | 3.9nC @ 5V, 5.5nC @ 5V | 230pF @ 10V, 490pF @ 10V | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET 2N-CH 60V 4.5A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Request a Quote |
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- | 60V | 4.5A (Ta) | 65mOhm @ 4.5A, 10V | 2.5V @ 1mA | 10nC @ 5V | 500pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET N/P-CH 30V 5A/3.5A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Ta)
- Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 5.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 490pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Request a Quote |
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- | 30V | 5A (Ta), 3.5A (Ta) | 51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V | 2.5V @ 1mA | 3.9nC @ 5V, 5.5nC @ 5V | 230pF @ 10V, 490pF @ 10V | 2W | 150°C | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET N/P-CH 30V 5A/4.5A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4.5A (Ta)
- Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 8.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 850pF @ 10V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock6,975 |
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- | 30V | 5A (Ta), 4.5A (Ta) | 51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V | 2.5V @ 1mA | 3.9nC @ 5V, 8.5nC @ 5V | 230pF @ 10V, 850pF @ 10V | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET 2N-CH 100V 6A/17A 8HSOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 17A (Tc)
- Rds On (Max) @ Id, Vgs: 54mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V
- Power - Max: 3W (Ta), 21W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-HSOP
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Package: - |
Stock7,374 |
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- | 100V | 6A (Ta), 17A (Tc) | 54mOhm @ 6A, 10V | 2.5V @ 1mA | 6.7nC @ 10V | 305pF @ 50V | 3W (Ta), 21W (Tc) | 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-HSOP |
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Rohm Semiconductor |
MOSFET 2P-CH 20V EMT6
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Rohm Semiconductor |
MOSFET 2N-CH 30V 7A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate, 4V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Request a Quote |
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Logic Level Gate, 4V Drive | 30V | 7A (Ta) | 24mOhm @ 7A, 10V | 2.5V @ 1mA | 11.8nC @ 5V | 600pF @ 10V | 2W (Ta) | 150°C | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET 2N-CH 100V 10A/24A 8HSOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 24A (Tc)
- Rds On (Max) @ Id, Vgs: 19.6mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 50V
- Power - Max: 3W (Ta), 26W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-HSOP
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Package: - |
Stock7,425 |
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- | 100V | 10A (Ta), 24A (Tc) | 19.6mOhm @ 10A, 10V | 2.5V @ 1mA | 19.8nC @ 10V | 1100pF @ 50V | 3W (Ta), 26W (Tc) | 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-HSOP |
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Rohm Semiconductor |
MOSFET 2P-CH 12V 2A TUMT6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 6V
- Power - Max: 910mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: TUMT6
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Package: - |
Stock8,700 |
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- | 12V | 2A (Ta) | 105mOhm @ 2A, 4.5V | 1V @ 1mA | 7.6nC @ 4.5V | 850pF @ 6V | 910mW (Ta) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | TUMT6 |
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Rohm Semiconductor |
MOSFET 2N-CH 60V 0.25A UMT6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
- Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
- Power - Max: 150mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: UMT6
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Package: - |
Stock7,290 |
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- | 60V | 250mA (Ta) | 2.4Ohm @ 250mA, 10V | 2.3V @ 1mA | - | 15pF @ 25V | 150mW | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | UMT6 |
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Rohm Semiconductor |
MOSFET 2P-CH 60V 2.5A HUML2020L8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Rds On (Max) @ Id, Vgs: 280mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 30V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-PowerUDFN
- Supplier Device Package: HUML2020L8
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Package: - |
Stock7,023 |
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- | 60V | 2.5A (Ta) | 280mOhm @ 2.5A, 10V | 2.5V @ 1mA | 6.3nC @ 10V | 265pF @ 30V | 2W (Ta) | 150°C (TJ) | Surface Mount | 6-PowerUDFN | HUML2020L8 |
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Rohm Semiconductor |
MOSFET N/P-CH 30V 4A HUML2020L8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V, 6.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 305pF @ 15V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-PowerUDFN
- Supplier Device Package: HUML2020L8
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Package: - |
Stock98,130 |
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- | 30V | 4A (Ta) | 46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V | 2.5V @ 1mA | 4.3nC @ 10V, 6.7nC @ 10V | 180pF @ 15V, 305pF @ 15V | 2W (Ta) | 150°C (TJ) | Surface Mount | 6-PowerUDFN | HUML2020L8 |
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Rohm Semiconductor |
MOSFET 2N-CH 30V 5.5A HUML2020L8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
- Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerUDFN
- Supplier Device Package: HUML2020L8
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Package: - |
Stock8,985 |
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- | 30V | 5.5A (Ta) | 42mOhm @ 5A, 4.5V | 1.5V @ 1mA | 4nC @ 4.5V | 450pF @ 15V | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-PowerUDFN | HUML2020L8 |
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Rohm Semiconductor |
MOSFET 2N-CH 60V 3A TSMT8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
- Power - Max: 1.1W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: TSMT8
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Package: - |
Stock3,471 |
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- | 60V | 3A (Ta) | 90mOhm @ 3A, 10V | 2.5V @ 1mA | 3.1nC @ 10V | 135pF @ 30V | 1.1W (Ta) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TSMT8 |
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Rohm Semiconductor |
MOSFET 2N-CH 45V 6A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 45V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock7,167 |
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- | 45V | 6A (Ta) | 25mOhm @ 6A, 10V | 2.5V @ 1mA | 21.6nC @ 5V | 1400pF @ 10V | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET 2N-CH 30V 1A TSMT6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Rds On (Max) @ Id, Vgs: 238mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 10V
- Power - Max: 900mW (Tc)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSMT6 (SC-95)
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Package: - |
Stock42,042 |
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Logic Level Gate, 2.5V Drive | 30V | 1A (Ta) | 238mOhm @ 1A, 4.5V | 1.5V @ 1mA | 2.4nC @ 4.5V | 77pF @ 10V | 900mW (Tc) | 150°C | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSMT6 (SC-95) |
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Rohm Semiconductor |
SIC 2N-CH 1200V 300A MODULE
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 5.6V @ 91mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 10V
- Power - Max: 1260W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: - |
Stock18 |
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- | 1200V (1.2kV) | 300A (Tc) | - | 5.6V @ 91mA | - | 14000pF @ 10V | 1260W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | Module | Module |
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Rohm Semiconductor |
MOSFET 2N-CH 60V 5.5A TSMT8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
- Power - Max: 1.1W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: TSMT8
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Package: - |
Stock9,876 |
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- | 60V | 5.5A (Ta) | 30mOhm @ 5.5A, 10V | 2.5V @ 1mA | 7.6nC @ 10V | 460pF @ 30V | 1.1W (Ta) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TSMT8 |
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Rohm Semiconductor |
MOSFET 2N-CH 45V 6A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 45V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock3 |
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- | 45V | 6A (Ta) | 25mOhm @ 6A, 10V | 2.5V @ 1mA | 21.6nC @ 5V | 1400pF @ 10V | 2W | 150°C | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET N-CH SOP8G
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Rohm Semiconductor |
60V 23A, DUAL NCH+NCH, HSOP8, PO
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 23A (Tc)
- Rds On (Max) @ Id, Vgs: 27mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
- Power - Max: 3W (Ta), 21W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-HSOP
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Package: - |
Stock7,500 |
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- | 60V | 8.5A (Ta), 23A (Tc) | 27mOhm @ 8.5A, 10V | 2.5V @ 1mA | 7.6nC @ 10V | 460pF @ 30V | 3W (Ta), 21W (Tc) | 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-HSOP |
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Rohm Semiconductor |
MOSFET 2P-CH 20V 5A HUML2020L8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-PowerUDFN
- Supplier Device Package: HUML2020L8
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Package: - |
Stock8,475 |
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- | 20V | 5A (Ta) | 59mOhm @ 5A, 4.5V | 1.5V @ 1mA | 6.5nC @ 4.5V | 460pF @ 10V | 2W (Ta) | 150°C (TJ) | Surface Mount | 6-PowerUDFN | HUML2020L8 |
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Rohm Semiconductor |
MOSFET 2P-CH 9A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Request a Quote |
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- | - | 9A (Ta) | 18.5mOhm @ 9A, 10V | 2.5V @ 1mA | - | - | - | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |