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Rohm Semiconductor |
MOSFET 2N-CH 40V 6.5A TSMT8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
- Rds On (Max) @ Id, Vgs: 46mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 20V
- Power - Max: 1.1W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: TSMT8
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Package: - |
Stock54,453 |
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- | 40V | 6.5A (Ta) | 46mOhm @ 6.5A, 10V | 2.5V @ 10µA | 2.6nC @ 10V | 195pF @ 20V | 1.1W (Ta) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TSMT8 |
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Rohm Semiconductor |
MOSFET 2N-CH 60V 8SOP
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Rohm Semiconductor |
SIC 2N-CH 1200V 291A MODULE
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 291A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 4.8V @ 145.6mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 30000pF @ 10V
- Power - Max: 925W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: - |
Stock24 |
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- | 1200V (1.2kV) | 291A (Tc) | - | 4.8V @ 145.6mA | - | 30000pF @ 10V | 925W (Tc) | 175°C (TJ) | Chassis Mount | Module | Module |
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Rohm Semiconductor |
MOSFET 2N-CH 40V 6A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock7,134 |
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- | 40V | 6A (Ta) | 38mOhm @ 6A, 10V | 2.5V @ 1mA | 2.9nC @ 5V | 280pF @ 10V | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET 2N-CH 100V 3A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
- Power - Max: 1.4W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock29,685 |
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- | 100V | 3A (Ta) | 170mOhm @ 3A, 10V | 2.5V @ 1mA | 8.5nC @ 5V | 610pF @ 25V | 1.4W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET 2N-CH 60V 4.5A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate, 4V Drive
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Request a Quote |
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Logic Level Gate, 4V Drive | 60V | 4.5A (Ta) | 65mOhm @ 4.5A, 10V | 2.5V @ 1mA | 10nC @ 5V | 500pF @ 10V | 2W (Ta) | 150°C | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET 2N-CH 60V 3A HUML2020L8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Rds On (Max) @ Id, Vgs: 153mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 30V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-PowerUDFN
- Supplier Device Package: HUML2020L8
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Package: - |
Stock9,969 |
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- | 60V | 3A (Ta) | 153mOhm @ 3A, 10V | 2.7V @ 50µA | 2.1nC @ 10V | 110pF @ 30V | 2W (Ta) | 150°C (TJ) | Surface Mount | 6-PowerUDFN | HUML2020L8 |
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Rohm Semiconductor |
MOSFET 2P-CH 100V 4.5A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Rds On (Max) @ Id, Vgs: 91mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 50V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock9,000 |
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- | 100V | 4.5A (Ta) | 91mOhm @ 4.5A, 10V | 2.5V @ 1mA | 52nC @ 10V | 2100pF @ 50V | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET 2N-CH 100V 2A HUML2020L8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-PowerUDFN
- Supplier Device Package: HUML2020L8
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Package: - |
Stock9,000 |
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- | 100V | 2A (Ta) | 207mOhm @ 2A, 10V | 2.5V @ 1mA | 2.8nC @ 10V | 90pF @ 50V | 2W (Ta) | 150°C (TJ) | Surface Mount | 6-PowerUDFN | HUML2020L8 |
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Rohm Semiconductor |
MOSFET N/P-CH 80V 3.4A/2.6A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta)
- Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock6,426 |
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- | 80V | 3.4A (Ta), 2.6A (Ta) | 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V | 2.5V @ 1mA | 9.2nC @ 5V, 11.5nC @ 5V | 600pF @ 10V, 1000pF @ 10V | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET N/P-CH 60V 4.5A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V, 70mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V, 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V, 2500pF @ 10V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock7,398 |
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- | 60V | 4.5A (Ta) | 65mOhm @ 4.5A, 10V, 70mOhm @ 4.5A, 10V | 3V @ 1mA | 7nC @ 5V, 40nC @ 10V | 500pF @ 10V, 2500pF @ 10V | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET 2N-CH 30V 15A/27A 8HSOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 27A (Tc), 26A (Ta), 80A (Tc)
- Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V, 3mOhm @ 26A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 2410pF @ 15V
- Power - Max: 3W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-HSOP
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Package: - |
Stock28,368 |
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- | 30V | 15A (Ta), 27A (Tc), 26A (Ta), 80A (Tc) | 8.8mOhm @ 15A, 10V, 3mOhm @ 26A, 10V | 2.5V @ 1mA | 10nC @ 10V, 36nC @ 10V | 590pF @ 15V, 2410pF @ 15V | 3W (Ta) | 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-HSOP |
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Rohm Semiconductor |
MOSFET 2P-CH 40V 3.5A HUML2020L8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Rds On (Max) @ Id, Vgs: 122mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 20V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-PowerUDFN
- Supplier Device Package: HUML2020L8
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Package: - |
Stock7,044 |
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- | 40V | 3.5A (Ta) | 122mOhm @ 3.5A, 10V | 2.5V @ 1mA | 6.2nC @ 10V | 265pF @ 20V | 2W (Ta) | 150°C (TJ) | Surface Mount | 6-PowerUDFN | HUML2020L8 |
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Rohm Semiconductor |
MOSFET 2N-CH 60V 5A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock6,885 |
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- | 60V | 5A (Ta) | 48mOhm @ 5A, 10V | 2.5V @ 1mA | 12nC @ 5V | 620pF @ 10V | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET 2N-CH 60V 5A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock7,500 |
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- | 60V | 5A (Ta) | 48mOhm @ 5A, 10V | 2.5V @ 1mA | 12nC @ 5V | 620pF @ 10V | 2W | 150°C | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET 2N-CH 30V 7A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
- Power - Max: 1.4W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock3,153 |
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- | 30V | 7A (Ta) | 24mOhm @ 7A, 10V | 2.5V @ 1mA | 11.8nC @ 5V | 600pF @ 10V | 1.4W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET 2N-CH 40V 4.5A TSMT8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
- Power - Max: 1.1W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: TSMT8
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Package: - |
Stock2,898 |
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- | 40V | 4.5A (Ta) | 44mOhm @ 4.5A, 10V | 2.5V @ 1mA | 3.5nC @ 10V | 150pF @ 20V | 1.1W (Ta) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TSMT8 |
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Rohm Semiconductor |
MOSFET N/P-CH 30V 9A/7A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 7A (Ta)
- Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, 25nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, 2600pF @ 10V
- Power - Max: 1.4W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock5,937 |
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- | 30V | 9A (Ta), 7A (Ta) | 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V | 2.5V @ 1mA | 15nC @ 5V, 25nC @ 5V | 1190pF @ 10V, 2600pF @ 10V | 1.4W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET N/P-CH 30V 9A/7A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 7A (Ta)
- Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, 25nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, 2600pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Request a Quote |
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- | 30V | 9A (Ta), 7A (Ta) | 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V | 2.5V @ 1mA | 15nC @ 5V, 25nC @ 5V | 1190pF @ 10V, 2600pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET 2N-CH 40V 8A TSMT8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
- Power - Max: 1.1W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: TSMT8
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Package: - |
Stock17,850 |
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- | 40V | 8A (Ta) | 17.7mOhm @ 8A, 10V | 2.5V @ 1mA | 10.6nC @ 10V | 530pF @ 20V | 1.1W (Ta) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TSMT8 |
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Rohm Semiconductor |
MOSFET N/P-CH 60V 6.5A/7A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 7A (Ta)
- Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 10V, 33mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V, 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V, 2630pF @ 30V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock6,063 |
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- | 60V | 6.5A (Ta), 7A (Ta) | 32mOhm @ 6.5A, 10V, 33mOhm @ 7A, 10V | 2.5V @ 1mA | 7.6nC @ 10V, 50nC @ 10V | 460pF @ 30V, 2630pF @ 30V | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
SIC 2N-CH 1200V 400A MODULE
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 5.6V @ 109.2mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 17000pF @ 10V
- Power - Max: 1570W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: - |
Stock6 |
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- | 1200V (1.2kV) | 400A (Tc) | - | 5.6V @ 109.2mA | - | 17000pF @ 10V | 1570W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | Module | Module |
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Rohm Semiconductor |
40V 24A, DUAL NCH+NCH, HSOP8, PO
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 24A (Tc)
- Rds On (Max) @ Id, Vgs: 15.7mOhm @ 10.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
- Power - Max: 3W (Ta), 21W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-HSOP
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Package: - |
Stock7,500 |
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- | 40V | 10.5A (Ta), 24A (Tc) | 15.7mOhm @ 10.5A, 10V | 2.5V @ 1mA | 10.6nC @ 10V | 530pF @ 20V | 3W (Ta), 21W (Tc) | 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-HSOP |
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Rohm Semiconductor |
40V 24A, DUAL NCH+NCH, HSOP8, PO
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 24A (Tc)
- Rds On (Max) @ Id, Vgs: 8mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 20V
- Power - Max: 3W (Ta), 26W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-HSOP
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Package: - |
Stock7,500 |
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- | 40V | 16A (Ta), 24A (Tc) | 8mOhm @ 16A, 10V | 2.5V @ 1mA | 27nC @ 10V | 1570pF @ 20V | 3W (Ta), 26W (Tc) | 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-HSOP |
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Rohm Semiconductor |
MOSFET 2P-CH 60V 7.5A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
- Rds On (Max) @ Id, Vgs: 32mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 30V
- Power - Max: 1.4W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock20,205 |
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- | 60V | 7.5A (Ta) | 32mOhm @ 7.5A, 10V | 2.5V @ 1mA | 50nC @ 10V | 2630pF @ 30V | 1.4W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET 2N-CH 60V 3.5A 8DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerUDFN
- Supplier Device Package: DFN2020-8D
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Package: - |
Stock3,987 |
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- | 60V | 3.5A (Ta) | 95mOhm @ 3.5A, 10V | 2.5V @ 1mA | 3.1nC @ 10V | 135pF @ 30V | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-PowerUDFN | DFN2020-8D |
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Rohm Semiconductor |
MOSFET 2P-CH 7A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate, 4V Drive
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Request a Quote |
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Logic Level Gate, 4V Drive | - | 7A (Ta) | 28mOhm @ 7A, 10V | 2.5V @ 1mA | - | - | - | 150°C | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET 2N-CH 500V 0.5A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Rds On (Max) @ Id, Vgs: 11.7Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 23.5pF @ 25V
- Power - Max: 2W (Ta)
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock7,986 |
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- | 500V | 500mA (Ta) | 11.7Ohm @ 250mA, 10V | 5V @ 1mA | 3.8nC @ 10V | 23.5pF @ 25V | 2W (Ta) | - | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |