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Rohm Semiconductor |
MOSFET 2N-CH 20V 2.5A TSST8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate, 1.5V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.5A
- Rds On (Max) @ Id, Vgs: 72 mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
- Power - Max: 1W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 8-TSST
|
Package: 8-SMD, Flat Lead |
Stock25,026 |
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Logic Level Gate, 1.5V Drive | 20V | 2.5A | 72 mOhm @ 2.5A, 4.5V | 1V @ 1mA | 3.6nC @ 4.5V | 260pF @ 10V | 1W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-TSST |
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Rohm Semiconductor |
MOSFET N/P-CH 20V 2.5A TSST8
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate, 1.5V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.5A
- Rds On (Max) @ Id, Vgs: 72 mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
- Power - Max: 1W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 8-TSST
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Package: 8-SMD, Flat Lead |
Stock24,150 |
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Logic Level Gate, 1.5V Drive | 20V | 2.5A | 72 mOhm @ 2.5A, 4.5V | 1V @ 1mA | 3.6nC @ 4.5V | 260pF @ 10V | 1W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-TSST |
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Rohm Semiconductor |
MOSFET 2P-CH 12V 4.5A TSMT8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 6V
- Power - Max: 1.5W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: TSMT8
|
Package: 8-SMD, Flat Lead |
Stock5,168 |
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Logic Level Gate | 12V | 4.5A | 29 mOhm @ 4.5A, 4.5V | 1V @ 1mA | 31nC @ 4.5V | 2450pF @ 6V | 1.5W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TSMT8 |
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Rohm Semiconductor |
MOSFET 2P-CH 30V 2.5A TSST8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.5A
- Rds On (Max) @ Id, Vgs: 84 mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
- Power - Max: 1.25W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 8-TSST
|
Package: 8-SMD, Flat Lead |
Stock45,180 |
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Logic Level Gate | 30V | 2.5A | 84 mOhm @ 2.5A, 10V | 2.5V @ 1mA | 4.8nC @ 5V | 460pF @ 10V | 1.25W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-TSST |
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Rohm Semiconductor |
MOSFET 2N-CH 30V 1A TSMT6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1A
- Rds On (Max) @ Id, Vgs: 238 mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 10V
- Power - Max: 1.25W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSMT6 (SC-95)
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock578,508 |
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Logic Level Gate | 30V | 1A | 238 mOhm @ 1A, 4.5V | 1.5V @ 1mA | 2.4nC @ 4.5V | 77pF @ 10V | 1.25W | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSMT6 (SC-95) |
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Rohm Semiconductor |
MOSFET 2P-CH 12V 2A TSMT6
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 2A
- Rds On (Max) @ Id, Vgs: 105 mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 6V
- Power - Max: 600mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSMT6 (SC-95)
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock464,472 |
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Logic Level Gate | 12V | 2A | 105 mOhm @ 2A, 4.5V | 1V @ 1mA | 6.5nC @ 4.5V | 770pF @ 6V | 600mW | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSMT6 (SC-95) |
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Rohm Semiconductor |
MOSFET N/P-CH 30V/20V 1.5A TSMT6
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V, 20V
- Current - Continuous Drain (Id) @ 25°C: 1.5A
- Rds On (Max) @ Id, Vgs: 230 mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
- Power - Max: 1.25W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSMT6 (SC-95)
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock313,884 |
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Logic Level Gate | 30V, 20V | 1.5A | 230 mOhm @ 1.5A, 4.5V | 1.5V @ 1mA | 1.6nC @ 4.5V | 80pF @ 10V | 1.25W | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSMT6 (SC-95) |
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Rohm Semiconductor |
MOSFET 2N-CH 30V .1A SOT-363
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 100mA
- Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
- Power - Max: 150mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: UMT6
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock3,766,380 |
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Logic Level Gate | 30V | 100mA | 8 Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 13pF @ 5V | 150mW | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | UMT6 |
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Rohm Semiconductor |
MOSFET 2N-CH 60V 0.25A UMT6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 250mA
- Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
- Power - Max: 150mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: UMT6
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock782,052 |
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Logic Level Gate, 2.5V Drive | 60V | 250mA | 2.4 Ohm @ 250mA, 10V | 2.3V @ 1mA | - | 15pF @ 25V | 150mW | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | UMT6 |
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Rohm Semiconductor |
MOSFET 2N-CH 50V 0.2A EMT6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate, 0.9V Drive
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 200mA
- Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V
- Power - Max: 120mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: EMT6
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Package: SOT-563, SOT-666 |
Stock260,514 |
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Logic Level Gate, 0.9V Drive | 50V | 200mA | 2.2 Ohm @ 200mA, 4.5V | 800mV @ 1mA | - | 26pF @ 10V | 120mW | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | EMT6 |
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Rohm Semiconductor |
MOSFET 2N-CH 1200V 120A MODULE
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 120A
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 2.7V @ 22mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 10V
- Power - Max: 780W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: -
- Package / Case: Module
- Supplier Device Package: Module
|
Package: Module |
Stock4,992 |
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Standard | 1200V (1.2kV) | 120A | - | 2.7V @ 22mA | - | 14000pF @ 10V | 780W | -40°C ~ 150°C (TJ) | - | Module | Module |
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Rohm Semiconductor |
MOSFET 2N-CH 60V 4.5A SOP8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP (5.0x6.0)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock22,524 |
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Logic Level Gate | 60V | 4.5A | 65 mOhm @ 4.5A, 10V | 2.5V @ 1mA | 10nC @ 5V | 500pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP (5.0x6.0) |
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Rohm Semiconductor |
MOSFET N/P-CH 30V/20V TUMT6
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V, 20V
- Current - Continuous Drain (Id) @ 25°C: 1.5A, 1A
- Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
- Power - Max: 1W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: TUMT6
|
Package: 6-SMD, Flat Leads |
Stock1,609,164 |
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Standard | 30V, 20V | 1.5A, 1A | 240 mOhm @ 1.5A, 4.5V | 1.5V @ 1mA | 2.2nC @ 4.5V | 80pF @ 10V | 1W | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | TUMT6 |
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Rohm Semiconductor |
MOSFET 2N-CH 45V 1A TSMT6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 45V
- Current - Continuous Drain (Id) @ 25°C: 1A
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSMT6 (SC-95)
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock361,212 |
|
Standard | 45V | 1A | - | 1.5V @ 1mA | - | - | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSMT6 (SC-95) |
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Rohm Semiconductor |
MOSFET 2N-CH 30V 2A TSMT5
- FET Type: 2 N-Channel (Dual) Common Source
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2A
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 10V
- Power - Max: 1.25W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-5 Thin, TSOT-23-5
- Supplier Device Package: TSMT5
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Package: SOT-23-5 Thin, TSOT-23-5 |
Stock36,000 |
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Logic Level Gate | 30V | 2A | 100 mOhm @ 2A, 4.5V | 1.5V @ 1mA | 3.9nC @ 4.5V | 175pF @ 10V | 1.25W | 150°C (TJ) | Surface Mount | SOT-23-5 Thin, TSOT-23-5 | TSMT5 |
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Rohm Semiconductor |
MOSFET N/P-CH 20V 0.2A EMT6
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 200mA
- Rds On (Max) @ Id, Vgs: 1 Ohm @ 200mA, 4V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
- Power - Max: 150mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: EMT6
|
Package: SOT-563, SOT-666 |
Stock1,647,552 |
|
Logic Level Gate | 20V | 200mA | 1 Ohm @ 200mA, 4V | 1V @ 1mA | - | 25pF @ 10V | 150mW | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | EMT6 |
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Rohm Semiconductor |
60V 24A, DUAL NCH+NCH, HSOP8, PO
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 24A (Tc)
- Rds On (Max) @ Id, Vgs: 11.5mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V
- Power - Max: 3W (Ta), 26W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-HSOP
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Package: - |
Stock7,410 |
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- | 60V | 13.5A (Ta), 24A (Tc) | 11.5mOhm @ 13.5A, 10V | 2.5V @ 1mA | 22nC @ 10V | 1400pF @ 30V | 3W (Ta), 26W (Tc) | 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-HSOP |
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Rohm Semiconductor |
MOSFET 2N-CH 100V 4.5A 8HSMT
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 13A (Tc)
- Rds On (Max) @ Id, Vgs: 57mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V
- Power - Max: 2W (Ta), 14W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-HSMT (3.2x3)
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Package: - |
Stock12,000 |
|
- | 100V | 4.5A (Ta), 13A (Tc) | 57mOhm @ 4.5A, 10V | 2.5V @ 1mA | 6.7nC @ 10V | 305pF @ 50V | 2W (Ta), 14W (Tc) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-HSMT (3.2x3) |
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Rohm Semiconductor |
MOSFET 2N-CH 40V 5.2A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
- Rds On (Max) @ Id, Vgs: 85mOhm @ 5.2A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V
- Power - Max: 1.4W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
|
Package: - |
Stock52,380 |
|
- | 40V | 5.2A (Ta) | 85mOhm @ 5.2A, 10V | 2.5V @ 1mA | 1.7nC @ 5V | 100pF @ 10V | 1.4W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET 2N-CH 60V 4.5A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
- Power - Max: 1.4W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
|
Package: - |
Stock52,338 |
|
- | 60V | 4.5A (Ta) | 65mOhm @ 4.5A, 10V | 2.5V @ 1mA | 10nC @ 5V | 500pF @ 10V | 1.4W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET 2N-CH 30V 9A TSMT8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
- Power - Max: 1.5W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: TSMT8
|
Package: - |
Stock8,760 |
|
- | 30V | 9A (Ta) | 16mOhm @ 9A, 10V | 2.5V @ 1mA | 15.5nC @ 10V | 640pF @ 15V | 1.5W (Ta) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TSMT8 |
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Rohm Semiconductor |
MOSFET N/P-CH 45V 4.5A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 45V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta)
- Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
|
Package: - |
Stock6,612 |
|
- | 45V | 4.5A (Ta), 3.5A (Ta) | 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V | 2.5V @ 1mA | 9.6nC @ 5V, 18.2nC @ 5V | 550pF @ 10V, 1700pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET N/P-CH 45V 4.5A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 45V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta)
- Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
- Power - Max: 1.4W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock6,465 |
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- | 45V | 4.5A (Ta), 3.5A (Ta) | 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V | 2.5V @ 1mA | 9.6nC @ 5V, 18.2nC @ 5V | 550pF @ 10V, 1700pF @ 10V | 1.4W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET 2N-CH 100V 2.5A/7A 8HSMT
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 7A (Tc)
- Rds On (Max) @ Id, Vgs: 193mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
- Power - Max: 2W (Ta), 13W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-HSMT (3.2x3)
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Package: - |
Stock8,970 |
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- | 100V | 2.5A (Ta), 7A (Tc) | 193mOhm @ 2.5A, 10V | 2.5V @ 1mA | 2.9nC @ 10V | 90pF @ 50V | 2W (Ta), 13W (Tc) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-HSMT (3.2x3) |
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Rohm Semiconductor |
MOSFET 2N-CH 30V 15A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3320pF @ 15V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock7,461 |
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- | 30V | 15A (Ta) | 9.3mOhm @ 15A, 10V | 2.5V @ 1mA | 81nC @ 10V | 3320pF @ 15V | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET 2N-CH 30V 7A/8.5A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 8.5A (Ta)
- Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V, 19.6mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 5V, 17.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V, 830pF @ 10V
- Power - Max: 1.4W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock7,425 |
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- | 30V | 7A (Ta), 8.5A (Ta) | 24mOhm @ 7A, 10V, 19.6mOhm @ 8.5A, 10V | 2.5V @ 1mA | 16.8nC @ 5V, 17.8nC @ 5V | 660pF @ 10V, 830pF @ 10V | 1.4W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET N/P-CH 45V 6A/4A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 45V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock7,500 |
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- | 45V | 6A (Ta), 4A (Ta) | 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V | 2.5V @ 1mA | 21.6nC @ 5V, 28nC @ 5V | 1400pF @ 10V, 2400pF @ 10V | 2W | 150°C | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET N/P-CH 45V 6A/4A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 45V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock5,970 |
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- | 45V | 6A (Ta), 4A (Ta) | 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V | 2.5V @ 1mA | 21.6nC @ 5V, 28nC @ 5V | 1400pF @ 10V, 2400pF @10V | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |