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Rohm Semiconductor |
MOSFET 2N-CH 50V 0.2A EMT6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate, 1.2V Drive
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 200mA
- Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
- Power - Max: 150mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: EMT6
|
Package: SOT-563, SOT-666 |
Stock7,024 |
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Logic Level Gate, 1.2V Drive | 50V | 200mA | 2.2 Ohm @ 200mA, 4.5V | 1V @ 1mA | - | 25pF @ 10V | 150mW | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | EMT6 |
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Rohm Semiconductor |
30V NCH+NCH MIDDLE POWER MOSFET
- FET Type: 2 N-Channel (Dual)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.5A
- Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: HUML2020L8
|
Package: 6-UDFN Exposed Pad |
Stock4,688 |
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- | 30V | 5.5A | 42 mOhm @ 5A, 4.5V | 1.5V @ 1mA | 4nC @ 4.5V | 450pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | HUML2020L8 |
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Rohm Semiconductor |
MOSFET N/P-CH 80V 3.4A/2.6A SOP8
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock21,264 |
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Logic Level Gate | 80V | 3.4A, 2.6A | 130 mOhm @ 3.4A, 10V | 2.5V @ 1mA | 9.2nC @ 5V | 600pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET 2N-CH 30V 5A SOP8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A
- Rds On (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock1,311,000 |
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Logic Level Gate | 30V | 5A | 51 mOhm @ 5A, 10V | 2.5V @ 1mA | 5.5nC @ 5V | 230pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET N/P-CH 30V 3.5A TSMT8
- FET Type: N and P-Channel
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.5A
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: TSMT8
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Package: 8-SMD, Flat Lead |
Stock2,896 |
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- | 30V | 3.5A | - | - | - | - | - | - | Surface Mount | 8-SMD, Flat Lead | TSMT8 |
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Rohm Semiconductor |
MOSFET 2N-CH 80V 3.4A 8SOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 3.4A
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
- Power - Max: 1.4W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,408 |
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Logic Level Gate | 80V | 3.4A | 130 mOhm @ 3.4A, 10V | 2.5V @ 1mA | 6.6nC @ 5V | 600pF @ 10V | 1.4W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET 2P-CH 30V 7A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock12,420 |
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Logic Level Gate | 30V | 7A | 28 mOhm @ 7A, 10V | 2.5V @ 1mA | 25nC @ 5V | 2600pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET 2P-CH 30V 9A SOP8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A
- Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock30,756 |
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Logic Level Gate | 30V | 9A | 18.5 mOhm @ 9A, 10V | 2.5V @ 1mA | 35nC @ 5V | 3000pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET N/P-CH 30V 3.5A SOP8
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.5A
- Rds On (Max) @ Id, Vgs: 83 mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock29,976 |
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Standard | 30V | 3.5A | 83 mOhm @ 3.5A, 10V | 2.5V @ 1mA | 3.5nC @ 5V | 140pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET 2P-CH 20V 2.5A TSST8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.5A
- Rds On (Max) @ Id, Vgs: 68 mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 10V
- Power - Max: 650mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 8-TSST
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Package: 8-SMD, Flat Lead |
Stock730,380 |
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Logic Level Gate | 20V | 2.5A | 68 mOhm @ 2.5A, 4.5V | 1V @ 1mA | 12nC @ 4.5V | 1270pF @ 10V | 650mW | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-TSST |
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Rohm Semiconductor |
SIC POWER MODULE
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 5.6V @ 50mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
- Power - Max: 880W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Module
- Supplier Device Package: Module
|
Package: Module |
Stock4,144 |
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Standard | 1200V (1.2kV) | - | - | 5.6V @ 50mA | - | 900pF @ 10V | 880W | 175°C (TJ) | Surface Mount | Module | Module |
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Rohm Semiconductor |
SIC POWER MODULE-1200V-80A
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 80A
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 4V @ 13.2mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
- Power - Max: 600W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
|
Package: Module |
Stock7,440 |
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Standard | 1200V (1.2kV) | 80A | - | 4V @ 13.2mA | - | 800pF @ 10V | 600W | 175°C (TJ) | Chassis Mount | Module | Module |
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Rohm Semiconductor |
MOSFET 2N-CH 1200V 300A
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 300A
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 4V @ 68mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 35000pF @ 10V
- Power - Max: 1875W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
|
Package: Module |
Stock7,376 |
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Standard | 1200V (1.2kV) | 300A | - | 4V @ 68mA | - | 35000pF @ 10V | 1875W | -40°C ~ 150°C (TJ) | Chassis Mount | Module | Module |
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Rohm Semiconductor |
MOSFET 2P-CH 30V 7A SOP8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,232 |
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Logic Level Gate | 30V | 7A | 29 mOhm @ 7A, 10V | 2.5V @ 1mA | 18nC @ 5V | 1200pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET N/P-CH 30V 6A/7A SOP8
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A, 7A
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,168 |
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Logic Level Gate | 30V | 6A, 7A | 30 mOhm @ 6A, 10V | 2.5V @ 1mA | 7.2nC @ 5V | 520pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET 2N-CH 30V 9A SOP8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A
- Rds On (Max) @ Id, Vgs: 17 mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock66,132 |
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Logic Level Gate | 30V | 9A | 17 mOhm @ 9A, 10V | 2.5V @ 1mA | 21nC @ 5V | 1190pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
60V PCH+PCH MIDDLE POWER MOSFET
- FET Type: 2 P-Channel (Dual)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 10V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,568 |
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- | 60V | 4.5A | 70 mOhm @ 4.5A, 10V | 3V @ 1mA | 40nC @ 10V | 2500pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET N/P-CH 100V 3A/2.5A SOP8
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock1,227,840 |
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Standard | 100V | 3A, 2.5A | - | - | - | - | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET 2P-CH 30V 4.5A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 56 mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock19,044 |
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Logic Level Gate | 30V | 4.5A | 56 mOhm @ 4.5A, 10V | 2.5V @ 1mA | 8.5nC @ 5V | 850pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET N/P-CH 100V 2A/1.5A TSMT8
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
- Rds On (Max) @ Id, Vgs: 325 mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
- Power - Max: 1.5W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: TSMT8
|
Package: 8-SMD, Flat Lead |
Stock2,352 |
|
Logic Level Gate | 100V | 2A, 1.5A | 325 mOhm @ 2A, 10V | 2.5V @ 1mA | 4.7nC @ 5V | 290pF @ 25V | 1.5W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TSMT8 |
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Rohm Semiconductor |
30V NCH+NCH MIDDLE POWER MOSFET,
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 27A, 80A
- Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 32A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 15V
- Power - Max: 29W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-HSOP
|
Package: 8-PowerTDFN |
Stock2,544 |
|
- | 30V | 27A, 80A | 2.4 mOhm @ 32A, 10V | 2.5V @ 1mA | 47nC @ 4.5V | 6100pF @ 15V | 29W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-HSOP |
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Rohm Semiconductor |
MOSFET 2P-CH 30V 4.5A SOP8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 56 mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,608 |
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Logic Level Gate | 30V | 4.5A | 56 mOhm @ 4.5A, 10V | 2.5V @ 1mA | 8nC @ 5V | 800pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET 2N-CH 45V 4.5A SOP8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 45V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock113,208 |
|
Logic Level Gate | 45V | 4.5A | 46 mOhm @ 4.5A, 10V | 2.5V @ 1mA | 9.6nC @ 5V | 550pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MIDDLE POWER MOSFET SERIES (DUAL
- FET Type: N and P-Channel
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A, 7A
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,264 |
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- | 30V | 6A, 7A | 29 mOhm @ 7A, 10V | 2.5V @ 1mA | 18nC @ 5V | 1200pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET 2N-CH 30V 3.5A TSMT8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.5A
- Rds On (Max) @ Id, Vgs: 54 mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
- Power - Max: 1.25W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: TSMT8
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Package: 8-SMD, Flat Lead |
Stock4,832 |
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Logic Level Gate | 30V | 3.5A | 54 mOhm @ 3.5A, 4.5V | 1.5V @ 1mA | 4.6nC @ 4.5V | 285pF @ 10V | 1.25W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TSMT8 |
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Rohm Semiconductor |
MOSFET 2N-CH 30V 6A TSMT8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V
- Power - Max: 550mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: TSMT8
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Package: 8-SMD, Flat Lead |
Stock2,960 |
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Standard | 30V | 6A | 28 mOhm @ 6A, 10V | 2.5V @ 1mA | 20nC @ 10V | 390pF @ 10V | 550mW | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TSMT8 |
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Rohm Semiconductor |
MOSFET N/P-CH 30V 4A TSMT8
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Rds On (Max) @ Id, Vgs: 42 mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
- Power - Max: 1.5W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: TSMT8
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Package: 8-SMD, Flat Lead |
Stock2,208 |
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Logic Level Gate | 30V | 4A | 42 mOhm @ 4A, 10V | 2.5V @ 1mA | 3.4nC @ 5V | 250pF @ 10V | 1.5W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TSMT8 |
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Rohm Semiconductor |
MOSFET 2N-CH 30V 14A HSOP8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 14A
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V
- Power - Max: 3W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-HSOP
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Package: 8-PowerTDFN |
Stock5,056 |
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Logic Level Gate | 30V | 14A | 5 mOhm @ 14A, 10V | 2.5V @ 10mA | 24nC @ 4.5V | 2550pF @ 15V | 3W | 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-HSOP |