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Rohm Semiconductor |
750V, 34A, 3-PIN THD, TRENCH-STR
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 750 V
- Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 4.8V @ 8.89mA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V
- Vgs (Max): +21V, -4V
- FET Feature: -
- Power Dissipation (Max): 115W
- Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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Package: - |
Stock1,218 |
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SiCFET (Silicon Carbide) | 750 V | 34A (Tc) | 18V | 4.8V @ 8.89mA | 63 nC @ 18 V | 1460 pF @ 500 V | +21V, -4V | - | 115W | 59mOhm @ 17A, 18V | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 200V 10A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.25V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Rds On (Max) @ Id, Vgs: 182mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock7,395 |
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MOSFET (Metal Oxide) | 200 V | 10A (Tc) | 10V | 5.25V @ 1mA | 25 nC @ 10 V | 1400 pF @ 25 V | ±30V | - | 85W (Tc) | 182mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
NCH 100V 30A POWER MOSFET : RSJ3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Ta)
- Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263S
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock3,798 |
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MOSFET (Metal Oxide) | 100 V | 30A (Ta) | 4V, 10V | 2.5V @ 1mA | 60 nC @ 10 V | 2100 pF @ 25 V | ±20V | - | 50W (Ta) | 46mOhm @ 15A, 10V | 150°C (TJ) | Surface Mount | TO-263S | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
MOSFET N-CHANNEL 600V 76A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 740W (Tc)
- Rds On (Max) @ Id, Vgs: 55mOhm @ 38A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 76A (Tc) | 10V | 5V @ 1mA | 115 nC @ 10 V | 7000 pF @ 25 V | ±30V | - | 740W (Tc) | 55mOhm @ 38A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
1200V, 24A, 7-PIN SMD, TRENCH-ST
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
- Vgs (Max): +21V, -4V
- FET Feature: -
- Power Dissipation (Max): 93W
- Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7LA
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Package: - |
Request a Quote |
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SiC (Silicon Carbide Junction Transistor) | 1200 V | 24A (Tc) | 18V | 4.8V @ 6.45mA | 64 nC @ 18 V | 1498 pF @ 800 V | +21V, -4V | - | 93W | 81mOhm @ 12A, 18V | 175°C (TJ) | Surface Mount | TO-263-7LA | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Rohm Semiconductor |
600V 1.3A SOT-223-3, HIGH-SPEED
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 7.8W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223-3
- Package / Case: TO-261-3
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Package: - |
Stock11,964 |
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MOSFET (Metal Oxide) | 600 V | 1.3A (Tc) | 10V | 5.5V @ 1mA | 8 nC @ 10 V | 185 pF @ 25 V | ±20V | - | 7.8W (Tc) | 1.5Ohm @ 1A, 10V | 150°C (TJ) | Surface Mount | SOT-223-3 | TO-261-3 |
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Rohm Semiconductor |
650V 20A TO-220FM, HIGH-SPEED SW
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 630µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock2,997 |
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MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 5V @ 630µA | 40 nC @ 10 V | 1550 pF @ 25 V | ±20V | - | 68W (Tc) | 205mOhm @ 9.5A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 60V 3A TSMT3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT3
- Package / Case: SC-96
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Package: - |
Stock13,707 |
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MOSFET (Metal Oxide) | 60 V | 3A (Ta) | 4V, 10V | 2.5V @ 1mA | 5 nC @ 5 V | 380 pF @ 10 V | ±20V | - | 700mW (Ta) | 85mOhm @ 3A, 10V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
HIGH-SPEED SWITCHING NCH 800V 6A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 52W (Tc)
- Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock2,352 |
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MOSFET (Metal Oxide) | 800 V | 6A (Ta) | 10V | 4.5V @ 4mA | 22 nC @ 10 V | 650 pF @ 100 V | ±20V | - | 52W (Tc) | 900mOhm @ 3A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 800V 5A LPTS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 120W (Tc)
- Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock5,610 |
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MOSFET (Metal Oxide) | 800 V | 5A (Tc) | 10V | 5V @ 1mA | 20 nC @ 10 V | 500 pF @ 25 V | ±30V | - | 120W (Tc) | 2.1Ohm @ 2.5A, 10V | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
MOSFET N-CH 30V 30A/80A 8HSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 39.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta)
- Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerTDFN
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Package: - |
Stock7,140 |
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MOSFET (Metal Oxide) | 30 V | 30A (Ta), 80A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 39.8 nC @ 10 V | 2500 pF @ 15 V | ±20V | - | 3W (Ta) | 2.2mOhm @ 30A, 10V | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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Rohm Semiconductor |
MOSFET N-CH 650V 7A LPTS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 78W (Tc)
- Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock240 |
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MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 5V @ 200µA | 14.5 nC @ 10 V | 470 pF @ 25 V | ±20V | - | 78W (Tc) | 665mOhm @ 2.4A, 10V | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
MOSFET N-CH 600V 12A TO220FM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 7V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 390mOhm @ 6A, 15V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 15V | 7V @ 2.5mA | 28 nC @ 15 V | 900 pF @ 100 V | ±30V | - | 60W (Tc) | 390mOhm @ 6A, 15V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
4V DRIVE NCH MOSFET: MOSFETS ARE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Stock7,356 |
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MOSFET (Metal Oxide) | 30 V | 10A (Ta) | 4V, 10V | 2.5V @ 1mA | 11 nC @ 5 V | 800 pF @ 10 V | ±20V | - | 2W (Ta) | 13mOhm @ 10A, 10V | 150°C | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
1200V, 14A, THD, SILICON-CARBIDE
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 4V @ 1.4mA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 400 V
- Input Capacitance (Ciss) (Max) @ Vds: 667 pF @ 800 V
- Vgs (Max): +22V, -6V
- FET Feature: -
- Power Dissipation (Max): 108W (Tc)
- Rds On (Max) @ Id, Vgs: 364mOhm @ 4A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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Package: - |
Stock1,350 |
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SiCFET (Silicon Carbide) | 1200 V | 14A (Tc) | 18V | 4V @ 1.4mA | 36 nC @ 400 V | 667 pF @ 800 V | +22V, -6V | - | 108W (Tc) | 364mOhm @ 4A, 18V | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Rohm Semiconductor |
600V 10A TO-220FM, PRESTOMOS WIT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
- Vgs(th) (Max) @ Id: 6.5V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 61W (Tc)
- Rds On (Max) @ Id, Vgs: 204mOhm @ 4A, 15V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock3,150 |
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MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V, 15V | 6.5V @ 600µA | 27 nC @ 10 V | 1250 pF @ 100 V | ±30V | - | 61W (Tc) | 204mOhm @ 4A, 15V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
NCH 45V 2.5A SMALL SIGNAL MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT3
- Package / Case: SC-96
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Package: - |
Stock8,625 |
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MOSFET (Metal Oxide) | 45 V | 2.5A (Ta) | 4V, 10V | 3V @ 1mA | 3.6 nC @ 5 V | 260 pF @ 10 V | ±20V | - | 700mW (Ta) | 100mOhm @ 2.5A, 10V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
PCH -40V -8A SMALL SIGNAL POWER
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Rds On (Max) @ Id, Vgs: 18.2mOhm @ 8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT8
- Package / Case: 8-SMD, Flat Lead
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Package: - |
Stock13,065 |
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MOSFET (Metal Oxide) | 40 V | 8A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 37 nC @ 10 V | 2060 pF @ 20 V | ±20V | - | 1.1W (Ta) | 18.2mOhm @ 8A, 10V | 150°C (TJ) | Surface Mount | TSMT8 | 8-SMD, Flat Lead |
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Rohm Semiconductor |
MOSFET N-CH 60V 4.5A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Stock3,519 |
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MOSFET (Metal Oxide) | 60 V | 4.5A (Ta) | 4.5V, 10V | 2.7V @ 50µA | 5.6 nC @ 10 V | 285 pF @ 30 V | ±20V | - | 2W (Ta) | 59mOhm @ 4.5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 45V 3A TSMT3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT3
- Package / Case: SC-96
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Package: - |
Stock26,508 |
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MOSFET (Metal Oxide) | 45 V | 3A (Ta) | 2.5V, 4.5V | 1.5V @ 1mA | 6.2 nC @ 4.5 V | 510 pF @ 10 V | ±12V | - | 700mW (Ta) | 67mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET N-CH 30V 2.5A TSMT3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT3
- Package / Case: SC-96
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Package: - |
Stock8,670 |
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MOSFET (Metal Oxide) | 30 V | 2.5A (Ta) | 4V, 10V | 2.5V @ 1mA | 4.1 nC @ 5 V | 165 pF @ 10 V | ±20V | - | 700mW (Ta) | 70mOhm @ 2.5A, 10V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET N-CH 600V 35A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 379W (Tc)
- Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: - |
Stock1,740 |
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MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 4V @ 1mA | 110 nC @ 10 V | 2720 pF @ 25 V | ±20V | - | 379W (Tc) | 102mOhm @ 18.1A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 42A TO247G
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 7V @ 5.5mA
- Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 495W (Tc)
- Rds On (Max) @ Id, Vgs: 104mOhm @ 21A, 15V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247G
- Package / Case: TO-247-3
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Package: - |
Stock288 |
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MOSFET (Metal Oxide) | 600 V | 42A (Tc) | 15V | 7V @ 5.5mA | 100 nC @ 15 V | 3500 pF @ 100 V | ±30V | - | 495W (Tc) | 104mOhm @ 21A, 15V | -55°C ~ 150°C (TJ) | Through Hole | TO-247G | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 30V 4A TSMT3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT3
- Package / Case: SC-96
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Package: - |
Stock44,058 |
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MOSFET (Metal Oxide) | 30 V | 4A (Ta) | 2.5V, 4.5V | 1.5V @ 1mA | 8.3 nC @ 4.5 V | 475 pF @ 10 V | ±12V | - | 700mW (Ta) | 48mOhm @ 4A, 4.5V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
600V 9A TO-220FM, HIGH-SPEED SWI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 48W (Tc)
- Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock1,653 |
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MOSFET (Metal Oxide) | 600 V | 9A (Ta) | 10V | 5V @ 1mA | 16.5 nC @ 10 V | 540 pF @ 25 V | ±20V | - | 48W (Tc) | 535mOhm @ 2.8A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 100V 80A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 119W (Tc)
- Rds On (Max) @ Id, Vgs: 11.6mOhm @ 80A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock28,242 |
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MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 6V, 10V | 4V @ 1mA | 37 nC @ 10 V | 1940 pF @ 50 V | ±20V | - | 119W (Tc) | 11.6mOhm @ 80A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 600V 30A TO220FM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Rds On (Max) @ Id, Vgs: 150mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 5V @ 1mA | 43 nC @ 10 V | 2180 pF @ 25 V | ±30V | - | 90W (Tc) | 150mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 9A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 7V @ 1.38mA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock7,380 |
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MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 15V | 7V @ 1.38mA | 22 nC @ 15 V | 645 pF @ 100 V | ±30V | - | 125W (Tc) | 585mOhm @ 4.5A, 15V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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