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Rohm Semiconductor |
MOSFET N-CH 250V 4A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 29W (Tc)
- Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock4,011 |
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MOSFET (Metal Oxide) | 250 V | 4A (Tc) | 10V | 5.5V @ 1mA | 8.5 nC @ 10 V | 350 pF @ 25 V | ±30V | - | 29W (Tc) | 1.3Ohm @ 2A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
SICFET N-CH 1200V 55A TO247N
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5.6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V
- Vgs (Max): +22V, -4V
- FET Feature: -
- Power Dissipation (Max): 262W
- Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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Package: - |
Stock2,613 |
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SiCFET (Silicon Carbide) | 1200 V | 55A (Tc) | 18V | 5.6V @ 10mA | 107 nC @ 18 V | 1337 pF @ 800 V | +22V, -4V | - | 262W | 52mOhm @ 20A, 18V | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Rohm Semiconductor |
HIGH-SPEED SWITCHING, NCH 650V 7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 78W (Tc)
- Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock7,434 |
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MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 5V @ 200µA | 14.5 nC @ 10 V | 470 pF @ 25 V | ±20V | - | 78W (Tc) | 665mOhm @ 2.4A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 30V 6.5A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 27mOhm @ 6.5A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 6.5A (Ta) | 4V, 10V | 2.5V @ 1mA | 8.6 nC @ 5 V | 430 pF @ 10 V | ±20V | - | 2W (Ta) | 27mOhm @ 6.5A, 10V | 150°C | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
NCH 60V 400MA, SOT-23, SMALL SIG
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Rds On (Max) @ Id, Vgs: 680mOhm @ 400mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock16,704 |
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MOSFET (Metal Oxide) | 60 V | 400mA (Ta) | 2.5V, 10V | 2V @ 10µA | - | 47 pF @ 30 V | ±20V | - | 350mW (Ta) | 680mOhm @ 400mA, 10V | 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 76A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 735W (Tc)
- Rds On (Max) @ Id, Vgs: 42mOhm @ 44.4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: - |
Stock1,401 |
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MOSFET (Metal Oxide) | 600 V | 76A (Tc) | 10V | 4V @ 1mA | 260 nC @ 10 V | 6500 pF @ 25 V | ±20V | - | 735W (Tc) | 42mOhm @ 44.4A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
MOSFET P-CH 30V 3A TSMT3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT3
- Package / Case: SC-96
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Package: - |
Stock26,475 |
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MOSFET (Metal Oxide) | 30 V | 3A (Ta) | 4V, 10V | 2.5V @ 1mA | 5.2 nC @ 5 V | 480 pF @ 10 V | ±20V | - | 700mW (Ta) | 75mOhm @ 3A, 10V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
NCH 60V 5.5A, TSMT8, POWER MOSFE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Rds On (Max) @ Id, Vgs: 29mOhm @ 5.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT8
- Package / Case: 8-SMD, Flat Lead
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Package: - |
Stock8,910 |
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MOSFET (Metal Oxide) | 60 V | 5.5A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 7.6 nC @ 10 V | 460 pF @ 30 V | ±20V | - | 1.1W (Ta) | 29mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | TSMT8 | 8-SMD, Flat Lead |
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Rohm Semiconductor |
MOSFET N-CH 800V 2A LPTS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 62W (Tc)
- Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock2,250 |
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MOSFET (Metal Oxide) | 800 V | 2A (Tc) | 10V | 5V @ 1mA | 13 nC @ 10 V | 250 pF @ 25 V | ±30V | - | 62W (Tc) | 4.3Ohm @ 1A, 10V | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
NCH 60V 70A, TO-220AB, POWER MOS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Rds On (Max) @ Id, Vgs: 7.2mOhm @ 70A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Stock3,972 |
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MOSFET (Metal Oxide) | 60 V | 70A (Tc) | 4.5V, 10V | 2.5V @ 50µA | 55 nC @ 10 V | 2600 pF @ 30 V | ±20V | - | 96W (Tc) | 7.2mOhm @ 70A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Rohm Semiconductor |
MOSFET P-CH 20V 10A HUML2020L8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: HUML2020L8
- Package / Case: 8-PowerUDFN
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Package: - |
Stock8,502 |
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MOSFET (Metal Oxide) | 20 V | 10A (Ta) | 1.8V, 4.5V | 1.2V @ 1mA | 23.5 nC @ 4.5 V | 1660 pF @ 10 V | ±8V | - | 2W (Ta) | 15.6mOhm @ 10A, 4.5V | 150°C (TJ) | Surface Mount | HUML2020L8 | 8-PowerUDFN |
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Rohm Semiconductor |
600V 23A TO-3PF, PRESTOMOS WITH
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
- Vgs(th) (Max) @ Id: 6.5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 99W (Tc)
- Rds On (Max) @ Id, Vgs: 71mOhm @ 16A, 15V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: TO-3P-3 Full Pack
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Package: - |
Stock1,260 |
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MOSFET (Metal Oxide) | 600 V | 23A (Tc) | 10V, 15V | 6.5V @ 1.5mA | 80 nC @ 10 V | 3700 pF @ 100 V | ±30V | - | 99W (Tc) | 71mOhm @ 16A, 15V | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
NCH 60V 50A, TO-252, POWER MOSFE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 11.3mOhm @ 35A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock6,324 |
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MOSFET (Metal Oxide) | 60 V | 35A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 14 nC @ 10 V | 970 pF @ 30 V | ±20V | - | 50W (Tc) | 11.3mOhm @ 35A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
HIGH-SPEED SWITCHING NCH 800V 9A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 59W (Tc)
- Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock5,613 |
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MOSFET (Metal Oxide) | 800 V | 9A (Ta) | 10V | 4.5V @ 5mA | 27 nC @ 10 V | 900 pF @ 100 V | ±20V | - | 59W (Tc) | 600mOhm @ 4.5A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
NCH 100V 6A, HUML2020L8, POWER M
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 53mOhm @ 6A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2020-8S
- Package / Case: 8-PowerUDFN
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Package: - |
Stock9,000 |
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MOSFET (Metal Oxide) | 100 V | 6A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 6.7 nC @ 10 V | 305 pF @ 50 V | ±20V | - | 2W (Ta) | 53mOhm @ 6A, 10V | 150°C (TJ) | Surface Mount | DFN2020-8S | 8-PowerUDFN |
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Rohm Semiconductor |
600V 7A TO-220FM, HIGH-SPEED SWI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 46W (Tc)
- Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock2,910 |
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MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 5V @ 1mA | 14.5 nC @ 10 V | 470 pF @ 25 V | ±20V | - | 46W (Tc) | 620mOhm @ 2.4A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 25A TO220FM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 7V @ 4.5mA
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock5,913 |
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MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 15V | 7V @ 4.5mA | 57 nC @ 15 V | 1900 pF @ 100 V | ±30V | - | 85W (Tc) | 182mOhm @ 12.5A, 15V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 45V 20A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 20W (Tc)
- Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock5,211 |
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MOSFET (Metal Oxide) | 45 V | 20A (Ta) | 4V, 10V | 2.5V @ 1mA | 12 nC @ 5 V | 950 pF @ 10 V | ±20V | - | 20W (Tc) | 28mOhm @ 20A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
NCH 600V 22A, TO-247, POWER MOSF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
- Vgs(th) (Max) @ Id: 6V @ 1.8mA
- Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 205W (Tc)
- Rds On (Max) @ Id, Vgs: 165mOhm @ 6.5A, 12V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247G
- Package / Case: TO-247-3
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Package: - |
Stock1,800 |
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MOSFET (Metal Oxide) | 600 V | 22A (Tc) | 10V, 12V | 6V @ 1.8mA | 33 nC @ 10 V | 1400 pF @ 100 V | ±30V | - | 205W (Tc) | 165mOhm @ 6.5A, 12V | 150°C (TJ) | Through Hole | TO-247G | TO-247-3 |
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Rohm Semiconductor |
SICFET N-CH 650V 21A TO247N
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
- Vgs (Max): +22V, -4V
- FET Feature: -
- Power Dissipation (Max): 103W
- Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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Package: - |
Stock6,750 |
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SiCFET (Silicon Carbide) | 650 V | 21A (Tc) | 18V | 5.6V @ 3.33mA | 38 nC @ 18 V | 460 pF @ 500 V | +22V, -4V | - | 103W | 156mOhm @ 6.7A, 18V | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Rohm Semiconductor |
NCH 40V 3.5A, TUMT6, POWER MOSFE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 910mW (Ta)
- Rds On (Max) @ Id, Vgs: 46mOhm @ 3.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TUMT6
- Package / Case: 6-SMD, Flat Leads
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Package: - |
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MOSFET (Metal Oxide) | 40 V | 3.5A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 3.5 nC @ 10 V | 150 pF @ 20 V | ±20V | - | 910mW (Ta) | 46mOhm @ 3.5A, 10V | 150°C (TJ) | Surface Mount | TUMT6 | 6-SMD, Flat Leads |
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Rohm Semiconductor |
800V 19A, TO-220FM, HIGH-SPEED S
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 265mOhm @ 9.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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Package: - |
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MOSFET (Metal Oxide) | 800 V | 19A (Tc) | 10V | 4.5V @ 7mA | 65 nC @ 10 V | 2100 pF @ 100 V | ±20V | - | 83W (Tc) | 265mOhm @ 9.5A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
1200V, 31A, 4-PIN THD, TRENCH-ST
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5.6V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
- Vgs (Max): +22V, -4V
- FET Feature: -
- Power Dissipation (Max): 165W
- Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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Package: - |
Stock1,095 |
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SiC (Silicon Carbide Junction Transistor) | 1200 V | 31A (Tj) | 18V | 5.6V @ 5mA | 60 nC @ 18 V | 785 pF @ 800 V | +22V, -4V | - | 165W | 104mOhm @ 10A, 18V | 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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Rohm Semiconductor |
SICFET N-CH 1200V 31A TO247-4L
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5.6V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
- Vgs (Max): +22V, -4V
- FET Feature: -
- Power Dissipation (Max): 165W
- Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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Package: - |
Stock1,620 |
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SiCFET (Silicon Carbide) | 1200 V | 31A (Tc) | 18V | 5.6V @ 5mA | 60 nC @ 18 V | 785 pF @ 800 V | +22V, -4V | - | 165W | 104mOhm @ 10A, 18V | 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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Rohm Semiconductor |
650V 35A TO-247, HIGH-SPEED SWIT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1.21mA
- Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 379W (Tc)
- Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247G
- Package / Case: TO-247-3
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Package: - |
Stock1,068 |
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MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 5V @ 1.21mA | 72 nC @ 10 V | 3000 pF @ 25 V | ±20V | - | 379W (Tc) | 115mOhm @ 18.1A, 10V | 150°C (TJ) | Through Hole | TO-247G | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 60V 15A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 20W (Tc)
- Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock6,975 |
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MOSFET (Metal Oxide) | 60 V | 15A (Ta) | 4V, 10V | 3V @ 1mA | 18 nC @ 10 V | 930 pF @ 10 V | ±20V | - | 20W (Tc) | 40mOhm @ 15A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 45V 1.6A TUMT3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45 V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 800mW
- Rds On (Max) @ Id, Vgs: 190mOhm @ 1.6A, 4.5V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: TUMT3
- Package / Case: 3-SMD, Flat Leads
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Package: - |
Stock36,567 |
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MOSFET (Metal Oxide) | 45 V | 1.6A (Ta) | - | 1.5V @ 1mA | 2.3 nC @ 4.5 V | 150 pF @ 10 V | ±12V | - | 800mW | 190mOhm @ 1.6A, 4.5V | 150°C | Surface Mount | TUMT3 | 3-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET N-CH 650V 35A TO3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1.21mA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 102W (Tc)
- Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: TO-3P-3 Full Pack
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Package: - |
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MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 4V @ 1.21mA | 110 nC @ 10 V | 2600 pF @ 25 V | ±20V | - | 102W (Tc) | 115mOhm @ 18.1A, 10V | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |