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Rohm Semiconductor |
MOSFET N-CH 60V 3.5A TSMT6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 950mW (Ta)
- Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT6 (SC-95)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: - |
Stock26,211 |
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MOSFET (Metal Oxide) | 60 V | 3.5A (Tc) | 4V, 10V | 3V @ 1mA | 6.5 nC @ 5 V | 430 pF @ 10 V | ±20V | - | 950mW (Ta) | 70mOhm @ 3.5A, 10V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET P-CH 45V 7A 8SOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 45 V | 7A (Ta) | 4V, 10V | 2.5V @ 1mA | 47.6 nC @ 5 V | 4100 pF @ 10 V | ±20V | - | 2W (Ta) | 27mOhm @ 7A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
650V 4A TO-220FM, HIGH-SPEED SWI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock2,985 |
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MOSFET (Metal Oxide) | 650 V | 4A (Ta) | 10V | 5V @ 130µA | 10 nC @ 10 V | 270 pF @ 25 V | ±20V | - | 40W (Tc) | 1.05Ohm @ 1.5A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 30A TO3PF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 7V @ 5.5mA
- Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 93W (Tc)
- Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: TO-3P-3 Full Pack
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Package: - |
Stock900 |
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MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 15V | 7V @ 5.5mA | 74 nC @ 15 V | 2500 pF @ 100 V | ±30V | - | 93W (Tc) | 143mOhm @ 15A, 15V | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
PCH -45V -7A POWER MOSFET. RSS07
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Stock13,809 |
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MOSFET (Metal Oxide) | 45 V | 7A (Ta) | 4V, 10V | 2.5V @ 1mA | 47.6 nC @ 5 V | 4100 pF @ 10 V | ±20V | - | 2W (Ta) | 27mOhm @ 7A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
AUTOMOTIVE PCH -30V -5A POWER MO
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Stock7,290 |
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MOSFET (Metal Oxide) | 30 V | 5A (Ta) | 4V, 10V | 2.5V @ 1mA | 9.2 nC @ 5 V | 850 pF @ 10 V | ±20V | - | 2W (Ta) | 50mOhm @ 5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
1200V, 43A, 4-PIN THD, TRENCH-ST
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
- Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
- Vgs (Max): +21V, -4V
- FET Feature: -
- Power Dissipation (Max): 176W
- Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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Package: - |
Stock1,023 |
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SiCFET (Silicon Carbide) | 1200 V | 43A (Tc) | 18V | 4.8V @ 11.1mA | 91 nC @ 18 V | 2335 pF @ 800 V | +21V, -4V | - | 176W | 47mOhm @ 21A, 18V | 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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Rohm Semiconductor |
MOSFET P-CH 60V 14A TO252
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 20W (Tc)
- Rds On (Max) @ Id, Vgs: 84mOhm @ 14A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock94,950 |
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MOSFET (Metal Oxide) | 60 V | 14A (Ta) | 4V, 10V | 3V @ 1mA | 27 nC @ 10 V | 1900 pF @ 10 V | ±20V | - | 20W (Tc) | 84mOhm @ 14A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
NCH 40V 100A, HSOP8, POWER MOSFE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 59W (Tc)
- Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerTDFN
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Package: - |
Stock7,269 |
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MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 24 nC @ 10 V | 1510 pF @ 20 V | ±20V | - | 3W (Ta), 59W (Tc) | 3.4mOhm @ 90A, 10V | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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Rohm Semiconductor |
PCH -20V -2.0A SMALL SIGNAL MOSF
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 260mOhm @ 2A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: DFN1616-6W
- Package / Case: 6-PowerWFDFN
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Package: - |
Stock7,440 |
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MOSFET (Metal Oxide) | 20 V | 2A (Ta) | 1.5V, 4.5V | 1.3V @ 1mA | 2 nC @ 4.5 V | 80 pF @ 10 V | ±8V | - | 1.5W (Ta) | 260mOhm @ 2A, 4.5V | 150°C (TJ) | Surface Mount, Wettable Flank | DFN1616-6W | 6-PowerWFDFN |
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Rohm Semiconductor |
MOSFET N-CH 600V 76A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 735W (Tc)
- Rds On (Max) @ Id, Vgs: 42mOhm @ 44.4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 76A (Tc) | 10V | 5V @ 1mA | 165 nC @ 10 V | 7400 pF @ 25 V | ±20V | - | 735W (Tc) | 42mOhm @ 44.4A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
1200V, 24A, 7-PIN SMD, TRENCH-ST
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
- Vgs (Max): +21V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7LA
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Package: - |
Request a Quote |
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SiC (Silicon Carbide Junction Transistor) | 1200 V | 24A (Tc) | 18V | 4.8V @ 6.45mA | 64 nC @ 18 V | 1498 pF @ 800 V | +21V, -4V | - | - | 81mOhm @ 12A, 18V | 175°C (TJ) | Surface Mount | TO-263-7LA | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Rohm Semiconductor |
600V 1A SOT-223-3, PRESTOMOS WIT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 7V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 6.6W (Tc)
- Rds On (Max) @ Id, Vgs: 3.25Ohm @ 1A, 15V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223-3
- Package / Case: TO-261-3
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Package: - |
Stock11,994 |
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MOSFET (Metal Oxide) | 600 V | 1A (Tc) | 15V | 7V @ 100µA | 7 nC @ 15 V | 130 pF @ 100 V | ±30V | - | 6.6W (Tc) | 3.25Ohm @ 1A, 15V | 150°C (TJ) | Surface Mount | SOT-223-3 | TO-261-3 |
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Rohm Semiconductor |
1200V, 24A, 7-PIN SMD, TRENCH-ST
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
- Vgs (Max): +21V, -4V
- FET Feature: -
- Power Dissipation (Max): 93W
- Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7L
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Package: - |
Stock2,847 |
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SiCFET (Silicon Carbide) | 1200 V | 24A (Tj) | 18V | 4.8V @ 6.45mA | 64 nC @ 18 V | 1498 pF @ 800 V | +21V, -4V | - | 93W | 81mOhm @ 12A, 18V | 175°C (TJ) | Surface Mount | TO-263-7L | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Rohm Semiconductor |
NCH 60V 650MA, SOT-23, SMALL SIG
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Rds On (Max) @ Id, Vgs: 680mOhm @ 650mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SST3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock1,509 |
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MOSFET (Metal Oxide) | 60 V | 650mA (Ta) | 2.5V, 10V | 2V @ 10µA | - | 47 pF @ 30 V | ±20V | - | 200mW (Ta) | 680mOhm @ 650mA, 10V | 150°C (TJ) | Surface Mount | SST3 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET N-CH 800V 7A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 1.6Ohm @ 3.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock14,802 |
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MOSFET (Metal Oxide) | 800 V | 7A (Tc) | 10V | 5V @ 1mA | 28 nC @ 10 V | 850 pF @ 25 V | ±30V | - | 140W (Tc) | 1.6Ohm @ 3.5A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 600V 4A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock13,605 |
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MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 10V | 4.5V @ 1mA | 11 nC @ 10 V | 280 pF @ 25 V | ±25V | - | 65W (Tc) | 1.8Ohm @ 2A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
NCH 150V 50A, TO-220AB, POWER MO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 75 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 89W (Tc)
- Rds On (Max) @ Id, Vgs: 29mOhm @ 25A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Stock2,835 |
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MOSFET (Metal Oxide) | 150 V | 50A (Tc) | 6V, 10V | 4V @ 1mA | 37 nC @ 10 V | 2150 pF @ 75 V | ±20V | - | 89W (Tc) | 29mOhm @ 25A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 30V 4.5A TSMT6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 950mW (Ta)
- Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT6 (SC-95)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: - |
Stock33,195 |
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MOSFET (Metal Oxide) | 30 V | 4.5A (Ta) | 2.5V, 4.5V | 1.5V @ 1mA | 10.7 nC @ 4.5 V | 540 pF @ 10 V | ±12V | - | 950mW (Ta) | 43mOhm @ 4.5A, 4.5V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET P-CH 60V 1.5A TSMT3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 280mOhm @ 1.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT3
- Package / Case: SC-96
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Package: - |
Stock9,000 |
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MOSFET (Metal Oxide) | 60 V | 1.5A (Ta) | 4V, 10V | 3V @ 1mA | 10 nC @ 10 V | 500 pF @ 10 V | ±20V | - | 700mW (Ta) | 280mOhm @ 1.5A, 10V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET N-CH 600V 6A TO220FM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 7V @ 800µA
- Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 43W (Tc)
- Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock2,622 |
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MOSFET (Metal Oxide) | 600 V | 6A (Tc) | 15V | 7V @ 800µA | 15.5 nC @ 15 V | 410 pF @ 100 V | ±30V | - | 43W (Tc) | 936mOhm @ 3A, 15V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 30V 2A TSMT6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 950mW (Ta)
- Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT6 (SC-95)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: - |
Stock3,690 |
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MOSFET (Metal Oxide) | 30 V | 2A (Ta) | 4V, 10V | 2.5V @ 1mA | 3.1 nC @ 5 V | 110 pF @ 10 V | ±20V | - | 950mW (Ta) | 134mOhm @ 2A, 10V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET P-CH 30V 4.5A TSMT6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 950mW (Ta)
- Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT6 (SC-95)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 4.5A (Ta) | 4V, 10V | 2.5V @ 1mA | 14 nC @ 5 V | 1350 pF @ 10 V | ±20V | - | 950mW (Ta) | 35mOhm @ 4.5A, 10V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
750V, 56A, 3-PIN THD, TRENCH-STR
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 750 V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
- Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
- Vgs (Max): +21V, -4V
- FET Feature: -
- Power Dissipation (Max): 176W
- Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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Package: - |
Stock1,440 |
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SiCFET (Silicon Carbide) | 750 V | 56A (Tc) | 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | 2320 pF @ 500 V | +21V, -4V | - | 176W | 34mOhm @ 29A, 18V | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 250V 33A LPTS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 211W (Tc)
- Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock243 |
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MOSFET (Metal Oxide) | 250 V | 33A (Tc) | 10V | 5V @ 1mA | 80 nC @ 10 V | 4500 pF @ 25 V | ±30V | - | 211W (Tc) | 105mOhm @ 16.5A, 10V | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
650V 35A, TO-220AB, HIGH-SPEED S
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1.3mA
- Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 370W (Tc)
- Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 5V @ 1.3mA | 72 nC @ 10 V | 3000 pF @ 25 V | ±20V | - | 370W (Tc) | 115mOhm @ 18.1A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 40V 60A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock7,398 |
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MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 46.5 nC @ 10 V | 3400 pF @ 20 V | ±20V | - | 40W (Tc) | 3.6mOhm @ 60A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
PCH -40V -16A POWER MOSFET - RS3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Rds On (Max) @ Id, Vgs: 6.2mOhm @ 16A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Stock20,724 |
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MOSFET (Metal Oxide) | 40 V | 16A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 120 nC @ 10 V | 6250 pF @ 20 V | ±20V | - | 1.4W (Ta) | 6.2mOhm @ 16A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |