Page 24 - Rohm Semiconductor Products - Transistors - FETs, MOSFETs - Single

SCT3030ALGC11
Rohm Semiconductor

MOSFET NCH 650V 70A TO247N

Package: TO-247-3

Stock24,444
SCT2080KEC
Rohm Semiconductor

MOSFET N-CH 1200V 40A TO-247

Package: TO-247-3

Stock26,964
SCT3060ALGC11
Rohm Semiconductor

MOSFET NCH 650V 39A TO247N

Package: TO-247-3

Stock13,860
SCT2120AFC
Rohm Semiconductor

MOSFET N-CH 650V 29A TO-220AB

Package: TO-220-3

Stock17,088
SCT2H12NZGC11
Rohm Semiconductor

MOSFET N-CH 1700V 3.7A

Package: TO-3PFM, SC-93-3

Stock22,524
SCT2450KEC
Rohm Semiconductor

MOSFET N-CH 1200V 10A TO-247

Package: TO-247-3

Stock20,796
RJP020N06T100
Rohm Semiconductor

MOSFET N-CH 60V 2A SOT-89

Package: TO-243AA

Stock275,112
RSQ015P10TR
Rohm Semiconductor

MOSFET P-CH 100V 1.5A TSMT6

Package: SOT-23-6 Thin, TSOT-23-6

Stock73,560
2SK3065T100
Rohm Semiconductor

MOSFET N-CH 60V 2A SOT-89

Package: TO-243AA

Stock2,296,920
RTR025N03TL
Rohm Semiconductor

MOSFET N-CH 30V 2.5A TSMT3

Package: SC-96

Stock2,007,852
RUF015N02TL
Rohm Semiconductor

MOSFET N-CH 20V 1.5A TUMT3

Package: 3-SMD, Flat Leads

Stock167,280
RTR040N03TL
Rohm Semiconductor

MOSFET N-CH 30V 4A TSMT3

Package: SC-96

Stock1,498,452
RSU002P03T106
Rohm Semiconductor

MOSFET P-CH 30V 0.25A SOT-323

Package: SC-70, SOT-323

Stock481,224
RUM003N02T2L
Rohm Semiconductor

MOSFET N-CH 20V 300MA VMT3

Package: SOT-723

Stock4,967,664
2SK3541T2L
Rohm Semiconductor

MOSFET N-CH 30V .1A VMT3

Package: SOT-723

Stock4,569,240
2SK3018T106
Rohm Semiconductor

MOSFET N-CH 30V .1A SOT-323

Package: SC-70, SOT-323

Stock17,036,316
2SK3019TL
Rohm Semiconductor

MOSFET N-CH 30V .1A SOT416

Package: SC-75, SOT-416

Stock5,418,120
RUM001L02T2CL
Rohm Semiconductor

MOSFET N-CH 20V 0.1A VMT3

Package: SOT-723

Stock1,932,720
RK7002BT116
Rohm Semiconductor

MOSFET N-CH 60V 0.25A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock1,046,388
RZM001P02T2L
Rohm Semiconductor

MOSFET P-CH 20V 0.1A VMT3

Package: SOT-723

Stock7,072

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SCT3030ALGC11	Rohm Semiconductor	MOSFET NCH 650V 70A TO247N FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Gate Charge (Qg) (Max) @ Vgs: 104nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 1526pF @ 500V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 262W (Tc) Rds On (Max) @ Id, Vgs: 39 mOhm @ 27A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	Package: TO-247-3	Stock24,444	SiCFET (Silicon Carbide)	650V	70A (Tc)	18V	5.6V @ 13.3mA	104nC @ 18V	1526pF @ 500V	+22V, -4V	-	262W (Tc)	39 mOhm @ 27A, 18V	175°C (TJ)	Through Hole	TO-247N	TO-247-3
SCT2080KEC	Rohm Semiconductor	MOSFET N-CH 1200V 40A TO-247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4V @ 4.4mA Gate Charge (Qg) (Max) @ Vgs: 106nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 800V Vgs (Max): +22V, -6V FET Feature: - Power Dissipation (Max): 262W (Tc) Rds On (Max) @ Id, Vgs: 117 mOhm @ 10A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock26,964	SiCFET (Silicon Carbide)	1200V	40A (Tc)	18V	4V @ 4.4mA	106nC @ 18V	2080pF @ 800V	+22V, -6V	-	262W (Tc)	117 mOhm @ 10A, 18V	175°C (TJ)	Through Hole	TO-247	TO-247-3
SCT3060ALGC11	Rohm Semiconductor	MOSFET NCH 650V 39A TO247N FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.6V @ 6.67mA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 852pF @ 500V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 78 mOhm @ 13A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	Package: TO-247-3	Stock13,860	SiCFET (Silicon Carbide)	650V	39A (Tc)	18V	5.6V @ 6.67mA	58nC @ 18V	852pF @ 500V	+22V, -4V	-	165W (Tc)	78 mOhm @ 13A, 18V	175°C (TJ)	Through Hole	TO-247N	TO-247-3
SCT2120AFC	Rohm Semiconductor	MOSFET N-CH 650V 29A TO-220AB FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4V @ 3.3mA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 500V Vgs (Max): +22V, -6V FET Feature: - Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 156 mOhm @ 10A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock17,088	SiCFET (Silicon Carbide)	650V	29A (Tc)	18V	4V @ 3.3mA	61nC @ 18V	1200pF @ 500V	+22V, -6V	-	165W (Tc)	156 mOhm @ 10A, 18V	175°C (TJ)	Through Hole	TO-220AB	TO-220-3
SCT2H12NZGC11	Rohm Semiconductor	MOSFET N-CH 1700V 3.7A FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4V @ 900µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 800V Vgs (Max): +22V, -6V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.1A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PFM Package / Case: TO-3PFM, SC-93-3	Package: TO-3PFM, SC-93-3	Stock22,524	SiCFET (Silicon Carbide)	1700V	3.7A (Tc)	18V	4V @ 900µA	14nC @ 18V	184pF @ 800V	+22V, -6V	-	35W (Tc)	1.5 Ohm @ 1.1A, 18V	175°C (TJ)	Through Hole	TO-3PFM	TO-3PFM, SC-93-3
SCT2450KEC	Rohm Semiconductor	MOSFET N-CH 1200V 10A TO-247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4V @ 900µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 463pF @ 800V Vgs (Max): +22V, -6V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 585 mOhm @ 3A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock20,796	SiCFET (Silicon Carbide)	1200V	10A (Tc)	18V	4V @ 900µA	27nC @ 18V	463pF @ 800V	+22V, -6V	-	85W (Tc)	585 mOhm @ 3A, 18V	175°C (TJ)	Through Hole	TO-247	TO-247-3
RJP020N06T100	Rohm Semiconductor	MOSFET N-CH 60V 2A SOT-89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 240 mOhm @ 2A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MPT3 Package / Case: TO-243AA	Package: TO-243AA	Stock275,112	MOSFET (Metal Oxide)	60V	2A (Ta)	2.5V, 4.5V	1.5V @ 1mA	10nC @ 4V	160pF @ 10V	±12V	-	500mW (Ta)	240 mOhm @ 2A, 4.5V	150°C (TJ)	Surface Mount	MPT3	TO-243AA
RSQ015P10TR	Rohm Semiconductor	MOSFET P-CH 100V 1.5A TSMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 470 mOhm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock73,560	MOSFET (Metal Oxide)	100V	1.5A (Ta)	4V, 10V	2.5V @ 1mA	17nC @ 5V	950pF @ 25V	±20V	-	600mW (Ta)	470 mOhm @ 1.5A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
2SK3065T100	Rohm Semiconductor	MOSFET N-CH 60V 2A SOT-89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 320 mOhm @ 1A, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MPT3 Package / Case: TO-243AA	Package: TO-243AA	Stock2,296,920	MOSFET (Metal Oxide)	60V	2A (Ta)	2.5V, 4V	1.5V @ 1mA	-	160pF @ 10V	±20V	-	500mW (Ta)	320 mOhm @ 1A, 4V	150°C (TJ)	Surface Mount	MPT3	TO-243AA
RTR025N03TL	Rohm Semiconductor	MOSFET N-CH 30V 2.5A TSMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 10V Vgs (Max): 12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 92 mOhm @ 2.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock2,007,852	MOSFET (Metal Oxide)	30V	2.5A (Ta)	2.5V, 4.5V	1.5V @ 1mA	4.6nC @ 4.5V	220pF @ 10V	12V	-	1W (Ta)	92 mOhm @ 2.5A, 4.5V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RUF015N02TL	Rohm Semiconductor	MOSFET N-CH 20V 1.5A TUMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock167,280	MOSFET (Metal Oxide)	20V	1.5A (Ta)	1.8V, 4.5V	1V @ 1mA	2.5nC @ 4.5V	110pF @ 10V	±10V	-	800mW (Ta)	180 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	TUMT3	3-SMD, Flat Leads
RTR040N03TL	Rohm Semiconductor	MOSFET N-CH 30V 4A TSMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 48 mOhm @ 4A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock1,498,452	MOSFET (Metal Oxide)	30V	4A (Ta)	2.5V, 4.5V	1.5V @ 1mA	8.3nC @ 4.5V	475pF @ 10V	±12V	-	1W (Ta)	48 mOhm @ 4A, 4.5V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RSU002P03T106	Rohm Semiconductor	MOSFET P-CH 30V 0.25A SOT-323 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 250mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UMT3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock481,224	MOSFET (Metal Oxide)	30V	250mA (Ta)	4V, 10V	2.5V @ 1mA	-	30pF @ 10V	±20V	-	200mW (Ta)	1.4 Ohm @ 250mA, 10V	150°C (TJ)	Surface Mount	UMT3	SC-70, SOT-323
RUM003N02T2L	Rohm Semiconductor	MOSFET N-CH 20V 300MA VMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VMT3 Package / Case: SOT-723	Package: SOT-723	Stock4,967,664	MOSFET (Metal Oxide)	20V	300mA (Ta)	1.8V, 4V	1V @ 1mA	-	25pF @ 10V	±8V	-	150mW (Ta)	1 Ohm @ 300mA, 4V	150°C (TJ)	Surface Mount	VMT3	SOT-723
2SK3541T2L	Rohm Semiconductor	MOSFET N-CH 30V .1A VMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VMT3 Package / Case: SOT-723	Package: SOT-723	Stock4,569,240	MOSFET (Metal Oxide)	30V	100mA (Ta)	2.5V, 4V	1.5V @ 100µA	-	13pF @ 5V	±20V	-	150mW (Ta)	8 Ohm @ 10mA, 4V	150°C (TJ)	Surface Mount	VMT3	SOT-723
2SK3018T106	Rohm Semiconductor	MOSFET N-CH 30V .1A SOT-323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UMT3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock17,036,316	MOSFET (Metal Oxide)	30V	100mA (Ta)	2.5V, 4V	1.5V @ 100µA	-	13pF @ 5V	±20V	-	200mW (Ta)	8 Ohm @ 10mA, 4V	150°C (TJ)	Surface Mount	UMT3	SC-70, SOT-323
2SK3019TL	Rohm Semiconductor	MOSFET N-CH 30V .1A SOT416 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: EMT3 Package / Case: SC-75, SOT-416	Package: SC-75, SOT-416	Stock5,418,120	MOSFET (Metal Oxide)	30V	100mA (Ta)	2.5V, 4V	1.5V @ 100µA	-	13pF @ 5V	±20V	-	150mW (Ta)	8 Ohm @ 10mA, 4V	150°C (TJ)	Surface Mount	EMT3	SC-75, SOT-416
RUM001L02T2CL	Rohm Semiconductor	MOSFET N-CH 20V 0.1A VMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 7.1pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VMT3 Package / Case: SOT-723	Package: SOT-723	Stock1,932,720	MOSFET (Metal Oxide)	20V	100mA (Ta)	1.2V, 4.5V	1V @ 100µA	-	7.1pF @ 10V	±8V	-	150mW (Ta)	3.5 Ohm @ 100mA, 4.5V	150°C (TJ)	Surface Mount	VMT3	SOT-723
RK7002BT116	Rohm Semiconductor	MOSFET N-CH 60V 0.25A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SST3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,046,388	MOSFET (Metal Oxide)	60V	250mA (Ta)	2.5V, 10V	2.3V @ 1mA	-	15pF @ 25V	±20V	-	200mW (Ta)	2.4 Ohm @ 250mA, 10V	150°C (TJ)	Surface Mount	SST3	TO-236-3, SC-59, SOT-23-3
RZM001P02T2L	Rohm Semiconductor	MOSFET P-CH 20V 0.1A VMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 100mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VMT3 Package / Case: SOT-723	Package: SOT-723	Stock7,072	MOSFET (Metal Oxide)	20V	100mA (Ta)	1.2V, 4.5V	1V @ 100µA	-	15pF @ 10V	±10V	-	150mW (Ta)	3.8 Ohm @ 100mA, 4.5V	150°C (TJ)	Surface Mount	VMT3	SOT-723
RRS075P03FRATB	Rohm Semiconductor	MOSFET P-CH 30V 7.5A 8SOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	7.5A (Ta)	4V, 10V	2.5V @ 1mA	21 nC @ 5 V	1900 pF @ 10 V	±20V	-	2W (Ta)	21mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
BSS138BKWT106	Rohm Semiconductor	NCH 60V 380MA, SOT-323, SMALL SI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 2V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 680mOhm @ 380mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Stock24,930	MOSFET (Metal Oxide)	60 V	380mA (Ta)	2.5V, 10V	2V @ 10µA	-	47 pF @ 30 V	±20V	-	200mW (Ta)	680mOhm @ 380mA, 10V	150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
R6520KNZC17	Rohm Semiconductor	MOSFET N-CH 650V 20A TO3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 630µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: -	Stock900	MOSFET (Metal Oxide)	650 V	20A (Tc)	10V	5V @ 630µA	40 nC @ 10 V	1550 pF @ 25 V	±20V	-	68W (Tc)	205mOhm @ 9.5A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
R6009END3TL1	Rohm Semiconductor	MOSFET N-CH 600V 9A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock15,048	MOSFET (Metal Oxide)	600 V	9A (Tc)	10V	4V @ 1mA	23 nC @ 10 V	430 pF @ 25 V	±20V	-	94W (Tc)	535mOhm @ 2.8A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
R6011KND3TL1	Rohm Semiconductor	MOSFET N-CH 600V 11A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 124W (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,410	MOSFET (Metal Oxide)	600 V	11A (Tc)	10V	5V @ 1mA	22 nC @ 10 V	740 pF @ 25 V	±20V	-	124W (Tc)	390mOhm @ 3.8A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
RQ6E060ATTCR	Rohm Semiconductor	MOSFET P-CH 30V 6A TSMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 26.4mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Stock11,328	MOSFET (Metal Oxide)	30 V	6A (Ta)	4.5V, 10V	2.5V @ 1mA	25.9 nC @ 10 V	1200 pF @ 15 V	±20V	-	950mW (Ta)	26.4mOhm @ 6A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
R6013VNXC7G	Rohm Semiconductor	600V 8A TO-220FM, PRESTOMOS WITH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs(th) (Max) @ Id: 6.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 54W (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 15V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Package: -	Stock3,240	MOSFET (Metal Oxide)	600 V	8A (Tc)	10V, 15V	6.5V @ 500µA	21 nC @ 10 V	900 pF @ 100 V	±30V	-	54W (Tc)	300mOhm @ 3A, 15V	150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
RQ1E075XNTCR	Rohm Semiconductor	MOSFET N-CH 30V 7.5A TSMT8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT8 Package / Case: 8-SMD, Flat Lead	Package: -	Stock80,574	MOSFET (Metal Oxide)	30 V	7.5A (Ta)	4V, 10V	2.5V @ 1mA	6.8 nC @ 5 V	440 pF @ 10 V	±20V	-	1.1W (Ta)	17mOhm @ 7.5A, 10V	150°C (TJ)	Surface Mount	TSMT8	8-SMD, Flat Lead