Page 25 - Rohm Semiconductor Products - Transistors - FETs, MOSFETs - Single

RRH140P03TB1
Rohm Semiconductor

MOSFET P-CH 30V 14A SOP8

Package: 8-SOIC (0.154", 3.90mm Width)

Stock10,716
RSD160P05TL
Rohm Semiconductor

MOSFET P-CH 45V 16A CPT3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock14,568
RHP020N06T100
Rohm Semiconductor

MOSFET N-CH 60V 2A SOT-89

Package: TO-243AA

Stock404,676
RTQ045N03TR
Rohm Semiconductor

MOSFET N-CH 30V 4.5A TSMT6

Package: SOT-23-6 Thin, TSOT-23-6

Stock2,417,496
RQ3E120ATTB
Rohm Semiconductor

MOSFET P-CH 30V 12A HSMT8

Package: 8-PowerVDFN

Stock28,284
RTR020P02TL
Rohm Semiconductor

MOSFET P-CH 20V 2A TSMT3

Package: SC-96

Stock301,620
RTR030P02TL
Rohm Semiconductor

MOSFET P-CH 20V 3A TSMT3

Package: SC-96

Stock2,122,752
RRR015P03TL
Rohm Semiconductor

MOSFET P-CH 30V 1.5A TSMT3

Package: SC-96

Stock983,412
RTM002P02T2L
Rohm Semiconductor

MOSFET P-CH 20V 0.2A VMT3

Package: SOT-723

Stock885,816
RUF020N02TL
Rohm Semiconductor

MOSFET N-CH 20V 2A TUMT3

Package: 3-SMD, Flat Leads

Stock72,000
RJU002N06T106
Rohm Semiconductor

MOSFET N-CH 60V 200MA SOT-323

Package: SC-70, SOT-323

Stock1,575,444
RUE003N02TL
Rohm Semiconductor

MOSFET N-CH 20V 300MA EMT3

Package: SC-75, SOT-416

Stock1,504,116
RZE002P02TL
Rohm Semiconductor

MOSFET P-CH 20V 0.2A EMT3

Package: SC-75, SOT-416

Stock3,873,168
RJU003N03T106
Rohm Semiconductor

MOSFET N-CH 30V 300MA SOT-323

Package: SC-70, SOT-323

Stock1,508,232
RUE002N02TL
Rohm Semiconductor

MOSFET N-CH 20V .2A EMT3

Package: SC-75, SOT-416

Stock324,000
RYM002N05T2CL
Rohm Semiconductor

MOSFET N-CH 50V 0.2A VMT3

Package: SOT-723

Stock171,360
RSE002N06TL
Rohm Semiconductor

MOSFET N-CH 60V 0.25A EMT3

Package: SC-75, SOT-416

Stock36,000
RHU002N06T106
Rohm Semiconductor

MOSFET N-CH 60V 200MA SOT-323

Package: SC-70, SOT-323

Stock1,231,968
RUM002N02T2L
Rohm Semiconductor

MOSFET N-CH 20V 0.2A VMT3

Package: SOT-723

Stock1,493,088
RV1C001ZPT2L
Rohm Semiconductor

MOSFET P-CH 20V 0.1A VML0806

Package: 3-SMD, No Lead

Stock96,000

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
RRH140P03TB1	Rohm Semiconductor	MOSFET P-CH 30V 14A SOP8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 650mW (Ta) Rds On (Max) @ Id, Vgs: 7 mOhm @ 14A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock10,716	MOSFET (Metal Oxide)	30V	14A (Ta)	4V, 10V	2.5V @ 1mA	80nC @ 5V	8000pF @ 10V	±20V	-	650mW (Ta)	7 mOhm @ 14A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RSD160P05TL	Rohm Semiconductor	MOSFET P-CH 45V 16A CPT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 16A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock14,568	MOSFET (Metal Oxide)	45V	16A (Ta)	4V, 10V	3V @ 1mA	16nC @ 5V	2000pF @ 10V	±20V	-	20W (Tc)	50 mOhm @ 16A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
RHP020N06T100	Rohm Semiconductor	MOSFET N-CH 60V 2A SOT-89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 200 mOhm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MPT3 Package / Case: TO-243AA	Package: TO-243AA	Stock404,676	MOSFET (Metal Oxide)	60V	2A (Ta)	4V, 10V	2.5V @ 1mA	14nC @ 10V	140pF @ 10V	±20V	-	500mW (Ta)	200 mOhm @ 2A, 10V	150°C (TJ)	Surface Mount	MPT3	TO-243AA
RTQ045N03TR	Rohm Semiconductor	MOSFET N-CH 30V 4.5A TSMT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V Vgs (Max): 12V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 43 mOhm @ 4.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock2,417,496	MOSFET (Metal Oxide)	30V	4.5A (Ta)	2.5V, 4.5V	1.5V @ 1mA	10.7nC @ 4.5V	540pF @ 10V	12V	-	1.25W (Ta)	43 mOhm @ 4.5A, 4.5V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
RQ3E120ATTB	Rohm Semiconductor	MOSFET P-CH 30V 12A HSMT8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 12A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock28,284	MOSFET (Metal Oxide)	30V	12A (Ta)	4.5V, 10V	2.5V @ 1mA	62nC @ 10V	3200pF @ 15V	±20V	-	2W (Ta)	8 mOhm @ 12A, 10V	150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN
RTR020P02TL	Rohm Semiconductor	MOSFET P-CH 20V 2A TSMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 135 mOhm @ 2A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock301,620	MOSFET (Metal Oxide)	20V	2A (Ta)	2.5V, 4.5V	2V @ 1mA	4.9nC @ 4.5V	430pF @ 10V	±12V	-	1W (Ta)	135 mOhm @ 2A, 4.5V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RTR030P02TL	Rohm Semiconductor	MOSFET P-CH 20V 3A TSMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 75 mOhm @ 3A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock2,122,752	MOSFET (Metal Oxide)	20V	3A (Ta)	2.5V, 4.5V	2V @ 1mA	9.3nC @ 4.5V	840pF @ 10V	±12V	-	1W (Ta)	75 mOhm @ 3A, 4.5V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RRR015P03TL	Rohm Semiconductor	MOSFET P-CH 30V 1.5A TSMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 540mW (Ta) Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock983,412	MOSFET (Metal Oxide)	30V	1.5A (Ta)	4V, 10V	2.5V @ 1mA	6.5nC @ 10V	230pF @ 10V	±20V	-	540mW (Ta)	160 mOhm @ 1.5A, 10V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RTM002P02T2L	Rohm Semiconductor	MOSFET P-CH 20V 0.2A VMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 200mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VMT3 Package / Case: SOT-723	Package: SOT-723	Stock885,816	MOSFET (Metal Oxide)	20V	200mA (Ta)	2.5V, 4.5V	2V @ 1mA	-	50pF @ 10V	±12V	-	150mW (Ta)	1.5 Ohm @ 200mA, 4.5V	150°C (TJ)	Surface Mount	VMT3	SOT-723
RUF020N02TL	Rohm Semiconductor	MOSFET N-CH 20V 2A TUMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 320mW (Ta) Rds On (Max) @ Id, Vgs: 105 mOhm @ 2A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock72,000	MOSFET (Metal Oxide)	20V	2A (Ta)	1.5V, 4.5V	1V @ 1mA	2nC @ 4.5V	180pF @ 10V	±10V	-	320mW (Ta)	105 mOhm @ 2A, 4.5V	150°C (TJ)	Surface Mount	TUMT3	3-SMD, Flat Leads
RJU002N06T106	Rohm Semiconductor	MOSFET N-CH 60V 200MA SOT-323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 2.3 Ohm @ 200mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UMT3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock1,575,444	MOSFET (Metal Oxide)	60V	200mA (Ta)	2.5V, 4.5V	1.5V @ 1mA	-	18pF @ 10V	±12V	-	200mW (Ta)	2.3 Ohm @ 200mA, 4.5V	150°C (TJ)	Surface Mount	UMT3	SC-70, SOT-323
RUE003N02TL	Rohm Semiconductor	MOSFET N-CH 20V 300MA EMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: EMT3 Package / Case: SC-75, SOT-416	Package: SC-75, SOT-416	Stock1,504,116	MOSFET (Metal Oxide)	20V	300mA (Ta)	1.8V, 4V	1V @ 1mA	-	25pF @ 10V	±8V	-	150mW (Ta)	1 Ohm @ 300mA, 4V	150°C (TJ)	Surface Mount	EMT3	SC-75, SOT-416
RZE002P02TL	Rohm Semiconductor	MOSFET P-CH 20V 0.2A EMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: EMT3 Package / Case: SC-75, SOT-416	Package: SC-75, SOT-416	Stock3,873,168	MOSFET (Metal Oxide)	20V	200mA (Ta)	1.2V, 4.5V	1V @ 100µA	1.4nC @ 4.5V	115pF @ 10V	±10V	-	150mW (Ta)	1.2 Ohm @ 200mA, 4.5V	150°C (TJ)	Surface Mount	EMT3	SC-75, SOT-416
RJU003N03T106	Rohm Semiconductor	MOSFET N-CH 30V 300MA SOT-323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 24pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 300mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UMT3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock1,508,232	MOSFET (Metal Oxide)	30V	300mA (Ta)	2.5V, 4.5V	1.5V @ 1mA	-	24pF @ 10V	±12V	-	200mW (Ta)	1.1 Ohm @ 300mA, 4.5V	150°C (TJ)	Surface Mount	UMT3	SC-70, SOT-323
RUE002N02TL	Rohm Semiconductor	MOSFET N-CH 20V .2A EMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 2.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: EMT3 Package / Case: SC-75, SOT-416	Package: SC-75, SOT-416	Stock324,000	MOSFET (Metal Oxide)	20V	200mA (Ta)	1.2V, 2.5V	1V @ 1mA	-	25pF @ 10V	±8V	-	150mW (Ta)	1.2 Ohm @ 200mA, 2.5V	150°C (TJ)	Surface Mount	EMT3	SC-75, SOT-416
RYM002N05T2CL	Rohm Semiconductor	MOSFET N-CH 50V 0.2A VMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V Vgs(th) (Max) @ Id: 800mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VMT3 Package / Case: SOT-723	Package: SOT-723	Stock171,360	MOSFET (Metal Oxide)	50V	200mA (Ta)	0.9V, 4.5V	800mV @ 1mA	-	26pF @ 10V	±8V	-	150mW (Ta)	2.2 Ohm @ 200mA, 4.5V	150°C (TJ)	Surface Mount	VMT3	SOT-723
RSE002N06TL	Rohm Semiconductor	MOSFET N-CH 60V 0.25A EMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: EMT3 Package / Case: SC-75, SOT-416	Package: SC-75, SOT-416	Stock36,000	MOSFET (Metal Oxide)	60V	250mA (Ta)	2.5V, 10V	2.3V @ 1mA	-	15pF @ 25V	±20V	-	150mW (Ta)	2.4 Ohm @ 250mA, 10V	150°C (TJ)	Surface Mount	EMT3	SC-75, SOT-416
RHU002N06T106	Rohm Semiconductor	MOSFET N-CH 60V 200MA SOT-323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 200mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UMT3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock1,231,968	MOSFET (Metal Oxide)	60V	200mA (Ta)	4V, 10V	-	4.4nC @ 10V	15pF @ 10V	±20V	-	200mW (Ta)	2.4 Ohm @ 200mA, 10V	150°C (TJ)	Surface Mount	UMT3	SC-70, SOT-323
RUM002N02T2L	Rohm Semiconductor	MOSFET N-CH 20V 0.2A VMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 2.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VMT3 Package / Case: SOT-723	Package: SOT-723	Stock1,493,088	MOSFET (Metal Oxide)	20V	200mA (Ta)	1.2V, 2.5V	1V @ 1mA	-	25pF @ 10V	±8V	-	150mW (Ta)	1.2 Ohm @ 200mA, 2.5V	150°C (TJ)	Surface Mount	VMT3	SOT-723
RV1C001ZPT2L	Rohm Semiconductor	MOSFET P-CH 20V 0.1A VML0806 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 100mW (Ta) Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 100mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VML0806 Package / Case: 3-SMD, No Lead	Package: 3-SMD, No Lead	Stock96,000	MOSFET (Metal Oxide)	20V	100mA (Ta)	1.2V, 4.5V	1V @ 100µA	-	15pF @ 10V	±10V	-	100mW (Ta)	3.8 Ohm @ 100mA, 4.5V	150°C (TJ)	Surface Mount	VML0806	3-SMD, No Lead
RSC002P03T316	Rohm Semiconductor	MOSFET P-CH 30V 0.25A SST3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 250mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SST3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock456,372	MOSFET (Metal Oxide)	30V	250mA (Ta)	4V, 10V	2.5V @ 1mA	-	30pF @ 10V	±20V	-	200mW (Ta)	1.4 Ohm @ 250mA, 10V	150°C (TJ)	Surface Mount	SST3	TO-236-3, SC-59, SOT-23-3
RUC002N05T116	Rohm Semiconductor	MOSFET N-CH 50V 0.2A SST3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SST3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,218,000	MOSFET (Metal Oxide)	50V	200mA (Ta)	1.2V, 4.5V	1V @ 1mA	-	25pF @ 10V	±8V	-	200mW (Ta)	2.2 Ohm @ 200mA, 4.5V	150°C (TJ)	Surface Mount	SST3	TO-236-3, SC-59, SOT-23-3
RYE002N05TCL	Rohm Semiconductor	MOSFET N-CH 50V 0.2A EMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V Vgs(th) (Max) @ Id: 800mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: EMT3 Package / Case: SC-75, SOT-416	Package: SC-75, SOT-416	Stock2,160,000	MOSFET (Metal Oxide)	50V	200mA (Ta)	0.9V, 4.5V	800mV @ 1mA	-	26pF @ 10V	±8V	-	150mW (Ta)	2.2 Ohm @ 200mA, 4.5V	150°C (TJ)	Surface Mount	EMT3	SC-75, SOT-416
RK7002BMT116	Rohm Semiconductor	MOSFET N-CH 60V 0.25A SST3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SST3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,684,536	MOSFET (Metal Oxide)	60V	250mA (Ta)	2.5V, 10V	2.3V @ 1mA	-	15pF @ 25V	±20V	-	200mW (Ta)	2.4 Ohm @ 250mA, 10V	150°C (TJ)	Surface Mount	SST3	TO-236-3, SC-59, SOT-23-3
SCT3030KLGC11	Rohm Semiconductor	MOSFET NCH 1.2KV 72A TO247N FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Gate Charge (Qg) (Max) @ Vgs: 131nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 2222pF @ 800V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 339W (Tc) Rds On (Max) @ Id, Vgs: 39 mOhm @ 27A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	Package: TO-247-3	Stock15,876	SiCFET (Silicon Carbide)	1200V	72A (Tc)	18V	5.6V @ 13.3mA	131nC @ 18V	2222pF @ 800V	+22V, -4V	-	339W (Tc)	39 mOhm @ 27A, 18V	175°C (TJ)	Through Hole	TO-247N	TO-247-3
SCT3022ALGC11	Rohm Semiconductor	MOSFET NCH 650V 93A TO247N FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 93A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.6V @ 18.2mA Gate Charge (Qg) (Max) @ Vgs: 133nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 2208pF @ 500V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 339W (Tc) Rds On (Max) @ Id, Vgs: 28.6 mOhm @ 36A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	Package: TO-247-3	Stock14,586	SiCFET (Silicon Carbide)	650V	93A (Tc)	18V	5.6V @ 18.2mA	133nC @ 18V	2208pF @ 500V	+22V, -4V	-	339W (Tc)	28.6 mOhm @ 36A, 18V	175°C (TJ)	Through Hole	TO-247N	TO-247-3
SCH2080KEC	Rohm Semiconductor	MOSFET N-CH 1200V 40A TO-247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4V @ 4.4mA Gate Charge (Qg) (Max) @ Vgs: 106nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 800V Vgs (Max): +22V, -6V FET Feature: - Power Dissipation (Max): 262W (Tc) Rds On (Max) @ Id, Vgs: 117 mOhm @ 10A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock22,500	SiCFET (Silicon Carbide)	1200V	40A (Tc)	18V	4V @ 4.4mA	106nC @ 18V	1850pF @ 800V	+22V, -6V	-	262W (Tc)	117 mOhm @ 10A, 18V	175°C (TJ)	Through Hole	TO-247	TO-247-3
SCT3040KLGC11	Rohm Semiconductor	MOSFET NCH 1.2KV 55A TO247N FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 1337pF @ 800V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 262W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 20A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	Package: TO-247-3	Stock16,116	SiCFET (Silicon Carbide)	1200V	55A (Tc)	18V	5.6V @ 10mA	107nC @ 18V	1337pF @ 800V	+22V, -4V	-	262W (Tc)	52 mOhm @ 20A, 18V	175°C (TJ)	Through Hole	TO-247N	TO-247-3