Page 33 - Rohm Semiconductor Products - Transistors - FETs, MOSFETs - Single

RCJ330N25TL
Rohm Semiconductor

MOSFET N-CH 250V 33A LPTS

Package: SC-83

Stock24,612
RCJ300N20TL
Rohm Semiconductor

MOSFET N-CH 200V 30A LPTS

Package: SC-83

Stock127,128
RRH140P03GZETB
Rohm Semiconductor

MOSFET P-CH 30V 14A 8SOP

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,896
RSJ400N06TL
Rohm Semiconductor

MOSFET N-CH 60V 40A LTPS

Package: SC-83

Stock13,152
RSJ450N04TL
Rohm Semiconductor

MOSFET N-CH 40V 45A LPTS

Package: SC-83

Stock42,600
RSS070P05FU6TB
Rohm Semiconductor

MOSFET P-CH 45V 7A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock289,488
RUS100N02TB
Rohm Semiconductor

MOSFET N-CH 20V 10A 8SOP

Package: 8-SOIC (0.154", 3.90mm Width)

Stock391,776
R5011FNJTL
Rohm Semiconductor

MOSFET N-CH 500V 11A LPT

Package: SC-83

Stock21,408
RS1G300GNTB
Rohm Semiconductor

MOSFET N-CH 40V 30A 8HSOP

Package: 8-PowerTDFN

Stock6,688
RSS095N05FU6TB
Rohm Semiconductor

MOSFET N-CH 45V 9.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,720
RS1G260MNTB
Rohm Semiconductor

MOSFET N-CH 40V 26A 8HSOP

Package: 8-PowerTDFN

Stock5,040
RDD050N20TL
Rohm Semiconductor

MOSFET N-CH 200V 5A CPT3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock29,520
RSD130P10TL
Rohm Semiconductor

MOSFET P-CH 100V 13A SOT428

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock10,296
RSS090P03TB
Rohm Semiconductor

MOSFET P-CH 30V 9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock525,732
RS1E350BNTB
Rohm Semiconductor

MOSFET N-CH 30V 35A 8HSOP

Package: 8-PowerTDFN

Stock7,024
RSS070N05FU6TB
Rohm Semiconductor

MOSFET N-CH 45V 7A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock145,728
RS1E320GNTB
Rohm Semiconductor

MOSFET N-CH 30V 32A 8-HSOP

Package: 8-PowerTDFN

Stock6,272
RQ3E150MNTB1
Rohm Semiconductor

MOSFET N-CH 30V 15A HSMT8

Package: 8-PowerVDFN

Stock3,504
RCD100N19TL
Rohm Semiconductor

MOSFET N-CH 190V 10A CPT3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,560
RSH065N06TB1
Rohm Semiconductor

MOSFET N-CH 60V 6.5A SOP8

Package: 8-SOIC (0.154", 3.90mm Width)

Stock15,180

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
RCJ330N25TL	Rohm Semiconductor	MOSFET N-CH 250V 33A LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 16.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock24,612	MOSFET (Metal Oxide)	250V	33A (Tc)	10V	5V @ 1mA	80nC @ 10V	4500pF @ 25V	±30V	-	1.56W (Ta), 40W (Tc)	105 mOhm @ 16.5A, 10V	150°C (TJ)	Surface Mount	LPTS	SC-83
RCJ300N20TL	Rohm Semiconductor	MOSFET N-CH 200V 30A LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock127,128	MOSFET (Metal Oxide)	200V	30A (Tc)	10V	5V @ 1mA	60nC @ 10V	3200pF @ 25V	±30V	-	1.56W (Ta), 40W (Tc)	80 mOhm @ 15A, 10V	150°C (TJ)	Surface Mount	LPTS	SC-83
RRH140P03GZETB	Rohm Semiconductor	MOSFET P-CH 30V 14A 8SOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 650mW (Ta) Rds On (Max) @ Id, Vgs: 7 mOhm @ 14A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,896	MOSFET (Metal Oxide)	30V	14A (Ta)	4V, 10V	2.5V @ 1mA	150nC @ 10V	8000pF @ 10V	±20V	-	650mW (Ta)	7 mOhm @ 14A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RSJ400N06TL	Rohm Semiconductor	MOSFET N-CH 60V 40A LTPS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 40A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock13,152	MOSFET (Metal Oxide)	60V	40A (Ta)	10V	3V @ 1mA	52nC @ 10V	2400pF @ 10V	±20V	-	50W (Tc)	16 mOhm @ 40A, 10V	150°C (TJ)	Surface Mount	LPTS	SC-83
RSJ450N04TL	Rohm Semiconductor	MOSFET N-CH 40V 45A LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 25A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock42,600	MOSFET (Metal Oxide)	40V	45A (Ta)	10V	3V @ 1mA	43nC @ 10V	2400pF @ 25V	±20V	-	50W (Tc)	13.5 mOhm @ 25A, 10V	150°C (TJ)	Surface Mount	LPTS	SC-83
RSS070P05FU6TB	Rohm Semiconductor	MOSFET P-CH 45V 7A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 47.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 27 mOhm @ 7A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock289,488	MOSFET (Metal Oxide)	45V	7A (Ta)	4V, 10V	-	47.6nC @ 5V	4100pF @ 10V	±20V	-	2W (Ta)	27 mOhm @ 7A, 10V	-	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RUS100N02TB	Rohm Semiconductor	MOSFET N-CH 20V 10A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 10A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock391,776	MOSFET (Metal Oxide)	20V	10A (Ta)	1.5V, 4.5V	1V @ 1mA	24nC @ 4.5V	2250pF @ 10V	±10V	-	2W (Ta)	12 mOhm @ 10A, 4.5V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
R5011FNJTL	Rohm Semiconductor	MOSFET N-CH 500V 11A LPT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 520 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock21,408	MOSFET (Metal Oxide)	500V	11A (Tc)	10V	4V @ 1mA	30nC @ 10V	950pF @ 25V	±30V	-	50W (Tc)	520 mOhm @ 5.5A, 10V	150°C (TJ)	Surface Mount	LPTS	SC-83
RS1G300GNTB	Rohm Semiconductor	MOSFET N-CH 40V 30A 8HSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 30A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,688	MOSFET (Metal Oxide)	40V	30A (Ta)	4.5V, 10V	2.5V @ 1mA	56.8nC @ 10V	4230pF @ 20V	±20V	-	3W (Ta), 35W (Tc)	2.5 mOhm @ 30A, 10V	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
RSS095N05FU6TB	Rohm Semiconductor	MOSFET N-CH 45V 9.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 10V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 16 mOhm @ 9.5A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,720	MOSFET (Metal Oxide)	45V	9.5A (Ta)	4V, 10V	-	26.5nC @ 5V	1830pF @ 10V	20V	-	2W (Ta)	16 mOhm @ 9.5A, 10V	-	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RS1G260MNTB	Rohm Semiconductor	MOSFET N-CH 40V 26A 8HSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 26A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2988pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 26A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,040	MOSFET (Metal Oxide)	40V	26A (Ta)	4.5V, 10V	2.5V @ 1mA	44nC @ 10V	2988pF @ 20V	±20V	-	3W (Ta), 35W (Tc)	3.3 mOhm @ 26A, 10V	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
RDD050N20TL	Rohm Semiconductor	MOSFET N-CH 200V 5A CPT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 292pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 720 mOhm @ 2.5A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock29,520	MOSFET (Metal Oxide)	200V	5A (Ta)	10V	4V @ 1mA	9.3nC @ 10V	292pF @ 10V	±30V	-	20W (Tc)	720 mOhm @ 2.5A, 10V	-	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
RSD130P10TL	Rohm Semiconductor	MOSFET P-CH 100V 13A SOT428 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Ta) Rds On (Max) @ Id, Vgs: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock10,296	MOSFET (Metal Oxide)	100V	13A (Ta)	4V, 10V	-	-	-	±20V	-	20W (Ta)	-	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
RSS090P03TB	Rohm Semiconductor	MOSFET P-CH 30V 9A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 14 mOhm @ 9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock525,732	MOSFET (Metal Oxide)	30V	9A (Ta)	4V, 10V	2.5V @ 1mA	39nC @ 5V	4000pF @ 10V	20V	-	2W (Ta)	14 mOhm @ 9A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RS1E350BNTB	Rohm Semiconductor	MOSFET N-CH 30V 35A 8HSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7900pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 35A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,024	MOSFET (Metal Oxide)	30V	35A	4.5V, 10V	2.5V @ 1mA	185nC @ 10V	7900pF @ 15V	±20V	-	3W (Ta), 35W (Tc)	1.7 mOhm @ 35A, 10V	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
RSS070N05FU6TB	Rohm Semiconductor	MOSFET N-CH 45V 7A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock145,728	MOSFET (Metal Oxide)	45V	7A (Ta)	4V, 10V	-	16.8nC @ 5V	1000pF @ 10V	20V	-	2W (Ta)	25 mOhm @ 7A, 10V	-	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RS1E320GNTB	Rohm Semiconductor	MOSFET N-CH 30V 32A 8-HSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 42.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 34.6W (Tc) Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 32A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,272	MOSFET (Metal Oxide)	30V	32A (Ta)	4.5V, 10V	2.5V @ 1mA	42.8nC @ 10V	2850pF @ 15V	±20V	-	3W (Ta), 34.6W (Tc)	1.9 mOhm @ 32A, 10V	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
RQ3E150MNTB1	Rohm Semiconductor	MOSFET N-CH 30V 15A HSMT8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock3,504	MOSFET (Metal Oxide)	30V	15A (Ta)	4.5V, 10V	2.5V @ 1mA	20nC @ 10V	1100pF @ 15V	±20V	-	2W (Ta)	6.7 mOhm @ 15A, 10V	150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN
RCD100N19TL	Rohm Semiconductor	MOSFET N-CH 190V 10A CPT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 190V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 850mW (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 182 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,560	MOSFET (Metal Oxide)	190V	10A (Tc)	4V, 10V	2.5V @ 1mA	52nC @ 10V	2000pF @ 25V	±20V	-	850mW (Ta), 20W (Tc)	182 mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
RSH065N06TB1	Rohm Semiconductor	MOSFET N-CH 60V 6.5A SOP8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 37 mOhm @ 6.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock15,180	MOSFET (Metal Oxide)	60V	6.5A (Ta)	4V, 10V	2.5V @ 1mA	16nC @ 5V	900pF @ 10V	20V	-	2W (Ta)	37 mOhm @ 6.5A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RCD075N19TL	Rohm Semiconductor	MOSFET N-CH 190V 7.5A CPT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 190V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 850mW (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 336 mOhm @ 3.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,032	MOSFET (Metal Oxide)	190V	7.5A (Tc)	4V, 10V	2.5V @ 1mA	30nC @ 10V	1100pF @ 25V	±30V	-	850mW (Ta), 20W (Tc)	336 mOhm @ 3.8A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
RMW180N03TB	Rohm Semiconductor	MOSFET N-CH 30V 18A 8PSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 18A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PSOP Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock15,888	MOSFET (Metal Oxide)	30V	18A (Ta)	4.5V, 10V	2.5V @ 1mA	24nC @ 10V	1250pF @ 15V	±20V	-	3W (Ta)	5.6 mOhm @ 18A, 10V	150°C (TJ)	Surface Mount	8-PSOP	8-SMD, Flat Lead
RQ3E075ATTB	Rohm Semiconductor	PCH -30V -18A MIDDLE POWER MOSFE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock4,624	MOSFET (Metal Oxide)	30V	18A (Tc)	10V	2.5V @ 1mA	10.4nC @ 4.5V	930pF @ 15V	±20V	-	15W (Tc)	23 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN
RSH070N05GZETB	Rohm Semiconductor	MOSFET N-CH 45V 7A SOP8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,816	MOSFET (Metal Oxide)	45V	7A (Ta)	4V, 10V	2.5V @ 1mA	16.8nC @ 5V	1000pF @ 10V	20V	-	2W (Ta)	25 mOhm @ 7A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RSH090N03TB1	Rohm Semiconductor	MOSFET N-CH 30V 9A SOP8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 16 mOhm @ 9A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock334,068	MOSFET (Metal Oxide)	30V	9A (Ta)	4V, 10V	2.5V @ 1mA	15nC @ 5V	810pF @ 10V	±20V	-	2W (Ta)	16 mOhm @ 9A, 10V	-	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RQ3C150BCTB	Rohm Semiconductor	PCH -20V -30A MIDDLE POWER MOSFE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 15A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock5,152	MOSFET (Metal Oxide)	20V	30A (Tc)	4.5V	1.2V @ 1mA	60nC @ 4.5V	4800pF @ 10V	±8V	-	20W (Tc)	6.7 mOhm @ 15A, 4.5V	150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN
RQ3E180AJTB	Rohm Semiconductor	MOSFET N-CH 30V 18A HSMR8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 11mA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 18A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock4,224	MOSFET (Metal Oxide)	30V	18A (Ta), 30A (Tc)	2.5V, 4.5V	1.5V @ 11mA	39nC @ 4.5V	4290pF @ 15V	±12V	-	2W (Ta), 30W (Tc)	4.5 mOhm @ 18A, 4.5V	150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN
RSD200N05TL	Rohm Semiconductor	MOSFET N-CH 45V 20A CPT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock27,600	MOSFET (Metal Oxide)	45V	20A (Ta)	4V, 10V	2.5V @ 1mA	12nC @ 5V	950pF @ 10V	±20V	-	20W (Tc)	28 mOhm @ 20A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63