Page 34 - Rohm Semiconductor Products - Transistors - FETs, MOSFETs - Single

R5011ANX
Rohm Semiconductor

MOSFET N-CH 500V 11A TO220

Package: TO-220-2 Full Pack

Stock10,056
R5007FNX
Rohm Semiconductor

MOSFET N-CH 500V 7A TO220

Package: TO-220-2 Full Pack

Stock9,864
RCX200N20
Rohm Semiconductor

MOSFET N-CH 200V 20A TO220

Package: TO-220-2 Full Pack

Stock8,976
RCX160N20
Rohm Semiconductor

MOSFET N-CH 200V 16A TO220

Package: TO-220-2 Full Pack

Stock24,360
ZDX080N50
Rohm Semiconductor

MOSFET N-CH 500V 8A TO220FM

Package: TO-220-2 Full Pack

Stock8,748
R5005CNX
Rohm Semiconductor

MOSFET N-CH 500V 5A TO220

Package: TO-220-2 Full Pack

Stock10,692
R5007ANX
Rohm Semiconductor

MOSFET N-CH 500V 7A TO220

Package: TO-220-2 Full Pack

Stock138,384
RCX080N25
Rohm Semiconductor

MOSFET N-CH 250V 8A TO220

Package: TO-220-2 Full Pack

Stock90,000
RCX051N25
Rohm Semiconductor

MOSFET N-CH 250V 5A TO220

Package: TO-220-2 Full Pack

Stock9,804
ZDX050N50
Rohm Semiconductor

MOSFET N-CH 500V 5A TO220FM

Package: TO-220-2 Full Pack

Stock10,116
RCJ120N25TL
Rohm Semiconductor

MOSFET N-CH 250V 12A LPT

Package: SC-83

Stock21,300
RCJ120N20TL
Rohm Semiconductor

MOSFET N-CH 200V 12A LPT

Package: SC-83

Stock23,124
RCJ050N25TL
Rohm Semiconductor

MOSFET N-CH 250V 5A LPT

Package: SC-83

Stock18,156
R8008ANX
Rohm Semiconductor

MOSFET N-CH 800V 8A TO-220FM

Package: TO-220-2 Full Pack

Stock7,728
RCX120N25
Rohm Semiconductor

MOSFET N-CH 250V 12A TO-220FM

Package: TO-220-2 Full Pack

Stock16,992
RCX100N25
Rohm Semiconductor

MOSFET N-CH 250V 10A TO-220FM

Package: TO-220-2 Full Pack

Stock12,864
R5009ANX
Rohm Semiconductor

MOSFET N-CH 500V 9A TO220

Package: TO-220-2 Full Pack

Stock13,236
R6004ENX
Rohm Semiconductor

MOSFET N-CH 600V 4A TO220

Package: TO-220-2 Full Pack

Stock9,408
RCX081N20
Rohm Semiconductor

MOSFET N-CH 200V 8A TO220

Package: TO-220-2 Full Pack

Stock6,672
R6004ENJTL
Rohm Semiconductor

MOSFET N-CH 600V 4A LPT

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock12,996

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
R5011ANX	Rohm Semiconductor	MOSFET N-CH 500V 11A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock10,056	MOSFET (Metal Oxide)	500V	11A (Ta)	10V	4.5V @ 1mA	30nC @ 10V	1000pF @ 25V	±30V	-	50W (Tc)	500 mOhm @ 5.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
R5007FNX	Rohm Semiconductor	MOSFET N-CH 500V 7A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock9,864	MOSFET (Metal Oxide)	500V	7A (Tc)	10V	4V @ 1mA	15nC @ 10V	450pF @ 25V	±30V	-	40W (Tc)	1.3 Ohm @ 3.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
RCX200N20	Rohm Semiconductor	MOSFET N-CH 200V 20A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.23W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock8,976	MOSFET (Metal Oxide)	200V	20A (Tc)	10V	5V @ 1mA	40nC @ 10V	1900pF @ 25V	±30V	-	2.23W (Ta), 40W (Tc)	130 mOhm @ 10A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
RCX160N20	Rohm Semiconductor	MOSFET N-CH 200V 16A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.25V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.23W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock24,360	MOSFET (Metal Oxide)	200V	16A (Tc)	10V	5.25V @ 1mA	26nC @ 10V	1370pF @ 25V	±30V	-	2.23W (Ta), 40W (Tc)	180 mOhm @ 8A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
ZDX080N50	Rohm Semiconductor	MOSFET N-CH 500V 8A TO220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock8,748	MOSFET (Metal Oxide)	500V	8A (Tc)	10V	4V @ 1mA	23nC @ 10V	1120pF @ 25V	±30V	-	40W (Tc)	850 mOhm @ 4A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
R5005CNX	Rohm Semiconductor	MOSFET N-CH 500V 5A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock10,692	MOSFET (Metal Oxide)	500V	5A (Tc)	10V	4.5V @ 1mA	10.8nC @ 10V	320pF @ 25V	±30V	-	40W (Tc)	1.6 Ohm @ 2.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
R5007ANX	Rohm Semiconductor	MOSFET N-CH 500V 7A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock138,384	MOSFET (Metal Oxide)	500V	7A (Ta)	10V	4.5V @ 1mA	13nC @ 10V	500pF @ 25V	±30V	-	40W (Tc)	1.05 Ohm @ 3.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
RCX080N25	Rohm Semiconductor	MOSFET N-CH 250V 8A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.23W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock90,000	MOSFET (Metal Oxide)	250V	8A (Tc)	10V	5V @ 1mA	15nC @ 10V	840pF @ 25V	±30V	-	2.23W (Ta), 35W (Tc)	600 mOhm @ 4A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
RCX051N25	Rohm Semiconductor	MOSFET N-CH 250V 5A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.23W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 1.36 Ohm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock9,804	MOSFET (Metal Oxide)	250V	5A (Tc)	10V	5.5V @ 1mA	8.5nC @ 10V	350pF @ 25V	±30V	-	2.23W (Ta), 30W (Tc)	1.36 Ohm @ 2.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
ZDX050N50	Rohm Semiconductor	MOSFET N-CH 500V 5A TO220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock10,116	MOSFET (Metal Oxide)	500V	5A (Tc)	10V	4.4V @ 1mA	14nC @ 10V	600pF @ 25V	±30V	-	40W (Tc)	1.5 Ohm @ 2.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
RCJ120N25TL	Rohm Semiconductor	MOSFET N-CH 250V 12A LPT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 235 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS (SC-83) Package / Case: SC-83	Package: SC-83	Stock21,300	MOSFET (Metal Oxide)	250V	12A (Tc)	10V	5V @ 1mA	35nC @ 10V	1800pF @ 25V	±30V	-	1.56W (Ta), 40W (Tc)	235 mOhm @ 6A, 10V	150°C (TJ)	Surface Mount	LPTS (SC-83)	SC-83
RCJ120N20TL	Rohm Semiconductor	MOSFET N-CH 200V 12A LPT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.25V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 325 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS (SC-83) Package / Case: SC-83	Package: SC-83	Stock23,124	MOSFET (Metal Oxide)	200V	12A (Tc)	10V	5.25V @ 1mA	15nC @ 10V	740pF @ 25V	±30V	-	1.56W (Ta), 40W (Tc)	325 mOhm @ 6A, 10V	150°C (TJ)	Surface Mount	LPTS (SC-83)	SC-83
RCJ050N25TL	Rohm Semiconductor	MOSFET N-CH 250V 5A LPT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1.56W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 1.36 Ohm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS (SC-83) Package / Case: SC-83	Package: SC-83	Stock18,156	MOSFET (Metal Oxide)	250V	5A (Tc)	10V	5.5V @ 1mA	8.5nC @ 10V	350pF @ 25V	±30V	-	1.56W (Ta), 30W (Tc)	1.36 Ohm @ 2.5A, 10V	150°C (TJ)	Surface Mount	LPTS (SC-83)	SC-83
R8008ANX	Rohm Semiconductor	MOSFET N-CH 800V 8A TO-220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 1.03 Ohm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock7,728	MOSFET (Metal Oxide)	800V	8A (Ta)	10V	5V @ 1mA	39nC @ 10V	1080pF @ 25V	±30V	-	50W (Tc)	1.03 Ohm @ 4A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
RCX120N25	Rohm Semiconductor	MOSFET N-CH 250V 12A TO-220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.23W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock16,992	MOSFET (Metal Oxide)	250V	12A (Ta)	10V	-	-	-	±30V	-	2.23W (Ta), 40W (Tc)	-	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
RCX100N25	Rohm Semiconductor	MOSFET N-CH 250V 10A TO-220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock12,864	MOSFET (Metal Oxide)	250V	10A (Ta)	10V	-	-	-	±30V	-	40W (Tc)	-	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
R5009ANX	Rohm Semiconductor	MOSFET N-CH 500V 9A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 720 mOhm @ 4.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock13,236	MOSFET (Metal Oxide)	500V	9A (Tc)	10V	4.5V @ 1mA	21nC @ 10V	650pF @ 25V	±30V	-	50W (Tc)	720 mOhm @ 4.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
R6004ENX	Rohm Semiconductor	MOSFET N-CH 600V 4A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 980 mOhm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock9,408	MOSFET (Metal Oxide)	600V	4A (Tc)	10V	4V @ 1mA	15nC @ 10V	250pF @ 25V	±20V	-	40W (Tc)	980 mOhm @ 1.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
RCX081N20	Rohm Semiconductor	MOSFET N-CH 200V 8A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.25V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.23W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 770 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock6,672	MOSFET (Metal Oxide)	200V	8A (Tc)	10V	5.25V @ 1mA	8.5nC @ 10V	330pF @ 25V	±30V	-	2.23W (Ta), 40W (Tc)	770 mOhm @ 4A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
R6004ENJTL	Rohm Semiconductor	MOSFET N-CH 600V 4A LPT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 980 mOhm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS (D2PAK) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock12,996	MOSFET (Metal Oxide)	600V	4A (Tc)	10V	4V @ 1mA	15nC @ 10V	250pF @ 25V	±20V	-	40W (Tc)	980 mOhm @ 1.5A, 10V	150°C (TJ)	Surface Mount	LPTS (D2PAK)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SCT2750NYTB	Rohm Semiconductor	1700V .75 OHM 6A SIC FET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4V @ 630µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 800V Vgs (Max): +22V, -6V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 975 mOhm @ 1.7A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock2,624	MOSFET (Metal Oxide)	1700V	5.9A (Tc)	18V	4V @ 630µA	17nC @ 18V	275pF @ 800V	+22V, -6V	-	57W (Tc)	975 mOhm @ 1.7A, 18V	175°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
RSJ650N10TL	Rohm Semiconductor	MOSFET N-CH 100V 65A LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 65A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10780pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 32.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock21,456	MOSFET (Metal Oxide)	100V	65A (Ta)	4V, 10V	2.5V @ 1mA	260nC @ 10V	10780pF @ 25V	±20V	-	100W (Tc)	9.1 mOhm @ 32.5A, 10V	150°C (TJ)	Surface Mount	LPTS	SC-83
RDX100N60FU6	Rohm Semiconductor	MOSFET N-CH 600V 10A TO-220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock20,016	MOSFET (Metal Oxide)	600V	10A (Ta)	10V	4V @ 1mA	45nC @ 10V	1600pF @ 25V	±30V	-	45W (Tc)	650 mOhm @ 5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
RCJ700N20TL	Rohm Semiconductor	MOSFET N-CH 200V 70A LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 42.7 mOhm @ 35A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock13,584	MOSFET (Metal Oxide)	200V	70A (Tc)	10V	5V @ 1mA	125nC @ 10V	6900pF @ 25V	±30V	-	1.56W (Ta), 40W (Tc)	42.7 mOhm @ 35A, 10V	150°C (TJ)	Surface Mount	LPTS	SC-83
RCJ510N25TL	Rohm Semiconductor	MOSFET N-CH 250V 51A LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 25.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock14,316	MOSFET (Metal Oxide)	250V	51A (Tc)	10V	5V @ 1mA	120nC @ 10V	7000pF @ 25V	±30V	-	1.56W (Ta), 40W (Tc)	65 mOhm @ 25.5A, 10V	150°C (TJ)	Surface Mount	LPTS	SC-83
R6008FNJTL	Rohm Semiconductor	MOSFET N-CH 600V 8A LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock14,724	MOSFET (Metal Oxide)	600V	8A (Tc)	10V	4V @ 1mA	20nC @ 10V	580pF @ 25V	±30V	-	50W (Tc)	950 mOhm @ 4A, 10V	150°C (TJ)	Surface Mount	LPTS	SC-83
RSJ10HN06TL	Rohm Semiconductor	MOSFET N-CH 60V 100A LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 202nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock12,516	MOSFET (Metal Oxide)	60V	100A (Ta)	4V, 10V	2.5V @ 1mA	202nC @ 10V	11000pF @ 10V	±20V	-	100W (Tc)	4.2 mOhm @ 50A, 10V	150°C (TJ)	Surface Mount	LPTS	SC-83
R5019ANJTL	Rohm Semiconductor	MOSFET N-CH 500V 19A LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock13,830	MOSFET (Metal Oxide)	500V	19A (Ta)	-	-	-	-	-	-	100W (Tc)	-	150°C (TJ)	Surface Mount	LPTS	SC-83