Page 39 - Rohm Semiconductor Products - Transistors - FETs, MOSFETs - Single

RUE002N05TL
Rohm Semiconductor

MOSFET N-CH 50V 0.2A EMT3

Package: SC-75, SOT-416

Stock36,000
R6004KNX
Rohm Semiconductor

MOSFET N-CH 600V 4A TO220-3

Package: TO-220-3 Full Pack

Stock3,568
R6004KNJTL
Rohm Semiconductor

MOSFET N-CH 600V 4A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,312
RF4E100AJTCR
Rohm Semiconductor

NCH 30V 10A MIDDLE POWER MOSFET

Package: 8-PowerUDFN

Stock7,632
RQ7E110AJTCR
Rohm Semiconductor

NCH 30V 11A MIDDLE POWER MOSFET

Package: 8-SMD, Flat Lead

Stock4,752
RQ6E055BNTCR
Rohm Semiconductor

MOSFET N-CH 30V 5.5A TSMT

Package: SOT-23-6 Thin, TSOT-23-6

Stock370,212
RYC002N05T316
Rohm Semiconductor

0.9V DRIVE NCH SILICON MOSFET

Package: TO-236-3, SC-59, SOT-23-3

Stock972,372
RE1L002SNTL
Rohm Semiconductor

2.5V DRIVE NCH MOSFET

Package: SC-89, SOT-490

Stock5,344
R5013ANXFU6
Rohm Semiconductor

MOSFET N-CH 500V 13A TO-220FM

Package: TO-220-2 Full Pack

Stock4,768
RCX300N20
Rohm Semiconductor

MOSFET N-CH 200V 30A TO220

Package: TO-220-2 Full Pack

Stock5,104
RS1E300GNTB
Rohm Semiconductor

MOSFET N-CH 30V 30A 8-HSOP

Package: 8-PowerTDFN

Stock5,664
RSD175N10TL
Rohm Semiconductor

MOSFET N-CH 100V 17.5A CPT3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock30,984
RF4E080BNTR
Rohm Semiconductor

MOSFET N-CH 30V 8A 8-HUML

Package: 8-PowerUDFN

Stock216,000
RV2C001ZPT2L
Rohm Semiconductor

MOSFET P-CH 20V 0.1A VML1006

Package: SC-101, SOT-883

Stock5,808
R6020ENX
Rohm Semiconductor

MOSFET N-CH 600V 20A TO220

Package: TO-220-2 Full Pack

Stock4,816
R8005ANX
Rohm Semiconductor

MOSFET N-CH 800V 5A TO220

Package: TO-220-2 Full Pack

Stock89,196
RQ1E070RPTR
Rohm Semiconductor

MOSFET P-CH 30V 7A TSMT8

Package: 8-SMD, Flat Lead

Stock6,000
RQ1A070ZPTR
Rohm Semiconductor

MOSFET P-CH 12V 7A TSMT8

Package: 8-SMD, Flat Lead

Stock7,808
R6004ENDTL
Rohm Semiconductor

MOSFET N-CH 600V 4A CPT3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,424
RSH070N05TB1
Rohm Semiconductor

MOSFET N-CH 45V 7A SOP8

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,696

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
RUE002N05TL	Rohm Semiconductor	MOSFET N-CH 50V 0.2A EMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: EMT3 Package / Case: SC-75, SOT-416	Package: SC-75, SOT-416	Stock36,000	MOSFET (Metal Oxide)	50V	200mA (Ta)	1.2V, 4.5V	1V @ 1mA	-	25pF @ 10V	±8V	-	150mW (Ta)	2.2 Ohm @ 200mA, 4.5V	150°C (TJ)	Surface Mount	EMT3	SC-75, SOT-416
R6004KNX	Rohm Semiconductor	MOSFET N-CH 600V 4A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 980 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,568	MOSFET (Metal Oxide)	600V	4A (Tc)	10V	5V @ 1mA	10.2nC @ 10V	280pF @ 25V	±20V	Schottky Diode (Isolated)	40W (Tc)	980 mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
R6004KNJTL	Rohm Semiconductor	MOSFET N-CH 600V 4A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 980 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,312	MOSFET (Metal Oxide)	600V	4A (Tc)	10V	5V @ 1mA	10.2nC @ 10V	280pF @ 25V	±20V	Schottky Diode (Isolated)	58W (Tc)	980 mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RF4E100AJTCR	Rohm Semiconductor	NCH 30V 10A MIDDLE POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 12.4 mOhm @ 10A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: HUML2020L8 Package / Case: 8-PowerUDFN	Package: 8-PowerUDFN	Stock7,632	MOSFET (Metal Oxide)	30V	10A (Ta)	4.5V	1.5V @ 1mA	13nC @ 4.5V	1460pF @ 15V	±12V	-	2W (Tc)	12.4 mOhm @ 10A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	HUML2020L8	8-PowerUDFN
RQ7E110AJTCR	Rohm Semiconductor	NCH 30V 11A MIDDLE POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1.5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.5W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 4.5A, 11V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT8 Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock4,752	MOSFET (Metal Oxide)	30V	11A (Tc)	4.5V	1.5V @ 10mA	22nC @ 4.5V	2410pF @ 15V	±12V	-	1.5W (Tc)	9 mOhm @ 4.5A, 11V	-55°C ~ 150°C (TJ)	Surface Mount	TSMT8	8-SMD, Flat Lead
RQ6E055BNTCR	Rohm Semiconductor	MOSFET N-CH 30V 5.5A TSMT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock370,212	MOSFET (Metal Oxide)	30V	5.5A (Ta)	4.5V, 10V	2.5V @ 1mA	8.6nC @ 10V	355pF @ 15V	±20V	-	1.25W (Ta)	25 mOhm @ 5.5A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
RYC002N05T316	Rohm Semiconductor	0.9V DRIVE NCH SILICON MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 800mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 350mW (Tc) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SST3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock972,372	MOSFET (Metal Oxide)	50V	200mA (Ta)	4.5V	800mV @ 1mA	-	26pF @ 10V	±8V	-	350mW (Tc)	2.2 Ohm @ 200mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SST3	TO-236-3, SC-59, SOT-23-3
RE1L002SNTL	Rohm Semiconductor	2.5V DRIVE NCH MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: EMT3F (SOT-416FL) Package / Case: SC-89, SOT-490	Package: SC-89, SOT-490	Stock5,344	MOSFET (Metal Oxide)	60V	250mA (Ta)	10V	2.3V @ 1mA	-	15pF @ 25V	±20V	-	150W (Tc)	2.4 Ohm @ 250mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	EMT3F (SOT-416FL)	SC-89, SOT-490
R5013ANXFU6	Rohm Semiconductor	MOSFET N-CH 500V 13A TO-220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 6.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock4,768	MOSFET (Metal Oxide)	500V	13A (Ta)	10V	4.5V @ 1mA	35nC @ 10V	1300pF @ 25V	±30V	-	50W (Tc)	380 mOhm @ 6.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
RCX300N20	Rohm Semiconductor	MOSFET N-CH 200V 30A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.23W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock5,104	MOSFET (Metal Oxide)	200V	30A (Tc)	10V	5V @ 1mA	60nC @ 10V	3200pF @ 25V	±30V	-	2.23W (Ta), 40W (Tc)	80 mOhm @ 15A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
RS1E300GNTB	Rohm Semiconductor	MOSFET N-CH 30V 30A 8-HSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 39.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,664	MOSFET (Metal Oxide)	30V	30A (Ta)	4.5V, 10V	2.5V @ 1mA	39.8nC @ 10V	2500pF @ 15V	±20V	-	3W (Ta), 33W (Tc)	2.2 mOhm @ 30A, 10V	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
RSD175N10TL	Rohm Semiconductor	MOSFET N-CH 100V 17.5A CPT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 8.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock30,984	MOSFET (Metal Oxide)	100V	17.5A (Ta)	4V, 10V	2.5V @ 1mA	24nC @ 10V	950pF @ 25V	±20V	-	20W (Tc)	105 mOhm @ 8.8A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
RF4E080BNTR	Rohm Semiconductor	MOSFET N-CH 30V 8A 8-HUML FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 17.6 mOhm @ 8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-HUML2020L8 (2x2) Package / Case: 8-PowerUDFN	Package: 8-PowerUDFN	Stock216,000	MOSFET (Metal Oxide)	30V	8A (Ta)	4.5V, 10V	2V @ 250µA	14.5nC @ 10V	660pF @ 15V	±20V	-	2W (Ta)	17.6 mOhm @ 8A, 10V	150°C (TJ)	Surface Mount	6-HUML2020L8 (2x2)	8-PowerUDFN
RV2C001ZPT2L	Rohm Semiconductor	MOSFET P-CH 20V 0.1A VML1006 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 100mW (Ta) Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 100mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VML1006 Package / Case: SC-101, SOT-883	Package: SC-101, SOT-883	Stock5,808	MOSFET (Metal Oxide)	20V	100mA (Ta)	1.2V, 4.5V	1V @ 100µA	-	15pF @ 10V	±10V	-	100mW (Ta)	3.8 Ohm @ 100mA, 4.5V	150°C (TJ)	Surface Mount	VML1006	SC-101, SOT-883
R6020ENX	Rohm Semiconductor	MOSFET N-CH 600V 20A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 196 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock4,816	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	4V @ 1mA	60nC @ 10V	1400pF @ 25V	±20V	-	50W (Tc)	196 mOhm @ 10A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
R8005ANX	Rohm Semiconductor	MOSFET N-CH 800V 5A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 2.08 Ohm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock89,196	MOSFET (Metal Oxide)	800V	5A (Tc)	10V	5V @ 1mA	21nC @ 10V	485pF @ 25V	±30V	-	40W (Tc)	2.08 Ohm @ 2.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
RQ1E070RPTR	Rohm Semiconductor	MOSFET P-CH 30V 7A TSMT8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 550mW (Ta) Rds On (Max) @ Id, Vgs: 17 mOhm @ 7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT8 Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock6,000	MOSFET (Metal Oxide)	30V	7A (Ta)	4V, 10V	2.5V @ 1mA	26nC @ 5V	2700pF @ 10V	±20V	-	550mW (Ta)	17 mOhm @ 7A, 10V	150°C (TJ)	Surface Mount	TSMT8	8-SMD, Flat Lead
RQ1A070ZPTR	Rohm Semiconductor	MOSFET P-CH 12V 7A TSMT8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 6V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 7A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT8 Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock7,808	MOSFET (Metal Oxide)	12V	7A (Ta)	1.5V, 4.5V	1V @ 1mA	58nC @ 4.5V	7400pF @ 6V	±10V	-	700mW (Ta)	12 mOhm @ 7A, 4.5V	150°C (TJ)	Surface Mount	TSMT8	8-SMD, Flat Lead
R6004ENDTL	Rohm Semiconductor	MOSFET N-CH 600V 4A CPT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 980 mOhm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,424	MOSFET (Metal Oxide)	600V	4A (Tc)	10V	4V @ 1mA	15nC @ 10V	250pF @ 25V	±20V	-	20W (Tc)	980 mOhm @ 1.5A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
RSH070N05TB1	Rohm Semiconductor	MOSFET N-CH 45V 7A SOP8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,696	MOSFET (Metal Oxide)	45V	7A (Ta)	4V, 10V	2.5V @ 1mA	16.8nC @ 5V	1000pF @ 10V	20V	-	2W (Ta)	25 mOhm @ 7A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RRQ045P03TR	Rohm Semiconductor	MOSFET P-CH 30V 4.5A TSMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock876,012	MOSFET (Metal Oxide)	30V	4.5A (Ta)	4V, 10V	2.5V @ 1mA	14nC @ 5V	1350pF @ 10V	±20V	-	600mW (Ta)	35 mOhm @ 4.5A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
RSQ045N03TR	Rohm Semiconductor	MOSFET N-CH 30V 4.5A TSMT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 38 mOhm @ 4.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock837,276	MOSFET (Metal Oxide)	30V	4.5A (Ta)	4V, 10V	2.5V @ 1mA	9.5nC @ 5V	520pF @ 10V	±20V	-	600mW (Ta)	38 mOhm @ 4.5A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
RSQ020N03TR	Rohm Semiconductor	MOSFET N-CH 30V 2A TSMT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 134 mOhm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock492,504	MOSFET (Metal Oxide)	30V	2A (Ta)	4V, 10V	2.5V @ 1mA	3.1nC @ 5V	110pF @ 10V	±20V	-	600mW (Ta)	134 mOhm @ 2A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
RF4C050APTR	Rohm Semiconductor	MOSFET P-CH 20V 10A 8HUML FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 10V Vgs (Max): -8V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 26 mOhm @ 5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-HUML2020L8 (2x2) Package / Case: 8-PowerUDFN	Package: 8-PowerUDFN	Stock4,256	MOSFET (Metal Oxide)	20V	10A (Ta)	1.8V, 4.5V	1V @ 1mA	55nC @ 4.5V	5500pF @ 10V	-8V	-	2W (Ta)	26 mOhm @ 5A, 4.5V	150°C (TJ)	Surface Mount	6-HUML2020L8 (2x2)	8-PowerUDFN
RQ3G100GNTB	Rohm Semiconductor	MOSFET N-CH 40V 10A TSMT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 615pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 14.3 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock2,480	MOSFET (Metal Oxide)	40V	10A (Ta)	4.5V, 10V	2.5V @ 1mA	8.4nC @ 10V	615pF @ 20V	±20V	-	2W (Ta)	14.3 mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN
RV2C002UNT2L	Rohm Semiconductor	MOSFET N-CH 20V 0.18A VML1006 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 100mW (Ta) Rds On (Max) @ Id, Vgs: 2 Ohm @ 150mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VML1006 Package / Case: SC-101, SOT-883	Package: SC-101, SOT-883	Stock4,000	MOSFET (Metal Oxide)	20V	180mA (Ta)	1.2V, 4.5V	1V @ 100µA	-	12pF @ 10V	±10V	-	100mW (Ta)	2 Ohm @ 150mA, 4.5V	150°C (TJ)	Surface Mount	VML1006	SC-101, SOT-883
SCT3160KLGC11	Rohm Semiconductor	MOSFET NCH 1.2KV 17A TO247N FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.6V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 800V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 103W (Tc) Rds On (Max) @ Id, Vgs: 208 mOhm @ 5A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	Package: TO-247-3	Stock6,048	SiCFET (Silicon Carbide)	1200V	17A (Tc)	18V	5.6V @ 2.5mA	42nC @ 18V	398pF @ 800V	+22V, -4V	-	103W (Tc)	208 mOhm @ 5A, 18V	175°C (TJ)	Through Hole	TO-247N	TO-247-3
RSS060P05FU6TB	Rohm Semiconductor	MOSFET P-CH 45V 6A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 32.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 36 mOhm @ 6A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock16,356	MOSFET (Metal Oxide)	45V	6A (Ta)	4V, 10V	-	32.2nC @ 5V	2700pF @ 10V	±20V	-	2W (Ta)	36 mOhm @ 6A, 10V	-	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)