Page 42 - Rohm Semiconductor Products - Transistors - FETs, MOSFETs - Single

R5207ANDTL
Rohm Semiconductor

MOSFET N-CH 10V DRIVE CPT

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,992
RCX050N25
Rohm Semiconductor

MOSFET N-CH 250V 5A TO-220FM

Package: TO-220-2 Full Pack

Stock7,216
RSJ300N10TL
Rohm Semiconductor

MOSFET N-CH 100V 30A LPTS

Package: SC-83

Stock6,832
R4008ANDTL
Rohm Semiconductor

MOSFET N-CH 10V DRIVE CPT

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,816
R5205CNDTL
Rohm Semiconductor

MOSFET N-CH 10V DRIVE CPT

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,240
R5005CNJTL
Rohm Semiconductor

MOSFET N-CH 10V DRIVE LPTS

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,840
RSH140N03TB1
Rohm Semiconductor

MOSFET N-CH 30V 14A SOP8

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,784
RSS130N03FU6TB
Rohm Semiconductor

MOSFET N-CH 30V 13A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock188,556
RDN050N20FU6
Rohm Semiconductor

MOSFET N-CH 200V 5A TO-220FN

Package: TO-220-3 Full Pack

Stock2,720
RRS100P03TB1
Rohm Semiconductor

MOSFET P-CH 30V 10A 8SOIC

Package: 8-SOIC

Stock7,728
RCJ160N20TL
Rohm Semiconductor

MOSFET N-CH 200V 16A LPTS

Package: SC-83

Stock2,624
RZY200P01TL
Rohm Semiconductor

MOSFET P-CH 12V 20A TCPT3

Package: 3-SMD, Flat Leads

Stock3,232
RSS075P03FU6TB
Rohm Semiconductor

MOSFET P-CH 30V 7.5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock25,680
RCD100N20TL
Rohm Semiconductor

MOSFET N-CH 200V 10A CPT3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,104
RRH100P03TB1
Rohm Semiconductor

MOSFET P-CH 30V 10A SOP8

Package: 8-SOIC (0.154", 3.90mm Width)

Stock14,784
RSS125N03FU6TB
Rohm Semiconductor

MOSFET N-CH 30V 12.5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,448
RSH125N03TB1
Rohm Semiconductor

MOSFET N-CH 30V 12.5A SOP8

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,048
RSS110N03FU6TB
Rohm Semiconductor

MOSFET N-CH 30V 11A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock210,000
2SK2094TL
Rohm Semiconductor

MOSFET N-CH 60V 2A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock182,400
RDD020N60TL
Rohm Semiconductor

MOSFET N-CH 600V 2A CPT3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,120

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
R5207ANDTL	Rohm Semiconductor	MOSFET N-CH 10V DRIVE CPT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 525V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,992	MOSFET (Metal Oxide)	525V	7A (Ta)	10V	4.5V @ 1mA	13nC @ 10V	500pF @ 25V	±30V	-	40W (Tc)	1 Ohm @ 3.5A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
RCX050N25	Rohm Semiconductor	MOSFET N-CH 250V 5A TO-220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 1100 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock7,216	MOSFET (Metal Oxide)	250V	5A (Ta)	10V	5.5V @ 1mA	9nC @ 10V	410pF @ 25V	±30V	-	30W (Tc)	1100 mOhm @ 2.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
RSJ300N10TL	Rohm Semiconductor	MOSFET N-CH 100V 30A LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock6,832	MOSFET (Metal Oxide)	100V	30A (Ta)	4V, 10V	2.5V @ 1mA	50nC @ 10V	2200pF @ 25V	±20V	-	50W (Tc)	52 mOhm @ 15A, 10V	150°C (TJ)	Surface Mount	LPTS	SC-83
R4008ANDTL	Rohm Semiconductor	MOSFET N-CH 10V DRIVE CPT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,816	MOSFET (Metal Oxide)	400V	8A (Ta)	10V	4.5V @ 1mA	15nC @ 10V	500pF @ 25V	±30V	-	20W (Tc)	950 mOhm @ 4A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
R5205CNDTL	Rohm Semiconductor	MOSFET N-CH 10V DRIVE CPT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 525V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,240	MOSFET (Metal Oxide)	525V	5A (Ta)	10V	4.5V @ 1mA	10.8nC @ 10V	320pF @ 25V	±30V	-	40W (Tc)	1.6 Ohm @ 2.5A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
R5005CNJTL	Rohm Semiconductor	MOSFET N-CH 10V DRIVE LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,840	MOSFET (Metal Oxide)	500V	5A (Ta)	10V	4.5V @ 1mA	10.8nC @ 10V	320pF @ 25V	±30V	-	40W (Tc)	1.6 Ohm @ 2.5A, 10V	150°C (TJ)	Surface Mount	LPTS	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RSH140N03TB1	Rohm Semiconductor	MOSFET N-CH 30V 14A SOP8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,784	MOSFET (Metal Oxide)	30V	14A (Ta)	4V, 10V	-	-	-	±20V	-	2W (Ta)	-	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RSS130N03FU6TB	Rohm Semiconductor	MOSFET N-CH 30V 13A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 8.1 mOhm @ 13A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock188,556	MOSFET (Metal Oxide)	30V	13A (Ta)	4V, 10V	2.5V @ 1mA	35nC @ 5V	2000pF @ 10V	20V	-	2W (Ta)	8.1 mOhm @ 13A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RDN050N20FU6	Rohm Semiconductor	MOSFET N-CH 200V 5A TO-220FN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 292pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 720 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FN Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,720	MOSFET (Metal Oxide)	200V	5A (Ta)	10V	4V @ 1mA	18.6nC @ 10V	292pF @ 10V	±30V	-	30W (Tc)	720 mOhm @ 2.5A, 10V	150°C (TJ)	Through Hole	TO-220FN	TO-220-3 Full Pack
RRS100P03TB1	Rohm Semiconductor	MOSFET P-CH 30V 10A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC	Package: 8-SOIC	Stock7,728	MOSFET (Metal Oxide)	30V	10A (Ta)	-	-	-	-	-	-	-	-	-	Surface Mount	8-SOIC	8-SOIC
RCJ160N20TL	Rohm Semiconductor	MOSFET N-CH 200V 16A LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.25V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock2,624	MOSFET (Metal Oxide)	200V	16A (Tc)	10V	5.25V @ 1mA	26nC @ 10V	1370pF @ 25V	±30V	-	1.56W (Ta), 40W (Tc)	180 mOhm @ 8A, 10V	150°C (TJ)	Surface Mount	LPTS	SC-83
RZY200P01TL	Rohm Semiconductor	MOSFET P-CH 12V 20A TCPT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TCPT3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock3,232	MOSFET (Metal Oxide)	12V	20A (Ta)	-	-	-	-	±10V	-	20W (Tc)	-	150°C (TJ)	Surface Mount	TCPT3	3-SMD, Flat Leads
RSS075P03FU6TB	Rohm Semiconductor	MOSFET P-CH 30V 7.5A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock25,680	MOSFET (Metal Oxide)	30V	7.5A (Ta)	4V, 10V	2.5V @ 1mA	30nC @ 5V	2900pF @ 10V	±20V	-	2W (Ta)	21 mOhm @ 7.5A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RCD100N20TL	Rohm Semiconductor	MOSFET N-CH 200V 10A CPT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.25V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 850mW (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 182 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,104	MOSFET (Metal Oxide)	200V	10A (Tc)	10V	5.25V @ 1mA	25nC @ 10V	1400pF @ 25V	±30V	-	850mW (Ta), 20W (Tc)	182 mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
RRH100P03TB1	Rohm Semiconductor	MOSFET P-CH 30V 10A SOP8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 650mW (Ta) Rds On (Max) @ Id, Vgs: 12.6 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock14,784	MOSFET (Metal Oxide)	30V	10A (Ta)	4V, 10V	2.5V @ 1mA	39nC @ 5V	3600pF @ 10V	±20V	-	650mW (Ta)	12.6 mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RSS125N03FU6TB	Rohm Semiconductor	MOSFET N-CH 30V 12.5A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 10V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,448	MOSFET (Metal Oxide)	30V	12.5A (Ta)	4V, 10V	2.5V @ 1mA	28nC @ 5V	1670pF @ 10V	20V	-	2W (Ta)	8.9 mOhm @ 12.5A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RSH125N03TB1	Rohm Semiconductor	MOSFET N-CH 30V 12.5A SOP8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 12.5A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,048	MOSFET (Metal Oxide)	30V	12.5A (Ta)	4V, 10V	2.5V @ 1mA	28nC @ 5V	1670pF @ 10V	±20V	-	2W (Ta)	9.1 mOhm @ 12.5A, 10V	-	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RSS110N03FU6TB	Rohm Semiconductor	MOSFET N-CH 30V 11A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 10.7 mOhm @ 11A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock210,000	MOSFET (Metal Oxide)	30V	11A (Ta)	4V, 10V	2.5V @ 1mA	17nC @ 5V	1300pF @ 10V	20V	-	2W (Ta)	10.7 mOhm @ 11A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
2SK2094TL	Rohm Semiconductor	MOSFET N-CH 60V 2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock182,400	MOSFET (Metal Oxide)	60V	2A (Ta)	4V, 10V	2.5V @ 1mA	-	400pF @ 10V	±20V	-	20W (Tc)	350 mOhm @ 1A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
RDD020N60TL	Rohm Semiconductor	MOSFET N-CH 600V 2A CPT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,120	MOSFET (Metal Oxide)	600V	2A (Ta)	10V	-	-	-	±30V	-	20W (Tc)	-	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
RSS100N03FU6TB	Rohm Semiconductor	MOSFET N-CH 30V 10A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 10V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock122,004	MOSFET (Metal Oxide)	30V	10A (Ta)	4V, 10V	2.5V @ 1mA	14nC @ 5V	1070pF @ 10V	20V	-	2W (Ta)	13 mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RS1G180MNTB	Rohm Semiconductor	MOSFET N-CH 40V 18A 8HSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 18A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,920	MOSFET (Metal Oxide)	40V	18A (Ta), 80A (Tc)	4.5V, 10V	2.5V @ 1mA	19.5nC @ 10V	1293pF @ 20V	±20V	-	3W (Ta), 30W (Tc)	7 mOhm @ 18A, 10V	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
RRH090P03TB1	Rohm Semiconductor	MOSFET P-CH 30V 9A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 650mW (Ta) Rds On (Max) @ Id, Vgs: 15.4 mOhm @ 9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock17,688	MOSFET (Metal Oxide)	30V	9A (Ta)	4V, 10V	2.5V @ 1mA	30nC @ 5V	3000pF @ 10V	±20V	-	650mW (Ta)	15.4 mOhm @ 9A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RCD075N20TL	Rohm Semiconductor	MOSFET N-CH 200V 7.5A CPT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.25V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 850mW (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 325 mOhm @ 3.75A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,432	MOSFET (Metal Oxide)	200V	7.5A (Tc)	10V	5.25V @ 1mA	15nC @ 10V	755pF @ 25V	±30V	-	850mW (Ta), 20W (Tc)	325 mOhm @ 3.75A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
RCD060N25TL	Rohm Semiconductor	MOSFET N-CH 250V 6A CPT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 850mW (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 530 mOhm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock30,000	MOSFET (Metal Oxide)	250V	6A (Tc)	10V	5V @ 1mA	15nC @ 10V	840pF @ 25V	±30V	-	850mW (Ta), 20W (Tc)	530 mOhm @ 3A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
RRH075P03TB1	Rohm Semiconductor	MOSFET P-CH 30V 7.5A SOP8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 650mW (Ta) Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock82,188	MOSFET (Metal Oxide)	30V	7.5A (Ta)	4V, 10V	2.5V @ 1mA	21nC @ 5V	1900pF @ 10V	±20V	-	650mW (Ta)	21 mOhm @ 7.5A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RSY200N05TL	Rohm Semiconductor	MOSFET N-CH 45V 20A TCPT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Ta) Rds On (Max) @ Id, Vgs: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TCPT3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock7,600	MOSFET (Metal Oxide)	45V	20A (Ta)	4.5V, 10V	-	-	-	±20V	-	20W (Ta)	-	150°C (TJ)	Surface Mount	TCPT3	3-SMD, Flat Leads
RDD020N50TL	Rohm Semiconductor	MOSFET N-CH 500V 2A CPT3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,016	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-