Page 43 - Rohm Semiconductor Products - Transistors - FETs, MOSFETs - Single

RDN120N25
Rohm Semiconductor

MOSFET N-CH 250V 12A TO-220FN

Package: TO-220-3 Full Pack

Stock14,676
RDN100N20
Rohm Semiconductor

MOSFET N-CH 200V 10A TO-220FN

Package: TO-220-3 Full Pack

Stock2,000
2SK2740
Rohm Semiconductor

MOSFET N-CH 600V 7A TO-220FN

Package: TO-220-3 Full Pack

Stock3,392
2SK2713
Rohm Semiconductor

MOSFET N-CH 450V 5A TO-220FN

Package: TO-220-3 Full Pack

Stock3,696
2SK2299N
Rohm Semiconductor

MOSFET N-CH 450V 7A TO-220FN

Package: TO-220-3 Full Pack

Stock5,472
2SK2095N
Rohm Semiconductor

MOSFET N-CH 60V 10A TO-220FN

Package: TO-220-3 Full Pack

Stock9,072
RK7002T116
Rohm Semiconductor

MOSFET N-CH 60V 115MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock3,758,580
R6046ANZC8
Rohm Semiconductor

MOSFET N-CH 10V DRIVE TO-3PF

Package: TO-3PFM, SC-93-3

Stock3,920
R6020ANJTL
Rohm Semiconductor

MOSFET N-CH 10V DRIVE LPTS

Package: SC-83

Stock2,000
R5016ANX
Rohm Semiconductor

MOSFET N-CH 500V 16A TO-220FM

Package: TO-220-2 Full Pack

Stock34,500
R6018ANJTL
Rohm Semiconductor

MOSFET N-CH 10V DRIVE LPTS

Package: SC-83

Stock7,856
R5021ANJTL
Rohm Semiconductor

MOSFET N-CH 10V DRIVE LPTS

Package: SC-83

Stock5,232
RDN100N20FU6
Rohm Semiconductor

MOSFET N-CH 200V 10A TO-220FN

Package: TO-220-3 Full Pack

Stock12,924
R6015ANJTL
Rohm Semiconductor

MOSFET N-CH 10V DRIVE LPTS

Package: SC-83

Stock3,408
R5016ANJTL
Rohm Semiconductor

MOSFET N-CH 10V DRIVE LPTS

Package: SC-83

Stock3,936
R6012ANJTL
Rohm Semiconductor

MOSFET N-CH 10V DRIVE LPTS

Package: SC-83

Stock3,616
RCX330N25
Rohm Semiconductor

MOSFET N-CH 250V 33A TO-220FM

Package: TO-220-2 Full Pack

Stock78,384
R5013ANJTL
Rohm Semiconductor

MOSFET N-CH 10V DRIVE LPTS

Package: SC-83

Stock3,872
RMW280N03TB
Rohm Semiconductor

MOSFET N-CH 30V 28A 8PSOP

Package: 8-SMD, Flat Lead

Stock6,208
RDN150N20FU6
Rohm Semiconductor

MOSFET N-CH 200V 15A TO-220FN

Package: TO-220-3 Full Pack

Stock2,608

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
RDN120N25	Rohm Semiconductor	MOSFET N-CH 250V 12A TO-220FN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1224pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FN Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock14,676	MOSFET (Metal Oxide)	250V	12A (Ta)	10V	4V @ 1mA	62nC @ 10V	1224pF @ 10V	±30V	-	40W (Tc)	210 mOhm @ 6A, 10V	150°C (TJ)	Through Hole	TO-220FN	TO-220-3 Full Pack
RDN100N20	Rohm Semiconductor	MOSFET N-CH 200V 10A TO-220FN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 543pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FN Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,000	MOSFET (Metal Oxide)	200V	10A (Ta)	10V	4V @ 1mA	30nC @ 10V	543pF @ 10V	±30V	-	35W (Tc)	360 mOhm @ 5A, 10V	150°C (TJ)	Through Hole	TO-220FN	TO-220-3 Full Pack
2SK2740	Rohm Semiconductor	MOSFET N-CH 600V 7A TO-220FN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FN Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,392	MOSFET (Metal Oxide)	600V	7A (Ta)	10V	4V @ 1mA	-	1050pF @ 10V	±30V	-	30W (Tc)	1.2 Ohm @ 4A, 10V	150°C (TJ)	Through Hole	TO-220FN	TO-220-3 Full Pack
2SK2713	Rohm Semiconductor	MOSFET N-CH 450V 5A TO-220FN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FN Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,696	MOSFET (Metal Oxide)	450V	5A (Ta)	10V	4V @ 1mA	-	600pF @ 10V	±30V	-	30W (Tc)	1.4 Ohm @ 2.5A, 10V	150°C (TJ)	Through Hole	TO-220FN	TO-220-3 Full Pack
2SK2299N	Rohm Semiconductor	MOSFET N-CH 450V 7A TO-220FN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FN Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,472	MOSFET (Metal Oxide)	450V	7A (Ta)	10V	4V @ 1mA	-	870pF @ 10V	±30V	-	30W (Tc)	1.1 Ohm @ 4A, 10V	150°C (TJ)	Through Hole	TO-220FN	TO-220-3 Full Pack
2SK2095N	Rohm Semiconductor	MOSFET N-CH 60V 10A TO-220FN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FN Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock9,072	MOSFET (Metal Oxide)	60V	10A (Ta)	4V, 10V	2.5V @ 1mA	-	1600pF @ 10V	±20V	-	30W (Tc)	95 mOhm @ 5A, 10V	150°C (TJ)	Through Hole	TO-220FN	TO-220-3 Full Pack
RK7002T116	Rohm Semiconductor	MOSFET N-CH 60V 115MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SST3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,758,580	MOSFET (Metal Oxide)	60V	115mA (Ta)	5V, 10V	2.5V @ 1mA	-	50pF @ 25V	±20V	-	225mW (Ta)	7.5 Ohm @ 500mA, 10V	150°C (TJ)	Surface Mount	SST3	TO-236-3, SC-59, SOT-23-3
R6046ANZC8	Rohm Semiconductor	MOSFET N-CH 10V DRIVE TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 46A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 81 mOhm @ 23A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3PFM, SC-93-3	Package: TO-3PFM, SC-93-3	Stock3,920	MOSFET (Metal Oxide)	600V	46A (Ta)	10V	4.5V @ 1mA	150nC @ 10V	6000pF @ 25V	±30V	-	120W (Tc)	81 mOhm @ 23A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3PFM, SC-93-3
R6020ANJTL	Rohm Semiconductor	MOSFET N-CH 10V DRIVE LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock2,000	MOSFET (Metal Oxide)	600V	20A (Ta)	10V	4.5V @ 1mA	65nC @ 10V	2040pF @ 25V	±30V	-	100W (Tc)	250 mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	LPTS	SC-83
R5016ANX	Rohm Semiconductor	MOSFET N-CH 500V 16A TO-220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock34,500	MOSFET (Metal Oxide)	500V	16A (Ta)	10V	4.5V @ 1mA	50nC @ 10V	1800pF @ 25V	±30V	-	50W (Tc)	270 mOhm @ 8A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
R6018ANJTL	Rohm Semiconductor	MOSFET N-CH 10V DRIVE LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock7,856	MOSFET (Metal Oxide)	600V	18A (Ta)	10V	4.5V @ 1mA	55nC @ 10V	2050pF @ 25V	±30V	-	100W (Tc)	270 mOhm @ 9A, 10V	150°C (TJ)	Surface Mount	LPTS	SC-83
R5021ANJTL	Rohm Semiconductor	MOSFET N-CH 10V DRIVE LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 10.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock5,232	MOSFET (Metal Oxide)	500V	21A (Tc)	-	4.5V @ 1mA	64nC @ 10V	2300pF @ 25V	-	-	100W (Tc)	220 mOhm @ 10.5A, 10V	150°C (TJ)	Surface Mount	LPTS	SC-83
RDN100N20FU6	Rohm Semiconductor	MOSFET N-CH 200V 10A TO-220FN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 543pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FN Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock12,924	MOSFET (Metal Oxide)	200V	10A (Ta)	10V	4V @ 1mA	30nC @ 10V	543pF @ 10V	±30V	-	35W (Tc)	360 mOhm @ 5A, 10V	150°C (TJ)	Through Hole	TO-220FN	TO-220-3 Full Pack
R6015ANJTL	Rohm Semiconductor	MOSFET N-CH 10V DRIVE LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock3,408	MOSFET (Metal Oxide)	600V	15A (Tc)	-	4.5V @ 1mA	50nC @ 10V	1700pF @ 25V	-	-	100W (Tc)	300 mOhm @ 7.5A, 10V	150°C (TJ)	Surface Mount	LPTS	SC-83
R5016ANJTL	Rohm Semiconductor	MOSFET N-CH 10V DRIVE LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock3,936	MOSFET (Metal Oxide)	500V	16A (Ta)	10V	4.5V @ 1mA	50nC @ 10V	1800pF @ 25V	±30V	-	100W (Tc)	270 mOhm @ 8A, 10V	150°C (TJ)	Surface Mount	LPTS	SC-83
R6012ANJTL	Rohm Semiconductor	MOSFET N-CH 10V DRIVE LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock3,616	MOSFET (Metal Oxide)	600V	12A (Ta)	10V	4.5V @ 1mA	35nC @ 10V	1300pF @ 25V	±30V	-	100W (Tc)	420 mOhm @ 6A, 10V	150°C (TJ)	Surface Mount	LPTS	SC-83
RCX330N25	Rohm Semiconductor	MOSFET N-CH 250V 33A TO-220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 33A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.23W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock78,384	MOSFET (Metal Oxide)	250V	33A (Ta)	10V	-	-	-	±30V	-	2.23W (Ta), 40W (Tc)	-	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
R5013ANJTL	Rohm Semiconductor	MOSFET N-CH 10V DRIVE LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 6.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock3,872	MOSFET (Metal Oxide)	500V	13A (Ta)	10V	4.5V @ 1mA	35nC @ 10V	1300pF @ 25V	±30V	-	100W (Tc)	380 mOhm @ 6.5A, 10V	150°C (TJ)	Surface Mount	LPTS	SC-83
RMW280N03TB	Rohm Semiconductor	MOSFET N-CH 30V 28A 8PSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3130pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 28A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PSOP Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock6,208	MOSFET (Metal Oxide)	30V	28A (Ta)	4.5V, 10V	2.5V @ 1mA	53nC @ 10V	3130pF @ 15V	±20V	-	3W (Ta)	2.8 mOhm @ 28A, 10V	150°C (TJ)	Surface Mount	8-PSOP	8-SMD, Flat Lead
RDN150N20FU6	Rohm Semiconductor	MOSFET N-CH 200V 15A TO-220FN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1224pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FN Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,608	MOSFET (Metal Oxide)	200V	15A (Ta)	10V	4V @ 1mA	64nC @ 10V	1224pF @ 10V	±30V	-	40W (Tc)	160 mOhm @ 7.5A, 10V	150°C (TJ)	Through Hole	TO-220FN	TO-220-3 Full Pack
R5009ANJTL	Rohm Semiconductor	MOSFET N-CH 500V 9A LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 720 mOhm @ 4.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock2,656	MOSFET (Metal Oxide)	500V	9A (Ta)	10V	4.5V @ 1mA	21nC @ 10V	650pF @ 25V	±30V	-	50W (Tc)	720 mOhm @ 4.5A, 10V	150°C (TJ)	Surface Mount	LPTS	SC-83
R5011ANJTL	Rohm Semiconductor	MOSFET N-CH 10V DRIVE LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock2,368	MOSFET (Metal Oxide)	500V	11A (Ta)	10V	4.5V @ 1mA	30nC @ 10V	1000pF @ 25V	±30V	-	75W (Tc)	500 mOhm @ 5.5A, 10V	150°C (TJ)	Surface Mount	LPTS	SC-83
ZDX130N50	Rohm Semiconductor	MOSFET N-CH 500V 13A TO220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 520 mOhm @ 6.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock15,120	MOSFET (Metal Oxide)	500V	13A (Tc)	10V	4.5V @ 1mA	40nC @ 10V	2180pF @ 25V	±30V	-	40W (Tc)	520 mOhm @ 6.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
R5007ANJTL	Rohm Semiconductor	MOSFET N-CH 10V DRIVE LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock3,296	MOSFET (Metal Oxide)	500V	7A (Ta)	10V	4.5V @ 1mA	13nC @ 10V	500pF @ 25V	±30V	-	40W (Tc)	1.05 Ohm @ 3.5A, 10V	150°C (TJ)	Surface Mount	LPTS	SC-83
RSY500N04FRATL	Rohm Semiconductor	MOSFET N-CH 40V 50A TCPT3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock5,712	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RP1E050RPTR	Rohm Semiconductor	MOSFET P-CH 30V 5A MPT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MPT6 Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock2,384	MOSFET (Metal Oxide)	30V	5A (Ta)	4V, 10V	2.5V @ 1mA	9.2nC @ 5V	850pF @ 10V	±20V	-	2W (Ta)	50 mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	MPT6	6-SMD, Flat Leads
RSS090P03FU6TB	Rohm Semiconductor	MOSFET P-CH 30V 9A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 14 mOhm @ 9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,544	MOSFET (Metal Oxide)	30V	9A (Ta)	4V, 10V	2.5V @ 1mA	39nC @ 5V	4000pF @ 10V	20V	-	2W (Ta)	14 mOhm @ 9A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RCX120N20	Rohm Semiconductor	MOSFET N-CH 200V 12A TO-220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.25V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.23W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 325 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock2,080	MOSFET (Metal Oxide)	200V	12A (Tc)	10V	5.25V @ 1mA	15nC @ 10V	740pF @ 25V	±30V	-	2.23W (Ta), 40W (Tc)	325 mOhm @ 6A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack