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STMicroelectronics |
DIODE GEN PURP 600V 8A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.75V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 52ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Insulated, TO-220AC
- Supplier Device Package: TO-220AC ins
- Operating Temperature - Junction: 150°C (Max)
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Package: TO-220-2 Insulated, TO-220AC |
Stock1,664,220 |
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600V | 8A | 1.75V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 52ns | 100µA @ 600V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | 150°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 20A DOP3I
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.75V @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DOP3I-2 Insulated (Straight Leads)
- Supplier Device Package: DOP3I
- Operating Temperature - Junction: 150°C (Max)
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Package: DOP3I-2 Insulated (Straight Leads) |
Stock4,320 |
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600V | 20A | 1.75V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 100µA @ 600V | - | Through Hole | DOP3I-2 Insulated (Straight Leads) | DOP3I | 150°C (Max) |
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STMicroelectronics |
DIODE SCHOTTKY 20V 3A DO201AD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 475mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: 150°C (Max)
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Package: DO-201AD, Axial |
Stock4,944 |
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20V | 3A | 475mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 20V | - | Through Hole | DO-201AD, Axial | DO-201AD | 150°C (Max) |
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STMicroelectronics |
DIODE SCHOTTKY 20V 3A DO201AD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 475mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: 150°C (Max)
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Package: DO-201AD, Axial |
Stock24,624 |
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20V | 3A | 475mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 20V | - | Through Hole | DO-201AD, Axial | DO-201AD | 150°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 200V 4A DO201AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 3µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AB, DO-32, Axial
- Supplier Device Package: DO-201AB
- Operating Temperature - Junction: 175°C (Max)
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Package: DO-201AB, DO-32, Axial |
Stock21,600 |
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200V | 4A | 1.05V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 3µA @ 200V | - | Through Hole | DO-201AB, DO-32, Axial | DO-201AB | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 200V 4A DO201AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 12A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 3µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AB, DO-32, Axial
- Supplier Device Package: DO-201AB
- Operating Temperature - Junction: 175°C (Max)
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Package: DO-201AB, DO-32, Axial |
Stock159,600 |
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200V | 4A | 1.25V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 3µA @ 200V | - | Through Hole | DO-201AB, DO-32, Axial | DO-201AB | 175°C (Max) |
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STMicroelectronics |
DIODE MODULE 400V ISOTOP
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock5,824 |
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- | - | - | - | - | - | - | - | - | - | - |
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STMicroelectronics |
DIODE SCHOTTKY 650V TO-247
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.45V @ 20A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 300µA @ 650V
- Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: TO-247-3 |
Stock5,584 |
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650V | 20A | 1.45V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 650V | 1250pF @ 0V, 1MHz | Through Hole | TO-247-3 | TO-247 | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 650V DO-247
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.45V @ 20A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 300µA @ 650V
- Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-247-2 (Straight Leads)
- Supplier Device Package: DO-247
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: DO-247-2 (Straight Leads) |
Stock6,144 |
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650V | 20A | 1.45V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 650V | 1250pF @ 0V, 1MHz | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 650V DO-247
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.45V @ 20A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 300µA @ 650V
- Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-247-2 (Straight Leads)
- Supplier Device Package: DO-247
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: DO-247-2 (Straight Leads) |
Stock4,160 |
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650V | 20A | 1.45V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 650V | 1250pF @ 0V, 1MHz | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 400V 60A DO247
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 80ns
- Current - Reverse Leakage @ Vr: 60µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-247-2 (Straight Leads)
- Supplier Device Package: DO-247
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: DO-247-2 (Straight Leads) |
Stock7,904 |
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400V | 60A | 1.5V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 60µA @ 400V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 650V TO220AC INS
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.45V @ 20A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 300µA @ 650V
- Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Insulated, TO-220AC
- Supplier Device Package: TO-220AC ins
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: TO-220-2 Insulated, TO-220AC |
Stock2,096 |
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650V | 20A | 1.45V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 650V | 1250pF @ 0V, 1MHz | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 650V TO220AC
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.45V @ 20A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 300µA @ 650V
- Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: TO-220-2 |
Stock3,456 |
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650V | 20A | 1.45V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 650V | 1250pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 650V 6A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.75V @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 60µA @ 650V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Insulated, TO-220AC
- Supplier Device Package: TO-220AC ins
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: TO-220-2 Insulated, TO-220AC |
Stock7,424 |
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650V | 6A | 1.75V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60µA @ 650V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | -40°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 400V 60A TO247
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 1.35V @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 55ns
- Current - Reverse Leakage @ Vr: 20µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
- Operating Temperature - Junction: 175°C (Max)
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Package: TO-247-3 |
Stock4,048 |
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400V | 60A | 1.35V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 20µA @ 400V | - | Through Hole | TO-247-3 | TO-247 | 175°C (Max) |
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STMicroelectronics |
DIODE SCHOTTKY 650V 12A TO220AC
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.45V @ 12A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 150µA @ 650V
- Capacitance @ Vr, F: 750pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: TO-220-2 |
Stock7,424 |
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650V | 12A | 1.45V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 150µA @ 650V | 750pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
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STMicroelectronics |
IC COOL BYPASS SW 40V 8VFQFPN
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 12V
- Current - Average Rectified (Io): 16A (DC)
- Voltage - Forward (Vf) (Max) @ If: 140mV @ 16A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 12V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-VFQFPN (6x5)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: 8-PowerVDFN |
Stock7,728 |
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12V | 16A (DC) | 140mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 12V | - | Surface Mount | 8-PowerVDFN | 8-VFQFPN (6x5) | -40°C ~ 150°C |
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STMicroelectronics |
DIODE SCHOTTKY 60V 20A TO220AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 565mV @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 125µA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Operating Temperature - Junction: 150°C (Max)
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Package: TO-220-3 |
Stock6,144 |
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60V | 20A | 565mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 125µA @ 60V | - | Through Hole | TO-220-3 | TO-220AB | 150°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 400V 20A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 45ns
- Current - Reverse Leakage @ Vr: 20µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: 175°C (Max)
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Package: TO-220-2 |
Stock6,288 |
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400V | 20A | 1.7V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 20µA @ 400V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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STMicroelectronics |
IC COOL BYPASS SW 16A 20V D2PAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 140mV @ 16A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,960 |
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20V | 16A | 140mV @ 16A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 20V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 25V 15A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 25V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 460mV @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1.3mA @ 25V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: 150°C (Max)
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Package: TO-220-2 |
Stock3,840 |
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25V | 15A | 460mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.3mA @ 25V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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STMicroelectronics |
DIODE SCHOTTKY 100V 30A TO220FP
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 175µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220FPAB
- Operating Temperature - Junction: 150°C (Max)
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Package: TO-220-3 Full Pack |
Stock72,780 |
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100V | 30A | 800mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 175µA @ 100V | - | Through Hole | TO-220-3 Full Pack | TO-220FPAB | 150°C (Max) |
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STMicroelectronics |
IC COOL BYPASS SWITCH 12V 8WDFN
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 12V
- Current - Average Rectified (Io): 16A (DC)
- Voltage - Forward (Vf) (Max) @ If: 140mV @ 16A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 12V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-VFQFPN (6x5)
- Operating Temperature - Junction: -40°C ~ 150°C
|
Package: 8-PowerVDFN |
Stock4,752 |
|
12V | 16A (DC) | 140mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 12V | - | Surface Mount | 8-PowerVDFN | 8-VFQFPN (6x5) | -40°C ~ 150°C |
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STMicroelectronics |
DIODE TURBO2 600V 30A TO-3P
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.95V @ 30A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60ns
- Current - Reverse Leakage @ Vr: 20µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
- Operating Temperature - Junction: 175°C (Max)
|
Package: TO-3P-3, SC-65-3 |
Stock6,128 |
|
600V | 30A | 1.95V @ 30A | Standard Recovery >500ns, > 200mA (Io) | 60ns | 20µA @ 600V | - | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 175°C (Max) |
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STMicroelectronics |
DIODE SCHOTTKY 650V TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.75V @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 60µA @ 650V
- Capacitance @ Vr, F: 270pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -40°C ~ 175°C
|
Package: TO-220-2 |
Stock6,160 |
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650V | 6A | 1.75V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60µA @ 650V | 270pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 600V 12A TO220FP
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 3.4V @ 12A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 21ns
- Current - Reverse Leakage @ Vr: 30µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package: TO-220FPAC
- Operating Temperature - Junction: 175°C (Max)
|
Package: TO-220-2 Full Pack, Isolated Tab |
Stock231,336 |
|
600V | 12A | 3.4V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 21ns | 30µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FPAC | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 200V 15A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 36ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: 175°C (Max)
|
Package: TO-220-2 |
Stock7,848 |
|
200V | 15A | 1.1V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 36ns | 10µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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STMicroelectronics |
DIODE SCHOTTKY 100V 8A TO220FPAC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 710mV @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 4.5µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package: TO-220FPAC
- Operating Temperature - Junction: 175°C (Max)
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Package: TO-220-2 Full Pack, Isolated Tab |
Stock94,152 |
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100V | 8A | 710mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4.5µA @ 100V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FPAC | 175°C (Max) |