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STMicroelectronics |
DIODE GEN PURP 200V 25A DOP3I
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 40A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 25µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DOP3I-2 Insulated (Straight Leads)
- Supplier Device Package: DOP3I
- Operating Temperature - Junction: -40°C ~ 150°C
|
Package: DOP3I-2 Insulated (Straight Leads) |
Stock5,696 |
|
200V | 25A | 1.15V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 25µA @ 200V | - | Through Hole | DOP3I-2 Insulated (Straight Leads) | DOP3I | -40°C ~ 150°C |
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STMicroelectronics |
DIODE GEN PURP 400V 30A DOP3I
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 100ns
- Current - Reverse Leakage @ Vr: 35µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DOP3I-2 Insulated (Straight Leads)
- Supplier Device Package: DOP3I
- Operating Temperature - Junction: -40°C ~ 150°C
|
Package: DOP3I-2 Insulated (Straight Leads) |
Stock78,144 |
|
400V | 30A | 1.5V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 35µA @ 400V | - | Through Hole | DOP3I-2 Insulated (Straight Leads) | DOP3I | -40°C ~ 150°C |
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STMicroelectronics |
DIODE GEN PURP 600V 30A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.55V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 90ns
- Current - Reverse Leakage @ Vr: 25µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: 175°C (Max)
|
Package: TO-220-2 |
Stock4,976 |
|
600V | 30A | 1.55V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 25µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 20A DOP3I
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.75V @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DOP3I-2 Insulated (Straight Leads)
- Supplier Device Package: DOP3I
- Operating Temperature - Junction: 150°C (Max)
|
Package: DOP3I-2 Insulated (Straight Leads) |
Stock3,216 |
|
600V | 20A | 1.75V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 100µA @ 600V | - | Through Hole | DOP3I-2 Insulated (Straight Leads) | DOP3I | 150°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 1.2KV 15A DOP3I
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 2.1V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 105ns
- Current - Reverse Leakage @ Vr: 100µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DOP3I-2 Insulated (Straight Leads)
- Supplier Device Package: DOP3I
- Operating Temperature - Junction: 150°C (Max)
|
Package: DOP3I-2 Insulated (Straight Leads) |
Stock6,544 |
|
1200V | 15A | 2.1V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 105ns | 100µA @ 1200V | - | Through Hole | DOP3I-2 Insulated (Straight Leads) | DOP3I | 150°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 5A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.75V @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: 150°C (Max)
|
Package: TO-220-2 |
Stock39,240 |
|
600V | 5A | 1.75V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 1.2KV 2A SMC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.65V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 115ns
- Current - Reverse Leakage @ Vr: 20µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC
- Operating Temperature - Junction: 125°C (Max)
|
Package: DO-214AB, SMC |
Stock870,000 |
|
1200V | 2A | 1.65V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 115ns | 20µA @ 1200V | - | Surface Mount | DO-214AB, SMC | SMC | 125°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 1.2KV 1A SMB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.65V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 115ns
- Current - Reverse Leakage @ Vr: 10µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB
- Operating Temperature - Junction: 125°C (Max)
|
Package: DO-214AA, SMB |
Stock482,700 |
|
1200V | 1A | 1.65V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 115ns | 10µA @ 1200V | - | Surface Mount | DO-214AA, SMB | SMB | 125°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 200V 15A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 50µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: 150°C (Max)
|
Package: TO-220-2 |
Stock62,592 |
|
200V | 15A | 1.25V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 50µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 400V 1A SMB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60ns
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB
- Operating Temperature - Junction: -40°C ~ 150°C
|
Package: DO-214AA, SMB |
Stock1,287,528 |
|
400V | 1A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 400V | - | Surface Mount | DO-214AA, SMB | SMB | -40°C ~ 150°C |
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STMicroelectronics |
DIODE GEN PURP 200V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: 150°C (Max)
|
Package: DO-201AD, Axial |
Stock518,256 |
|
200V | 3A | 1.2V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | 150°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 200V 1.5A DO15
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 4.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: 150°C (Max)
|
Package: DO-204AC, DO-15, Axial |
Stock167,892 |
|
200V | 1.5A | 1.2V @ 4.5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | DO-204AC, DO-15, Axial | DO-15 | 150°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 200V 2A SMB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB (DO-214AA)
- Operating Temperature - Junction: 150°C (Max)
|
Package: DO-214AA, SMB |
Stock554,448 |
|
200V | 2A | 1.25V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Surface Mount | DO-214AA, SMB | SMB (DO-214AA) | 150°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 200V 1.5A DO15
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 4.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: 150°C (Max)
|
Package: DO-204AC, DO-15, Axial |
Stock2,656 |
|
200V | 1.5A | 1.2V @ 4.5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | DO-204AC, DO-15, Axial | DO-15 | 150°C (Max) |
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|
STMicroelectronics |
DIODE GEN PURP 200V 1A SMB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 3µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB (DO-214AA)
- Operating Temperature - Junction: 150°C (Max)
|
Package: DO-214AA, SMB |
Stock597,600 |
|
200V | 1A | 900mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 3µA @ 200V | - | Surface Mount | DO-214AA, SMB | SMB (DO-214AA) | 150°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 200V 4A SMC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 12A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC (DO-214AB)
- Operating Temperature - Junction: 150°C (Max)
|
Package: DO-214AB, SMC |
Stock858,168 |
|
200V | 4A | 1.25V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | 150°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 200V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: 150°C (Max)
|
Package: DO-201AD, Axial |
Stock4,816 |
|
200V | 3A | 1.2V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | 150°C (Max) |
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|
STMicroelectronics |
DIODE GEN PURP 600V 1A SMB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB
- Operating Temperature - Junction: 125°C (Max)
|
Package: DO-214AA, SMB |
Stock636,000 |
|
600V | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | - | Surface Mount | DO-214AA, SMB | SMB | 125°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 400V 1A DO15
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 55ns
- Current - Reverse Leakage @ Vr: 20µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: -40°C ~ 150°C
|
Package: DO-204AC, DO-15, Axial |
Stock3,568 |
|
400V | 1A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 20µA @ 400V | - | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -40°C ~ 150°C |
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|
STMicroelectronics |
DIODE GEN PURP 600V 1A DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 45ns
- Current - Reverse Leakage @ Vr: 1µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: 175°C (Max)
|
Package: DO-204AL, DO-41, Axial |
Stock4,928 |
|
600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 1µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | 175°C (Max) |
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|
STMicroelectronics |
DIODE GEN PURP 200V 8A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 16A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 50µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: 150°C (Max)
|
Package: TO-220-2 |
Stock32,136 |
|
200V | 8A | 1.25V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 50µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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|
STMicroelectronics |
DIODE GEN PURP 600V 8A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.75V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 52ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: 150°C (Max)
|
Package: TO-220-2 |
Stock191,088 |
|
600V | 8A | 1.75V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 52ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
|
|
STMicroelectronics |
DIODE GEN PURP 200V 10A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: 150°C (Max)
|
Package: TO-220-2 |
Stock77,964 |
|
200V | 10A | 1.15V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
|
|
STMicroelectronics |
DIODE GEN 1.2KV 5A ISOWATT220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 2.2V @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 95ns
- Current - Reverse Leakage @ Vr: 100µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: ISOWATT220AC-3
- Supplier Device Package: ISOWATT-220AC
- Operating Temperature - Junction: 150°C (Max)
|
Package: ISOWATT220AC-3 |
Stock6,156 |
|
1200V | 5A | 2.2V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 100µA @ 1200V | - | Through Hole | ISOWATT220AC-3 | ISOWATT-220AC | 150°C (Max) |
|
|
STMicroelectronics |
DIODE GEN PURP 600V 12A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.75V @ 12A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 55ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: 150°C (Max)
|
Package: TO-220-2 |
Stock78,864 |
|
600V | 12A | 1.75V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
|
|
STMicroelectronics |
DIODE GEN PURP 600V 20A SOD93-2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.75V @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: SOD-93-2
- Supplier Device Package: SOD-93-2
- Operating Temperature - Junction: 150°C (Max)
|
Package: SOD-93-2 |
Stock18,000 |
|
600V | 20A | 1.75V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 100µA @ 600V | - | Through Hole | SOD-93-2 | SOD-93-2 | 150°C (Max) |
|
|
STMicroelectronics |
DIODE GEN PURP 1KV 12A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.9V @ 12A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 155ns
- Current - Reverse Leakage @ Vr: 50µA @ 1000V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Isolated Tab
- Supplier Device Package: TO220AC Isolated
- Operating Temperature - Junction: -40°C ~ 150°C
|
Package: TO-220-2 Isolated Tab |
Stock66,000 |
|
1000V | 12A | 1.9V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 155ns | 50µA @ 1000V | - | Through Hole | TO-220-2 Isolated Tab | TO220AC Isolated | -40°C ~ 150°C |
|
|
STMicroelectronics |
DIODE GEN PURP 1KV 30A DOP3I
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.9V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 165ns
- Current - Reverse Leakage @ Vr: 100µA @ 1000V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DOP3I-2 Insulated (Straight Leads)
- Supplier Device Package: DOP3I
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: DOP3I-2 Insulated (Straight Leads) |
Stock75,600 |
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1000V | 30A | 1.9V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 165ns | 100µA @ 1000V | - | Through Hole | DOP3I-2 Insulated (Straight Leads) | DOP3I | -40°C ~ 150°C |