Page 17 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STW55NM60ND
STMicroelectronics

MOSFET N-CH 600V 51A TO-247

Package: TO-247-3

Stock11,148
STW60NM50N
STMicroelectronics

MOSFET N CH 500V 68A TO-247

Package: TO-247-3

Stock14,040
STW21N150K5
STMicroelectronics

MOSFET N-CH 1500V 14A TO-247

Package: TO-247-3

Stock7,788
STW70N60M2
STMicroelectronics

MOSFET N-CH 600V 68A TO247

Package: TO-247-3

Stock6,800
STW57N65M5
STMicroelectronics

MOSFET N-CH 650V 42A TO-247

Package: TO-247-3

Stock7,568
STW65N80K5
STMicroelectronics

MOSFET N-CH 800V 46A

Package: TO-247-3

Stock17,280
STW43NM60ND
STMicroelectronics

MOSFET N-CH 600V 35A TO-247

Package: TO-247-3

Stock163,800
STW12N150K5
STMicroelectronics

MOSFET N-CH 1500V 7A TO-247

Package: TO-247-3

Stock12,600
STW26NM50
STMicroelectronics

MOSFET N-CH 500V 30A TO-247

Package: TO-247-3

Stock42,108
STW72N60DM2AG
STMicroelectronics

MOSFET N-CH 600V 66A

Package: TO-247-3

Stock12,156
STW65N65DM2AG
STMicroelectronics

MOSFET N-CH 650V 60A

Package: TO-247-3

Stock7,200
STP42N60M2-EP
STMicroelectronics

MOSFET N-CH 600V 34A EP TO220AB

Package: TO-220-3

Stock14,874
STF25N80K5
STMicroelectronics

MOSFET N-CH 800V 19.5A TO220FP

Package: TO-220-3 Full Pack

Stock9,096
STW75NF30
STMicroelectronics

MOSFET N-CH 300V 60A TO-247

Package: TO-247-3

Stock74,628
STW26NM60N
STMicroelectronics

MOSFET N-CH 600V 20A TO-247

Package: TO-247-3

Stock55,596
STP3N150
STMicroelectronics

MOSFET N-CH 1500V 2.5A TO-220

Package: TO-220-3

Stock7,072
STF21N90K5
STMicroelectronics

MOSFET N-CH 900V 18.5A TO-220FP

Package: TO-220-3 Full Pack

Stock107,040
STW15NK90Z
STMicroelectronics

MOSFET N-CH 900V 15A TO-247

Package: TO-247-3

Stock17,532
STW11NM80
STMicroelectronics

MOSFET N-CH 800V 11A TO-247

Package: TO-247-3

Stock12,732
STW6N120K3
STMicroelectronics

MOSFET N-CH 1200V 6A TO-247

Package: TO-247-3

Stock46,836

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STW55NM60ND	STMicroelectronics	MOSFET N-CH 600V 51A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 350W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 25.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock11,148	MOSFET (Metal Oxide)	600V	51A (Tc)	10V	5V @ 250µA	190nC @ 10V	5800pF @ 50V	±25V	-	350W (Tc)	60 mOhm @ 25.5A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW60NM50N	STMicroelectronics	MOSFET N CH 500V 68A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5790pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 43 mOhm @ 34A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock14,040	MOSFET (Metal Oxide)	500V	68A (Tc)	10V	4V @ 250µA	178nC @ 10V	5790pF @ 100V	±25V	-	446W (Tc)	43 mOhm @ 34A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
STW21N150K5	STMicroelectronics	MOSFET N-CH 1500V 14A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3145pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock7,788	MOSFET (Metal Oxide)	1500V	14A (Tc)	10V	5V @ 100µA	89nC @ 10V	3145pF @ 100V	±30V	-	446W (Tc)	900 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STW70N60M2	STMicroelectronics	MOSFET N-CH 600V 68A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 450W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock6,800	MOSFET (Metal Oxide)	600V	68A (Tc)	10V	4V @ 250µA	118nC @ 10V	5200pF @ 100V	±25V	-	450W (Tc)	40 mOhm @ 34A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STW57N65M5	STMicroelectronics	MOSFET N-CH 650V 42A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 63 mOhm @ 21A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock7,568	MOSFET (Metal Oxide)	650V	42A (Tc)	10V	5V @ 250µA	98nC @ 10V	4200pF @ 100V	±25V	-	250W (Tc)	63 mOhm @ 21A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
STW65N80K5	STMicroelectronics	MOSFET N-CH 800V 46A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3230pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 23A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock17,280	MOSFET (Metal Oxide)	800V	46A (Tc)	10V	5V @ 100µA	92nC @ 10V	3230pF @ 100V	±30V	-	446W (Tc)	80 mOhm @ 23A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STW43NM60ND	STMicroelectronics	MOSFET N-CH 600V 35A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 88 mOhm @ 17.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock163,800	MOSFET (Metal Oxide)	600V	35A (Tc)	10V	5V @ 250µA	145nC @ 10V	4300pF @ 50V	±25V	-	255W (Tc)	88 mOhm @ 17.5A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW12N150K5	STMicroelectronics	MOSFET N-CH 1500V 7A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock12,600	MOSFET (Metal Oxide)	1500V	7A (Tc)	10V	5V @ 100µA	47nC @ 10V	1360pF @ 100V	±30V	-	250W (Tc)	1.9 Ohm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STW26NM50	STMicroelectronics	MOSFET N-CH 500V 30A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 313W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 13A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock42,108	MOSFET (Metal Oxide)	500V	30A (Tc)	10V	5V @ 250µA	106nC @ 10V	3000pF @ 25V	±30V	-	313W (Tc)	120 mOhm @ 13A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW72N60DM2AG	STMicroelectronics	MOSFET N-CH 600V 66A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 121nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5508pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 42 mOhm @ 33A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock12,156	MOSFET (Metal Oxide)	600V	66A (Tc)	10V	5V @ 250µA	121nC @ 10V	5508pF @ 100V	±25V	-	446W (Tc)	42 mOhm @ 33A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STW65N65DM2AG	STMicroelectronics	MOSFET N-CH 650V 60A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock7,200	MOSFET (Metal Oxide)	650V	60A (Tc)	10V	5V @ 250µA	120nC @ 10V	5500pF @ 100V	±25V	-	446W (Tc)	50 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STP42N60M2-EP	STMicroelectronics	MOSFET N-CH 600V 34A EP TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 87 mOhm @ 17A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock14,874	MOSFET (Metal Oxide)	600V	34A (Tc)	10V	4V @ 250µA	55nC @ 10V	2370pF @ 100V	±25V	-	250W (Tc)	87 mOhm @ 17A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
STF25N80K5	STMicroelectronics	MOSFET N-CH 800V 19.5A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 260 mOhm @ 19.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock9,096	MOSFET (Metal Oxide)	800V	19.5A (Tc)	10V	5V @ 100µA	40nC @ 10V	1600pF @ 100V	±30V	-	40W (Tc)	260 mOhm @ 19.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STW75NF30	STMicroelectronics	MOSFET N-CH 300V 60A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 164nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5930pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 320W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock74,628	MOSFET (Metal Oxide)	300V	60A (Tc)	10V	4V @ 250µA	164nC @ 10V	5930pF @ 25V	±20V	-	320W (Tc)	45 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW26NM60N	STMicroelectronics	MOSFET N-CH 600V 20A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock55,596	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	4V @ 250µA	60nC @ 10V	1800pF @ 50V	±30V	-	140W (Tc)	165 mOhm @ 10A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STP3N150	STMicroelectronics	MOSFET N-CH 1500V 2.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 939pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 9 Ohm @ 1.3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,072	MOSFET (Metal Oxide)	1500V	2.5A (Tc)	10V	5V @ 250µA	29.3nC @ 10V	939pF @ 25V	±30V	-	140W (Tc)	9 Ohm @ 1.3A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STF21N90K5	STMicroelectronics	MOSFET N-CH 900V 18.5A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1645pF @ 100V Vgs (Max): ±30V FET Feature: Current Sensing Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 299 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock107,040	MOSFET (Metal Oxide)	900V	18.5A (Tc)	10V	5V @ 100µA	43nC @ 10V	1645pF @ 100V	±30V	Current Sensing	40W (Tc)	299 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STW15NK90Z	STMicroelectronics	MOSFET N-CH 900V 15A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 256nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 350W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock17,532	MOSFET (Metal Oxide)	900V	15A (Tc)	10V	4.5V @ 150µA	256nC @ 10V	6100pF @ 25V	±30V	-	350W (Tc)	550 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW11NM80	STMicroelectronics	MOSFET N-CH 800V 11A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock12,732	MOSFET (Metal Oxide)	800V	11A (Tc)	10V	5V @ 250µA	43.6nC @ 10V	1630pF @ 25V	±30V	-	150W (Tc)	400 mOhm @ 5.5A, 10V	-65°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW6N120K3	STMicroelectronics	MOSFET N-CH 1200V 6A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock46,836	MOSFET (Metal Oxide)	1200V	6A (Tc)	10V	5V @ 100µA	34nC @ 10V	1050pF @ 100V	±30V	-	150W (Tc)	2.4 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STW11NK100Z	STMicroelectronics	MOSFET N-CH 1KV 8.3A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 8.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 162nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 1.38 Ohm @ 4.15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock49,500	MOSFET (Metal Oxide)	1000V	8.3A (Tc)	10V	4.5V @ 100µA	162nC @ 10V	3500pF @ 25V	±30V	-	230W (Tc)	1.38 Ohm @ 4.15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW20NM60	STMicroelectronics	MOSFET N-CH 600V 20A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock48,576	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	5V @ 250µA	54nC @ 10V	1500pF @ 25V	±30V	-	192W (Tc)	290 mOhm @ 10A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STF11NM80	STMicroelectronics	MOSFET N-CH 800V 11A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock585,672	MOSFET (Metal Oxide)	800V	11A (Tc)	10V	5V @ 250µA	43.6nC @ 10V	1630pF @ 25V	±30V	-	35W (Tc)	400 mOhm @ 5.5A, 10V	-65°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP6N120K3	STMicroelectronics	MOSFET N-CH 1200V 6A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock9,744	MOSFET (Metal Oxide)	1200V	6A (Tc)	10V	5V @ 100µA	34nC @ 10V	1050pF @ 100V	±30V	-	150W (Tc)	2.4 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STP315N10F7	STMicroelectronics	MOSFET N-CH 100V 180A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 315W (Tc) Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock20,616	MOSFET (Metal Oxide)	100V	180A (Tc)	10V	4.5V @ 250µA	180nC @ 10V	12800pF @ 25V	±20V	-	315W (Tc)	2.7 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
STP45N40DM2AG	STMicroelectronics	MOSFET N-CH 400V 38A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 72 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock13,248	MOSFET (Metal Oxide)	400V	38A (Tc)	10V	5V @ 250µA	56nC @ 10V	2600pF @ 100V	±25V	-	250W (Tc)	72 mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STP75NF20	STMicroelectronics	MOSFET N-CH 200V 75A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3260pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 37A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock395,052	MOSFET (Metal Oxide)	200V	75A (Tc)	10V	4V @ 250µA	84nC @ 10V	3260pF @ 25V	±20V	-	190W (Tc)	34 mOhm @ 37A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STW40N65M2	STMicroelectronics	MOSFET N-CH 650V 32A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2355pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 99 mOhm @ 16A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock8,172	MOSFET (Metal Oxide)	650V	32A (Tc)	10V	4V @ 250µA	56.5nC @ 10V	2355pF @ 100V	±25V	-	250W (Tc)	99 mOhm @ 16A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3