Page 20 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STF21NM60ND
STMicroelectronics

MOSFET N-CH 600V 17A TO-220FP

Package: TO-220-3 Full Pack

Stock86,172
STW18NM80
STMicroelectronics

MOSFET N-CH 800V 17A TO-247

Package: TO-247-3

Stock38,952
STP28NM50N
STMicroelectronics

MOSFET N-CH 500V 21A TO-220

Package: TO-220-3

Stock6,112
STW32NM50N
STMicroelectronics

MOSFET N CH 500V 22A TO-247

Package: TO-247-3

Stock17,820
STP11NM80
STMicroelectronics

MOSFET N-CH 800V 11A TO-220

Package: TO-220-3

Stock121,164
STP32NM50N
STMicroelectronics

MOSFET N CH 500V 22A TO-220

Package: TO-220-3

Stock7,320
STF10N80K5
STMicroelectronics

MOSFET N-CH 800V 9A TO-220FP

Package: TO-220-3 Full Pack

Stock4,464
STP13N80K5
STMicroelectronics

MOSFET N-CH 800V 12A TO220

Package: TO-220-3

Stock5,296
STF24N60DM2
STMicroelectronics

MOSFET N-CH 600V 18A TO220FP

Package: TO-220-3 Full Pack

Stock10,032
STF8NK100Z
STMicroelectronics

MOSFET N-CH 1000V 6.5A TO220FP

Package: TO-220-3 Full Pack

Stock18,288
STP15NK50ZFP
STMicroelectronics

MOSFET N-CH 500V 14A TO-220FP

Package: TO-220-3 Full Pack

Stock583,248
STW13N80K5
STMicroelectronics

MOSFET N-CH 800V 12A TO-247

Package: TO-247-3

Stock5,904
STP24N60M2
STMicroelectronics

MOSFET N-CH 600V 18A TO-220

Package: TO-220-3

Stock120,216
STB23NM60ND
STMicroelectronics

MOSFET N-CH 600V 19.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,368
STF18N65M5
STMicroelectronics

MOSFET N-CH 650V 15A TO-220FP

Package: TO-220-3 Full Pack

Stock14,520
STF11NM60ND
STMicroelectronics

MOSFET N-CH 600V 10A TO-220FP

Package: TO-220-3 Full Pack

Stock48,756
STF13NM60ND
STMicroelectronics

MOSFET N-CH 600V 11A TO-220FP

Package: TO-220-3 Full Pack

Stock20,016
STV240N75F3
STMicroelectronics

MOSFET N-CH 75V 240A POWERSO-10

Package: PowerSO-10 Exposed Bottom Pad

Stock7,648
STP75NF75FP
STMicroelectronics

MOSFET N-CH 75V 80A TO-220FP

Package: TO-220-3 Full Pack

Stock482,664
STP14NK50ZFP
STMicroelectronics

MOSFET N-CH 500V 14A TO-220FP

Package: TO-220-3 Full Pack

Stock149,820

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STF21NM60ND	STMicroelectronics	MOSFET N-CH 600V 17A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 8.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock86,172	MOSFET (Metal Oxide)	600V	17A (Tc)	10V	5V @ 250µA	60nC @ 10V	1800pF @ 50V	±25V	-	30W (Tc)	220 mOhm @ 8.5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STW18NM80	STMicroelectronics	MOSFET N-CH 800V 17A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 295 mOhm @ 8.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock38,952	MOSFET (Metal Oxide)	800V	17A (Tc)	10V	5V @ 250µA	70nC @ 10V	2070pF @ 50V	±30V	-	190W (Tc)	295 mOhm @ 8.5A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STP28NM50N	STMicroelectronics	MOSFET N-CH 500V 21A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 158 mOhm @ 10.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,112	MOSFET (Metal Oxide)	500V	21A (Tc)	10V	4V @ 250µA	50nC @ 10V	1735pF @ 25V	±25V	-	150W (Tc)	158 mOhm @ 10.5A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STW32NM50N	STMicroelectronics	MOSFET N CH 500V 22A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1973pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 11A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock17,820	MOSFET (Metal Oxide)	500V	22A (Tc)	10V	4V @ 250µA	62.5nC @ 10V	1973pF @ 50V	±25V	-	190W (Tc)	130 mOhm @ 11A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
STP11NM80	STMicroelectronics	MOSFET N-CH 800V 11A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock121,164	MOSFET (Metal Oxide)	800V	11A (Tc)	10V	5V @ 250µA	43.6nC @ 10V	1630pF @ 25V	±30V	-	150W (Tc)	400 mOhm @ 5.5A, 10V	-65°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP32NM50N	STMicroelectronics	MOSFET N CH 500V 22A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1973pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 11A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock7,320	MOSFET (Metal Oxide)	500V	22A (Tc)	10V	4V @ 250µA	62.5nC @ 10V	1973pF @ 50V	±25V	-	190W (Tc)	130 mOhm @ 11A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
STF10N80K5	STMicroelectronics	MOSFET N-CH 800V 9A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,464	MOSFET (Metal Oxide)	800V	9A (Tc)	10V	5V @ 100µA	22nC @ 10V	635pF @ 100V	±30V	-	30W (Tc)	600 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP13N80K5	STMicroelectronics	MOSFET N-CH 800V 12A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock5,296	MOSFET (Metal Oxide)	800V	12A (Tc)	10V	5V @ 100µA	29nC @ 10V	870pF @ 100V	±30V	-	190W (Tc)	450 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STF24N60DM2	STMicroelectronics	MOSFET N-CH 600V 18A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock10,032	MOSFET (Metal Oxide)	600V	18A (Tc)	10V	5V @ 250µA	29nC @ 10V	1055pF @ 100V	±25V	-	30W (Tc)	200 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
STF8NK100Z	STMicroelectronics	MOSFET N-CH 1000V 6.5A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.85 Ohm @ 3.15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock18,288	MOSFET (Metal Oxide)	1000V	6.5A (Tc)	10V	4.5V @ 100µA	102nC @ 10V	2180pF @ 25V	±30V	-	40W (Tc)	1.85 Ohm @ 3.15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP15NK50ZFP	STMicroelectronics	MOSFET N-CH 500V 14A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 340 mOhm @ 7A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock583,248	MOSFET (Metal Oxide)	500V	14A (Tc)	10V	4.5V @ 100µA	106nC @ 10V	2260pF @ 25V	±30V	-	40W (Tc)	340 mOhm @ 7A, 10V	-50°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STW13N80K5	STMicroelectronics	MOSFET N-CH 800V 12A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock5,904	MOSFET (Metal Oxide)	800V	12A (Tc)	10V	5V @ 100µA	29nC @ 10V	870pF @ 100V	±30V	-	190W (Tc)	450 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STP24N60M2	STMicroelectronics	MOSFET N-CH 600V 18A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock120,216	MOSFET (Metal Oxide)	600V	18A (Tc)	10V	4V @ 250µA	29nC @ 10V	1060pF @ 100V	±25V	-	150W (Tc)	190 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STB23NM60ND	STMicroelectronics	MOSFET N-CH 600V 19.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,368	MOSFET (Metal Oxide)	600V	19.5A (Tc)	10V	5V @ 250µA	70nC @ 10V	2050pF @ 50V	±25V	-	150W (Tc)	180 mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STF18N65M5	STMicroelectronics	MOSFET N-CH 650V 15A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock14,520	MOSFET (Metal Oxide)	650V	15A (Tc)	10V	5V @ 250µA	31nC @ 10V	1240pF @ 100V	±25V	-	25W (Tc)	220 mOhm @ 7.5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF11NM60ND	STMicroelectronics	MOSFET N-CH 600V 10A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock48,756	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	5V @ 250µA	30nC @ 10V	850pF @ 50V	±25V	-	25W (Tc)	450 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF13NM60ND	STMicroelectronics	MOSFET N-CH 600V 11A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock20,016	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	5V @ 250µA	24.5nC @ 10V	845pF @ 50V	±25V	-	25W (Tc)	380 mOhm @ 5.5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STV240N75F3	STMicroelectronics	MOSFET N-CH 75V 240A POWERSO-10 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 120A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PowerSO Package / Case: PowerSO-10 Exposed Bottom Pad	Package: PowerSO-10 Exposed Bottom Pad	Stock7,648	MOSFET (Metal Oxide)	75V	240A (Tc)	10V	4V @ 250µA	100nC @ 10V	6800pF @ 25V	±20V	-	300W (Tc)	2.6 mOhm @ 120A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	10-PowerSO	PowerSO-10 Exposed Bottom Pad
STP75NF75FP	STMicroelectronics	MOSFET N-CH 75V 80A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock482,664	MOSFET (Metal Oxide)	75V	80A (Tc)	10V	4V @ 250µA	160nC @ 10V	3700pF @ 25V	±20V	-	45W (Tc)	11 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP14NK50ZFP	STMicroelectronics	MOSFET N-CH 500V 14A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock149,820	MOSFET (Metal Oxide)	500V	14A (Tc)	10V	4.5V @ 100µA	92nC @ 10V	2000pF @ 25V	±30V	-	35W (Tc)	380 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STB21NM60ND	STMicroelectronics	MOSFET N-CH 600V 17A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 8.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock44,400	MOSFET (Metal Oxide)	600V	17A (Tc)	10V	5V @ 250µA	60nC @ 10V	1800pF @ 50V	±25V	-	140W (Tc)	220 mOhm @ 8.5A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STH240N75F3-6	STMicroelectronics	MOSFET N-CH 75V 180A H2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock20,544	MOSFET (Metal Oxide)	75V	180A (Tc)	10V	4V @ 250µA	87nC @ 10V	6800pF @ 25V	±20V	-	300W (Tc)	3 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2PAK	TO-263-7, D2Pak (6 Leads + Tab)
STB26NM60N	STMicroelectronics	MOSFET N-CH 600V 20A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock390,000	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	4V @ 250µA	60nC @ 10V	1800pF @ 50V	±30V	-	140W (Tc)	165 mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STW10NK80Z	STMicroelectronics	MOSFET N-CH 800V 9A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock43,800	MOSFET (Metal Oxide)	800V	9A (Tc)	10V	4.5V @ 100µA	72nC @ 10V	2180pF @ 25V	±30V	-	160W (Tc)	900 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STP80NF03L-04	STMicroelectronics	MOSFET N-CH 30V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 40A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock818,580	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	2.5V @ 250µA	110nC @ 4.5V	5500pF @ 25V	±20V	-	300W (Tc)	4.5 mOhm @ 40A, 10V	175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STW14NK50Z	STMicroelectronics	MOSFET N-CH 500V 14A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock59,928	MOSFET (Metal Oxide)	500V	14A (Tc)	10V	4.5V @ 100µA	92nC @ 10V	2000pF @ 25V	±30V	-	150W (Tc)	380 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STB28NM50N	STMicroelectronics	MOSFET N-CH 500V 21A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 158 mOhm @ 10.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock14,892	MOSFET (Metal Oxide)	500V	21A (Tc)	10V	4V @ 250µA	50nC @ 10V	1735pF @ 25V	±25V	-	150W (Tc)	158 mOhm @ 10.5A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STP33N65M2	STMicroelectronics	MOSFET N-CH 650V 24A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 12A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock18,804	MOSFET (Metal Oxide)	650V	24A (Tc)	10V	4V @ 250µA	41.5nC @ 10V	1790pF @ 100V	±25V	-	190W (Tc)	140 mOhm @ 12A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3