Page 30 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STP130N10F3
STMicroelectronics

MOSFET N-CH 100V 120A TO-220

Package: TO-220-3

Stock55,200
STI16N65M5
STMicroelectronics

MOSFET N-CH 650V 12A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock20,364
STP12N65M5
STMicroelectronics

MOSFET N-CH 650V 8.5A TO-220

Package: TO-220-3

Stock16,158
STP140N8F7
STMicroelectronics

MOSFET N-CH 80V 90A TO-220

Package: TO-220-3

Stock48,000
STP18N65M5
STMicroelectronics

MOSFET N-CH 650V 15A TO-220

Package: TO-220-3

Stock6,672
STU8N80K5
STMicroelectronics

MOSFET N CH 800V 6A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock27,528
STP10NK70ZFP
STMicroelectronics

MOSFET N-CH 700V 8.6A TO-220FP

Package: TO-220-3 Full Pack

Stock197,028
STP15NM65N
STMicroelectronics

MOSFET N-CH 650V 12A TO-220

Package: TO-220-3

Stock72,720
STP17NK40ZFP
STMicroelectronics

MOSFET N-CH 400V 15A TO-220FP

Package: TO-220-3 Full Pack

Stock492,804
STP14NK50Z
STMicroelectronics

MOSFET N-CH 500V 14A TO-220

Package: TO-220-3

Stock17,172
STI24N60M2
STMicroelectronics

MOSFET N-CH 600V 18A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock21,516
STFI13N60M2
STMicroelectronics

MOSFET N-CH 600V I2PAK-FP

Package: TO-262-3 Full Pack, I2Pak

Stock9,252
STB180N55F3
STMicroelectronics

MOSFET N-CH 55V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock19,632
STI21N65M5
STMicroelectronics

MOSFET N-CH 650V 17A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,648
STP19NM50N
STMicroelectronics

MOSFET N-CH 500V 14A TO-220

Package: TO-220-3

Stock17,412
STF18N55M5
STMicroelectronics

MOSFET N-CH 550V 13A TO220FP

Package: TO-220-3 Full Pack

Stock3,728
STW7N105K5
STMicroelectronics

MOSFET N-CH 1050V 4A TO-247

Package: TO-247-3

Stock12,732
STF45N10F7
STMicroelectronics

MOSFET N-CH 100V 30A TO-220FP

Package: TO-220-3 Full Pack

Stock18,672
STF33N65M2
STMicroelectronics

MOSFET N-CH 650V 24A TO220FP

Package: TO-220-3 Full Pack

Stock16,548
STB22NM60N
STMicroelectronics

MOSFET N-CH 600V 16A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock116,040

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STP130N10F3	STMicroelectronics	MOSFET N-CH 100V 120A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3305pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock55,200	MOSFET (Metal Oxide)	100V	120A (Tc)	10V	4V @ 250µA	57nC @ 10V	3305pF @ 25V	±20V	-	250W (Tc)	9.6 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
STI16N65M5	STMicroelectronics	MOSFET N-CH 650V 12A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 279 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock20,364	MOSFET (Metal Oxide)	650V	12A (Tc)	10V	5V @ 250µA	31nC @ 10V	1250pF @ 100V	±25V	-	90W (Tc)	279 mOhm @ 6A, 10V	150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STP12N65M5	STMicroelectronics	MOSFET N-CH 650V 8.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 430 mOhm @ 4.3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock16,158	MOSFET (Metal Oxide)	650V	8.5A (Tc)	10V	5V @ 250µA	22nC @ 10V	900pF @ 100V	±25V	-	70W (Tc)	430 mOhm @ 4.3A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP140N8F7	STMicroelectronics	MOSFET N-CH 80V 90A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6340pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock48,000	MOSFET (Metal Oxide)	80V	90A (Tc)	10V	4.5V @ 250µA	96nC @ 10V	6340pF @ 40V	±20V	-	200W (Tc)	4.3 mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
STP18N65M5	STMicroelectronics	MOSFET N-CH 650V 15A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock6,672	MOSFET (Metal Oxide)	650V	15A (Tc)	10V	5V @ 250µA	31nC @ 10V	1240pF @ 100V	±25V	-	110W (Tc)	220 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STU8N80K5	STMicroelectronics	MOSFET N CH 800V 6A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock27,528	MOSFET (Metal Oxide)	800V	6A (Tc)	10V	5V @ 100µA	16.5nC @ 10V	450pF @ 100V	±30V	-	110W (Tc)	950 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251	TO-251-3 Short Leads, IPak, TO-251AA
STP10NK70ZFP	STMicroelectronics	MOSFET N-CH 700V 8.6A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock197,028	MOSFET (Metal Oxide)	700V	8.6A (Tc)	10V	4.5V @ 100µA	90nC @ 10V	2000pF @ 25V	±30V	-	35W (Tc)	850 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP15NM65N	STMicroelectronics	MOSFET N-CH 650V 12A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 983pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock72,720	MOSFET (Metal Oxide)	650V	12A (Tc)	10V	4V @ 250µA	33.3nC @ 10V	983pF @ 50V	±25V	-	125W (Tc)	380 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STP17NK40ZFP	STMicroelectronics	MOSFET N-CH 400V 15A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock492,804	MOSFET (Metal Oxide)	400V	15A (Tc)	10V	4.5V @ 100µA	65nC @ 10V	1900pF @ 25V	±30V	-	35W (Tc)	250 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP14NK50Z	STMicroelectronics	MOSFET N-CH 500V 14A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock17,172	MOSFET (Metal Oxide)	500V	14A (Tc)	10V	4.5V @ 100µA	92nC @ 10V	2000pF @ 25V	±30V	-	150W (Tc)	380 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STI24N60M2	STMicroelectronics	MOSFET N-CH 600V 18A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock21,516	MOSFET (Metal Oxide)	600V	18A (Tc)	10V	4V @ 250µA	29nC @ 10V	1060pF @ 100V	±25V	-	150W (Tc)	190 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STFI13N60M2	STMicroelectronics	MOSFET N-CH 600V I2PAK-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAKFP (TO-281) Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock9,252	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	4V @ 250µA	17nC @ 10V	580pF @ 100V	±25V	-	25W (Tc)	380 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAKFP (TO-281)	TO-262-3 Full Pack, I2Pak
STB180N55F3	STMicroelectronics	MOSFET N-CH 55V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock19,632	MOSFET (Metal Oxide)	55V	120A (Tc)	10V	4V @ 250µA	100nC @ 10V	6800pF @ 25V	±20V	-	330W (Tc)	3.5 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STI21N65M5	STMicroelectronics	MOSFET N-CH 650V 17A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 179 mOhm @ 8.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,648	MOSFET (Metal Oxide)	650V	17A (Tc)	10V	5V @ 250µA	50nC @ 10V	1950pF @ 100V	±25V	-	125W (Tc)	179 mOhm @ 8.5A, 10V	150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STP19NM50N	STMicroelectronics	MOSFET N-CH 500V 14A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock17,412	MOSFET (Metal Oxide)	500V	14A (Tc)	10V	4V @ 250µA	34nC @ 10V	1000pF @ 50V	±25V	-	110W (Tc)	250 mOhm @ 7A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STF18N55M5	STMicroelectronics	MOSFET N-CH 550V 13A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 192 mOhm @ 8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,728	MOSFET (Metal Oxide)	550V	16A (Tc)	10V	5V @ 250µA	31nC @ 10V	1260pF @ 100V	±25V	-	25W (Tc)	192 mOhm @ 8A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STW7N105K5	STMicroelectronics	MOSFET N-CH 1050V 4A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1050V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock12,732	MOSFET (Metal Oxide)	1050V	4A (Tc)	10V	5V @ 100µA	17nC @ 10V	380pF @ 100V	±30V	-	110W (Tc)	2 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STF45N10F7	STMicroelectronics	MOSFET N-CH 100V 30A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 50V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock18,672	MOSFET (Metal Oxide)	100V	30A (Tc)	10V	4.5V @ 250µA	25nC @ 10V	1640pF @ 50V	20V	-	25W (Tc)	18 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF33N65M2	STMicroelectronics	MOSFET N-CH 650V 24A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 12A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock16,548	MOSFET (Metal Oxide)	650V	24A (Tc)	10V	4V @ 250µA	41.5nC @ 10V	1790pF @ 100V	±25V	-	34W (Tc)	140 mOhm @ 12A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STB22NM60N	STMicroelectronics	MOSFET N-CH 600V 16A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock116,040	MOSFET (Metal Oxide)	600V	16A (Tc)	10V	4V @ 100µA	44nC @ 10V	1300pF @ 50V	±30V	-	125W (Tc)	220 mOhm @ 8A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STFW1N105K3	STMicroelectronics	MOSFET N-CH 1050V 1.4A TO3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1050V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 11 Ohm @ 600mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock19,368	MOSFET (Metal Oxide)	1050V	1.4A (Tc)	10V	4.5V @ 50µA	13nC @ 10V	180pF @ 100V	±30V	-	20W (Tc)	11 Ohm @ 600mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
STP100NF04	STMicroelectronics	MOSFET N-CH 40V 120A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock407,376	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	4V @ 250µA	150nC @ 10V	5100pF @ 25V	±20V	-	300W (Tc)	4.6 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STI14NM50N	STMicroelectronics	MOSFET N CH 500V 12A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 816pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock20,784	MOSFET (Metal Oxide)	500V	12A (Tc)	10V	4V @ 100µA	27nC @ 10V	816pF @ 50V	±25V	-	90W (Tc)	320 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STP80NF10FP	STMicroelectronics	MOSFET N-CH 100V 38A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 189nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock405,864	MOSFET (Metal Oxide)	100V	38A (Tc)	10V	4V @ 250µA	189nC @ 10V	4300pF @ 25V	±20V	-	45W (Tc)	15 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STFI13NK60Z	STMicroelectronics	MOSFET N-CH 600V 13A I2PAK FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2030pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAKFP (TO-281) Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock15,144	MOSFET (Metal Oxide)	600V	13A (Tc)	10V	4.5V @ 100µA	92nC @ 10V	2030pF @ 25V	±30V	-	35W (Tc)	550 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAKFP (TO-281)	TO-262-3 Full Pack, I2Pak
STF24N65M2	STMicroelectronics	MOSFET N-CH 650V 16A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock19,644	MOSFET (Metal Oxide)	650V	16A (Tc)	10V	4V @ 250µA	29nC @ 10V	1060pF @ 100V	±25V	-	30W (Tc)	230 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STB80NF55L-08-1	STMicroelectronics	MOSFET N-CH 55V 80A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 40A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock196,248	MOSFET (Metal Oxide)	55V	80A (Tc)	5V, 10V	2.5V @ 250µA	100nC @ 4.5V	4350pF @ 25V	±16V	-	300W (Tc)	8 mOhm @ 40A, 10V	175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STP24N65M2	STMicroelectronics	MOSFET N-CH 650V 16A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock21,888	MOSFET (Metal Oxide)	650V	16A (Tc)	10V	4V @ 250µA	29nC @ 10V	1060pF @ 100V	±25V	-	150W (Tc)	230 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3