Page 28 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STU8NM50N
STMicroelectronics

MOSFET N-CH 500V 5A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock21,444
STB32NM50N
STMicroelectronics

MOSFET N CH 500V 22A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock20,628
STP78N75F4
STMicroelectronics

MOSFET N-CH 75V 78A TO220

Package: TO-220-3

Stock12,792
STL100N6LF6
STMicroelectronics

MOSFET N CH 60V 100A PWRFLAT 5X6

Package: 8-PowerSMD, Flat Leads

Stock22,086
STFI4N62K3
STMicroelectronics

MOSFET N CH 620V 3.8A I2PAKFP

Package: TO-262-3 Full Pack, I2Pak

Stock17,256
STU5N62K3
STMicroelectronics

MOSFET N-CH 620V 4.2A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock26,826
STL25N15F3
STMicroelectronics

MOSFET N-CH 150V 6A POWERFLAT

Package: 8-PowerVDFN

Stock22,032
STP9N65M2
STMicroelectronics

MOSFET N-CH 650V 5A TO-220AB

Package: TO-220-3

Stock22,248
STP3NK60ZFP
STMicroelectronics

MOSFET N-CH 600V 2.4A TO-220FP

Package: TO-220-3 Full Pack

Stock295,560
STD3NK80Z-1
STMicroelectronics

MOSFET N-CH 800V 2.5A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock229,200
STP77N6F6
STMicroelectronics

MOSFET N CH 60V 77A TO-220

Package: TO-220-3

Stock1,620,000
STP75N3LLH6
STMicroelectronics

MOSFET N-CH 30V 75A TO-220AB

Package: TO-220-3

Stock49,008
STP4N52K3
STMicroelectronics

MOSFET N-CH 525V 2.5A TO220

Package: TO-220-3

Stock34,482
STF2N62K3
STMicroelectronics

MOSFET N-CH 620V 2.2A TO-220FP

Package: TO-220-3 Full Pack

Stock6,400
STP3NK60Z
STMicroelectronics

MOSFET N-CH 600V 2.4A TO-220

Package: TO-220-3

Stock108,564
STF7N60M2
STMicroelectronics

MOSFET N-CH 600V TO-220FP

Package: TO-220-3 Full Pack

Stock27,174
STF2N80K5
STMicroelectronics

MOSFET N-CH 800V 2A TO220FP

Package: TO-220-3 Full Pack

Stock14,982
STP35NF10
STMicroelectronics

MOSFET N-CH 100V 40A TO-220

Package: TO-220-3

Stock405,984
STU7N60M2
STMicroelectronics

MOSFET N-CH 600V IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock18,366
STK820
STMicroelectronics

MOSFET N-CH 25V 21A POLARPAK

Package: PolarPak?

Stock27,612

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STU8NM50N	STMicroelectronics	MOSFET N-CH 500V 5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 364pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 790 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock21,444	MOSFET (Metal Oxide)	500V	5A (Tc)	10V	4V @ 250µA	14nC @ 10V	364pF @ 50V	±25V	-	45W (Tc)	790 mOhm @ 2.5A, 10V	150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STB32NM50N	STMicroelectronics	MOSFET N CH 500V 22A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1973pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 11A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock20,628	MOSFET (Metal Oxide)	500V	22A (Tc)	10V	4V @ 250µA	62.5nC @ 10V	1973pF @ 50V	±25V	-	190W (Tc)	130 mOhm @ 11A, 10V	150°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STP78N75F4	STMicroelectronics	MOSFET N-CH 75V 78A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5015pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 39A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock12,792	MOSFET (Metal Oxide)	75V	78A (Tc)	10V	4V @ 250µA	76nC @ 10V	5015pF @ 25V	±20V	-	150W (Tc)	11 mOhm @ 39A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STL100N6LF6	STMicroelectronics	MOSFET N CH 60V 100A PWRFLAT 5X6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.8W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock22,086	MOSFET (Metal Oxide)	60V	100A (Tc)	4.5V, 10V	2.5V @ 250µA	130nC @ 10V	8900pF @ 25V	±20V	-	4.8W (Tc)	4.5 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerSMD, Flat Leads
STFI4N62K3	STMicroelectronics	MOSFET N CH 620V 3.8A I2PAKFP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAKFP (TO-281) Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock17,256	MOSFET (Metal Oxide)	620V	3.8A (Tc)	10V	4.5V @ 50µA	22nC @ 10V	550pF @ 50V	±30V	-	25W (Tc)	2 Ohm @ 1.9A, 10V	150°C (TJ)	Through Hole	I2PAKFP (TO-281)	TO-262-3 Full Pack, I2Pak
STU5N62K3	STMicroelectronics	MOSFET N-CH 620V 4.2A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock26,826	MOSFET (Metal Oxide)	620V	4.2A (Tc)	10V	4.5V @ 50µA	26nC @ 10V	680pF @ 50V	±30V	-	70W (Tc)	1.6 Ohm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STL25N15F3	STMicroelectronics	MOSFET N-CH 150V 6A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 57 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (6x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock22,032	MOSFET (Metal Oxide)	150V	25A (Tc)	10V	4V @ 250µA	29nC @ 10V	1300pF @ 25V	±20V	-	80W (Tc)	57 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (6x5)	8-PowerVDFN
STP9N65M2	STMicroelectronics	MOSFET N-CH 650V 5A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock22,248	MOSFET (Metal Oxide)	650V	5A (Tc)	10V	4V @ 250µA	10nC @ 10V	315pF @ 100V	±25V	-	60W (Tc)	900 mOhm @ 2.5A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
STP3NK60ZFP	STMicroelectronics	MOSFET N-CH 600V 2.4A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 311pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock295,560	MOSFET (Metal Oxide)	600V	2.4A (Tc)	10V	4.5V @ 50µA	11.8nC @ 10V	311pF @ 25V	±30V	-	20W (Tc)	3.6 Ohm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STD3NK80Z-1	STMicroelectronics	MOSFET N-CH 800V 2.5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock229,200	MOSFET (Metal Oxide)	800V	2.5A (Tc)	10V	4.5V @ 50µA	19nC @ 10V	485pF @ 25V	±30V	-	70W (Tc)	4.5 Ohm @ 1.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STP77N6F6	STMicroelectronics	MOSFET N CH 60V 77A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 38.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock1,620,000	MOSFET (Metal Oxide)	60V	77A (Tc)	10V	4V @ 250µA	76nC @ 10V	5300pF @ 25V	±20V	-	80W (Tc)	7 mOhm @ 38.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
STP75N3LLH6	STMicroelectronics	MOSFET N-CH 30V 75A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2030pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 37.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock49,008	MOSFET (Metal Oxide)	30V	75A (Tc)	4.5V, 10V	2.5V @ 250µA	23.8nC @ 4.5V	2030pF @ 25V	±20V	-	60W (Tc)	5.9 mOhm @ 37.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
STP4N52K3	STMicroelectronics	MOSFET N-CH 525V 2.5A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 525V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 334pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 1.25A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock34,482	MOSFET (Metal Oxide)	525V	2.5A (Tc)	10V	4.5V @ 50µA	11nC @ 10V	334pF @ 100V	±30V	-	45W (Tc)	2.6 Ohm @ 1.25A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
STF2N62K3	STMicroelectronics	MOSFET N-CH 620V 2.2A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,400	MOSFET (Metal Oxide)	620V	2.2A (Tc)	10V	4.5V @ 50µA	15nC @ 10V	340pF @ 50V	±30V	-	20W (Tc)	3.6 Ohm @ 1.1A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP3NK60Z	STMicroelectronics	MOSFET N-CH 600V 2.4A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 311pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock108,564	MOSFET (Metal Oxide)	600V	2.4A (Tc)	10V	4.5V @ 50µA	11.8nC @ 10V	311pF @ 25V	±30V	-	45W (Tc)	3.6 Ohm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STF7N60M2	STMicroelectronics	MOSFET N-CH 600V TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock27,174	MOSFET (Metal Oxide)	600V	5A (Tc)	10V	4V @ 250µA	8.8nC @ 10V	271pF @ 100V	±25V	-	20W (Tc)	950 mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF2N80K5	STMicroelectronics	MOSFET N-CH 800V 2A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 100V Vgs (Max): 30V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock14,982	MOSFET (Metal Oxide)	800V	2A (Tc)	10V	5V @ 100µA	3nC @ 10V	95pF @ 100V	30V	-	20W (Tc)	4.5 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP35NF10	STMicroelectronics	MOSFET N-CH 100V 40A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 17.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock405,984	MOSFET (Metal Oxide)	100V	40A (Tc)	10V	4V @ 250µA	55nC @ 10V	1550pF @ 25V	±20V	-	115W (Tc)	35 mOhm @ 17.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STU7N60M2	STMicroelectronics	MOSFET N-CH 600V IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock18,366	MOSFET (Metal Oxide)	600V	5A (Tc)	10V	4V @ 250µA	8.8nC @ 10V	271pF @ 100V	±25V	-	60W (Tc)	950 mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STK820	STMicroelectronics	MOSFET N-CH 25V 21A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 5.2W (Ta) Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 10.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PolarPak? Package / Case: PolarPak?	Package: PolarPak?	Stock27,612	MOSFET (Metal Oxide)	25V	21A (Ta)	4.5V, 10V	2.5V @ 250µA	9.5nC @ 4.5V	1425pF @ 25V	±16V	-	5.2W (Ta)	7.3 mOhm @ 10.5A, 10V	150°C (TJ)	Surface Mount	PolarPak?	PolarPak?
STI6N62K3	STMicroelectronics	MOSFET N-CH 620V 5.5A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 875pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock15,732	MOSFET (Metal Oxide)	620V	5.5A (Tc)	10V	4.5V @ 50µA	34nC @ 10V	875pF @ 50V	±30V	-	90W (Tc)	1.2 Ohm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STI55NF03L	STMicroelectronics	MOSFET N-CH 30V 55A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1265pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 27.5A, 10V Operating Temperature: -60°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock16,356	MOSFET (Metal Oxide)	30V	55A (Tc)	4.5V, 10V	2.5V @ 250µA	27nC @ 4.5V	1265pF @ 25V	±16V	-	80W (Tc)	13 mOhm @ 27.5A, 10V	-60°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STP2N62K3	STMicroelectronics	MOSFET N-CH 620V 2.2A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock7,600	MOSFET (Metal Oxide)	620V	2.2A (Tc)	10V	4.5V @ 50µA	15nC @ 10V	340pF @ 50V	±30V	-	45W (Tc)	3.6 Ohm @ 1.1A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
STD4NK50Z-1	STMicroelectronics	MOSFET N-CH 500V 3A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock466,656	MOSFET (Metal Oxide)	500V	3A (Tc)	10V	4.5V @ 50µA	12nC @ 10V	310pF @ 25V	±30V	-	45W (Tc)	2.7 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STF2NK60Z	STMicroelectronics	MOSFET N-CH 600V 1.4A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 8 Ohm @ 700mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock9,696	MOSFET (Metal Oxide)	600V	1.4A (Tc)	10V	4.5V @ 50µA	10nC @ 10V	170pF @ 25V	±30V	-	20W (Tc)	8 Ohm @ 700mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STU3LN62K3	STMicroelectronics	MOSFET N-CH 620V 2.5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 386pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.25A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock12,732	MOSFET (Metal Oxide)	620V	2.5A (Tc)	10V	4.5V @ 50µA	17nC @ 10V	386pF @ 50V	±30V	-	45W (Tc)	3 Ohm @ 1.25A, 10V	150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STB8NM60D	STMicroelectronics	MOSFET N-CH 600V 8A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,824	MOSFET (Metal Oxide)	600V	8A (Tc)	10V	5V @ 250µA	18nC @ 10V	380pF @ 25V	±30V	-	100W (Tc)	1 Ohm @ 2.5A, 10V	-65°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STS5N15F3	STMicroelectronics	MOSFET N-CH 150V 5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock33,576	MOSFET (Metal Oxide)	150V	5A (Tc)	10V	4V @ 250µA	29nC @ 10V	1300pF @ 25V	±20V	-	2.5W (Tc)	57 mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)