Page 36 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STD180N4F6
STMicroelectronics

N-CHANNEL 40 V, 3.8 MOHM TYP., 1

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,544
STD3NK90ZT4
STMicroelectronics

MOSFET N-CH 900V 3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock858,816
STD30N10F7
STMicroelectronics

MOSFET N-CH 100V 30A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock123,300
STD12N65M2
STMicroelectronics

MOSFET N-CH 650V 8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,928
STD40NF3LLT4
STMicroelectronics

MOSFET N-CH 30V 40A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock572,580
STB80N4F6AG
STMicroelectronics

MOSFET N-CH 40V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock20,784
STB3N62K3
STMicroelectronics

MOSFET N-CH 620V 2.7A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,232
STD6N65M2
STMicroelectronics

MOSFET N-CH 650V 4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,360
STD4N62K3
STMicroelectronics

MOSFET N-CH 620V 3.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock72,408
STD110N8F6
STMicroelectronics

MOSFET N-CH 80V 80A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,992
STD52P3LLH6
STMicroelectronics

MOSFET P-CH 30V 52A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,360
STL50NH3LL
STMicroelectronics

MOSFET N-CH 30V 27A PWRFLAT6X5

Package: 8-PowerVDFN

Stock990,720
STS10P3LLH6
STMicroelectronics

MOSFET P-CH 30V 10A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,184
STB45NF06T4
STMicroelectronics

MOSFET N-CH 60V 38A D2PAK

Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Stock44,748
STD11N60DM2
STMicroelectronics

N-CHANNEL 600 V, 0.26 OHM TYP.,

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,048
STL6P3LLH6
STMicroelectronics

MOSFET P-CH 30V 6A POWERFLAT

Package: 8-PowerVDFN

Stock2,160
STD25NF10T4
STMicroelectronics

MOSFET N-CH 100V 25A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock602,496
STD10N60DM2
STMicroelectronics

N-CHANNEL 600 V, 0.26 OHM TYP.,

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,792
STD140N6F7
STMicroelectronics

N-CHANNEL 60 V, 0.0031 OHM TYP.,

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock59,100
STL30N10F7
STMicroelectronics

MOSFET N-CH 100V 8A POWERFLAT

Package: 8-PowerVDFN

Stock5,968

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STD180N4F6	STMicroelectronics	N-CHANNEL 40 V, 3.8 MOHM TYP., 1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7735pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,544	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4.5V @ 250µA	130nC @ 10V	7735pF @ 25V	±20V	-	130W (Tc)	2.8 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STD3NK90ZT4	STMicroelectronics	MOSFET N-CH 900V 3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 22.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 4.8 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock858,816	MOSFET (Metal Oxide)	900V	3A (Tc)	10V	4.5V @ 50µA	22.7nC @ 10V	590pF @ 25V	±30V	-	90W (Tc)	4.8 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STD30N10F7	STMicroelectronics	MOSFET N-CH 100V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 50V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock123,300	MOSFET (Metal Oxide)	100V	32A (Tc)	10V	4.5V @ 250µA	19nC @ 10V	1270pF @ 50V	20V	-	50W (Tc)	24 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STD12N65M2	STMicroelectronics	MOSFET N-CH 650V 8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,928	MOSFET (Metal Oxide)	650V	8A (Tc)	10V	4V @ 250µA	16.5nC @ 10V	535pF @ 100V	±25V	-	85W (Tc)	500 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STD40NF3LLT4	STMicroelectronics	MOSFET N-CH 30V 40A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock572,580	MOSFET (Metal Oxide)	30V	40A (Tc)	4.5V, 10V	1V @ 250µA	33nC @ 4.5V	1650pF @ 25V	±16V	-	80W (Tc)	11 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STB80N4F6AG	STMicroelectronics	MOSFET N-CH 40V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock20,784	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 250µA	36nC @ 10V	2150pF @ 25V	±20V	-	70W (Tc)	6 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB3N62K3	STMicroelectronics	MOSFET N-CH 620V 2.7A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 385pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,232	MOSFET (Metal Oxide)	620V	2.7A (Tc)	10V	4.5V @ 50µA	13nC @ 10V	385pF @ 25V	±30V	-	45W (Tc)	2.5 Ohm @ 1.4A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STD6N65M2	STMicroelectronics	MOSFET N-CH 650V 4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 226pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,360	MOSFET (Metal Oxide)	650V	4A (Tc)	10V	4V @ 250µA	9.8nC @ 10V	226pF @ 100V	±25V	-	60W (Tc)	1.35 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STD4N62K3	STMicroelectronics	MOSFET N-CH 620V 3.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 1.95 Ohm @ 1.9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock72,408	MOSFET (Metal Oxide)	620V	3.8A (Tc)	10V	4.5V @ 50µA	14nC @ 10V	450pF @ 50V	±30V	-	70W (Tc)	1.95 Ohm @ 1.9A, 10V	150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STD110N8F6	STMicroelectronics	MOSFET N-CH 80V 80A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9130pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,992	MOSFET (Metal Oxide)	80V	80A (Tc)	10V	4.5V @ 250µA	150nC @ 10V	9130pF @ 40V	±20V	-	167W (Tc)	6.5 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STD52P3LLH6	STMicroelectronics	MOSFET P-CH 30V 52A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 26A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,360	MOSFET (Metal Oxide)	30V	52A (Tc)	4.5V, 10V	2.5V @ 250µA	33nC @ 4.5V	3350pF @ 25V	±20V	-	70W (Tc)	12 mOhm @ 26A, 10V	175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STL50NH3LL	STMicroelectronics	MOSFET N-CH 30V 27A PWRFLAT6X5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 965pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (6x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock990,720	MOSFET (Metal Oxide)	30V	27A (Tc)	4.5V, 10V	1V @ 250µA	12nC @ 4.5V	965pF @ 25V	±16V	-	60W (Tc)	13 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (6x5)	8-PowerVDFN
STS10P3LLH6	STMicroelectronics	MOSFET P-CH 30V 10A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.7W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,184	MOSFET (Metal Oxide)	30V	10A (Ta)	4.5V, 10V	1V @ 250µA (Min)	33nC @ 4.5V	3350pF @ 25V	±20V	-	2.7W (Ta)	12 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STB45NF06T4	STMicroelectronics	MOSFET N-CH 60V 38A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 19A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	Stock44,748	MOSFET (Metal Oxide)	60V	38A (Tc)	10V	4V @ 250µA	58nC @ 10V	980pF @ 25V	±20V	-	80W (Tc)	28 mOhm @ 19A, 10V	175°C (TJ)	Surface Mount	D2PAK	TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
STD11N60DM2	STMicroelectronics	N-CHANNEL 600 V, 0.26 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 614pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,048	MOSFET (Metal Oxide)	650V	10A (Tc)	10V	5V @ 250µA	16.5nC @ 10V	614pF @ 100V	±25V	-	110W (Tc)	420 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STL6P3LLH6	STMicroelectronics	MOSFET P-CH 30V 6A POWERFLAT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.9W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (3.3x3.3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock2,160	MOSFET (Metal Oxide)	30V	6A (Tc)	4.5V, 10V	1V @ 250µA (Min)	12nC @ 4.5V	1450pF @ 25V	±20V	-	2.9W (Tc)	30 mOhm @ 3A, 10V	150°C (TJ)	Surface Mount	PowerFlat? (3.3x3.3)	8-PowerVDFN
STD25NF10T4	STMicroelectronics	MOSFET N-CH 100V 25A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 38 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock602,496	MOSFET (Metal Oxide)	100V	25A (Tc)	10V	4V @ 250µA	55nC @ 10V	1550pF @ 25V	±20V	-	100W (Tc)	38 mOhm @ 12.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STD10N60DM2	STMicroelectronics	N-CHANNEL 600 V, 0.26 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 529pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 109W (Tc) Rds On (Max) @ Id, Vgs: 530 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,792	MOSFET (Metal Oxide)	650V	8A (Tc)	10V	5V @ 250µA	15nC @ 10V	529pF @ 100V	±25V	-	109W (Tc)	530 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STD140N6F7	STMicroelectronics	N-CHANNEL 60 V, 0.0031 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 134W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock59,100	MOSFET (Metal Oxide)	60V	80A (Tc)	10V	4V @ 250µA	55nC @ 10V	3100pF @ 30V	±20V	-	134W (Tc)	3.8 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STL30N10F7	STMicroelectronics	MOSFET N-CH 100V 8A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock5,968	MOSFET (Metal Oxide)	100V	30A (Tc)	10V	4.5V @ 250µA	14nC @ 10V	920pF @ 50V	±20V	-	75W (Tc)	35 mOhm @ 4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerVDFN
STD25NF10LT4	STMicroelectronics	MOSFET N-CH 100V 25A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,212,912	MOSFET (Metal Oxide)	100V	25A (Tc)	4.5V, 10V	2.5V @ 250µA	52nC @ 5V	1710pF @ 25V	±16V	-	100W (Tc)	35 mOhm @ 12.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STD35NF06LT4	STMicroelectronics	MOSFET N-CH 60V 35A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 17.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,598,280	MOSFET (Metal Oxide)	60V	35A (Tc)	4.5V, 10V	1V @ 250µA	33nC @ 4.5V	1700pF @ 25V	±16V	-	80W (Tc)	17 mOhm @ 17.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STD2NK90ZT4	STMicroelectronics	MOSFET N-CH 900V 2.1A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 6.5 Ohm @ 1.05A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock240,192	MOSFET (Metal Oxide)	900V	2.1A (Tc)	10V	4.5V @ 50µA	27nC @ 10V	485pF @ 25V	±30V	-	70W (Tc)	6.5 Ohm @ 1.05A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STB6N60M2	STMicroelectronics	MOSFET N-CH 600V D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 232pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock8,352	MOSFET (Metal Oxide)	600V	4.5A (Tc)	10V	4V @ 250µA	8nC @ 10V	232pF @ 100V	±25V	-	60W (Tc)	1.2 Ohm @ 2.25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STR2N2VH5	STMicroelectronics	MOSFET N-CH 20V 2.3A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 367pF @ 16V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 350mW (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock330,000	MOSFET (Metal Oxide)	20V	-	2.5V, 4.5V	700mV @ 250µA (Min)	4.6nC @ 4.5V	367pF @ 16V	±8V	-	350mW (Tc)	30 mOhm @ 2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
STD5N80K5	STMicroelectronics	N-CHANNEL 800 V, 1.50 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,016	MOSFET (Metal Oxide)	800V	4A (Tc)	10V	5V @ 100µA	5nC @ 10V	177pF @ 100V	±30V	-	60W (Tc)	1.75 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STD11N60M2-EP	STMicroelectronics	N-CHANNEL 600 V, 0.550 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 595 mOhm @ 3.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,552	MOSFET (Metal Oxide)	600V	7.5A (Tc)	10V	4V @ 250µA	12.4nC @ 10V	390pF @ 100V	±25V	-	85W (Tc)	595 mOhm @ 3.75A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STL110NS3LLH7	STMicroelectronics	MOSFET N-CH 30V 120A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock6,672	MOSFET (Metal Oxide)	30V	120A (Tc)	4.5V, 10V	2.3V @ 1mA	13.7nC @ 4.5V	2110pF @ 25V	±20V	-	4W (Ta), 75W (Tc)	3.4 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerSMD, Flat Leads