Page 37 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STL260N3LLH6
STMicroelectronics

MOSFET N-CH 30V 260A POWERFLAT

Package: 8-PowerSMD, Flat Leads

Stock6,992
STL7LN80K5
STMicroelectronics

MOSFET N-CH 800V 5A POWERFLAT

Package: 8-PowerVDFN

Stock2,608
STB19NF20
STMicroelectronics

MOSFET N-CH 200V 15A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock1,050,636
STB35NF10T4
STMicroelectronics

MOSFET N-CH 100V 40A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock31,968
STL90N6F7
STMicroelectronics

MOSFET N-CH 60V 90A F7 8PWRFLAT

Package: 8-PowerSMD, Flat Leads

Stock3,536
STL13N60DM2
STMicroelectronics

N-CHANNEL 600 V, 0.350 OHM TYP.,

Package: 8-PowerVDFN

Stock4,096
STL150N3LLH5
STMicroelectronics

MOSFET N-CH 30V 35A POWERFLAT6X5

Package: 8-PowerVDFN

Stock3,461,892
STL8N10F7
STMicroelectronics

MOSFET N-CH 100V 8A 8POWERFLAT

Package: 8-PowerVDFN

Stock7,200
STL160NS3LLH7
STMicroelectronics

MOSFET N-CH 30V 160A POWERFLAT56

Package: 8-PowerVDFN

Stock4,256
STL13N65M2
STMicroelectronics

MOSFET N-CH 650V 6.5A POWERFLAT

Package: 8-PowerVDFN

Stock3,264
STD8NM50N
STMicroelectronics

MOSFET N-CH 500V 5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock493,920
STL7N10F7
STMicroelectronics

MOSFET N-CH 100V 7A 8POWERFLAT

Package: 8-PowerVDFN

Stock7,776
STB6N80K5
STMicroelectronics

MOSFET N-CH 800V 4.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock18,612
STD80N6F6
STMicroelectronics

MOSFET N-CH 60V DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock134,412
STD20NF20
STMicroelectronics

MOSFET N-CH 200V 18A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,838,968
STD17NF25
STMicroelectronics

MOSFET N-CH 250V 17A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock480,252
STB60NF06LT4
STMicroelectronics

MOSFET N-CH 60V 60A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock174,048
STL3N10F7
STMicroelectronics

MOSFET N-CH 100V 4A POWERFLAT22

Package: 6-PowerWDFN

Stock3,216
STL4N10F7
STMicroelectronics

MOSFET N-CH 100V 4.5A 8PWRFLAT

Package: 8-PowerVDFN

Stock6,384
STD90N03L
STMicroelectronics

MOSFET N-CH 30V 80A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock183,756

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STL260N3LLH6	STMicroelectronics	MOSFET N-CH 30V 260A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 61.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6375pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 166W (Tc) Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 22.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock6,992	MOSFET (Metal Oxide)	30V	260A (Tc)	4.5V, 10V	1V @ 250µA (Min)	61.5nC @ 4.5V	6375pF @ 25V	±20V	-	166W (Tc)	1.3 mOhm @ 22.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerSMD, Flat Leads
STL7LN80K5	STMicroelectronics	MOSFET N-CH 800V 5A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 1.15 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock2,608	MOSFET (Metal Oxide)	800V	5A (Tc)	10V	5V @ 100µA	12nC @ 10V	270pF @ 100V	±30V	-	42W (Tc)	1.15 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerVDFN
STB19NF20	STMicroelectronics	MOSFET N-CH 200V 15A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock1,050,636	MOSFET (Metal Oxide)	200V	15A (Tc)	10V	4V @ 250µA	24nC @ 10V	800pF @ 25V	±20V	-	90W (Tc)	160 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB35NF10T4	STMicroelectronics	MOSFET N-CH 100V 40A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 17.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock31,968	MOSFET (Metal Oxide)	100V	40A (Tc)	10V	4V @ 250µA	55nC @ 10V	1550pF @ 25V	±20V	-	115W (Tc)	35 mOhm @ 17.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STL90N6F7	STMicroelectronics	MOSFET N-CH 60V 90A F7 8PWRFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.8W (Ta), 94W (Tc) Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 10.5A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock3,536	MOSFET (Metal Oxide)	60V	90A (Tc)	10V	4V @ 250µA	25nC @ 10V	1600pF @ 25V	±20V	-	4.8W (Ta), 94W (Tc)	5.4 mOhm @ 10.5A, 10V	175°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerSMD, Flat Leads
STL13N60DM2	STMicroelectronics	N-CHANNEL 600 V, 0.350 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 370 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock4,096	MOSFET (Metal Oxide)	600V	8A (Tc)	10V	5V @ 250µA	19nC @ 10V	730pF @ 100V	±25V	-	52W (Tc)	370 mOhm @ 4A, 10V	150°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerVDFN
STL150N3LLH5	STMicroelectronics	MOSFET N-CH 30V 35A POWERFLAT6X5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V Vgs (Max): ±22V FET Feature: - Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 1.75 mOhm @ 17.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (6x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock3,461,892	MOSFET (Metal Oxide)	30V	195A (Tc)	4.5V, 10V	2.2V @ 250µA	40nC @ 4.5V	5800pF @ 25V	±22V	-	114W (Tc)	1.75 mOhm @ 17.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (6x5)	8-PowerVDFN
STL8N10F7	STMicroelectronics	MOSFET N-CH 100V 8A 8POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (3.3x3.3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock7,200	MOSFET (Metal Oxide)	100V	-	10V	4.5V @ 250µA	22nC @ 10V	2000pF @ 50V	±20V	-	3.5W (Ta), 50W (Tc)	20 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (3.3x3.3)	8-PowerVDFN
STL160NS3LLH7	STMicroelectronics	MOSFET N-CH 30V 160A POWERFLAT56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3245pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 84W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock4,256	MOSFET (Metal Oxide)	30V	160A (Tc)	4.5V, 10V	2.3V @ 1mA	20nC @ 4.5V	3245pF @ 25V	±20V	-	84W (Tc)	2.1 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerVDFN
STL13N65M2	STMicroelectronics	MOSFET N-CH 650V 6.5A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 475 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock3,264	MOSFET (Metal Oxide)	650V	6.5A (Tc)	10V	4V @ 250µA	17nC @ 10V	590pF @ 100V	±25V	-	52W (Tc)	475 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerVDFN
STD8NM50N	STMicroelectronics	MOSFET N-CH 500V 5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 364pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 790 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock493,920	MOSFET (Metal Oxide)	500V	5A (Tc)	10V	4V @ 250µA	14nC @ 10V	364pF @ 50V	±25V	-	45W (Tc)	790 mOhm @ 2.5A, 10V	150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STL7N10F7	STMicroelectronics	MOSFET N-CH 100V 7A 8POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.9W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (3.3x3.3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock7,776	MOSFET (Metal Oxide)	100V	-	10V	4.5V @ 250µA	14nC @ 10V	920pF @ 50V	±20V	-	2.9W (Ta), 50W (Tc)	35 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (3.3x3.3)	8-PowerVDFN
STB6N80K5	STMicroelectronics	MOSFET N-CH 800V 4.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 100V Vgs (Max): 30V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock18,612	MOSFET (Metal Oxide)	800V	4.5A (Tc)	10V	5V @ 100µA	7.5nC @ 10V	255pF @ 100V	30V	-	85W (Tc)	1.6 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STD80N6F6	STMicroelectronics	MOSFET N-CH 60V DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7480pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock134,412	MOSFET (Metal Oxide)	60V	80A (Tc)	10V	4.5V @ 250µA	122nC @ 10V	7480pF @ 25V	±20V	-	120W (Tc)	6.5 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STD20NF20	STMicroelectronics	MOSFET N-CH 200V 18A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,838,968	MOSFET (Metal Oxide)	200V	18A (Tc)	10V	4V @ 250µA	39nC @ 10V	940pF @ 25V	±20V	-	110W (Tc)	125 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STD17NF25	STMicroelectronics	MOSFET N-CH 250V 17A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock480,252	MOSFET (Metal Oxide)	250V	17A (Tc)	10V	4V @ 250µA	29.5nC @ 10V	1000pF @ 25V	±20V	-	90W (Tc)	165 mOhm @ 8.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STB60NF06LT4	STMicroelectronics	MOSFET N-CH 60V 60A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 30A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock174,048	MOSFET (Metal Oxide)	60V	60A (Tc)	5V, 10V	1V @ 250µA	66nC @ 4.5V	2000pF @ 25V	±15V	-	110W (Tc)	14 mOhm @ 30A, 10V	-65°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STL3N10F7	STMicroelectronics	MOSFET N-CH 100V 4A POWERFLAT22 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 408pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (2x2) Package / Case: 6-PowerWDFN	Package: 6-PowerWDFN	Stock3,216	MOSFET (Metal Oxide)	100V	4A (Tc)	10V	4.5V @ 250µA	7.8nC @ 10V	408pF @ 25V	±20V	-	2.4W (Tc)	70 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (2x2)	6-PowerWDFN
STL4N10F7	STMicroelectronics	MOSFET N-CH 100V 4.5A 8PWRFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 408pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.9W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 2.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (3.3x3.3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock6,384	MOSFET (Metal Oxide)	100V	4.5A (Ta), 18A (Tc)	10V	4.5V @ 250µA	7.8nC @ 10V	408pF @ 50V	±20V	-	2.9W (Ta), 50W (Tc)	70 mOhm @ 2.25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (3.3x3.3)	8-PowerVDFN
STD90N03L	STMicroelectronics	MOSFET N-CH 30V 80A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2805pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 95W (Tc) Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock183,756	MOSFET (Metal Oxide)	30V	80A (Tc)	5V, 10V	1V @ 250µA	32nC @ 5V	2805pF @ 25V	±20V	-	95W (Tc)	5.7 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STD11N50M2	STMicroelectronics	MOSFET N-CH 500V 8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 530 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock22,548	MOSFET (Metal Oxide)	500V	8A (Tc)	10V	4V @ 250µA	12nC @ 10V	395pF @ 100V	±25V	-	85W (Tc)	530 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STD85N10F7AG	STMicroelectronics	MOSFET N-CH 100V 70A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,552	MOSFET (Metal Oxide)	100V	70A (Tc)	10V	4.5V @ 250µA	45nC @ 10V	3100pF @ 50V	±20V	-	85W (Tc)	10 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STL86N3LLH6AG	STMicroelectronics	MOSFET N-CH 30V 80A PWRFLAT56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2030pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock3,152	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	2.5V @ 250µA	17nC @ 4.5V	2030pF @ 25V	±20V	-	4W (Ta), 60W (Tc)	5.2 mOhm @ 10.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerVDFN
STL105NS3LLH7	STMicroelectronics	MOSFET N-CH 30V 27A PWRFLAT56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.2V @ 1mA (Min) Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock155,124	MOSFET (Metal Oxide)	30V	105A (Tc)	4.5V, 10V	1.2V @ 1mA (Min)	13.7nC @ 4.5V	2110pF @ 25V	±20V	-	62.5W (Tc)	3.9 mOhm @ 13.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerVDFN
STD13N60DM2	STMicroelectronics	N-CHANNEL 600 V, 0.310 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 365 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,256	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	5V @ 250µA	19nC @ 10V	730pF @ 100V	±25V	-	110W (Tc)	365 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STS13N3LLH5	STMicroelectronics	MOSFET N-CH 30V 13A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Vgs (Max): +22V, -20V FET Feature: - Power Dissipation (Max): 2.7W (Tc) Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock144,060	MOSFET (Metal Oxide)	30V	13A (Tc)	4.5V, 10V	1V @ 250µA	12nC @ 4.5V	1500pF @ 25V	+22V, -20V	-	2.7W (Tc)	6.6 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STL11N4LLF5	STMicroelectronics	MOSFET N-CH 40V 11A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.9W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (3.3x3.3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock3,728	MOSFET (Metal Oxide)	40V	11A (Tc)	4.5V, 10V	2.5V @ 250µA	12.9nC @ 4.5V	1570pF @ 25V	±20V	-	2.9W (Ta), 50W (Tc)	9.7 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (3.3x3.3)	8-PowerVDFN
STD45P4LLF6AG	STMicroelectronics	MOSFET P-CH 40V 50A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3525pF @ 25V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,872	MOSFET (Metal Oxide)	40V	50A (Tc)	4.5V, 10V	2.5V @ 250µA	65.5nC @ 10V	3525pF @ 25V	±18V	-	58W (Tc)	15 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63