Page 43 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STP80NF10
STMicroelectronics

MOSFET N-CH 100V 80A TO-220

Package: TO-220-3

Stock536,088
STP80NF55-06
STMicroelectronics

MOSFET N-CH 55V 80A TO-220

Package: TO-220-3

Stock160,584
STP100N10F7
STMicroelectronics

MOSFET N CH 100V 80A TO-220

Package: TO-220-3

Stock29,568
STP6NK90Z
STMicroelectronics

MOSFET N-CH 900V 5.8A TO-220

Package: TO-220-3

Stock21,180
STF17NF25
STMicroelectronics

MOSFET N-CH 250V 17A TO-220FP

Package: TO-220-3 Full Pack

Stock423,540
STP25N10F7
STMicroelectronics

MOSFET N-CH 100V 25A TO-220

Package: TO-220-3

Stock240,000
STP160N4LF6
STMicroelectronics

MOSFET N-CH 40V 120A TO220

Package: TO-220-3

Stock7,572
STP9NK50ZFP
STMicroelectronics

MOSFET N-CH 500V 7.2A TO-220FP

Package: TO-220-3 Full Pack

Stock764,160
STP75NS04Z
STMicroelectronics

MOSFET N-CH 33V 80A TO-220

Package: TO-220-3

Stock393,744
STP60NF06L
STMicroelectronics

MOSFET N-CH 60V 60A TO-220

Package: TO-220-3

Stock593,148
STP10P6F6
STMicroelectronics

MOSFET P CH 60V 10A TO-220

Package: TO-220-3

Stock889,188
STP55NF06L
STMicroelectronics

MOSFET N-CH 60V 55A TO-220

Package: TO-220-3

Stock814,104
STP30NF10
STMicroelectronics

MOSFET N-CH 100V 35A TO-220

Package: TO-220-3

Stock1,129,572
STP55NF06
STMicroelectronics

MOSFET N-CH 60V 50A TO-220

Package: TO-220-3

Stock687,696
STP27N3LH5
STMicroelectronics

MOSFET N-CH 30V 27A TO220

Package: TO-220-3

Stock120,720
STL42N65M5
STMicroelectronics

MOSFET N-CH 650V 4A PWRFLT8X8HV

Package: 4-PowerFlat? HV

Stock5,200
STB57N65M5
STMicroelectronics

MOSFET N-CH 650V 42A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,848
STB36NM60N
STMicroelectronics

MOSFET N-CH 600V 29A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,648
STH12N120K5-2
STMicroelectronics

MOSFET N-CH 1200V 12A H2PAK-2

Package: TO-263-3, D2Pak (2 Leads + Tab) Variant

Stock3,520
STB42N60M2-EP
STMicroelectronics

MOSFET N-CH 600V 34A EP D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,768

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STP80NF10	STMicroelectronics	MOSFET N-CH 100V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 182nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock536,088	MOSFET (Metal Oxide)	100V	80A (Tc)	10V	4V @ 250µA	182nC @ 10V	5500pF @ 25V	±20V	-	300W (Tc)	15 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP80NF55-06	STMicroelectronics	MOSFET N-CH 55V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 189nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock160,584	MOSFET (Metal Oxide)	55V	80A (Tc)	10V	4V @ 250µA	189nC @ 10V	4400pF @ 25V	±20V	-	300W (Tc)	6.5 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP100N10F7	STMicroelectronics	MOSFET N CH 100V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4369pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock29,568	MOSFET (Metal Oxide)	100V	80A (Tc)	10V	4.5V @ 250µA	61nC @ 10V	4369pF @ 50V	±20V	-	150W (Tc)	8 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
STP6NK90Z	STMicroelectronics	MOSFET N-CH 900V 5.8A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 60.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 2.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock21,180	MOSFET (Metal Oxide)	900V	5.8A (Tc)	10V	4.5V @ 100µA	60.5nC @ 10V	1350pF @ 25V	±30V	-	140W (Tc)	2 Ohm @ 2.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STF17NF25	STMicroelectronics	MOSFET N-CH 250V 17A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock423,540	MOSFET (Metal Oxide)	250V	17A (Tc)	10V	4V @ 250µA	29.5nC @ 10V	1000pF @ 25V	±20V	-	25W (Tc)	165 mOhm @ 8.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP25N10F7	STMicroelectronics	MOSFET N-CH 100V 25A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock240,000	MOSFET (Metal Oxide)	100V	25A (Tc)	10V	4.5V @ 250µA	14nC @ 10V	920pF @ 50V	±20V	-	50W (Tc)	35 mOhm @ 12.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
STP160N4LF6	STMicroelectronics	MOSFET N-CH 40V 120A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 181nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8130pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock7,572	MOSFET (Metal Oxide)	40V	120A (Tc)	5V, 10V	1V @ 250µA (Min)	181nC @ 10V	8130pF @ 20V	±20V	-	150W (Tc)	2.9 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
STP9NK50ZFP	STMicroelectronics	MOSFET N-CH 500V 7.2A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock764,160	MOSFET (Metal Oxide)	500V	7.2A (Tc)	10V	4.5V @ 100µA	32nC @ 10V	910pF @ 25V	±30V	-	30W (Tc)	850 mOhm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP75NS04Z	STMicroelectronics	MOSFET N-CH 33V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 33V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock393,744	MOSFET (Metal Oxide)	33V	80A (Tc)	10V	4V @ 250µA	50nC @ 10V	1860pF @ 25V	-	-	110W (Tc)	11 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP60NF06L	STMicroelectronics	MOSFET N-CH 60V 60A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 30A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock593,148	MOSFET (Metal Oxide)	60V	60A (Tc)	10V, 5V	1V @ 250µA	66nC @ 4.5V	2000pF @ 25V	±15V	-	110W (Tc)	14 mOhm @ 30A, 10V	-65°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP10P6F6	STMicroelectronics	MOSFET P CH 60V 10A TO-220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 48V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 5A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock889,188	MOSFET (Metal Oxide)	60V	10A (Tc)	10V	4V @ 250µA	6.4nC @ 10V	340pF @ 48V	±20V	-	30W (Tc)	160 mOhm @ 5A, 10V	175°C (TJ)	Through Hole	TO-220	TO-220-3
STP55NF06L	STMicroelectronics	MOSFET N-CH 60V 55A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 5V Vgs(th) (Max) @ Id: 1.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 95W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 27.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock814,104	MOSFET (Metal Oxide)	60V	55A (Tc)	10V, 5V	1.7V @ 250µA	37nC @ 4.5V	1700pF @ 25V	±16V	-	95W (Tc)	18 mOhm @ 27.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP30NF10	STMicroelectronics	MOSFET N-CH 100V 35A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock1,129,572	MOSFET (Metal Oxide)	100V	35A (Tc)	10V	4V @ 250µA	55nC @ 10V	1180pF @ 25V	±20V	-	115W (Tc)	45 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP55NF06	STMicroelectronics	MOSFET N-CH 60V 50A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 27.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock687,696	MOSFET (Metal Oxide)	60V	50A (Tc)	10V	4V @ 250µA	60nC @ 10V	1300pF @ 25V	±20V	-	110W (Tc)	18 mOhm @ 27.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP27N3LH5	STMicroelectronics	MOSFET N-CH 30V 27A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V Vgs (Max): ±22V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock120,720	MOSFET (Metal Oxide)	30V	27A (Tc)	4.5V, 10V	2.5V @ 250µA	4.6nC @ 5V	475pF @ 25V	±22V	-	45W (Tc)	20 mOhm @ 13.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STL42N65M5	STMicroelectronics	MOSFET N-CH 650V 4A PWRFLT8X8HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3W (Ta), 208W (Tc) Rds On (Max) @ Id, Vgs: 79 mOhm @ 16.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (8x8) HV Package / Case: 4-PowerFlat? HV	Package: 4-PowerFlat? HV	Stock5,200	MOSFET (Metal Oxide)	650V	4A (Ta), 34A (Tc)	10V	5V @ 250µA	100nC @ 10V	4650pF @ 100V	±25V	-	3W (Ta), 208W (Tc)	79 mOhm @ 16.5A, 10V	150°C (TJ)	Surface Mount	PowerFlat? (8x8) HV	4-PowerFlat? HV
STB57N65M5	STMicroelectronics	MOSFET N-CH 650V 42A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 63 mOhm @ 21A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,848	MOSFET (Metal Oxide)	650V	42A (Tc)	10V	5V @ 250µA	98nC @ 10V	4200pF @ 100V	±25V	-	250W (Tc)	63 mOhm @ 21A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB36NM60N	STMicroelectronics	MOSFET N-CH 600V 29A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 83.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2722pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 210W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 14.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,648	MOSFET (Metal Oxide)	600V	29A (Tc)	10V	4V @ 250µA	83.6nC @ 10V	2722pF @ 100V	±25V	-	210W (Tc)	105 mOhm @ 14.5A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STH12N120K5-2	STMicroelectronics	MOSFET N-CH 1200V 12A H2PAK-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 44.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 690 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2Pak-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant	Package: TO-263-3, D2Pak (2 Leads + Tab) Variant	Stock3,520	MOSFET (Metal Oxide)	1200V	12A (Tc)	10V	5V @ 100µA	44.2nC @ 10V	1370pF @ 100V	±30V	-	250W (Tc)	690 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	H2Pak-2	TO-263-3, D2Pak (2 Leads + Tab) Variant
STB42N60M2-EP	STMicroelectronics	MOSFET N-CH 600V 34A EP D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 87 mOhm @ 17A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,768	MOSFET (Metal Oxide)	600V	34A (Tc)	10V	4V @ 250µA	55nC @ 10V	2370pF @ 100V	±25V	-	250W (Tc)	87 mOhm @ 17A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB25N80K5	STMicroelectronics	MOSFET N-CH 800V 19.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 260 mOhm @ 19.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock36,600	MOSFET (Metal Oxide)	800V	19.5A (Tc)	10V	5V @ 100µA	40nC @ 10V	1600pF @ 100V	±30V	-	250W (Tc)	260 mOhm @ 19.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB34NM60ND	STMicroelectronics	MOSFET N-CH 600V 29A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2785pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 14.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock28,920	MOSFET (Metal Oxide)	600V	29A (Tc)	10V	5V @ 250µA	80.4nC @ 10V	2785pF @ 50V	±25V	-	190W (Tc)	110 mOhm @ 14.5A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STL45N65M5	STMicroelectronics	MOSFET N-CH 650V 22.5A 4PWRFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 22.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 160W (Tc) Rds On (Max) @ Id, Vgs: 86 mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFLAT? (8x8) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock6,848	MOSFET (Metal Oxide)	650V	3.8A (Ta), 22.5A (Tc)	10V	5V @ 250µA	82nC @ 10V	3470pF @ 100V	±25V	-	2.8W (Ta), 160W (Tc)	86 mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFLAT? (8x8)	8-PowerVDFN
STB38N65M5	STMicroelectronics	MOSFET N-CH 650V 30A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock45,768	MOSFET (Metal Oxide)	650V	30A (Tc)	10V	5V @ 250µA	71nC @ 10V	3000pF @ 100V	±25V	-	190W (Tc)	95 mOhm @ 15A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STL36N55M5	STMicroelectronics	MOSFET N-CH 550V 22.5A 4PWRFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2670pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 16.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (8x8) HV Package / Case: 4-PowerFlat? HV	Package: 4-PowerFlat? HV	Stock6,624	MOSFET (Metal Oxide)	550V	22.5A (Tc)	10V	5V @ 250µA	62nC @ 10V	2670pF @ 100V	±25V	-	2.8W (Ta), 150W (Tc)	90 mOhm @ 16.5A, 10V	150°C (TJ)	Surface Mount	PowerFlat? (8x8) HV	4-PowerFlat? HV
STL23NM60ND	STMicroelectronics	MOSFET N-CH 600V 19.5A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (8x8) HV Package / Case: 4-PowerFlat? HV	Package: 4-PowerFlat? HV	Stock9,552	MOSFET (Metal Oxide)	600V	19.5A (Tc)	10V	5V @ 250µA	70nC @ 10V	2050pF @ 50V	±25V	-	3W (Ta), 150W (Tc)	180 mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	PowerFlat? (8x8) HV	4-PowerFlat? HV
STH400N4F6-2	STMicroelectronics	MOSFET N-CH 40V 180A H2PAK-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 404nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.15 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant	Package: TO-263-3, D2Pak (2 Leads + Tab) Variant	Stock3,360	MOSFET (Metal Oxide)	40V	180A (Tc)	10V	4.5V @ 250µA	404nC @ 10V	20500pF @ 25V	±20V	-	300W (Tc)	1.15 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2PAK	TO-263-3, D2Pak (2 Leads + Tab) Variant
STB34NM60N	STMicroelectronics	MOSFET N-CH 600V 29A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2722pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 14.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,528	MOSFET (Metal Oxide)	600V	29A (Tc)	10V	4V @ 250µA	84nC @ 10V	2722pF @ 100V	±25V	-	250W (Tc)	105 mOhm @ 14.5A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB