Page 40 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STB33N60DM2
STMicroelectronics

MOSFET N-CH 600V 24A

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,024
STL35N15F3
STMicroelectronics

MOSFET N-CH 150V 33A POWERFLAT56

Package: 8-PowerVDFN

Stock4,960
STB18N65M5
STMicroelectronics

MOSFET N-CH 650V 15A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,920
STB12NM50T4
STMicroelectronics

MOSFET N-CH 550V 12A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock129,036
STB150NF55T4
STMicroelectronics

MOSFET N-CH 55V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock223,812
STB150NF04
STMicroelectronics

MOSFET N-CH 40V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock12,492
STL24N60M2
STMicroelectronics

MOSFET N-CH 600V 18A POWERFLAT

Package: 4-PowerFlat? HV

Stock6,976
STL80N75F6
STMicroelectronics

MOSFET N-CH 75V 18A POWERFLAT56

Package: 8-PowerSMD, Flat Leads

Stock288,600
STL100N10F7
STMicroelectronics

MOSFET N-CH 100V 80A PWRFLT5X6

Package: 8-PowerVDFN

Stock3,552
STL17N65M5
STMicroelectronics

MOSFET N-CH 650V 1.8A POWERFLAT

Package: 4-PowerFlat? HV

Stock5,872
STB12NM50N
STMicroelectronics

MOSFET N-CH 500V 11A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,920
STB14NK50ZT4
STMicroelectronics

MOSFET N-CH 500V 14A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock82,728
STB200NF03T4
STMicroelectronics

MOSFET N-CH 30V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock36,444
STD13NM60ND
STMicroelectronics

MOSFET N-CH 600V 11A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,656
STH240N10F7-6
STMicroelectronics

MOSFET N-CH 100V 180A H2PAK-6

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock4,224
STH150N10F7-2
STMicroelectronics

MOSFET N-CH 100V 90A H2PAK-2

Package: TO-263-3, D2Pak (2 Leads + Tab) Variant

Stock5,824
STB80NF55L-06T4
STMicroelectronics

MOSFET N-CH 55V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,392
STK38N3LLH5
STMicroelectronics

MOSFET N-CH 30V 38A POLARPAK

Package: PolarPak?

Stock6,016
STL19N60DM2
STMicroelectronics

N-CHANNEL 600 V, 0.28 OHM TYP.,

Package: 8-PowerVDFN

Stock5,280
STB21NK50Z
STMicroelectronics

MOSFET N-CH 500V 17A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,376

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STB33N60DM2	STMicroelectronics	MOSFET N-CH 600V 24A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,024	MOSFET (Metal Oxide)	600V	24A (Tc)	10V	5V @ 250µA	43nC @ 10V	1870pF @ 100V	±25V	-	190W (Tc)	130 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STL35N15F3	STMicroelectronics	MOSFET N-CH 150V 33A POWERFLAT56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1905pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock4,960	MOSFET (Metal Oxide)	150V	33A (Tc)	10V	4V @ 250µA	49.4nC @ 10V	1905pF @ 25V	±20V	-	80W (Tc)	40 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerVDFN
STB18N65M5	STMicroelectronics	MOSFET N-CH 650V 15A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,920	MOSFET (Metal Oxide)	650V	15A (Tc)	10V	5V @ 250µA	31nC @ 10V	1240pF @ 100V	±25V	-	110W (Tc)	220 mOhm @ 7.5A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB12NM50T4	STMicroelectronics	MOSFET N-CH 550V 12A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 6A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock129,036	MOSFET (Metal Oxide)	550V	12A (Tc)	10V	5V @ 50µA	39nC @ 10V	1000pF @ 25V	±30V	-	160W (Tc)	350 mOhm @ 6A, 10V	-65°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB150NF55T4	STMicroelectronics	MOSFET N-CH 55V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock223,812	MOSFET (Metal Oxide)	55V	120A (Tc)	10V	4V @ 250µA	190nC @ 10V	4400pF @ 25V	±20V	-	300W (Tc)	6 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB150NF04	STMicroelectronics	MOSFET N-CH 40V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3650pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock12,492	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 250µA	150nC @ 10V	3650pF @ 25V	±20V	-	300W (Tc)	7 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STL24N60M2	STMicroelectronics	MOSFET N-CH 600V 18A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (8x8) HV Package / Case: 4-PowerFlat? HV	Package: 4-PowerFlat? HV	Stock6,976	MOSFET (Metal Oxide)	600V	18A (Tc)	10V	4V @ 250µA	29nC @ 10V	1060pF @ 100V	±25V	-	125W (Tc)	210 mOhm @ 9A, 10V	150°C (TJ)	Surface Mount	PowerFlat? (8x8) HV	4-PowerFlat? HV
STL80N75F6	STMicroelectronics	MOSFET N-CH 75V 18A POWERFLAT56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7120pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock288,600	MOSFET (Metal Oxide)	75V	80A (Tc)	10V	4V @ 250µA	100nC @ 10V	7120pF @ 25V	±20V	-	80W (Tc)	6.3 mOhm @ 9A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerSMD, Flat Leads
STL100N10F7	STMicroelectronics	MOSFET N-CH 100V 80A PWRFLT5X6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5680pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock3,552	MOSFET (Metal Oxide)	100V	80A (Tc)	10V	4V @ 250µA	80nC @ 10V	5680pF @ 50V	±20V	-	5W (Ta), 100W (Tc)	7.3 mOhm @ 19A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerVDFN
STL17N65M5	STMicroelectronics	MOSFET N-CH 650V 1.8A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 816pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 70W (Tc) Rds On (Max) @ Id, Vgs: 374 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (8x8) HV Package / Case: 4-PowerFlat? HV	Package: 4-PowerFlat? HV	Stock5,872	MOSFET (Metal Oxide)	650V	1.8A (Ta), 10A (Tc)	10V	5V @ 250µA	22nC @ 10V	816pF @ 100V	±25V	-	2.8W (Ta), 70W (Tc)	374 mOhm @ 5.5A, 10V	150°C (TJ)	Surface Mount	PowerFlat? (8x8) HV	4-PowerFlat? HV
STB12NM50N	STMicroelectronics	MOSFET N-CH 500V 11A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,920	MOSFET (Metal Oxide)	500V	11A (Tc)	10V	4V @ 250µA	30nC @ 10V	940pF @ 50V	±25V	-	100W (Tc)	380 mOhm @ 5.5A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB14NK50ZT4	STMicroelectronics	MOSFET N-CH 500V 14A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock82,728	MOSFET (Metal Oxide)	500V	14A (Tc)	10V	4.5V @ 100µA	92nC @ 10V	2000pF @ 25V	±30V	-	150W (Tc)	380 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB200NF03T4	STMicroelectronics	MOSFET N-CH 30V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock36,444	MOSFET (Metal Oxide)	30V	120A (Tc)	10V	4V @ 250µA	140nC @ 10V	4950pF @ 25V	±20V	-	300W (Tc)	3.6 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STD13NM60ND	STMicroelectronics	MOSFET N-CH 600V 11A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 109W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,656	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	5V @ 250µA	24.5nC @ 10V	845pF @ 50V	±25V	-	109W (Tc)	380 mOhm @ 5.5A, 10V	150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STH240N10F7-6	STMicroelectronics	MOSFET N-CH 100V 180A H2PAK-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock4,224	MOSFET (Metal Oxide)	100V	180A (Tc)	10V	4.5V @ 250µA	160nC @ 10V	11550pF @ 25V	±20V	-	300W (Tc)	2.5 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2PAK	TO-263-7, D2Pak (6 Leads + Tab)
STH150N10F7-2	STMicroelectronics	MOSFET N-CH 100V 90A H2PAK-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8115pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant	Package: TO-263-3, D2Pak (2 Leads + Tab) Variant	Stock5,824	MOSFET (Metal Oxide)	100V	110A (Tc)	10V	4.5V @ 250µA	117nC @ 10V	8115pF @ 50V	±20V	-	250W (Tc)	3.9 mOhm @ 55A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2PAK	TO-263-3, D2Pak (2 Leads + Tab) Variant
STB80NF55L-06T4	STMicroelectronics	MOSFET N-CH 55V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 136nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,392	MOSFET (Metal Oxide)	55V	80A (Tc)	10V	1V @ 250µA	136nC @ 5V	4850pF @ 25V	±20V	-	300W (Tc)	6.5 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STK38N3LLH5	STMicroelectronics	MOSFET N-CH 30V 38A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4640pF @ 25V Vgs (Max): ±22V FET Feature: - Power Dissipation (Max): 5.2W (Tc) Rds On (Max) @ Id, Vgs: 1.55 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PolarPak? Package / Case: PolarPak?	Package: PolarPak?	Stock6,016	MOSFET (Metal Oxide)	30V	38A (Tc)	4.5V, 10V	2.5V @ 250µA	41.7nC @ 4.5V	4640pF @ 25V	±22V	-	5.2W (Tc)	1.55 mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PolarPak?	PolarPak?
STL19N60DM2	STMicroelectronics	N-CHANNEL 600 V, 0.28 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (8x8) HV Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock5,280	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	5V @ 250µA	21nC @ 10V	-	±25V	-	90W (Tc)	320 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (8x8) HV	8-PowerVDFN
STB21NK50Z	STMicroelectronics	MOSFET N-CH 500V 17A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 119nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 8.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,376	MOSFET (Metal Oxide)	500V	17A (Tc)	10V	4.5V @ 100µA	119nC @ 10V	2600pF @ 25V	±30V	-	190W (Tc)	270 mOhm @ 8.5A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STL19N65M5	STMicroelectronics	MOSFET N-CH 650V 12.5A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 12.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 90W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (8x8) HV Package / Case: 4-PowerFlat? HV	Package: 4-PowerFlat? HV	Stock2,192	MOSFET (Metal Oxide)	650V	2.3A (Ta), 12.5A (Tc)	10V	5V @ 250µA	31nC @ 10V	1240pF @ 100V	±25V	-	2.8W (Ta), 90W (Tc)	240 mOhm @ 7.5A, 10V	150°C (TJ)	Surface Mount	PowerFlat? (8x8) HV	4-PowerFlat? HV
STL85N6F3	STMicroelectronics	MOSFET N-CH 60V 85A POWERFLAT5X6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (6x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock4,592	MOSFET (Metal Oxide)	60V	85A (Tc)	10V	2V @ 250µA	60nC @ 10V	3400pF @ 25V	±20V	-	80W (Tc)	5.7 mOhm @ 8.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (6x5)	8-PowerVDFN
STL15N65M5	STMicroelectronics	MOSFET N-CH 650V 10A 8POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 816pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 375 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock6,464	MOSFET (Metal Oxide)	650V	10A (Tc)	10V	5V @ 250µA	22nC @ 10V	816pF @ 100V	±25V	-	52W (Tc)	375 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerVDFN
STH265N6F6-6AG	STMicroelectronics	MOSFET N-CH 60V 180A H2PAK-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK-6 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock7,040	MOSFET (Metal Oxide)	60V	180A (Tc)	10V	4V @ 250µA	183nC @ 10V	11800pF @ 25V	±20V	-	300W (Tc)	2.1 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2PAK-6	TO-263-7, D2Pak (6 Leads + Tab)
STB24N65M2	STMicroelectronics	MOSFET N-CH 650V 16A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,240	MOSFET (Metal Oxide)	650V	16A (Tc)	10V	4V @ 250µA	29nC @ 10V	1060pF @ 100V	±25V	-	150W (Tc)	230 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB80NF55-06T4	STMicroelectronics	MOSFET N-CH 55V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 189nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock79,716	MOSFET (Metal Oxide)	55V	80A (Tc)	10V	4V @ 250µA	189nC @ 10V	4400pF @ 25V	±20V	-	300W (Tc)	6.5 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB24N60DM2	STMicroelectronics	MOSFET N-CH 600V 18A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,216	MOSFET (Metal Oxide)	600V	18A (Tc)	10V	5V @ 250µA	29nC @ 10V	1055pF @ 100V	±25V	-	150W (Tc)	200 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STH265N6F6-2AG	STMicroelectronics	MOSFET N-CH 60V 180A H2PAK-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2Pak-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant	Package: TO-263-3, D2Pak (2 Leads + Tab) Variant	Stock6,864	MOSFET (Metal Oxide)	60V	180A (Tc)	10V	4V @ 250µA	183nC @ 10V	11800pF @ 25V	±20V	-	300W (Tc)	2.1 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2Pak-2	TO-263-3, D2Pak (2 Leads + Tab) Variant