Page 58 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STP160N3LL
STMicroelectronics

MOSFET N-CH 30V 120A TO-220AB

Package: TO-220-3

Stock48,612
STB130N6F7
STMicroelectronics

MOSFET N-CH 60V 80A F7 D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,632
STP3LN80K5
STMicroelectronics

MOSFET N-CH 800V 2A TO220

Package: TO-220-3

Stock5,632
STF3LN80K5
STMicroelectronics

MOSFET N-CH 800V 2A TO220FP

Package: TO-220-3 Full Pack

Stock7,616
STU3LN80K5
STMicroelectronics

MOSFET N-CH 800V 2A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,784
STB80NF55-08AG
STMicroelectronics

MOSFET N-CH 55V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,328
STL16N60M6
STMicroelectronics

NCHANNEL 600V M6 POWER MOSFET

Package: -

Stock6,656
STH140N6F7-6
STMicroelectronics

N-CHANNEL 60 V, 0.0028 OHM TYP.,

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock2,736
STU60N3LH5
STMicroelectronics

MOSFET N-CH 30V 48A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock164,832
STD12N50DM2
STMicroelectronics

N-CHANNEL 500 V, 0.35 OHM TYP.,

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,264
STL190N4F7AG
STMicroelectronics

POWER TRANSISTORS

Package: 8-PowerSMD, Flat Leads

Stock3,264
STL140N4F7AG
STMicroelectronics

POWER TRANSISTORS

Package: 8-PowerSMD, Flat Leads

Stock5,296
STL120N4F6AG
STMicroelectronics

MOSFET N-CH 40V 55A POWERFLAT

Package: 8-PowerSMD, Flat Leads

Stock4,528
STD4N90K5
STMicroelectronics

N-CHANNEL 900 V, 0.25 OHM TYP.,

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,312
STD170N4F7AG
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 40 V

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,040
STD134N4F7AG
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 40 V

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,736
STD130N6F7
STMicroelectronics

N-CHANNEL 60 V 4.2 MOHM TYP. 80

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,440
STD8N60DM2
STMicroelectronics

N-CHANNEL 600 V, 0.26 OHM TYP.,

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,176
STL56N3LLH5
STMicroelectronics

MOSFET N-CH 30V 15A POWERFLAT

Package: 8-PowerSMD, Flat Leads

Stock4,720
STD4LN80K5
STMicroelectronics

MOSFET N-CH 800V 3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,728

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STP160N3LL	STMicroelectronics	MOSFET N-CH 30V 120A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock48,612	MOSFET (Metal Oxide)	30V	120A (Tc)	4.5V, 10V	2.5V @ 250µA	42nC @ 4.5V	3500pF @ 25V	±20V	-	136W (Tc)	3.2 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
STB130N6F7	STMicroelectronics	MOSFET N-CH 60V 80A F7 D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,632	MOSFET (Metal Oxide)	60V	80A (Tc)	10V	4V @ 250µA	42nC @ 10V	2600pF @ 25V	±20V	-	160W (Tc)	5 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STP3LN80K5	STMicroelectronics	MOSFET N-CH 800V 2A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 2.63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 102pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 3.25 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock5,632	MOSFET (Metal Oxide)	800V	2A (Tc)	10V	5V @ 100µA	2.63nC @ 10V	102pF @ 100V	±30V	-	45W (Tc)	3.25 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STF3LN80K5	STMicroelectronics	MOSFET N-CH 800V 2A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 2.63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 102pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 3.25 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,616	MOSFET (Metal Oxide)	800V	2A (Tc)	10V	5V @ 100µA	2.63nC @ 10V	102pF @ 100V	±30V	-	20W (Tc)	3.25 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STU3LN80K5	STMicroelectronics	MOSFET N-CH 800V 2A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 2.63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 102pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 3.25 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,784	MOSFET (Metal Oxide)	800V	2A (Tc)	10V	5V @ 100µA	2.63nC @ 10V	102pF @ 100V	±30V	-	45W (Tc)	3.25 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
STB80NF55-08AG	STMicroelectronics	MOSFET N-CH 55V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,328	MOSFET (Metal Oxide)	55V	80A	10V	-	112nC @ 10V	-	-	-	-	-	-	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STL16N60M6	STMicroelectronics	NCHANNEL 600V M6 POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,656	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STH140N6F7-6	STMicroelectronics	N-CHANNEL 60 V, 0.0028 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 158W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 40A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK-6 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock2,736	MOSFET (Metal Oxide)	60V	80A (Tc)	10V	4V @ 250µA	55nC @ 10V	3100pF @ 25V	±20V	-	158W (Tc)	3.2 mOhm @ 40A, 10V	175°C (TJ)	Surface Mount	H2PAK-6	TO-263-7, D2Pak (6 Leads + Tab)
STU60N3LH5	STMicroelectronics	MOSFET N-CH 30V 48A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock164,832	MOSFET (Metal Oxide)	30V	48A (Tc)	5V, 10V	3V @ 250µA	8.8nC @ 5V	1620pF @ 25V	±20V	-	60W (Tc)	8.4 mOhm @ 24A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STD12N50DM2	STMicroelectronics	N-CHANNEL 500 V, 0.35 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 628pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,264	MOSFET (Metal Oxide)	500V	11A (Tc)	10V	5V @ 250µA	16nC @ 10V	628pF @ 100V	±25V	-	110W (Tc)	350 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STL190N4F7AG	STMicroelectronics	POWER TRANSISTORS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 127W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 17.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock3,264	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	4V @ 250µA	41nC @ 10V	3000pF @ 25V	±20V	-	127W (Tc)	2 mOhm @ 17.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerSMD, Flat Leads
STL140N4F7AG	STMicroelectronics	POWER TRANSISTORS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 111W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock5,296	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	4V @ 250µA	29nC @ 10V	2300pF @ 25V	±20V	-	111W (Tc)	2.5 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerSMD, Flat Leads
STL120N4F6AG	STMicroelectronics	MOSFET N-CH 40V 55A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V Vgs (Max): 40V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 13A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock4,528	MOSFET (Metal Oxide)	40V	55A (Tc)	10V	4V @ 250µA	63nC @ 10V	3700pF @ 25V	40V	-	96W (Tc)	3.6 mOhm @ 13A, 10V	175°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerSMD, Flat Leads
STD4N90K5	STMicroelectronics	N-CHANNEL 900 V, 0.25 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 3A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 173pF @ 100V Vgs (Max): ±30V FET Feature: Current Sensing Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,312	MOSFET (Metal Oxide)	900V	3A	10V	5V @ 100µA	5.3nC @ 10V	173pF @ 100V	±30V	Current Sensing	60W (Tc)	2.1 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STD170N4F7AG	STMicroelectronics	AUTOMOTIVE-GRADE N-CHANNEL 40 V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 172W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,040	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 250µA	63nC @ 10V	4350pF @ 25V	±20V	-	172W (Tc)	2.8 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STD134N4F7AG	STMicroelectronics	AUTOMOTIVE-GRADE N-CHANNEL 40 V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2790pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 134W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,736	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 250µA	41nC @ 10V	2790pF @ 25V	±20V	-	134W (Tc)	3.5 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STD130N6F7	STMicroelectronics	N-CHANNEL 60 V 4.2 MOHM TYP. 80 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 134W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,440	MOSFET (Metal Oxide)	60V	80A (Tc)	10V	4V @ 250µA	42nC @ 10V	2600pF @ 30V	±20V	-	134W (Tc)	5 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STD8N60DM2	STMicroelectronics	N-CHANNEL 600 V, 0.26 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,176	MOSFET (Metal Oxide)	600V	8A (Tc)	10V	5V @ 100µA	13.5nC @ 10V	375pF @ 100V	±30V	-	85W (Tc)	600 mOhm @ 4A, 10V	150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STL56N3LLH5	STMicroelectronics	MOSFET N-CH 30V 15A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V Vgs (Max): +22V, -20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock4,720	MOSFET (Metal Oxide)	30V	56A (Tc)	4.5V, 10V	1V @ 250µA	6.5nC @ 4.5V	950pF @ 25V	+22V, -20V	-	62.5W (Tc)	9 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerSMD, Flat Leads
STD4LN80K5	STMicroelectronics	MOSFET N-CH 800V 3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 122pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,728	MOSFET (Metal Oxide)	800V	3A (Tc)	10V	5V @ 100µA	3.7nC @ 10V	122pF @ 100V	±30V	-	60W (Tc)	2.6 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STL4LN80K5	STMicroelectronics	MOSFET N-CH 800V 3A PWRFLAT 5X6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock3,232	MOSFET (Metal Oxide)	800V	3A (Tc)	10V	5V @ 100µA	4nC @ 10V	110pF @ 100V	±30V	-	38W (Tc)	2.6 Ohm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerSMD, Flat Leads
STL8DN6LF6AG	STMicroelectronics	MOSFET N-CH 60V 32A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.8W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 9.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock2,560	MOSFET (Metal Oxide)	60V	32A (Tc)	4.5V, 10V	2.5V @ 250µA	27nC @ 10V	1340pF @ 25V	±20V	-	4.8W (Ta), 55W (Tc)	27 mOhm @ 9.6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerVDFN
STS8N6LF6AG	STMicroelectronics	MOSFET N-CH 60V 8A 8SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta) Rds On (Max) @ Id, Vgs: 24 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,760	MOSFET (Metal Oxide)	60V	8A (Ta)	4.5V, 10V	2.5V @ 250µA	27nC @ 10V	1340pF @ 25V	±20V	-	3.2W (Ta)	24 mOhm @ 4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STD36P4LLF6	STMicroelectronics	MOSFET P-CH 40V 36A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 18A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock121,752	MOSFET (Metal Oxide)	40V	36A (Tc)	4.5V, 10V	2.5V @ 250µA	22nC @ 4.5V	2850pF @ 25V	±20V	-	60W (Tc)	20.5 mOhm @ 18A, 10V	175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STL11N6F7	STMicroelectronics	MOSFET N-CH 60V 11A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.9W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (3.3x3.3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock7,888	MOSFET (Metal Oxide)	60V	11A (Ta)	10V	4V @ 250µA	17nC @ 10V	1035pF @ 30V	±20V	-	2.9W (Ta), 48W (Tc)	12 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (3.3x3.3)	8-PowerVDFN
STD20NF06LAG	STMicroelectronics	MOSFET N-CH 60V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,760	MOSFET (Metal Oxide)	60V	20A	5V, 10V	-	12nC @ 10V	-	-	-	-	-	-	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STL7N6F7	STMicroelectronics	N-CHANNEL 60 V, 0.019 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (2x2) Package / Case: 6-PowerWDFN	Package: 6-PowerWDFN	Stock2,224	MOSFET (Metal Oxide)	60V	7A (Tc)	10V	4V @ 250µA	8nC @ 10V	450pF @ 25V	±20V	-	2.4W (Ta)	25 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (2x2)	6-PowerWDFN
STF28N60M2	STMicroelectronics	MOSFET N-CH 600V 24A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,616	MOSFET (Metal Oxide)	600V	24A (Tc)	10V	4V @ 250µA	37nC @ 10V	1370pF @ 100V	±25V	-	30W (Tc)	150 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack