Page 60 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STD90NS3LLH7
STMicroelectronics

MOSFET N-CH 30V 80A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,752
STB70NF3LLT4
STMicroelectronics

MOSFET N-CH 30V 70A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock49,176
STDLED623
STMicroelectronics

MOSFET N-CH 620V 3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,352
STDLED524
STMicroelectronics

MOSFET N-CH 525V 4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,952
STD8NF25
STMicroelectronics

MOSFET N-CH 250V 8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,880
STP95N3LLH6
STMicroelectronics

MOSFET N-CH 30V 80A TO-220

Package: TO-220-3

Stock799,920
STD4NK60ZT4
STMicroelectronics

MOSFET N-CH 600V 4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,469,172
STB25NF06AG
STMicroelectronics

MOSFET N-CH 60V 16A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,864
STH110N7F6-2
STMicroelectronics

MOSFET N-CH 68V 80A H2PAK-2

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,960
STD70NS04ZL
STMicroelectronics

MOSFET N-CH 33V 70A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock630,012
STL9P3LLH6
STMicroelectronics

MOSFET PCH 30V 9A POWERFLAT

Package: 8-PowerVDFN

Stock6,832
STL66N3LLH5
STMicroelectronics

MOSFET N-CH 30V 21A POWERFLAT56

Package: 8-PowerVDFN

Stock5,328
STD5N52K3
STMicroelectronics

MOSFET N-CH 525V 4.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock42,732
STP110N7F6
STMicroelectronics

MOSFET N-CH 68V 110A TO220

Package: TO-220-3

Stock180,000
STD3N65M6
STMicroelectronics

MOSFET N-CH 650V DPAK

Package: -

Stock3,536
STU3N65M6
STMicroelectronics

MOSFET N-CH 650V 3.5A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,880
STS9P3LLH6
STMicroelectronics

MOSFET PCH 30V 9A SO8

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,744
STT6N3LLH6
STMicroelectronics

MOSFET N-CH 30V 6A SOT23-6

Package: SOT-23-6

Stock111,000
STL50N6F7
STMicroelectronics

MOSFET N-CH 60V 50A POWERFLAT

Package: 8-PowerVDFN

Stock4,816
STL3N65M2
STMicroelectronics

MOSFET N-CH 650V 2.3A POWERFLAT

Package: 8-PowerVDFN

Stock3,632

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STD90NS3LLH7	STMicroelectronics	MOSFET N-CH 30V 80A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,752	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	1.2V @ 1mA	13.7nC @ 4.5V	2110pF @ 25V	±20V	Schottky Diode (Body)	57W (Tc)	3.4 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STB70NF3LLT4	STMicroelectronics	MOSFET N-CH 30V 70A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock49,176	MOSFET (Metal Oxide)	30V	70A (Tc)	4.5V, 10V	1V @ 250µA	33nC @ 4.5V	1650pF @ 25V	±16V	-	100W (Tc)	9.5 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STDLED623	STMicroelectronics	MOSFET N-CH 620V 3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,352	MOSFET (Metal Oxide)	620V	3A (Tc)	10V	4.5V @ 50µA	15.5nC @ 10V	350pF @ 50V	±30V	-	45W (Tc)	3.6 Ohm @ 1.1A, 10V	150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STDLED524	STMicroelectronics	MOSFET N-CH 525V 4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 525V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,952	MOSFET (Metal Oxide)	525V	4A (Tc)	10V	4.5V @ 50µA	12nC @ 10V	340pF @ 100V	±30V	-	45W (Tc)	2.6 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STD8NF25	STMicroelectronics	MOSFET N-CH 250V 8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 72W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,880	MOSFET (Metal Oxide)	250V	8A (Tc)	10V	4V @ 250µA	16nC @ 10V	500pF @ 25V	±20V	-	72W (Tc)	420 mOhm @ 8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STP95N3LLH6	STMicroelectronics	MOSFET N-CH 30V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 40A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock799,920	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	2.5V @ 250µA	20nC @ 4.5V	2200pF @ 25V	±20V	-	70W (Tc)	4.7 mOhm @ 40A, 10V	175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STD4NK60ZT4	STMicroelectronics	MOSFET N-CH 600V 4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,469,172	MOSFET (Metal Oxide)	600V	4A (Tc)	10V	4.5V @ 50µA	26nC @ 10V	510pF @ 25V	±30V	-	70W (Tc)	2 Ohm @ 2A, 10V	150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STB25NF06AG	STMicroelectronics	MOSFET N-CH 60V 16A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,864	MOSFET (Metal Oxide)	60V	16A	4.5V, 10V	-	-	-	-	-	-	-	-	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STH110N7F6-2	STMicroelectronics	MOSFET N-CH 68V 80A H2PAK-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 68V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2Pak-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,960	MOSFET (Metal Oxide)	68V	80A (Tc)	10V	4V @ 250µA	100nC @ 10V	5850pF @ 25V	±20V	-	176W (Tc)	6.3 mOhm @ 55A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2Pak-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STD70NS04ZL	STMicroelectronics	MOSFET N-CH 33V 70A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 33V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock630,012	MOSFET (Metal Oxide)	33V	70A (Tc)	5V, 10V	3V @ 1mA	32nC @ 5V	1800pF @ 25V	±20V	-	110W (Tc)	10.5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STL9P3LLH6	STMicroelectronics	MOSFET PCH 30V 9A POWERFLAT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2615pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 15 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (3.3x3.3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock6,832	MOSFET (Metal Oxide)	30V	9A (Tc)	4.5V, 10V	1V @ 250µA	24nC @ 4.5V	2615pF @ 25V	±20V	-	3W (Ta)	15 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (3.3x3.3)	8-PowerVDFN
STL66N3LLH5	STMicroelectronics	MOSFET N-CH 30V 21A POWERFLAT56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Vgs (Max): ±22V FET Feature: - Power Dissipation (Max): 72W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock5,328	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	3V @ 250µA	12nC @ 4.5V	1500pF @ 25V	±22V	-	72W (Tc)	5.8 mOhm @ 10.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerVDFN
STD5N52K3	STMicroelectronics	MOSFET N-CH 525V 4.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 525V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock42,732	MOSFET (Metal Oxide)	525V	4.4A (Tc)	10V	4.5V @ 50µA	17nC @ 10V	545pF @ 100V	±30V	-	70W (Tc)	1.5 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STP110N7F6	STMicroelectronics	MOSFET N-CH 68V 110A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 68V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock180,000	MOSFET (Metal Oxide)	68V	110A (Tc)	10V	4V @ 250µA	100nC @ 10V	5850pF @ 25V	±20V	-	176W (Tc)	6.5 mOhm @ 55A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
STD3N65M6	STMicroelectronics	MOSFET N-CH 650V DPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,536	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STU3N65M6	STMicroelectronics	MOSFET N-CH 650V 3.5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,880	MOSFET (Metal Oxide)	650V	3.5A (Tc)	10V	3.75V @ 250µA	6nC @ 10V	150pF @ 100V	±25V	-	45W (Tc)	1.5 Ohm @ 1.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STS9P3LLH6	STMicroelectronics	MOSFET PCH 30V 9A SO8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2615pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.7W (Ta) Rds On (Max) @ Id, Vgs: 15 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,744	MOSFET (Metal Oxide)	30V	9A (Ta)	4.5V, 10V	2V @ 250µA	24nC @ 4.5V	2615pF @ 25V	±20V	-	2.7W (Ta)	15 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STT6N3LLH6	STMicroelectronics	MOSFET N-CH 30V 6A SOT23-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 283pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6	Package: SOT-23-6	Stock111,000	MOSFET (Metal Oxide)	30V	6A (Tc)	4.5V, 10V	1V @ 250µA	3.6nC @ 4.5V	283pF @ 24V	±20V	-	1.6W (Tc)	25 mOhm @ 3A, 10V	150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
STL50N6F7	STMicroelectronics	MOSFET N-CH 60V 50A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock4,816	MOSFET (Metal Oxide)	60V	50A (Tc)	10V	4V @ 250µA	17nC @ 10V	980pF @ 25V	±20V	-	71W (Tc)	14 mOhm @ 6.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerVDFN
STL3N65M2	STMicroelectronics	MOSFET N-CH 650V 2.3A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 22W (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (3.3x3.3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock3,632	MOSFET (Metal Oxide)	650V	2.3A (Tc)	10V	4V @ 250µA	5nC @ 10V	155pF @ 100V	±25V	-	22W (Tc)	1.8 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (3.3x3.3)	8-PowerVDFN
STF10P6F6	STMicroelectronics	MOSFET P-CH 60V 10A TO-220FP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 48V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,848	MOSFET (Metal Oxide)	60V	10A (Tc)	10V	4V @ 250µA	6.4nC @ 10V	340pF @ 48V	±20V	-	20W (Tc)	160 mOhm @ 5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STD3N40K3	STMicroelectronics	MOSFET N CH 400V 2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 900mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock91,260	MOSFET (Metal Oxide)	400V	2A (Tc)	10V	4.5V @ 50µA	11nC @ 10V	165pF @ 50V	±30V	-	30W (Tc)	3.4 Ohm @ 900mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STD19NF06L	STMicroelectronics	MOSFET N-CH 60V DPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,016	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STD20P3H6AG	STMicroelectronics	MOSFET PCH 30V 20A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,304	MOSFET (Metal Oxide)	30V	20A (Tc)	10V	4V @ 250µA	12.8nC @ 10V	635pF @ 25V	±20V	-	40W (Tc)	50 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STD3NK60Z-1	STMicroelectronics	MOSFET N-CH 600V 2.4A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 311pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock1,014,816	MOSFET (Metal Oxide)	600V	2.4A (Tc)	10V	4.5V @ 50µA	11.8nC @ 10V	311pF @ 25V	±30V	-	45W (Tc)	3.6 Ohm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STS7N3LLH6	STMicroelectronics	MOSFET N-CH 30V 17A 8SOIC FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,304	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STD96N3LLH6	STMicroelectronics	MOSFET N-CH 30V 80A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 40A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock182,904	MOSFET (Metal Oxide)	30V	80A (Tc)	5.5V, 10V	2.5V @ 250µA	20nC @ 4.5V	2200pF @ 25V	±20V	-	70W (Tc)	4.2 mOhm @ 40A, 10V	175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STL3P6F6	STMicroelectronics	MOSFET P-CH 60V 3A POWERFLAT FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,408	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-