Page 68 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STP28N60M2
STMicroelectronics

MOSFET N-CH 600V 24A TO-220

Package: TO-220-3

Stock3,984
STF5N105K5
STMicroelectronics

MOSFET N-CH 1050V 3A TO-220FP

Package: TO-220-3 Full Pack

Stock3,312
STFW20N65M5
STMicroelectronics

MOSFET N-CH 650V 18A TO-3PF

Package: TO-3P-3 Full Pack

Stock3,584
STW6N95K5
STMicroelectronics

MOSFET N-CH 950V 9A TO-274

Package: TO-247-3

Stock7,596
STB46NF30
STMicroelectronics

MOSFET N-CH 300V 42A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,496
STH300NH02L-6
STMicroelectronics

MOSFET N-CH 24V 180A H2PAK-6

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock6,656
STB9NK90Z
STMicroelectronics

MOSFET N-CH 900V 8A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock792,036
STF9NK90Z
STMicroelectronics

MOSFET N-CH 900V 8A TO-220FP

Package: TO-220-3 Full Pack

Stock91,092
STB17N80K5
STMicroelectronics

MOSFET N-CH 800V 14A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,000
STW240N10F7
STMicroelectronics

MOSFET N-CH 100V 180A TO247

Package: TO-247-3

Stock3,936
STW13NK60Z
STMicroelectronics

MOSFET N-CH 600V 13A TO-247

Package: TO-247-3

Stock17,568
STI20N65M5
STMicroelectronics

MOSFET N-CH 650V 18A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,896
STFW24NM60N
STMicroelectronics

MOSFET N-CH 600V TO-3PH

Package: -

Stock3,200
STH272N6F7-6AG
STMicroelectronics

MOSFET N-CH 60V 180A H2PAK-6

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock4,288
STP410N4F7AG
STMicroelectronics

MOSFET N-CH 40V 180A TO220

Package: TO-220-3

Stock3,152
STF17N80K5
STMicroelectronics

MOSFET N-CH 800V 14A TO220FP

Package: TO-220-3 Full Pack

Stock6,400
STF15NM65N
STMicroelectronics

MOSFET N-CH 650V 12A TO-220FP

Package: TO-220-3 Full Pack

Stock55,152
STP12NK80Z
STMicroelectronics

MOSFET N-CH 800V 10.5A TO-220

Package: TO-220-3

Stock9,156
STH130N10F3-2
STMicroelectronics

MOSFET N-CH 100V 120A H2PAK-2

Package: TO-263-3, D2Pak (2 Leads + Tab) Variant

Stock4,192
STL28N60DM2
STMicroelectronics

MOSFET N-CH 60V 21A PWRFLAT 8X8

Package: -

Stock5,920

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STP28N60M2	STMicroelectronics	MOSFET N-CH 600V 24A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock3,984	MOSFET (Metal Oxide)	600V	24A (Tc)	10V	4V @ 250µA	37nC @ 10V	1370pF @ 100V	±25V	-	170W (Tc)	150 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STF5N105K5	STMicroelectronics	MOSFET N-CH 1050V 3A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1050V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,312	MOSFET (Metal Oxide)	1050V	3A (Tc)	10V	5V @ 100µA	12.5nC @ 10V	210pF @ 100V	±30V	-	25W (Tc)	3.5 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
STFW20N65M5	STMicroelectronics	MOSFET N-CH 650V 18A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1434pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock3,584	MOSFET (Metal Oxide)	650V	18A (Tc)	10V	5V @ 250µA	36nC @ 10V	1434pF @ 100V	±25V	-	48W (Tc)	190 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
STW6N95K5	STMicroelectronics	MOSFET N-CH 950V 9A TO-274 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock7,596	MOSFET (Metal Oxide)	950V	9A (Tc)	10V	5V @ 100µA	13nC @ 10V	450pF @ 100V	±30V	-	90W (Tc)	1.25 Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STB46NF30	STMicroelectronics	MOSFET N-CH 300V 42A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,496	MOSFET (Metal Oxide)	300V	42A (Tc)	10V	4V @ 250µA	90nC @ 10V	3200pF @ 25V	±20V	-	300W (Tc)	75 mOhm @ 17A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STH300NH02L-6	STMicroelectronics	MOSFET N-CH 24V 180A H2PAK-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7050pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock6,656	MOSFET (Metal Oxide)	24V	180A (Tc)	5V, 10V	1V @ 250µA	109nC @ 10V	7050pF @ 15V	±20V	-	300W (Tc)	1.2 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2PAK	TO-263-7, D2Pak (6 Leads + Tab)
STB9NK90Z	STMicroelectronics	MOSFET N-CH 900V 8A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2115pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock792,036	MOSFET (Metal Oxide)	900V	8A (Tc)	10V	4.5V @ 100µA	72nC @ 10V	2115pF @ 25V	±30V	-	160W (Tc)	1.3 Ohm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STF9NK90Z	STMicroelectronics	MOSFET N-CH 900V 8A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2115pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock91,092	MOSFET (Metal Oxide)	900V	8A (Tc)	10V	4.5V @ 100µA	72nC @ 10V	2115pF @ 25V	±30V	-	40W (Tc)	1.3 Ohm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STB17N80K5	STMicroelectronics	MOSFET N-CH 800V 14A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 866pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 340 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,000	MOSFET (Metal Oxide)	800V	14A (Tc)	10V	5V @ 250µA	26nC @ 10V	866pF @ 100V	±30V	-	170W (Tc)	340 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STW240N10F7	STMicroelectronics	MOSFET N-CH 100V 180A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock3,936	MOSFET (Metal Oxide)	100V	180A (Tc)	10V	4.5V @ 250µA	160nC @ 10V	11550pF @ 25V	±20V	-	300W (Tc)	3 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-3
STW13NK60Z	STMicroelectronics	MOSFET N-CH 600V 13A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2030pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock17,568	MOSFET (Metal Oxide)	600V	13A (Tc)	10V	4.5V @ 100µA	92nC @ 10V	2030pF @ 25V	±30V	-	150W (Tc)	550 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STI20N65M5	STMicroelectronics	MOSFET N-CH 650V 18A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1434pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,896	MOSFET (Metal Oxide)	650V	18A (Tc)	10V	5V @ 250µA	36nC @ 10V	1434pF @ 100V	±25V	-	130W (Tc)	190 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STFW24NM60N	STMicroelectronics	MOSFET N-CH 600V TO-3PH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,200	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STH272N6F7-6AG	STMicroelectronics	MOSFET N-CH 60V 180A H2PAK-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 333W (Tc) Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK-6 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock4,288	MOSFET (Metal Oxide)	60V	180A (Tc)	10V	4V @ 250µA	170nC @ 10V	11000pF @ 25V	±20V	-	333W (Tc)	1.5 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2PAK-6	TO-263-7, D2Pak (6 Leads + Tab)
STP410N4F7AG	STMicroelectronics	MOSFET N-CH 40V 180A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock3,152	MOSFET (Metal Oxide)	40V	180A	4.5V, 10V	-	-	-	-	-	-	-	-	Through Hole	TO-220	TO-220-3
STF17N80K5	STMicroelectronics	MOSFET N-CH 800V 14A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 866pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 340 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,400	MOSFET (Metal Oxide)	800V	14A (Tc)	10V	5V @ 250µA	26nC @ 10V	866pF @ 100V	±30V	-	30W (Tc)	340 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF15NM65N	STMicroelectronics	MOSFET N-CH 650V 12A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 983pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock55,152	MOSFET (Metal Oxide)	650V	12A (Tc)	10V	4V @ 250µA	33.3nC @ 10V	983pF @ 50V	±25V	-	30W (Tc)	380 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP12NK80Z	STMicroelectronics	MOSFET N-CH 800V 10.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2620pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 5.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock9,156	MOSFET (Metal Oxide)	800V	10.5A (Tc)	10V	4.5V @ 100µA	87nC @ 10V	2620pF @ 25V	±30V	-	190W (Tc)	750 mOhm @ 5.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STH130N10F3-2	STMicroelectronics	MOSFET N-CH 100V 120A H2PAK-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3305pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant	Package: TO-263-3, D2Pak (2 Leads + Tab) Variant	Stock4,192	MOSFET (Metal Oxide)	100V	120A (Tc)	10V	4V @ 250µA	57nC @ 10V	3305pF @ 25V	±20V	-	250W (Tc)	9.3 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2PAK	TO-263-3, D2Pak (2 Leads + Tab) Variant
STL28N60DM2	STMicroelectronics	MOSFET N-CH 60V 21A PWRFLAT 8X8 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock5,920	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STP60NF03L	STMicroelectronics	MOSFET N-CH 30V 60A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock529,704	MOSFET (Metal Oxide)	30V	60A (Tc)	4.5V, 10V	2.5V @ 250µA	58nC @ 5V	2550pF @ 25V	±20V	-	100W (Tc)	10 mOhm @ 30A, 10V	175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STB11NM60T4	STMicroelectronics	MOSFET N-CH 650V 11A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.5A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock492,672	MOSFET (Metal Oxide)	650V	11A (Tc)	10V	5V @ 250µA	30nC @ 10V	1000pF @ 25V	±30V	-	160W (Tc)	450 mOhm @ 5.5A, 10V	-65°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STF140N8F7	STMicroelectronics	MOSFET N-CH 80V 64A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6340pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,304	MOSFET (Metal Oxide)	80V	64A (Tc)	10V	4.5V @ 250µA	96nC @ 10V	6340pF @ 40V	±20V	-	35W (Tc)	4.3 mOhm @ 32A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP17N80K5	STMicroelectronics	MOSFET N-CH 800V 14A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 866pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 340 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock5,168	MOSFET (Metal Oxide)	800V	14A (Tc)	10V	5V @ 250µA	26nC @ 10V	866pF @ 100V	±30V	-	170W (Tc)	340 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STP80NF55	STMicroelectronics	MOSFET N-CH 55V 80A TO220 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock30,840	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STL18NM60N	STMicroelectronics	MOSFET N-CH 600V 6A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 310 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (8x8) HV Package / Case: 4-PowerFlat? HV	Package: 4-PowerFlat? HV	Stock2,288	MOSFET (Metal Oxide)	600V	2.1A (Ta), 12A (Tc)	10V	4V @ 250µA	35nC @ 10V	1000pF @ 50V	±30V	-	3W (Ta), 110W (Tc)	310 mOhm @ 6A, 10V	150°C (TJ)	Surface Mount	PowerFlat? (8x8) HV	4-PowerFlat? HV
STW20N60M2-EP	STMicroelectronics	MOSFET N-CH 600V 13A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 278 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock5,392	MOSFET (Metal Oxide)	600V	13A (Tc)	10V	4V @ 250µA	21.7nC @ 10V	787pF @ 100V	±25V	-	110W (Tc)	278 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STP11NK50Z	STMicroelectronics	MOSFET N-CH 500V 10A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 520 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock328,452	MOSFET (Metal Oxide)	500V	10A (Tc)	10V	4.5V @ 100µA	68nC @ 10V	1390pF @ 25V	±30V	-	125W (Tc)	520 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3