Page 71 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

SCTWA30N120
STMicroelectronics

IC POWER MOSFET 1200V HIP247

Package: -

Stock4,992
STY60NM60
STMicroelectronics

MOSFET N-CH 600V 60A MAX247

Package: TO-247-3

Stock17,868
STY60NK30Z
STMicroelectronics

MOSFET N-CH 300V 60A MAX247

Package: TO-247-3

Stock148,992
SCTWA20N120
STMicroelectronics

IC POWER MOSFET 1200V HIP247

Package: -

Stock7,776
SCTWA10N120
STMicroelectronics

IC POWER MOSFET 1200V HIP247

Package: -

Stock2,064
STB18N55M5
STMicroelectronics

MOSFET N-CH 550V 13A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,832
STK800
STMicroelectronics

MOSFET N-CH 30V 20A POLARPAK

Package: PolarPak?

Stock524,904
STD95NH02LT4
STMicroelectronics

MOSFET N-CH 24V 80A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock304,308
STD19NF20
STMicroelectronics

MOSFET N-CH 200V 15A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,000
STE140NF20D
STMicroelectronics

MOSFET N-CH 200V 140A ISOTOP

Package: ISOTOP

Stock3,904
STW70N65M2
STMicroelectronics

MOSFET N-CH 650V 63A TO247-3

Package: TO-247-3

Stock7,664
STW70N60M2-4
STMicroelectronics

POWER MOSFET

Package: -

Stock2,304
STFW12N120K5
STMicroelectronics

MOSFET N-CH 1200V 12A TO-3PF

Package: TO-3P-3 Full Pack

Stock5,168
STWA70N60DM2
STMicroelectronics

MOSFET N-CH 600V 66A TO247

Package: TO-247-3

Stock5,856
STW45NM50
STMicroelectronics

MOSFET N-CH 500V 45A TO-247

Package: TO-247-3

Stock110,424
STB25NM50N-1
STMicroelectronics

MOSFET N-CH 500V 22A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,000
STI42N65M5
STMicroelectronics

MOSFET N-CH 650V 33A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,008
STW27NM60ND
STMicroelectronics

MOSFET N-CH 600V 21A TO-247

Package: TO-247-3

Stock21,960
STW36NM60ND
STMicroelectronics

MOSFET N-CH 600V 29A TO-247

Package: TO-247-3

Stock5,968
STF34NM60ND
STMicroelectronics

MOSFET N-CH 600V 29A TO-220FP

Package: TO-220-3 Full Pack

Stock4,288

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SCTWA30N120	STMicroelectronics	IC POWER MOSFET 1200V HIP247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,992	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STY60NM60	STMicroelectronics	MOSFET N-CH 600V 60A MAX247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 266nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 30A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: MAX247? Package / Case: TO-247-3	Package: TO-247-3	Stock17,868	MOSFET (Metal Oxide)	600V	60A (Tc)	10V	5V @ 250µA	266nC @ 10V	7300pF @ 25V	±30V	-	560W (Tc)	55 mOhm @ 30A, 10V	150°C (TJ)	Through Hole	MAX247?	TO-247-3
STY60NK30Z	STMicroelectronics	MOSFET N-CH 300V 60A MAX247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 450W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: MAX247? Package / Case: TO-247-3	Package: TO-247-3	Stock148,992	MOSFET (Metal Oxide)	300V	60A (Tc)	10V	4.5V @ 100µA	220nC @ 10V	7200pF @ 25V	±30V	-	450W (Tc)	45 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	MAX247?	TO-247-3
SCTWA20N120	STMicroelectronics	IC POWER MOSFET 1200V HIP247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,776	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCTWA10N120	STMicroelectronics	IC POWER MOSFET 1200V HIP247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,064	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STB18N55M5	STMicroelectronics	MOSFET N-CH 550V 13A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 192 mOhm @ 8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,832	MOSFET (Metal Oxide)	550V	16A (Tc)	10V	5V @ 250µA	31nC @ 10V	1260pF @ 100V	±25V	-	110W (Tc)	192 mOhm @ 8A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STK800	STMicroelectronics	MOSFET N-CH 30V 20A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 5.2W (Tc) Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PolarPak? Package / Case: PolarPak?	Package: PolarPak?	Stock524,904	MOSFET (Metal Oxide)	30V	20A (Tc)	4.5V, 10V	2.5V @ 250µA	13.4nC @ 4.5V	1380pF @ 25V	±16V	-	5.2W (Tc)	7.8 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PolarPak?	PolarPak?
STD95NH02LT4	STMicroelectronics	MOSFET N-CH 24V 80A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock304,308	MOSFET (Metal Oxide)	24V	80A (Tc)	5V, 10V	1V @ 250µA	17nC @ 5V	2070pF @ 15V	±20V	-	100W (Tc)	5 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STD19NF20	STMicroelectronics	MOSFET N-CH 200V 15A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,000	MOSFET (Metal Oxide)	200V	15A (Tc)	10V	4V @ 250µA	24nC @ 10V	800pF @ 25V	±20V	-	90W (Tc)	160 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STE140NF20D	STMicroelectronics	MOSFET N-CH 200V 140A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 140A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 338nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 70A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: ISOTOP	Package: ISOTOP	Stock3,904	MOSFET (Metal Oxide)	200V	140A	10V	4V @ 250µA	338nC @ 10V	11100pF @ 25V	±20V	-	500W (Tc)	12 mOhm @ 70A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	ISOTOP
STW70N65M2	STMicroelectronics	MOSFET N-CH 650V 63A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5140pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 46 mOhm @ 31.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock7,664	MOSFET (Metal Oxide)	650V	63A (Tc)	10V	4V @ 250µA	117nC @ 10V	5140pF @ 100V	±25V	-	446W (Tc)	46 mOhm @ 31.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW70N60M2-4	STMicroelectronics	POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 450W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,304	MOSFET (Metal Oxide)	600V	68A (Tc)	10V	4V @ 250µA	118nC @ 10V	5200pF @ 100V	±25V	-	450W (Tc)	40 mOhm @ 34A, 10V	-55°C ~ 150°C (TJ)	-	-	-
STFW12N120K5	STMicroelectronics	MOSFET N-CH 1200V 12A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 44.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 690 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock5,168	MOSFET (Metal Oxide)	1200V	12A (Tc)	10V	5V @ 100µA	44.2nC @ 10V	1370pF @ 100V	±30V	-	63W (Tc)	690 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
STWA70N60DM2	STMicroelectronics	MOSFET N-CH 600V 66A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5508pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 42 mOhm @ 33A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	Package: TO-247-3	Stock5,856	MOSFET (Metal Oxide)	600V	66A (Tc)	10V	5V @ 250µA	120nC @ 10V	5508pF @ 100V	±25V	-	446W (Tc)	42 mOhm @ 33A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 Long Leads	TO-247-3
STW45NM50	STMicroelectronics	MOSFET N-CH 500V 45A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 22.5A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock110,424	MOSFET (Metal Oxide)	500V	45A (Tc)	10V	5V @ 250µA	117nC @ 10V	3700pF @ 25V	±30V	-	417W (Tc)	100 mOhm @ 22.5A, 10V	-65°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STB25NM50N-1	STMicroelectronics	MOSFET N-CH 500V 22A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,000	MOSFET (Metal Oxide)	500V	22A (Tc)	10V	4V @ 250µA	84nC @ 10V	2565pF @ 25V	±25V	-	160W (Tc)	140 mOhm @ 11A, 10V	150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STI42N65M5	STMicroelectronics	MOSFET N-CH 650V 33A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 79 mOhm @ 16.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,008	MOSFET (Metal Oxide)	650V	33A (Tc)	10V	5V @ 250µA	100nC @ 10V	4650pF @ 100V	±25V	-	190W (Tc)	79 mOhm @ 16.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STW27NM60ND	STMicroelectronics	MOSFET N-CH 600V 21A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock21,960	MOSFET (Metal Oxide)	600V	21A (Tc)	10V	5V @ 250µA	-	-	±25V	-	160W (Tc)	160 mOhm @ 10.5A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW36NM60ND	STMicroelectronics	MOSFET N-CH 600V 29A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2785pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 14.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock5,968	MOSFET (Metal Oxide)	600V	29A (Tc)	10V	5V @ 250µA	80.4nC @ 10V	2785pF @ 50V	±25V	-	190W (Tc)	110 mOhm @ 14.5A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
STF34NM60ND	STMicroelectronics	MOSFET N-CH 600V 29A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2785pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 14.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,288	MOSFET (Metal Oxide)	600V	29A (Tc)	10V	5V @ 250µA	80.4nC @ 10V	2785pF @ 50V	±25V	-	40W (Tc)	110 mOhm @ 14.5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STFW6N120K3	STMicroelectronics	MOSFET N-CH 1200V 3.8A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock2,672	MOSFET (Metal Oxide)	1200V	6A (Tc)	10V	5V @ 100µA	34nC @ 10V	1050pF @ 100V	±30V	-	63W (Tc)	2.4 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
STW28N60M2	STMicroelectronics	MOSFET N-CH 600V 24A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock540,000	MOSFET (Metal Oxide)	600V	24A (Tc)	10V	4V @ 250µA	37nC @ 10V	1370pF @ 100V	±25V	-	170W (Tc)	150 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STW38N65M5-4	STMicroelectronics	MOSFET N-CH 650V 30A TO247-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: - Package / Case: TO-247-4	Package: TO-247-4	Stock3,392	MOSFET (Metal Oxide)	650V	30A (Tc)	10V	5V @ 250µA	71nC @ 10V	3000pF @ 100V	±25V	-	190W (Tc)	95 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	-	TO-247-4
STP16NK65Z	STMicroelectronics	MOSFET N-CH 650V 13A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2750pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,528	MOSFET (Metal Oxide)	650V	13A (Tc)	10V	4.5V @ 100µA	89nC @ 10V	2750pF @ 25V	±30V	-	190W (Tc)	500 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STB20NM50-1	STMicroelectronics	MOSFET N-CH 550V 20A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock32,700	MOSFET (Metal Oxide)	550V	20A (Tc)	10V	5V @ 250µA	56nC @ 10V	1480pF @ 25V	±30V	-	192W (Tc)	250 mOhm @ 10A, 10V	-65°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STP11NM60FD	STMicroelectronics	MOSFET N-CH 600V 11A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.5A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock192,996	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	5V @ 250µA	40nC @ 10V	900pF @ 25V	±30V	-	160W (Tc)	450 mOhm @ 5.5A, 10V	-	Through Hole	TO-220AB	TO-220-3
STU16N65M5	STMicroelectronics	MOSFET N-CH 650V 12A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 299 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock5,584	MOSFET (Metal Oxide)	650V	12A (Tc)	10V	5V @ 250µA	45nC @ 10V	1250pF @ 100V	±25V	-	90W (Tc)	299 mOhm @ 6A, 10V	150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STW13N95K3	STMicroelectronics	MOSFET N-CH 950V 10A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock396,564	MOSFET (Metal Oxide)	950V	10A (Tc)	10V	5V @ 100µA	51nC @ 10V	1620pF @ 100V	±30V	-	190W (Tc)	850 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3