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Taiwan Semiconductor Corporation |
DIODE, ZENER, 56V, 1000MW, %, AE
- Voltage - Zener (Nom) (Vz): 56V
- Tolerance: ±7.14%
- Power - Max: 1W
- Impedance (Max) (Zzt): 60 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 43V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
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Package: DO-219AB |
Stock3,872 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 100V, 1000MW, 5%,
- Voltage - Zener (Nom) (Vz): 100V
- Tolerance: ±5%
- Power - Max: 1W
- Impedance (Max) (Zzt): 350 Ohms
- Current - Reverse Leakage @ Vr: 5µA @ 76V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
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Package: DO-204AL, DO-41, Axial |
Stock3,232 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 47V, 1000MW, 5%, M
- Voltage - Zener (Nom) (Vz): 47V
- Tolerance: ±5%
- Power - Max: 1W
- Impedance (Max) (Zzt): 80 Ohms
- Current - Reverse Leakage @ Vr: 5µA @ 35.8V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF
- Supplier Device Package: MELF
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Package: DO-213AB, MELF |
Stock3,728 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 10V, 500MW, 5%, SO
- Voltage - Zener (Nom) (Vz): 10V
- Tolerance: ±5%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 17 Ohms
- Current - Reverse Leakage @ Vr: 3µA @ 8V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123F
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Package: SOD-123F |
Stock5,248 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 15V, 500MW, 2%, QM
- Voltage - Zener (Nom) (Vz): 15V
- Tolerance: ±2%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 30 Ohms
- Current - Reverse Leakage @ Vr: 100nA @ 11V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-80 Variant
- Supplier Device Package: Mini MELF
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Package: SOD-80 Variant |
Stock4,032 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 5.6V, 500MW, 2%, D
- Voltage - Zener (Nom) (Vz): 5.6V
- Tolerance: ±2%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 40 Ohms
- Current - Reverse Leakage @ Vr: 2mA @ 1V
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
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Package: DO-204AH, DO-35, Axial |
Stock5,424 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 10V, 500MW, 2%, DO
- Voltage - Zener (Nom) (Vz): 10V
- Tolerance: ±2%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 20 Ohms
- Current - Reverse Leakage @ Vr: 7mA @ 200mV
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
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Package: DO-204AH, DO-35, Axial |
Stock3,168 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 28V, 500MW, 5%, DO
- Voltage - Zener (Nom) (Vz): 28V
- Tolerance: ±5%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 44 Ohms
- Current - Reverse Leakage @ Vr: 100nA @ 21V
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
- Operating Temperature: 100°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
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Package: DO-204AH, DO-35, Axial |
Stock3,808 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 15V, 500MW, 2%, SO
- Voltage - Zener (Nom) (Vz): 15V
- Tolerance: ±2%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 30 Ohms
- Current - Reverse Leakage @ Vr: 45nA @ 10.5V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123F
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Package: SOD-123F |
Stock7,936 |
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Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 25A,
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-Square, GBPC-W
- Supplier Device Package: GBPC-W
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Package: 4-Square, GBPC-W |
Stock5,904 |
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Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, SCHOTTKY BRIDG
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 60V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
- Current - Reverse Leakage @ Vr: 500µA @ 60V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Gull Wing
- Supplier Device Package: ABS
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Package: 4-SMD, Gull Wing |
Stock3,424 |
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Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, , 0.8A, 200V,
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 200V
- Current - Average Rectified (Io): 800mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-BESOP (0.173", 4.40mm Width)
- Supplier Device Package: MBS
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Package: 4-BESOP (0.173", 4.40mm Width) |
Stock3,680 |
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Taiwan Semiconductor Corporation |
DIODE
- Diode Configuration: -
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io) (per Diode): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Operating Temperature - Junction: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 17pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
6A, 800V, STANDARD BRIDGE RECTIF
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800 V
- Current - Average Rectified (Io): 6 A
- Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, KBJL
- Supplier Device Package: KBJL
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Package: - |
Stock6,000 |
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Taiwan Semiconductor Corporation |
25NS, 2A, 200V, ULTRA FAST RECOV
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 200 V
- Capacitance @ Vr, F: 31pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123H
- Supplier Device Package: SOD-123HE
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock60,000 |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 1A DO214AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 150 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
SOT-323, 50V, 0.5A, NPN BIPOLAR
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Power - Max: 200 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
SOD-123, 500MW, 5%, SMALL SIGNAL
- Voltage - Zener (Nom) (Vz): 27 V
- Tolerance: ±5%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): -
- Current - Reverse Leakage @ Vr: 10 nA @ 20.4 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 1KV 25A GBU
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1 kV
- Current - Average Rectified (Io): 25 A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
- Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBU
- Supplier Device Package: GBU
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Package: - |
Stock1,710 |
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Taiwan Semiconductor Corporation |
DIODE ARRAY GP 50V 10A TO220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io) (per Diode): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 975 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 50 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
SOD-123, 410MW, 2%, SMALL SIGNAL
- Voltage - Zener (Nom) (Vz): 8.2 V
- Tolerance: ±2%
- Power - Max: 410 mW
- Impedance (Max) (Zzt): 15 Ohms
- Current - Reverse Leakage @ Vr: 700 nA @ 5 V
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
40V, 54A, SINGLE N-CHANNEL POWER
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Vgs(th) (Max) @ Id: 3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1233 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 36W (Tc)
- Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (3.1x3.1)
- Package / Case: 8-PowerWDFN
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Package: - |
Stock29,712 |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 2A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 20 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 100 V
- Capacitance @ Vr, F: 25pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock18,000 |
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Taiwan Semiconductor Corporation |
50NS, 16A, 400V, HIGH EFFICIENT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 400 V
- Capacitance @ Vr, F: 150pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock3,000 |
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Taiwan Semiconductor Corporation |
DIODE ZENER 27V 500MW 1206
- Voltage - Zener (Nom) (Vz): 27 V
- Tolerance: ±5%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 80 Ohms
- Current - Reverse Leakage @ Vr: 100 nA @ 20 V
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 1206 (3216 Metric)
- Supplier Device Package: 1206
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 2A DO214AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 150 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
QMMELF, 500MW, 5%, SMALL SIGNAL
- Voltage - Zener (Nom) (Vz): 30 V
- Tolerance: ±5%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 80 Ohms
- Current - Reverse Leakage @ Vr: 100 nA @ 22 V
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-80 Variant
- Supplier Device Package: QMMELF
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Package: - |
Request a Quote |
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