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Taiwan Semiconductor Corporation |
DIODE, ZENER, 200V, 2000MW, %, A
- Voltage - Zener (Nom) (Vz): 200V
- Tolerance: ±5%
- Power - Max: 2W
- Impedance (Max) (Zzt): 900 Ohms
- Current - Reverse Leakage @ Vr: 500nA @ 152V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
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Package: DO-204AC, DO-15, Axial |
Stock2,304 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 6.8V, 1000MW, %, A
- Voltage - Zener (Nom) (Vz): 6.8V
- Tolerance: ±5.88%
- Power - Max: 1W
- Impedance (Max) (Zzt): 3 Ohms
- Current - Reverse Leakage @ Vr: 10µA @ 3V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
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Package: DO-219AB |
Stock2,992 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 24V, 500MW, 2%, DO
- Voltage - Zener (Nom) (Vz): 24V
- Tolerance: ±2%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 70 Ohms
- Current - Reverse Leakage @ Vr: 16.8mA @ 50mV
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
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Package: DO-204AH, DO-35, Axial |
Stock6,832 |
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Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 6A,
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 200V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBU
- Supplier Device Package: GBU
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Package: 4-SIP, GBU |
Stock2,336 |
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Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 4A,
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBL
- Supplier Device Package: GBL
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Package: 4-SIP, GBL |
Stock6,256 |
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Taiwan Semiconductor Corporation |
IC REG LINEAR 150MA
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 150mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock6,512 |
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Taiwan Semiconductor Corporation |
HALL EFFECT SWITCH, LATCH, 4 - 3
- Function: -
- Technology: -
- Polarization: -
- Sensing Range: -
- Test Condition: -
- Voltage - Supply: -
- Current - Supply (Max): -
- Current - Output (Max): -
- Output Type: -
- Features: -
- Operating Temperature: -
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,284 |
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Taiwan Semiconductor Corporation |
VOLTAGE REFERENCE, PROGRAMMABLE,
- Reference Type: -
- Output Type: -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Current - Output: -
- Tolerance: -
- Temperature Coefficient: -
- Noise - 0.1Hz to 10Hz: -
- Noise - 10Hz to 10kHz: -
- Voltage - Input: -
- Current - Supply: -
- Current - Cathode: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock7,184 |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 4A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 4 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5 µs
- Current - Reverse Leakage @ Vr: 10 µA @ 50 V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE ZENER 13V 1W SOD123W
- Voltage - Zener (Nom) (Vz): 13 V
- Tolerance: ±5%
- Power - Max: 1 W
- Impedance (Max) (Zzt): 10 Ohms
- Current - Reverse Leakage @ Vr: 2 µA @ 10 V
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD-123W
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Package: - |
Stock64,545 |
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Taiwan Semiconductor Corporation |
SOD-523F, 200MW, 5%, SMALL SIGNA
- Voltage - Zener (Nom) (Vz): 5.1 V
- Tolerance: ±5%
- Power - Max: 200 mW
- Impedance (Max) (Zzt): 60 Ohms
- Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SOD-523F
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 5A ITO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 30 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE ARR SCHOTT 200V ITO220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io) (per Diode): 15A
- Voltage - Forward (Vf) (Max) @ If: 960 mV @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 200 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AB
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 15A TO220AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 920 mV @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock5,202 |
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Taiwan Semiconductor Corporation |
SOD-523F, 200MW, 5%, SMALL SIGNA
- Voltage - Zener (Nom) (Vz): 24 V
- Tolerance: ±5%
- Power - Max: 200 mW
- Impedance (Max) (Zzt): 70 Ohms
- Current - Reverse Leakage @ Vr: 100 nA @ 19 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SOD-523F
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DO-35, 500MW, 2%, SMALL SIGNAL Z
- Voltage - Zener (Nom) (Vz): 75 V
- Tolerance: ±2%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 255 Ohms
- Current - Reverse Leakage @ Vr: 0.05 µA @ 52.5 V
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DO-35, 500MW, 2%, SMALL SIGNAL Z
- Voltage - Zener (Nom) (Vz): 33 V
- Tolerance: ±2%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 80 Ohms
- Current - Reverse Leakage @ Vr: 0.05 µA @ 23.1 V
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 500MA SUB SMA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Capacitance @ Vr, F: 4pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock60,000 |
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Taiwan Semiconductor Corporation |
DIODE ARRAY GP 100V 5A ITO220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io) (per Diode): 5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2.5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 100 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AB
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
10A, 150V, TRENCH SCHOTTKY
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 µA @ 150 V
- Capacitance @ Vr, F: 540pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252 (DPAK)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE BRIDGE 1A 50V DBL
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 50 V
- Current - Average Rectified (Io): 1 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Current - Reverse Leakage @ Vr: 2 µA @ 50 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-DIP (0.300", 7.62mm)
- Supplier Device Package: DBL
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
SUB SMA, 1000MW, 6%, ZENER DIODE
- Voltage - Zener (Nom) (Vz): 74.5 V
- Tolerance: ±6.04%
- Power - Max: 1 W
- Impedance (Max) (Zzt): 100 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 56 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: Sub SMA
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE ZENER 5W DO214AB
- Voltage - Zener (Nom) (Vz): 13 V
- Tolerance: ±5%
- Power - Max: 5 W
- Impedance (Max) (Zzt): 3 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 9.9 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 4A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 500 V
- Capacitance @ Vr, F: 80pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DO-214AB (SMC), 5000MW, 5%, ZENE
- Voltage - Zener (Nom) (Vz): 36 V
- Tolerance: ±5%
- Power - Max: 5 W
- Impedance (Max) (Zzt): 11 Ohms
- Current - Reverse Leakage @ Vr: 500 nA @ 27.4 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1.5A DO204AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 35pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
40A, 600V, STANDARD BRIDGE RECTI
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600 V
- Current - Average Rectified (Io): 40 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 4-Square, GBPC
- Supplier Device Package: GBPC
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Package: - |
Stock570 |
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Taiwan Semiconductor Corporation |
650V, 4A, SINGLE N-CHANNEL POWER
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.46 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 3.37Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251 (IPAK)
- Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
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Package: - |
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