|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 51V, 1000MW, %, SU
- Voltage - Zener (Nom) (Vz): 51V
- Tolerance: ±5.88%
- Power - Max: 1W
- Impedance (Max) (Zzt): 60 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 39V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
|
Package: DO-219AB |
Stock2,000 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 51V, 1000MW, %, SO
- Voltage - Zener (Nom) (Vz): 51V
- Tolerance: ±5%
- Power - Max: 1W
- Impedance (Max) (Zzt): 60 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 39V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD123W
|
Package: SOD-123W |
Stock3,872 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 51V, 2000MW, %, DO
- Voltage - Zener (Nom) (Vz): 51V
- Tolerance: ±5%
- Power - Max: 2W
- Impedance (Max) (Zzt): 48 Ohms
- Current - Reverse Leakage @ Vr: 500nA @ 38.8V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
|
Package: DO-204AC, DO-15, Axial |
Stock3,792 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 120V, 1000MW, %, S
- Voltage - Zener (Nom) (Vz): 120.5V
- Tolerance: ±5.39%
- Power - Max: 1W
- Impedance (Max) (Zzt): 300 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 91V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
|
Package: DO-219AB |
Stock2,416 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 13V, 1000MW, %, DO
- Voltage - Zener (Nom) (Vz): 13V
- Tolerance: ±5%
- Power - Max: 1.25W
- Impedance (Max) (Zzt): 10 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 9.9V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
|
Package: DO-214AC, SMA |
Stock4,544 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE, ZENER, 39V, 200MW, 5%, SO
- Voltage - Zener (Nom) (Vz): 39V
- Tolerance: ±5%
- Power - Max: 200mW
- Impedance (Max) (Zzt): 130 Ohms
- Current - Reverse Leakage @ Vr: 45nA @ 27.3V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: SOD-323F
|
Package: SC-90, SOD-323F |
Stock3,168 |
|
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 25A,
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 100V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: QC Terminal
- Package / Case: 4-Square, GBPC
- Supplier Device Package: GBPC
|
Package: 4-Square, GBPC |
Stock6,480 |
|
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 4A,
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
- Current - Reverse Leakage @ Vr: 5µA @ 800V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBU
- Supplier Device Package: GBU
|
Package: 4-SIP, GBU |
Stock4,144 |
|
|
|
Taiwan Semiconductor Corporation |
DO-204AL (DO-41), 1000MW, 5%, SM
- Voltage - Zener (Nom) (Vz): 56 V
- Tolerance: ±5%
- Power - Max: 1 W
- Impedance (Max) (Zzt): 110 Ohms
- Current - Reverse Leakage @ Vr: 5 µA @ 42.6 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -65°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
SOD-323F, 200MW, 5%, ZENER DIODE
- Voltage - Zener (Nom) (Vz): 6.8 V
- Tolerance: ±5%
- Power - Max: 200 mW
- Impedance (Max) (Zzt): 10 Ohms
- Current - Reverse Leakage @ Vr: 500 nA @ 4 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: SOD-323F
|
Package: - |
Stock9,000 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 5A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 300 V
- Capacitance @ Vr, F: 80pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
SUB SMA, 800MW, 6%, ZENER DIODE
- Voltage - Zener (Nom) (Vz): 39 V
- Tolerance: ±5%
- Power - Max: 1 W
- Impedance (Max) (Zzt): 40 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: Sub SMA
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
DO-34, 500MW, 2%, SMALL SIGNAL Z
- Voltage - Zener (Nom) (Vz): 10.45 V
- Tolerance: ±2%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 30 Ohms
- Current - Reverse Leakage @ Vr: 200 nA @ 8 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AG, DO-34, Axial
- Supplier Device Package: DO-34
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
MMELF, 500MW, 2%, SMALL SIGNAL Z
- Voltage - Zener (Nom) (Vz): 15 V
- Tolerance: ±2%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 30 Ohms
- Current - Reverse Leakage @ Vr: 100 nA @ 11 V
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-213AC, MINI-MELF, SOD-80
- Supplier Device Package: Mini MELF
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
DIODE ZENER 16V 1.25W DO214AC
- Voltage - Zener (Nom) (Vz): 16 V
- Tolerance: ±5%
- Power - Max: 1.25 W
- Impedance (Max) (Zzt): 16 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
|
Package: - |
Stock90 |
|
|
|
Taiwan Semiconductor Corporation |
DO-34, 500MW, 2%, SMALL SIGNAL Z
- Voltage - Zener (Nom) (Vz): 29.77 V
- Tolerance: ±2%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 55 Ohms
- Current - Reverse Leakage @ Vr: 200 nA @ 23 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AG, DO-34, Axial
- Supplier Device Package: DO-34
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1A DO214AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Capacitance @ Vr, F: 18pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
35NS, 1A, 200V, SUPER FAST RECOV
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTT 30V 200MA MINI MELF
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 25 V
- Capacitance @ Vr, F: 10pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AC, MINI-MELF, SOD-80
- Supplier Device Package: Mini MELF
- Operating Temperature - Junction: 125°C (Max)
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
SOT-23, -50V, -0.1A, PNP BIPOLAR
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 200 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 1A MICRO SMA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 80 µA @ 60 V
- Capacitance @ Vr, F: 95pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: Micro SMA
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: - |
Stock35,652 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 600MA TS-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 600mA
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 15 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 9pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: T-18, Axial
- Supplier Device Package: TS-1
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock15,000 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 8A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 800 V
- Capacitance @ Vr, F: 48pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock9,000 |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 10A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 150 V
- Capacitance @ Vr, F: 70pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
DIODE ARR SCHOT 200V 20A TO220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io) (per Diode): 20A
- Voltage - Forward (Vf) (Max) @ If: 970 mV @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 2A DO214AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 150 V
- Capacitance @ Vr, F: 25pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
SOD-323F, 200MW, 5%, ZENER DIODE
- Voltage - Zener (Nom) (Vz): 5.1 V
- Tolerance: ±5%
- Power - Max: 200 mW
- Impedance (Max) (Zzt): 50 Ohms
- Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: SOD-323F
|
Package: - |
Request a Quote |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 3A DO201AD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|