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Taiwan Semiconductor Corporation |
DIODE, ZENER, 33V, 1000MW, %, AE
- Voltage - Zener (Nom) (Vz): 33V
- Tolerance: ±6.06%
- Power - Max: 1W
- Impedance (Max) (Zzt): 15 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 24V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
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Package: DO-219AB |
Stock3,632 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 180V, 800MW, %, SU
- Voltage - Zener (Nom) (Vz): 180V
- Tolerance: ±6.38%
- Power - Max: 800mW
- Impedance (Max) (Zzt): 450 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 130V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
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Package: DO-219AB |
Stock6,048 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 10V, 500MW, 5%, 12
- Voltage - Zener (Nom) (Vz): 10V
- Tolerance: ±5%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 15 Ohms
- Current - Reverse Leakage @ Vr: 100nA @ 7.5V
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 1206 (3216 Metric)
- Supplier Device Package: 1206
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Package: 1206 (3216 Metric) |
Stock7,920 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 25.62V, 500MW, %,
- Voltage - Zener (Nom) (Vz): 25.62V
- Tolerance: ±2%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 45 Ohms
- Current - Reverse Leakage @ Vr: 200nA @ 21V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AG, DO-34, Axial
- Supplier Device Package: DO-34
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Package: DO-204AG, DO-34, Axial |
Stock6,512 |
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Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 40A,
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 100V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
- Current - Reverse Leakage @ Vr: 10µA @ 1000V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: QC Terminal
- Package / Case: 4-Square, GBPC40
- Supplier Device Package: GBPC40
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Package: 4-Square, GBPC40 |
Stock4,032 |
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Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 8A,
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 400V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBU
- Supplier Device Package: GBU
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Package: 4-SIP, GBU |
Stock6,560 |
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Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 1.5A
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1000V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
- Current - Reverse Leakage @ Vr: 2µA @ 1000V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Gull Wing
- Supplier Device Package: DBLS
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Package: 4-SMD, Gull Wing |
Stock4,320 |
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Taiwan Semiconductor Corporation |
DIODE ZENER 27V 3W DO214AA
- Voltage - Zener (Nom) (Vz): 27 V
- Tolerance: ±5%
- Power - Max: 3 W
- Impedance (Max) (Zzt): 23 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 20.6 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
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Package: - |
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Taiwan Semiconductor Corporation |
SOT-223, -500V, -0.15A, PNP BIPO
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150 mA
- Voltage - Collector Emitter Breakdown (Max): 500 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 10V
- Power - Max: 1 W
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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Package: - |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 5A DO214AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 5A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5 µs
- Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock47,520 |
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Taiwan Semiconductor Corporation |
DIODE ARR SCHOT 100V 20A TO247AD
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io) (per Diode): 20A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 100 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (TO-3P)
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Package: - |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 5A DO214AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 20 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
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Taiwan Semiconductor Corporation |
SOD-323F, 200MW, 2%, SMALL SIGNA
- Voltage - Zener (Nom) (Vz): 62 V
- Tolerance: ±2%
- Power - Max: 200 mW
- Impedance (Max) (Zzt): 215 Ohms
- Current - Reverse Leakage @ Vr: 45 nA @ 43.4 V
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: SOD-323F
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 600V 3A YBS
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600 V
- Current - Average Rectified (Io): 3 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: YBS
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE ZENER 39V 5W DO214AB
- Voltage - Zener (Nom) (Vz): 39 V
- Tolerance: ±5%
- Power - Max: 5 W
- Impedance (Max) (Zzt): 14 Ohms
- Current - Reverse Leakage @ Vr: 500 nA @ 29.7 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF
- Supplier Device Package: MELF
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE ARR SCHOT 30V 200MA SOT363
- Diode Configuration: 2 Pair Series Connection
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io) (per Diode): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 25 V
- Operating Temperature - Junction: -65°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 10A ITO220AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 80 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 800 V
- Capacitance @ Vr, F: 40pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock3,000 |
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Taiwan Semiconductor Corporation |
80NS, 16A, 600V, HIGH EFFICIENT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 80 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: 110pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock3,000 |
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Taiwan Semiconductor Corporation |
3A, 100V, SCHOTTKY RECTIFIER
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 880 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 100 V
- Capacitance @ Vr, F: 54pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: Thin SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
SOD-123, 40V, 0.35A, SCHOTTKY DI
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 350mA
- Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 40 V
- Capacitance @ Vr, F: 50pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
- Operating Temperature - Junction: 125°C
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Package: - |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 2A DO204AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: - |
Stock31,500 |
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Taiwan Semiconductor Corporation |
SOD-123, 410MW, 2%, SMALL SIGNAL
- Voltage - Zener (Nom) (Vz): 68 V
- Tolerance: ±2%
- Power - Max: 410 mW
- Impedance (Max) (Zzt): 240 Ohms
- Current - Reverse Leakage @ Vr: 45 nA @ 47.6 V
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123F
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Package: - |
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Taiwan Semiconductor Corporation |
15A, 600V, STANDARD BRIDGE RECTI
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600 V
- Current - Average Rectified (Io): 15 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 4-Square, GBPC-M
- Supplier Device Package: GBPC-M
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Package: - |
Stock588 |
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Taiwan Semiconductor Corporation |
20A, 200V, TRENCH SCHOTTKY
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 µA @ 200 V
- Capacitance @ Vr, F: 880pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252 (DPAK)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
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Taiwan Semiconductor Corporation |
DIODE ZENER 62V 1.25W DO214AC
- Voltage - Zener (Nom) (Vz): 62 V
- Tolerance: ±5%
- Power - Max: 1.25 W
- Impedance (Max) (Zzt): 125 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 47.1 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
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Package: - |
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Taiwan Semiconductor Corporation |
50NS, 1A, 300V, HIGH EFFICIENT R
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 300 V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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