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Taiwan Semiconductor Corporation |
DIODE, ZENER, 12V, 1000MW, %, SU
- Voltage - Zener (Nom) (Vz): 12.05V
- Tolerance: ±5.39%
- Power - Max: 1W
- Impedance (Max) (Zzt): 7 Ohms
- Current - Reverse Leakage @ Vr: 3µA @ 9.1V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
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Package: DO-219AB |
Stock3,568 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 130V, 1500MW, 5%,
- Voltage - Zener (Nom) (Vz): 130V
- Tolerance: ±5%
- Power - Max: 1.5W
- Impedance (Max) (Zzt): 450 Ohms
- Current - Reverse Leakage @ Vr: 500nA @ 98.8V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
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Package: DO-214AC, SMA |
Stock7,216 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 51V, 800MW, %, SUB
- Voltage - Zener (Nom) (Vz): 51V
- Tolerance: ±5.88%
- Power - Max: 800mW
- Impedance (Max) (Zzt): 60 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 39V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
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Package: DO-219AB |
Stock5,952 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 3.3V, 500MW, 5%, 0
- Voltage - Zener (Nom) (Vz): 3.3V
- Tolerance: ±5%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 85 Ohms
- Current - Reverse Leakage @ Vr: 2µA @ 1V
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 0805 (2012 Metric)
- Supplier Device Package: 0805
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Package: 0805 (2012 Metric) |
Stock6,928 |
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Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 1.5A
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 200V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
- Current - Reverse Leakage @ Vr: 2µA @ 200V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Gull Wing
- Supplier Device Package: DBLS
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Package: 4-SMD, Gull Wing |
Stock3,472 |
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Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, FAST, 1.5A, 10
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1000V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
- Current - Reverse Leakage @ Vr: 1µA @ 1000V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Gull Wing
- Supplier Device Package: ABS-L
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Package: 4-SMD, Gull Wing |
Stock4,448 |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1.2KV 15A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 65 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
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Taiwan Semiconductor Corporation |
DIODE ARR SCHOT 100V 16A TO263AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io) (per Diode): 16A
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 100 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
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Package: - |
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Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 50V 4A KBL
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 50 V
- Current - Average Rectified (Io): 4 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
- Current - Reverse Leakage @ Vr: 10 µA @ 50 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, KBL
- Supplier Device Package: KBL
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 5A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 400 V
- Capacitance @ Vr, F: 80pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock2,658 |
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Taiwan Semiconductor Corporation |
SOD-123, 350MW, 5%, SMALL SIGNAL
- Voltage - Zener (Nom) (Vz): 12 V
- Tolerance: ±5%
- Power - Max: 350 mW
- Impedance (Max) (Zzt): 25 Ohms
- Current - Reverse Leakage @ Vr: 100 nA @ 8 V
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
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Package: - |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 5A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5 µs
- Current - Reverse Leakage @ Vr: 10 µA @ 800 V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock1,620 |
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Taiwan Semiconductor Corporation |
2A, 1000V, STANDARD RECOVERY REC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
- Capacitance @ Vr, F: 12pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: SOD-128
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock84,000 |
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Taiwan Semiconductor Corporation |
4A, 600V, STANDARD RECOVERY RECT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 4 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5 µs
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock9,000 |
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Taiwan Semiconductor Corporation |
SOD-323F, 200MW, 2%, SMALL SIGNA
- Voltage - Zener (Nom) (Vz): 16 V
- Tolerance: ±2%
- Power - Max: 200 mW
- Impedance (Max) (Zzt): 40 Ohms
- Current - Reverse Leakage @ Vr: 45 nA @ 11.2 V
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: SOD-323F
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE ZENER 13V 3W DO214AA
- Voltage - Zener (Nom) (Vz): 13 V
- Tolerance: ±5%
- Power - Max: 3 W
- Impedance (Max) (Zzt): 7 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 9.9 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
600V, 11A, SINGLE N-CHANNEL POWE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock14,970 |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1.5A DO204AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 250 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock21,000 |
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Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 400V 2A DBLS
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 400 V
- Current - Average Rectified (Io): 2 A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
- Current - Reverse Leakage @ Vr: 2 µA @ 400 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Gull Wing
- Supplier Device Package: DBLS
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Package: - |
Stock8,550 |
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Taiwan Semiconductor Corporation |
DIODE ZENER 20V 1W SUB SMA
- Voltage - Zener (Nom) (Vz): 20 V
- Tolerance: ±6%
- Power - Max: 1 W
- Impedance (Max) (Zzt): 15 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 15 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
SOD-123, 500MW, 5%, SMALL SIGNAL
- Voltage - Zener (Nom) (Vz): 16 V
- Tolerance: ±5%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): -
- Current - Reverse Leakage @ Vr: 1 µA @ 12.1 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE ARR SCHOTT 45V 10A TO263AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 45 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 1A SUB SMA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 90 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock33,318 |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 4A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 400 V
- Capacitance @ Vr, F: 65pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
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Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 1KV 6A KBU
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1 kV
- Current - Average Rectified (Io): 6 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, KBU
- Supplier Device Package: KBU
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Package: - |
Stock2,910 |
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Taiwan Semiconductor Corporation |
SOD-523F, 150MW, 2%, SMALL SIGNA
- Voltage - Zener (Nom) (Vz): 2.7 V
- Tolerance: ±2%
- Power - Max: 150 mW
- Impedance (Max) (Zzt): 100 Ohms
- Current - Reverse Leakage @ Vr: 20 µA @ 1 V
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SOD-523F
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Package: - |
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Taiwan Semiconductor Corporation |
DIODE ZENER 5W DO214AB
- Voltage - Zener (Nom) (Vz): 39 V
- Tolerance: ±5%
- Power - Max: 5 W
- Impedance (Max) (Zzt): 14 Ohms
- Current - Reverse Leakage @ Vr: 500 nA @ 29.7 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
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Package: - |
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Taiwan Semiconductor Corporation |
DIODE ARR SCHOT 30V 200MA SOT363
- Diode Configuration: 2 Pair Common Anode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io) (per Diode): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 25 V
- Operating Temperature - Junction: -65°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: - |
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