|
|
Toshiba Semiconductor and Storage |
TRANS PNP 800MA 120V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
- Power - Max: 900mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: LSTM
|
Package: TO-226-3, TO-92-3 Long Body |
Stock4,176 |
|
800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | LSTM |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 800MA 120V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
- Power - Max: 900mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: LSTM
|
Package: TO-226-3, TO-92-3 Long Body |
Stock6,896 |
|
800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | LSTM |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 800MA 120V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
- Power - Max: 900mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: LSTM
|
Package: TO-226-3, TO-92-3 Long Body |
Stock6,544 |
|
800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | LSTM |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 800MA 120V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
- Power - Max: 900mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: LSTM
|
Package: TO-226-3, TO-92-3 Long Body |
Stock3,456 |
|
800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | LSTM |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 800MA 120V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
- Power - Max: 900mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: LSTM
|
Package: TO-226-3, TO-92-3 Long Body |
Stock6,208 |
|
800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | LSTM |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 800MA 120V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
- Power - Max: 900mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: LSTM
|
Package: TO-226-3, TO-92-3 Long Body |
Stock3,056 |
|
800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | LSTM |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 800MA 120V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
- Power - Max: 900mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: LSTM
|
Package: TO-226-3, TO-92-3 Long Body |
Stock2,656 |
|
800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | LSTM |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 800MA 120V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
- Power - Max: 900mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: LSTM
|
Package: TO-226-3, TO-92-3 Long Body |
Stock5,888 |
|
800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | LSTM |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 50MA 150V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Power - Max: 800mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
|
Package: TO-226-3, TO-92-3 Long Body |
Stock4,096 |
|
50mA | 150V | 800mV @ 1mA, 10A | 100nA (ICBO) | 70 @ 10mA, 5V | 800mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 50MA 150V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Power - Max: 800mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
|
Package: TO-226-3, TO-92-3 Long Body |
Stock2,240 |
|
50mA | 150V | 800mV @ 1mA, 10A | 100nA (ICBO) | 70 @ 10mA, 5V | 800mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 50MA 150V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Power - Max: 800mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
|
Package: TO-226-3, TO-92-3 Long Body |
Stock5,744 |
|
50mA | 150V | 800mV @ 1mA, 10A | 100nA (ICBO) | 70 @ 10mA, 5V | 800mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 50MA 150V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Power - Max: 800mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
|
Package: TO-226-3, TO-92-3 Long Body |
Stock6,240 |
|
50mA | 150V | 800mV @ 1mA, 10A | 100nA (ICBO) | 70 @ 10mA, 5V | 800mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 50MA 150V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Power - Max: 800mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
|
Package: TO-226-3, TO-92-3 Long Body |
Stock6,336 |
|
50mA | 150V | 800mV @ 1mA, 10A | 100nA (ICBO) | 70 @ 10mA, 5V | 800mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 50MA 150V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Power - Max: 800mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
|
Package: TO-226-3, TO-92-3 Long Body |
Stock2,192 |
|
50mA | 150V | 800mV @ 1mA, 10A | 100nA (ICBO) | 70 @ 10mA, 5V | 800mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 50MA 150V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Power - Max: 800mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
|
Package: TO-226-3, TO-92-3 Long Body |
Stock4,400 |
|
50mA | 150V | 800mV @ 1mA, 10A | 100nA (ICBO) | 70 @ 10mA, 5V | 800mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 50MA 150V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Power - Max: 800mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
|
Package: TO-226-3, TO-92-3 Long Body |
Stock3,424 |
|
50mA | 150V | 800mV @ 1mA, 10A | 100nA (ICBO) | 70 @ 10mA, 5V | 800mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 50MA 150V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Power - Max: 800mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
|
Package: TO-226-3, TO-92-3 Long Body |
Stock5,856 |
|
50mA | 150V | 800mV @ 1mA, 10A | 100nA (ICBO) | 70 @ 10mA, 5V | 800mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 500MA 400V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 20mA, 5V
- Power - Max: 900mW
- Frequency - Transition: 35MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
|
Package: TO-226-3, TO-92-3 Long Body |
Stock2,544 |
|
500mA | 400V | 1V @ 10mA, 100mA | 10µA (ICBO) | 140 @ 20mA, 5V | 900mW | 35MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 500MA 400V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 20mA, 5V
- Power - Max: 900mW
- Frequency - Transition: 35MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
|
Package: TO-226-3, TO-92-3 Long Body |
Stock7,184 |
|
500mA | 400V | 1V @ 10mA, 100mA | 10µA (ICBO) | 140 @ 20mA, 5V | 900mW | 35MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 5A 50V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
- Power - Max: 2W
- Frequency - Transition: 60MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock7,344 |
|
5A | 50V | 400mV @ 200mA, 2A | 1µA (ICBO) | 100 @ 1A, 1V | 2W | 60MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 5A 50V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
- Power - Max: 2W
- Frequency - Transition: 60MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock7,168 |
|
5A | 50V | 400mV @ 200mA, 2A | 1µA (ICBO) | 100 @ 1A, 1V | 2W | 60MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 5A 50V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
- Power - Max: 2W
- Frequency - Transition: 60MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock4,368 |
|
5A | 50V | 400mV @ 200mA, 2A | 1µA (ICBO) | 100 @ 1A, 1V | 2W | 60MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 5A 50V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
- Power - Max: 2W
- Frequency - Transition: 60MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock5,488 |
|
5A | 50V | 400mV @ 200mA, 2A | 1µA (ICBO) | 100 @ 1A, 1V | 2W | 60MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 5A 50V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
- Power - Max: 2W
- Frequency - Transition: 60MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock2,928 |
|
5A | 50V | 400mV @ 200mA, 2A | 1µA (ICBO) | 100 @ 1A, 1V | 2W | 60MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 5A 50V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
- Power - Max: 2W
- Frequency - Transition: 60MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock5,344 |
|
5A | 50V | 400mV @ 200mA, 2A | 1µA (ICBO) | 100 @ 1A, 1V | 2W | 60MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 5A 50V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
- Power - Max: 2W
- Frequency - Transition: 60MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock2,656 |
|
5A | 50V | 400mV @ 200mA, 2A | 1µA (ICBO) | 100 @ 1A, 1V | 2W | 60MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 5A 50V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
- Power - Max: 2W
- Frequency - Transition: 60MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock4,720 |
|
5A | 50V | 400mV @ 200mA, 2A | 1µA (ICBO) | 100 @ 1A, 1V | 2W | 60MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 5A 50V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
- Power - Max: 2W
- Frequency - Transition: 60MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock6,976 |
|
5A | 50V | 400mV @ 200mA, 2A | 1µA (ICBO) | 100 @ 1A, 1V | 2W | 60MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |