|
|
Toshiba Semiconductor and Storage |
TRANS PNP 2A 180V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 180V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock6,592 |
|
2A | 180V | 1V @ 100mA, 1A | 5µA (ICBO) | 100 @ 100mA, 5V | 2W | 200MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 2A 180V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 180V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock7,632 |
|
2A | 180V | 1V @ 100mA, 1A | 5µA (ICBO) | 100 @ 100mA, 5V | 2W | 200MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 2A 180V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 180V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock2,480 |
|
2A | 180V | 1V @ 100mA, 1A | 5µA (ICBO) | 100 @ 100mA, 5V | 2W | 200MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 2A 180V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 180V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock5,984 |
|
2A | 180V | 1V @ 100mA, 1A | 5µA (ICBO) | 100 @ 100mA, 5V | 2W | 200MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 2A 180V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 180V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock5,216 |
|
2A | 180V | 1V @ 100mA, 1A | 5µA (ICBO) | 100 @ 100mA, 5V | 2W | 200MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 2A 180V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 180V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock6,080 |
|
2A | 180V | 1V @ 100mA, 1A | 5µA (ICBO) | 100 @ 100mA, 5V | 2W | 200MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 3A 50V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
- Power - Max: 10W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock3,248 |
|
3A | 50V | 600mV @ 200mA, 2A | 1µA (ICBO) | 70 @ 500mA, 2V | 10W | 100MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 3A 50V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
- Power - Max: 10W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock5,872 |
|
3A | 50V | 600mV @ 200mA, 2A | 1µA (ICBO) | 70 @ 500mA, 2V | 10W | 100MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 3A 50V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
- Power - Max: 10W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock5,808 |
|
3A | 50V | 600mV @ 200mA, 2A | 1µA (ICBO) | 70 @ 500mA, 2V | 10W | 100MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 3A 50V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
- Power - Max: 10W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock4,688 |
|
3A | 50V | 600mV @ 200mA, 2A | 1µA (ICBO) | 70 @ 500mA, 2V | 10W | 100MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 1A 230V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 230V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2W
- Frequency - Transition: 70MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock4,960 |
|
1A | 230V | 1.5V @ 50mA, 500mA | 1µA (ICBO) | 100 @ 100mA, 5V | 2W | 70MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 1A 230V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 230V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2W
- Frequency - Transition: 70MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock2,672 |
|
1A | 230V | 1.5V @ 50mA, 500mA | 1µA (ICBO) | 100 @ 100mA, 5V | 2W | 70MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 1A 230V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 230V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2W
- Frequency - Transition: 70MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock5,984 |
|
1A | 230V | 1.5V @ 50mA, 500mA | 1µA (ICBO) | 100 @ 100mA, 5V | 2W | 70MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 1A 230V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 230V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2W
- Frequency - Transition: 70MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock4,256 |
|
1A | 230V | 1.5V @ 50mA, 500mA | 1µA (ICBO) | 100 @ 100mA, 5V | 2W | 70MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 1A 230V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 230V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2W
- Frequency - Transition: 70MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock2,224 |
|
1A | 230V | 1.5V @ 50mA, 500mA | 1µA (ICBO) | 100 @ 100mA, 5V | 2W | 70MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 1A 230V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 230V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2W
- Frequency - Transition: 70MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock3,552 |
|
1A | 230V | 1.5V @ 50mA, 500mA | 1µA (ICBO) | 100 @ 100mA, 5V | 2W | 70MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 1A 230V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 230V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2W
- Frequency - Transition: 70MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock2,832 |
|
1A | 230V | 1.5V @ 50mA, 500mA | 1µA (ICBO) | 100 @ 100mA, 5V | 2W | 70MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 1A 230V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 230V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2W
- Frequency - Transition: 70MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock3,200 |
|
1A | 230V | 1.5V @ 50mA, 500mA | 1µA (ICBO) | 100 @ 100mA, 5V | 2W | 70MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 1A 230V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 230V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2W
- Frequency - Transition: 70MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock3,536 |
|
1A | 230V | 1.5V @ 50mA, 500mA | 1µA (ICBO) | 100 @ 100mA, 5V | 2W | 70MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 1A 230V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 230V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2W
- Frequency - Transition: 70MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock2,544 |
|
1A | 230V | 1.5V @ 50mA, 500mA | 1µA (ICBO) | 100 @ 100mA, 5V | 2W | 70MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 1A 230V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 230V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2W
- Frequency - Transition: 70MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock9,264 |
|
1A | 230V | 1.5V @ 50mA, 500mA | 1µA (ICBO) | 100 @ 100mA, 5V | 2W | 70MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 1A 230V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 230V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2W
- Frequency - Transition: 70MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock6,192 |
|
1A | 230V | 1.5V @ 50mA, 500mA | 1µA (ICBO) | 100 @ 100mA, 5V | 2W | 70MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 3A 50V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
|
Package: TO-226-3, TO-92-3 Long Body |
Stock7,424 |
|
3A | 50V | 500mV @ 75mA, 1.5A | 100nA (ICBO) | 120 @ 100mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 3A 50V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
|
Package: TO-226-3, TO-92-3 Long Body |
Stock3,152 |
|
3A | 50V | 500mV @ 75mA, 1.5A | 100nA (ICBO) | 120 @ 100mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 3A 50V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
|
Package: TO-226-3, TO-92-3 Long Body |
Stock4,816 |
|
3A | 50V | 500mV @ 75mA, 1.5A | 100nA (ICBO) | 120 @ 100mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 2A 50V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
|
Package: TO-226-3, TO-92-3 Long Body |
Stock3,872 |
|
2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 120 @ 100mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 2A 50V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Package: TO-226-3, TO-92-3 Long Body |
Stock6,944 |
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2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 120 @ 100mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
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Toshiba Semiconductor and Storage |
TRANS PNP 2A 50V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Package: TO-226-3, TO-92-3 Long Body |
Stock6,256 |
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2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 120 @ 100mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |