Page 2 - Toshiba Semiconductor and Storage Products - Memory

TC58CVG0S3HRAIG
Toshiba Semiconductor and Storage

1GB SERIAL NAND 24NM WSON8 3.3V

Package: 8-WDFN Exposed Pad

Stock2,448
TH58NVG4S0HTAK0
Toshiba Semiconductor and Storage

16GB SLC NAND TSOP 24NM 4K PAGE

Package: 48-TFSOP (0.724", 18.40mm Width)

Stock4,112
TH58NYG3S0HBAI6
Toshiba Semiconductor and Storage

IC EEPROM 8GBIT 25NS 67VFBGA

Package: 67-VFBGA

Stock7,536
THGBMHG8C2LBAIL
Toshiba Semiconductor and Storage

IC FLASH 256GBIT 52MHZ 153WFBGA

Package: 153-WFBGA

Stock6,944
THGBMHG7C1LBAIL
Toshiba Semiconductor and Storage

IC FLASH 128GBIT 52MHZ 153BGA

Package: 153-WFBGA

Stock6,976
THGBMHG6C1LBAIL
Toshiba Semiconductor and Storage

IC FLASH 64GBIT 52MHZ 153WFBGA

Package: 153-WFBGA

Stock15,768
THGBMDG5D1LBAIT
Toshiba Semiconductor and Storage

IC FLASH 32GBIT 52MHZ 153WFBGA

Package: 153-WFBGA

Stock3,984
TH58NVG3S0HTAI0
Toshiba Semiconductor and Storage

IC EEPROM 8GBIT 25NS 48TSOP

Package: 48-TFSOP (0.724", 18.40mm Width)

Stock4,160
TH58NVG3S0HTA00
Toshiba Semiconductor and Storage

IC EEPROM 8GBIT 25NS 48TSOP

Package: 48-TFSOP (0.724", 18.40mm Width)

Stock3,456
TH58BVG3S0HTA00
Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 48TSOP

Package: 48-TFSOP (0.724", 18.40mm Width)

Stock3,680
TC58NYG0S3HBAI6
Toshiba Semiconductor and Storage

IC EEPROM 1GBIT 25NS 67VFBGA

Package: 67-VFBGA

Stock2,864
TC58NVG2S0HTAI0
Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 48TSOP

Package: 48-TFSOP (0.724", 18.40mm Width)

Stock6,408
TC58NVG2S0HBAI4
Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 63TFBGA

Package: 63-VFBGA

Stock7,616
TC58NVG1S3HTA00
Toshiba Semiconductor and Storage

IC EEPROM 2GBIT 25NS 48TSOP

Package: 48-TFSOP (0.724", 18.40mm Width)

Stock63,360
TC58NVG0S3HTAI0
Toshiba Semiconductor and Storage

IC EEPROM 1GBIT 25NS 48TSOP

Package: 48-TFSOP (0.724", 18.40mm Width)

Stock16,188
TC58BVG1S3HBAI6
Toshiba Semiconductor and Storage

IC EEPROM 2GBIT 25NS 67VFBGA

Package: 67-VFBGA

Stock7,808
TH58NVG4S0FTA20
Toshiba Semiconductor and Storage

IC EEPROM 16GBIT 25NS 48TSOP

Package: 48-TFSOP (0.724", 18.40mm Width)

Stock4,832
TC58NVG1S3ETAI0
Toshiba Semiconductor and Storage

IC EEPROM 2GBIT 25NS 48TSOP

Package: 48-TFSOP (0.724", 18.40mm Width)

Stock5,840
TC58NVG1S3ETA00
Toshiba Semiconductor and Storage

IC EEPROM 2GBIT 25NS 48TSOP

Package: 48-TFSOP (0.724", 18.40mm Width)

Stock32,088
THGBMHG9C8LBAWG
Toshiba Semiconductor and Storage

IC FLASH 512GBIT 52MHZ 153WFBGA

Package: 153-WFBGA

Stock6,480

Part Number	Manufacturer	Description	Package	Stock	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
TC58CVG0S3HRAIG	Toshiba Semiconductor and Storage	1GB SERIAL NAND 24NM WSON8 3.3V Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 104MHz Write Cycle Time - Word, Page: - Access Time: 155µs Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x8)	Package: 8-WDFN Exposed Pad	Stock2,448	FLASH	FLASH - NAND	1Gb (128M x 8)	SPI - Quad I/O	104MHz	-	155µs	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
TH58NVG4S0HTAK0	Toshiba Semiconductor and Storage	16GB SLC NAND TSOP 24NM 4K PAGE Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM - NAND Memory Size: 16Gb (2G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	Package: 48-TFSOP (0.724", 18.40mm Width)	Stock4,112	EEPROM	EEPROM - NAND	16Gb (2G x 8)	Parallel	-	25ns	25ns	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
TH58NYG3S0HBAI6	Toshiba Semiconductor and Storage	IC EEPROM 8GBIT 25NS 67VFBGA Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM - NAND Memory Size: 8Gb (1G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 67-VFBGA Supplier Device Package: 67-VFBGA (6.5x8)	Package: 67-VFBGA	Stock7,536	EEPROM	EEPROM - NAND	8Gb (1G x 8)	Parallel	-	25ns	25ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	67-VFBGA	67-VFBGA (6.5x8)
THGBMHG8C2LBAIL	Toshiba Semiconductor and Storage	IC FLASH 256GBIT 52MHZ 153WFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: MMC Clock Frequency: 52MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-WFBGA Supplier Device Package: 153-WFBGA (11.5x13)	Package: 153-WFBGA	Stock6,944	FLASH	FLASH - NAND	256Gb (32G x 8)	MMC	52MHz	-	-	2.7 V ~ 3.6 V	-25°C ~ 85°C (TA)	Surface Mount	153-WFBGA	153-WFBGA (11.5x13)
THGBMHG7C1LBAIL	Toshiba Semiconductor and Storage	IC FLASH 128GBIT 52MHZ 153BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: MMC Clock Frequency: 52MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-WFBGA Supplier Device Package: 153-WFBGA (11.5x13)	Package: 153-WFBGA	Stock6,976	FLASH	FLASH - NAND	128Gb (16G x 8)	MMC	52MHz	-	-	2.7 V ~ 3.6 V	-25°C ~ 85°C (TA)	Surface Mount	153-WFBGA	153-WFBGA (11.5x13)
THGBMHG6C1LBAIL	Toshiba Semiconductor and Storage	IC FLASH 64GBIT 52MHZ 153WFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: MMC Clock Frequency: 52MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-WFBGA Supplier Device Package: 153-WFBGA (11.5x13)	Package: 153-WFBGA	Stock15,768	FLASH	FLASH - NAND	64Gb (8G x 8)	MMC	52MHz	-	-	2.7 V ~ 3.6 V	-25°C ~ 85°C (TA)	Surface Mount	153-WFBGA	153-WFBGA (11.5x13)
THGBMDG5D1LBAIT	Toshiba Semiconductor and Storage	IC FLASH 32GBIT 52MHZ 153WFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 32Gb (4G x 8) Memory Interface: MMC Clock Frequency: 52MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-WFBGA Supplier Device Package: 153-WFBGA (11x10)	Package: 153-WFBGA	Stock3,984	FLASH	FLASH - NAND	32Gb (4G x 8)	MMC	52MHz	-	-	2.7 V ~ 3.6 V	-25°C ~ 85°C (TA)	Surface Mount	153-WFBGA	153-WFBGA (11x10)
TH58NVG3S0HTAI0	Toshiba Semiconductor and Storage	IC EEPROM 8GBIT 25NS 48TSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM - NAND Memory Size: 8Gb (1G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	Package: 48-TFSOP (0.724", 18.40mm Width)	Stock4,160	EEPROM	EEPROM - NAND	8Gb (1G x 8)	Parallel	-	25ns	25ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
TH58NVG3S0HTA00	Toshiba Semiconductor and Storage	IC EEPROM 8GBIT 25NS 48TSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM - NAND Memory Size: 8Gb (1G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	Package: 48-TFSOP (0.724", 18.40mm Width)	Stock3,456	EEPROM	EEPROM - NAND	8Gb (1G x 8)	Parallel	-	25ns	25ns	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
TH58BVG3S0HTA00	Toshiba Semiconductor and Storage	IC EEPROM 4GBIT 25NS 48TSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM - NAND Memory Size: 8Gb (1G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	Package: 48-TFSOP (0.724", 18.40mm Width)	Stock3,680	EEPROM	EEPROM - NAND	8Gb (1G x 8)	Parallel	-	25ns	25ns	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
TC58NYG0S3HBAI6	Toshiba Semiconductor and Storage	IC EEPROM 1GBIT 25NS 67VFBGA Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM - NAND Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 67-VFBGA Supplier Device Package: 67-VFBGA (6.5x8)	Package: 67-VFBGA	Stock2,864	EEPROM	EEPROM - NAND	1Gb (128M x 8)	Parallel	-	25ns	25ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	67-VFBGA	67-VFBGA (6.5x8)
TC58NVG2S0HTAI0	Toshiba Semiconductor and Storage	IC EEPROM 4GBIT 25NS 48TSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	Package: 48-TFSOP (0.724", 18.40mm Width)	Stock6,408	EEPROM	EEPROM - NAND	4Gb (512M x 8)	Parallel	-	25ns	25ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
TC58NVG2S0HBAI4	Toshiba Semiconductor and Storage	IC EEPROM 4GBIT 25NS 63TFBGA Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-TFBGA (9x11)	Package: 63-VFBGA	Stock7,616	EEPROM	EEPROM - NAND	4Gb (512M x 8)	Parallel	-	25ns	25ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	63-VFBGA	63-TFBGA (9x11)
TC58NVG1S3HTA00	Toshiba Semiconductor and Storage	IC EEPROM 2GBIT 25NS 48TSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM - NAND Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	Package: 48-TFSOP (0.724", 18.40mm Width)	Stock63,360	EEPROM	EEPROM - NAND	2Gb (256M x 8)	Parallel	-	25ns	25ns	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
TC58NVG0S3HTAI0	Toshiba Semiconductor and Storage	IC EEPROM 1GBIT 25NS 48TSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM - NAND Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	Package: 48-TFSOP (0.724", 18.40mm Width)	Stock16,188	EEPROM	EEPROM - NAND	1Gb (128M x 8)	Parallel	-	25ns	25ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
TC58BVG1S3HBAI6	Toshiba Semiconductor and Storage	IC EEPROM 2GBIT 25NS 67VFBGA Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM - NAND Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 67-VFBGA Supplier Device Package: 67-VFBGA (6.5x8)	Package: 67-VFBGA	Stock7,808	EEPROM	EEPROM - NAND	2Gb (256M x 8)	Parallel	-	25ns	25ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	67-VFBGA	67-VFBGA (6.5x8)
TH58NVG4S0FTA20	Toshiba Semiconductor and Storage	IC EEPROM 16GBIT 25NS 48TSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM - NAND Memory Size: 16Gb (2G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	Package: 48-TFSOP (0.724", 18.40mm Width)	Stock4,832	EEPROM	EEPROM - NAND	16Gb (2G x 8)	Parallel	-	25ns	25ns	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
TC58NVG1S3ETAI0	Toshiba Semiconductor and Storage	IC EEPROM 2GBIT 25NS 48TSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	Package: 48-TFSOP (0.724", 18.40mm Width)	Stock5,840	EEPROM	EEPROM	2Gb (256M x 8)	Parallel	-	25ns	25ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
TC58NVG1S3ETA00	Toshiba Semiconductor and Storage	IC EEPROM 2GBIT 25NS 48TSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	Package: 48-TFSOP (0.724", 18.40mm Width)	Stock32,088	EEPROM	EEPROM	2Gb (256M x 8)	Parallel	-	25ns	25ns	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
THGBMHG9C8LBAWG	Toshiba Semiconductor and Storage	IC FLASH 512GBIT 52MHZ 153WFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Memory Interface: MMC Clock Frequency: 52MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-WFBGA Supplier Device Package: 153-WFBGA (11.5x13)	Package: 153-WFBGA	Stock6,480	FLASH	FLASH - NAND	512Gb (64G x 8)	MMC	52MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	153-WFBGA	153-WFBGA (11.5x13)
THGBMHG8C4LBAWR	Toshiba Semiconductor and Storage	IC FLASH 256GBIT 52MHZ 169VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: MMC Clock Frequency: 52MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-WFBGA Supplier Device Package: 153-WFBGA (11.5x13)	Package: 153-WFBGA	Stock2,384	FLASH	FLASH - NAND	256Gb (32G x 8)	MMC	52MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	153-WFBGA	153-WFBGA (11.5x13)
THGBMHG7C2LBAWR	Toshiba Semiconductor and Storage	IC FLASH 128GBIT 52MHZ 169BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: MMC Clock Frequency: 52MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-WFBGA Supplier Device Package: 153-WFBGA (11.5x13)	Package: 153-WFBGA	Stock5,040	FLASH	FLASH - NAND	128Gb (16G x 8)	MMC	52MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	153-WFBGA	153-WFBGA (11.5x13)
THGBMHG6C1LBAWL	Toshiba Semiconductor and Storage	IC FLASH 64GBIT 52MHZ 153WFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: MMC Clock Frequency: 52MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-WFBGA Supplier Device Package: 153-WFBGA (11.5x13)	Package: 153-WFBGA	Stock5,088	FLASH	FLASH - NAND	64Gb (8G x 8)	MMC	52MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	153-WFBGA	153-WFBGA (11.5x13)
TC58NYG2S0HBAI6	Toshiba Semiconductor and Storage	IC EEPROM 4GBIT 25NS 67FBGA Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 67-VFBGA Supplier Device Package: 67-VFBGA (6.5x8)	Package: 67-VFBGA	Stock6,064	EEPROM	EEPROM - NAND	4Gb (512M x 8)	Parallel	-	25ns	25ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	67-VFBGA	67-VFBGA (6.5x8)
TC58BVG1S3HTAI0	Toshiba Semiconductor and Storage	IC EEPROM 2GBIT 25NS 48TSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM - NAND Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	Package: 48-TFSOP (0.724", 18.40mm Width)	Stock4,864	EEPROM	EEPROM - NAND	2Gb (256M x 8)	Parallel	-	25ns	25ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
TC58NVG0S3HBAI6	Toshiba Semiconductor and Storage	IC EEPROM 1GBIT 25NS 67FBGA Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM - NAND Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 67-VFBGA Supplier Device Package: 67-VFBGA (6.5x8)	Package: 67-VFBGA	Stock6,304	EEPROM	EEPROM - NAND	1Gb (128M x 8)	Parallel	-	25ns	25ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	67-VFBGA	67-VFBGA (6.5x8)
THGBMHG9C4LBAIR	Toshiba Semiconductor and Storage	IC FLASH 512GBIT 52MHZ 153WFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Memory Interface: MMC Clock Frequency: 52MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-WFBGA Supplier Device Package: 153-WFBGA (11.5x13)	Package: 153-WFBGA	Stock7,152	FLASH	FLASH - NAND	512Gb (64G x 8)	MMC	52MHz	-	-	2.7 V ~ 3.6 V	-25°C ~ 85°C (TA)	Surface Mount	153-WFBGA	153-WFBGA (11.5x13)
TH58NVG4S0HTA20	Toshiba Semiconductor and Storage	16GB SLC NAND TSOP 24NM 4K PAGE Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM - NAND Memory Size: 16Gb (2G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	Package: 48-TFSOP (0.724", 18.40mm Width)	Stock6,624	EEPROM	EEPROM - NAND	16Gb (2G x 8)	Parallel	-	25ns	25ns	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I