Page 3 - Toshiba Semiconductor and Storage Products - Memory

TC58CVG2S0HQAIE
Toshiba Semiconductor and Storage

4GB SERIAL NAND 24NM SOP16 3.3V

Package: 16-SOIC (0.295", 7.50mm Width)

Stock7,248
TC58CVG0S3HQAIE
Toshiba Semiconductor and Storage

1GB SERIAL NAND 24NM SOP16 3.3V

Package: 16-SOIC (0.295", 7.50mm Width)

Stock5,712
TC58CVG2S0HRAIG
Toshiba Semiconductor and Storage

4GB SERIAL NAND 24NM WSON8 3.3V

Package: 8-WDFN Exposed Pad

Stock6,896

Part Number	Manufacturer	Description	Package	Stock	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
TC58CVG2S0HQAIE	Toshiba Semiconductor and Storage	4GB SERIAL NAND 24NM SOP16 3.3V Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 104MHz Write Cycle Time - Word, Page: - Access Time: 280µs Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOP	Package: 16-SOIC (0.295", 7.50mm Width)	Stock7,248	FLASH	FLASH - NAND	4Gb (512M x 8)	SPI - Quad I/O	104MHz	-	280µs	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOP
TC58CVG0S3HQAIE	Toshiba Semiconductor and Storage	1GB SERIAL NAND 24NM SOP16 3.3V Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 104MHz Write Cycle Time - Word, Page: - Access Time: 155µs Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOP	Package: 16-SOIC (0.295", 7.50mm Width)	Stock5,712	FLASH	FLASH - NAND	1Gb (128M x 8)	SPI - Quad I/O	104MHz	-	155µs	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOP
TC58CVG2S0HRAIG	Toshiba Semiconductor and Storage	4GB SERIAL NAND 24NM WSON8 3.3V Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 104MHz Write Cycle Time - Word, Page: - Access Time: 280µs Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x8)	Package: 8-WDFN Exposed Pad	Stock6,896	FLASH	FLASH - NAND	4Gb (512M x 8)	SPI - Quad I/O	104MHz	-	280µs	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)