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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 16A TO-220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 450V
- Current - Continuous Drain (Id) @ 25°C: 16A
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 270 mOhm @ 8A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock5,904 |
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Toshiba Semiconductor and Storage |
TRANS NPN 1A 230V TO220-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 230V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
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Package: TO-220-3 Full Pack |
Stock4,416 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.05W CST3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 50mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
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Package: SC-101, SOT-883 |
Stock5,232 |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 5V 30MA USC
- Diode Type: Schottky - Single
- Voltage - Peak Reverse (Max): 5V
- Current - Max: 30mA
- Capacitance @ Vr, F: 0.6pF @ 0.2V, 1MHz
- Resistance @ If, F: -
- Power Dissipation (Max): -
- Operating Temperature: 125°C (TJ)
- Package / Case: SC-76, SOD-323
- Supplier Device Package: USC
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Package: SC-76, SOD-323 |
Stock43,776 |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 10A L-FLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 0.55V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 40V
- Capacitance @ Vr, F: 420pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: L-FLAT?
- Supplier Device Package: L-FLAT? (4x5.5)
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: L-FLAT? |
Stock2,208 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 150MA LSTM
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 150mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -30°C ~ 85°C
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: LSTM
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Package: TO-226-3, TO-92-3 Long Body |
Stock5,440 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 100MA LSTM
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 100mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: LSTM
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Package: TO-226-3, TO-92-3 Long Body |
Stock5,232 |
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Toshiba Semiconductor and Storage |
IC CCD CLOCK DRIVER 18HSOP
- Applications: CCD Driver
- Current - Supply: -
- Voltage - Supply: 4.7 V ~ 5.5 V
- Operating Temperature: 0°C ~ 60°C
- Mounting Type: Surface Mount
- Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
- Supplier Device Package: 16-HSOP
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Package: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs |
Stock12,594 |
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Toshiba Semiconductor and Storage |
IC LED DRVR CONST CURR 24SSOP
- Type: Linear
- Topology: Shift Register
- Internal Switch(s): Yes
- Number of Outputs: 16
- Voltage - Supply (Min): 3V
- Voltage - Supply (Max): 5.5V
- Voltage - Output: 17V
- Current - Output / Channel: 90mA
- Frequency: -
- Dimming: -
- Applications: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-SOP (0.236", 6.00mm Width)
- Supplier Device Package: 24-SSOP
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Package: 24-SOP (0.236", 6.00mm Width) |
Stock5,520 |
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Toshiba Semiconductor and Storage |
IC DUAL BUS SWITCH MP8
- Type: Bus Switch
- Circuit: 2 x 1:1
- Independent Circuits: 1
- Current - Output High, Low: -
- Voltage Supply Source: Single Supply
- Voltage - Supply: 1.65 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 8-UFLGA
- Supplier Device Package: MP8
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Package: 8-UFLGA |
Stock7,472 |
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Toshiba Semiconductor and Storage |
IC GATE AND 4CH 2-INP 14-TSSOP
- Logic Type: AND Gate
- Number of Circuits: 4
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 2 V ~ 5.5 V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: 8mA, 8mA
- Logic Level - Low: 0.5V
- Logic Level - High: 1.5V
- Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-TSSOP
- Package / Case: 14-TSSOP (0.173", 4.40mm Width)
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Package: 14-TSSOP (0.173", 4.40mm Width) |
Stock2,688 |
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Toshiba Semiconductor and Storage |
IC GATE NOR 4CH 2-INP 14TSSOP
- Logic Type: NOR Gate
- Number of Circuits: 4
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 2 V ~ 5.5 V
- Current - Quiescent (Max): 4µA
- Current - Output High, Low: 24mA, 24mA
- Logic Level - Low: 0.5 V ~ 1.65 V
- Logic Level - High: 1.5 V ~ 3.85 V
- Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-TSSOP
- Package / Case: 14-TSSOP (0.173", 4.40mm Width)
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Package: 14-TSSOP (0.173", 4.40mm Width) |
Stock23,844 |
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Toshiba Semiconductor and Storage |
IC GATE NOR 4CH 2-INP 14TSSOP
- Logic Type: NOR Gate
- Number of Circuits: 4
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 1.65 V ~ 3.6 V
- Current - Quiescent (Max): 10µA
- Current - Output High, Low: 24mA, 24mA
- Logic Level - Low: 0.7 V ~ 0.8 V
- Logic Level - High: 1.7 V ~ 2 V
- Max Propagation Delay @ V, Max CL: 6ns @ 3.3V, 50pF
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-TSSOPB
- Package / Case: 14-TSSOP (0.173", 4.40mm Width)
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Package: 14-TSSOP (0.173", 4.40mm Width) |
Stock45,744 |
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Toshiba Semiconductor and Storage |
TVS DIODE 1VWM ESV PAC
- Type: Zener
- Unidirectional Channels: 4
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 1V
- Voltage - Breakdown (Min): 3.4V
- Voltage - Clamping (Max) @ Ipp: -
- Current - Peak Pulse (10/1000µs): -
- Power - Peak Pulse: -
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 110pF @ 1MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
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Package: SOT-553 |
Stock27,642 |
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Toshiba Semiconductor and Storage |
TVS DIODE 3.5VWM
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 3.5V (Max)
- Voltage - Breakdown (Min): 5.3V
- Voltage - Clamping (Max) @ Ipp: -
- Current - Peak Pulse (10/1000µs): -
- Power - Peak Pulse: -
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 40pF @ 1MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SOD-923
- Supplier Device Package: SOD-923
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Package: SOD-923 |
Stock94,614 |
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Toshiba Semiconductor and Storage |
OPTOISOLATOR 3.75KV TRANS SO16
- Number of Channels: 4
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 100% @ 5mA
- Current Transfer Ratio (Max): 600% @ 5mA
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): 2µs, 3µs
- Input Type: AC, DC
- Output Type: Transistor
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.25V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 300mV
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.179", 4.55mm Width)
- Supplier Device Package: 16-SO
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Package: 16-SOIC (0.179", 4.55mm Width) |
Stock7,812 |
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Toshiba Semiconductor and Storage |
OPTOISO 3.75KV TRANS 6-SO 4 LEAD
- Number of Channels: 1
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 50% @ 5mA
- Current Transfer Ratio (Max): 400% @ 5mA
- Turn On / Turn Off Time (Typ): 9µs, 9µs
- Rise / Fall Time (Typ): 5µs, 9µs
- Input Type: AC, DC
- Output Type: Transistor
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.25V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 300mV
- Operating Temperature: -55°C ~ 110°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD (4 Leads), Gull Wing
- Supplier Device Package: 6-SO, 4 Lead
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Package: 6-SMD (4 Leads), Gull Wing |
Stock8,694 |
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Toshiba Semiconductor and Storage |
IC INVERTER 6CH 6-INP 14SOIC
- Logic Type: Inverter
- Number of Circuits: 6
- Number of Inputs: 6
- Features: -
- Voltage - Supply: 2 V ~ 6 V
- Current - Quiescent (Max): 1µA
- Current - Output High, Low: 5.2mA, 5.2mA
- Logic Level - Low: 0.3 V ~ 1.2 V
- Logic Level - High: 1.7 V ~ 4.8 V
- Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-SOIC
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
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Package: 14-SOIC (0.154", 3.90mm Width) |
Stock6,208 |
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Toshiba Semiconductor and Storage |
TXZ FAMILY MCU
- Core Processor: ARM® Cortex®-M4F
- Core Size: 32-Bit
- Speed: 160MHz
- Connectivity: CEC, EBI/EMI, I²C, IrDA, SIO, SPI, SMIF, UART/USART
- Peripherals: DMA, LVD, POR, WDT
- Number of I/O: 122
- Program Memory Size: 512KB (512K x 8)
- Program Memory Type: FLASH
- EEPROM Size: 32K x 8
- RAM Size: 128K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
- Data Converters: A/D 24x12b; D/A 2x8b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-LQFP (14x14)
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Package: 100-LQFP |
Stock6,688 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 50V SMINI
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 2.2 kOhms
- Resistor - Emitter Base (R2) (Ohms): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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Package: - |
Stock2,580 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 50V 0.1A SSM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 22 kOhms
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
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Package: - |
Stock9,000 |
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Toshiba Semiconductor and Storage |
40V 150MA LDO LOW IQ 1UA SOT-25
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 36V
- Voltage - Output (Min/Fixed): 5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.66V @ 150mA
- Current - Output: 150mA
- Current - Quiescent (Iq): 1.6 µA
- Current - Supply (Max): -
- PSRR: 60dB (1kHz)
- Control Features: Current Limit, Enable
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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Package: - |
Stock7,755 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 50V 0.1A VESM
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 1 kOhms
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: -
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
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Package: - |
Stock231 |
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Toshiba Semiconductor and Storage |
STEPPING MOTOR CONTROL DRIVER IC
- Motor Type - Stepper: Bipolar
- Motor Type - AC, DC: -
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (4)
- Interface: Logic
- Technology: DMOS
- Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
- Applications: General Purpose
- Current - Output: 1.8A
- Voltage - Supply: 4.5V ~ 33V
- Voltage - Load: 4.5V ~ 33V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 32-VFQFN Exposed Pad
- Supplier Device Package: 32-VQFN (5x5)
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Package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 30V 0.1A US6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Rds On (Max) @ Id, Vgs: 3.2Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 15.1pF @ 3V
- Power - Max: 300mW
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Package: - |
Stock8,250 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 1.9A ES6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V
- Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: ES6
- Package / Case: SOT-563, SOT-666
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Package: - |
Stock11,940 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 6A 6UDFNB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFNB (2x2)
- Package / Case: 6-WDFN Exposed Pad
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Package: - |
Stock18,414 |
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Toshiba Semiconductor and Storage |
16 CHANNEL CONSTANT CURRENT LED
- Type: Linear
- Topology: Shift Register
- Internal Switch(s): Yes
- Number of Outputs: 16
- Voltage - Supply (Min): 3V
- Voltage - Supply (Max): 5.5V
- Voltage - Output: 17V
- Current - Output / Channel: 90mA
- Frequency: -
- Dimming: -
- Applications: LED Lighting
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-SOP (0.236", 6.00mm Width)
- Supplier Device Package: 24-SSOP
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Package: - |
Stock5,370 |
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