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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 35A SOP-8 ADV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
- Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 18A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock3,664 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 8A TO-220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 450V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 900 mOhm @ 4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock5,296 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 25A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 300V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Rds On (Max) @ Id, Vgs: 140 mOhm @ 7.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock4,528 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 15.8A I2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.7V @ 790µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 300V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.9A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock7,328 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5.2A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 170µA
- Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 300V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 1.22 Ohm @ 2.6A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Stub Leads, IPak
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Package: TO-251-3 Stub Leads, IPak |
Stock6,324 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 25A TO-220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 300V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 140 mOhm @ 7.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock6,672 |
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Toshiba Semiconductor and Storage |
TRANS NPN 3A 50V TO220-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
- Power - Max: 2W
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
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Package: TO-220-3 Full Pack |
Stock5,184 |
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Toshiba Semiconductor and Storage |
TRANS NPN/PNP PREBIAS 0.2W US6
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock6,992 |
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Toshiba Semiconductor and Storage |
TRANS NPN/PNP PREBIAS 0.3W SM6
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SM6
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Package: SC-74, SOT-457 |
Stock4,112 |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 5A L-FLAT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 0.98V @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: L-FLAT?
- Supplier Device Package: L-FLAT? (4x5.5)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: L-FLAT? |
Stock2,384 |
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Toshiba Semiconductor and Storage |
IC BUS SWITCH LOCAP QUAD 20TSSOP
- Type: Bus Switch
- Circuit: 8 x 1:1
- Independent Circuits: 1
- Current - Output High, Low: -
- Voltage Supply Source: Dual Supply
- Voltage - Supply: 1.65 V ~ 5 V, 2.3 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 20-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 20-TSSOP
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Package: 20-TSSOP (0.173", 4.40mm Width) |
Stock4,080 |
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Toshiba Semiconductor and Storage |
IC GATE XOR 4CH 2-INP 14TSSOP
- Logic Type: XOR (Exclusive OR)
- Number of Circuits: 4
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 2 V ~ 5.5 V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: 8mA, 8mA
- Logic Level - Low: 0.5V
- Logic Level - High: 1.5V
- Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-TSSOP
- Package / Case: 14-TSSOP (0.173", 4.40mm Width)
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Package: 14-TSSOP (0.173", 4.40mm Width) |
Stock18,012 |
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Toshiba Semiconductor and Storage |
IC INVERTER 8-SSOP
- Logic Type: Inverter
- Number of Circuits: 3
- Number of Inputs: 3
- Features: -
- Voltage - Supply: 2 V ~ 5.5 V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: 8mA, 8mA
- Logic Level - Low: 0.5V
- Logic Level - High: 1.5V
- Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: US8
- Package / Case: 8-VFSOP (0.091", 2.30mm Width)
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Package: 8-VFSOP (0.091", 2.30mm Width) |
Stock29,172 |
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Toshiba Semiconductor and Storage |
TVS DIODE 5.5VWM 15VC SL2-2
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 5.5V (Max)
- Voltage - Breakdown (Min): 5.6V
- Voltage - Clamping (Max) @ Ipp: 15V
- Current - Peak Pulse (10/1000µs): 2A
- Power - Peak Pulse: 30W
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 0.35pF @ 1MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 0201 (0603 Metric)
- Supplier Device Package: SL2
|
Package: 0201 (0603 Metric) |
Stock3,906 |
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Toshiba Semiconductor and Storage |
IC PHOTORELAY MOSFET 6-SOP
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 50 mOhm
- Load Current: 2.5A
- Voltage - Input: 1.33VDC
- Voltage - Load: 0 ~ 20 V
- Mounting Type: Surface Mount
- Termination Style: Gull Wing
- Package / Case: 6-SOP (0.173", 4.40mm)
- Supplier Device Package: 6-SOP (2.54mm)
- Relay Type: Relay
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Package: 6-SOP (0.173", 4.40mm) |
Stock3,726 |
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Toshiba Semiconductor and Storage |
IC PHOTORELAY MOSFET 4-SOP
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 8 Ohm
- Load Current: 200mA
- Voltage - Input: 1.15VDC
- Voltage - Load: 0 ~ 200 V
- Mounting Type: Surface Mount
- Termination Style: Gull Wing
- Package / Case: 4-SOP (0.173", 4.40mm)
- Supplier Device Package: 4-SOP (2.54mm)
- Relay Type: Relay
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Package: 4-SOP (0.173", 4.40mm) |
Stock15,342 |
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Toshiba Semiconductor and Storage |
OPTOISOLATOR 2.5KV TRIAC 6MFSOP
- Output Type: Triac
- Zero Crossing Circuit: Yes
- Number of Channels: 1
- Voltage - Isolation: 2500Vrms
- Voltage - Off State: 600V
- Static dV/dt (Min): 200V/µs
- Current - LED Trigger (Ift) (Max): 3mA
- Current - On State (It (RMS)) (Max): 70mA
- Current - Hold (Ih): 600µA (Typ)
- Turn On Time: -
- Voltage - Forward (Vf) (Typ): 1.4V
- Current - DC Forward (If) (Max): 20mA
- Operating Temperature: -40°C ~ 100°C
- Mounting Type: Surface Mount
- Package / Case: 6-SOIC (0.173", 4.40mm Width) 4 Leads
- Supplier Device Package: 6-MFSOP, 4 Lead
- Approvals: UR
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Package: 6-SOIC (0.173", 4.40mm Width) 4 Leads |
Stock2,160 |
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Toshiba Semiconductor and Storage |
OPTOISOLATOR 5KV TRIAC 6DIP 5L
- Output Type: Triac
- Zero Crossing Circuit: No
- Number of Channels: 1
- Voltage - Isolation: 5000Vrms
- Voltage - Off State: 400V
- Static dV/dt (Min): 200V/µs
- Current - LED Trigger (Ift) (Max): 5mA
- Current - On State (It (RMS)) (Max): 100mA
- Current - Hold (Ih): 600µA (Typ)
- Turn On Time: -
- Voltage - Forward (Vf) (Typ): 1.15V
- Current - DC Forward (If) (Max): 50mA
- Operating Temperature: -40°C ~ 100°C
- Mounting Type: Through Hole
- Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
- Supplier Device Package: 6-DIP (Cut), 5 Lead
- Approvals: BSI, SEMKO, UR
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Package: 6-DIP (0.300", 7.62mm), 5 Leads |
Stock228,462 |
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Toshiba Semiconductor and Storage |
OPTOISO 3.75KV TRANS 6-SO 4 LEAD
- Number of Channels: 1
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 100% @ 5mA
- Current Transfer Ratio (Max): 300% @ 5mA
- Turn On / Turn Off Time (Typ): 9µs, 9µs
- Rise / Fall Time (Typ): 5µs, 9µs
- Input Type: DC
- Output Type: Transistor
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.25V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 300mV
- Operating Temperature: -55°C ~ 110°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD (4 Leads), Gull Wing
- Supplier Device Package: 6-SO, 4 Lead
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Package: 6-SMD (4 Leads), Gull Wing |
Stock5,724 |
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Toshiba Semiconductor and Storage |
IC INVERTER 6CH 6-INP 14SOIC
- Logic Type: Inverter
- Number of Circuits: 6
- Number of Inputs: 6
- Features: Open Drain
- Voltage - Supply: 2 V ~ 6 V
- Current - Quiescent (Max): 1µA
- Current - Output High, Low: -, 5.2mA
- Logic Level - Low: 0.5 V ~ 1.8 V
- Logic Level - High: 1.5 V ~ 4.2 V
- Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-SOIC
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
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Package: 14-SOIC (0.154", 3.90mm Width) |
Stock5,472 |
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Toshiba Semiconductor and Storage |
X34 PB-F SCHMITT NAND GATE VCC:
- Logic Type: NAND Gate
- Number of Circuits: 4
- Number of Inputs: 2
- Features: Schmitt Trigger
- Voltage - Supply: 2V ~ 5.5V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: 8mA, 8mA
- Logic Level - Low: 0.1V ~ 36V
- Logic Level - High: 2V ~ 4.5V
- Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-TSSOPB
- Package / Case: 14-TSSOP (0.173", 4.40mm Width)
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Package: 14-TSSOP (0.173", 4.40mm Width) |
Stock21,060 |
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Toshiba Semiconductor and Storage |
LDO REG VOUT=0.85V I=200MA
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 0.85V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 1.56V @ 150mA
- Current - Output: 200mA
- Current - Quiescent (Iq): 2 µA
- Current - Supply (Max): -
- PSRR: -
- Control Features: Enable
- Protection Features: Over Current
- Operating Temperature: -40°C ~ 85°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-XFDFN Exposed Pad
- Supplier Device Package: 4-SDFN (0.8x0.8)
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Package: - |
Stock29,895 |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 2A S-FLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 30 V
- Capacitance @ Vr, F: 82pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: S-FLAT (1.6x3.5)
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock9,000 |
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Toshiba Semiconductor and Storage |
IC INVERT SCHMITT 1CH 1-INP USV
- Logic Type: Inverter
- Number of Circuits: 1
- Number of Inputs: 1
- Features: Schmitt Trigger
- Voltage - Supply: 0.9V ~ 3.6V
- Current - Quiescent (Max): 1 µA
- Current - Output High, Low: 8mA, 8mA
- Logic Level - Low: 0.18V ~ 0.96V
- Logic Level - High: 0.73V ~ 2.14V
- Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Supplier Device Package: USV
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
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Package: - |
Stock34,578 |
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Toshiba Semiconductor and Storage |
LDO REG VOUT=0.8V I=200MA
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 0.8V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 1.56V @ 150mA
- Current - Output: 200mA
- Current - Quiescent (Iq): 2 µA
- Current - Supply (Max): -
- PSRR: -
- Control Features: Enable
- Protection Features: Over Current
- Operating Temperature: -40°C ~ 85°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-XFDFN Exposed Pad
- Supplier Device Package: 4-SDFN (0.8x0.8)
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Package: - |
Stock30,000 |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 3A M-FLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300 µA @ 60 V
- Capacitance @ Vr, F: 102pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: M-FLAT (2.4x3.8)
- Operating Temperature - Junction: -40°C ~ 150°C
|
Package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
DIODE ARRAY GP 80V 100MA USV
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io) (per Diode): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 1.6 ns
- Current - Reverse Leakage @ Vr: 500 nA @ 80 V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: USV
|
Package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 80A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7770 pF @ 10 V
- Vgs (Max): +10V, -20V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 40A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
|
Package: - |
Stock16,722 |
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