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Toshiba Semiconductor and Storage |
IGBT 400V 600MW 8TSSOP
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 400V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 150A
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 150A
- Power - Max: 600mW
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 1.7µs/2µs
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock2,100 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-92MOD
- Package / Case: TO-226-3, TO-92-3 Long Body
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Package: TO-226-3, TO-92-3 Long Body |
Stock4,368 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 4A TSM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 53 mOhm @ 3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSM
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,376 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 7A TO-220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 550V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock2,240 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 15A DPAK-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 29W (Tc)
- Rds On (Max) @ Id, Vgs: 36 mOhm @ 7.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,784 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 60A 8-SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 64W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 30A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock22,200 |
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Toshiba Semiconductor and Storage |
MOSFET NCH 30V 15A UDFNB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 4A, 10V
- Operating Temperature: 150°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFNB (2x2)
- Package / Case: 6-WDFN Exposed Pad
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Package: 6-WDFN Exposed Pad |
Stock93,756 |
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Toshiba Semiconductor and Storage |
DIODE STANDARD 10V FSC
- Diode Type: Standard - Single
- Voltage - Peak Reverse (Max): 10V
- Current - Max: -
- Capacitance @ Vr, F: 3.4pF @ 2.5V, 1MHz
- Resistance @ If, F: -
- Power Dissipation (Max): -
- Operating Temperature: 150°C (TJ)
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: fSC
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Package: 2-SMD, Flat Lead |
Stock5,664 |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 10A L-FLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 60V
- Capacitance @ Vr, F: 345pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: L-FLAT?
- Supplier Device Package: L-FLAT? (4x5.5)
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: L-FLAT? |
Stock3,616 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 3.3V 300MA SMV
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 3.3V
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 300mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 65µA ~ 78µA
- PSRR: 70dB (1kHz)
- Control Features: Enable
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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Package: SC-74A, SOT-753 |
Stock2,196,000 |
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Toshiba Semiconductor and Storage |
IC MOTOR DRIVER PAR 36HSOP
- Motor Type - Stepper: Bipolar
- Motor Type - AC, DC: -
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (4)
- Interface: Parallel
- Technology: DMOS
- Step Resolution: 1, 1/2, 1/4, 1/8, 1/16
- Applications: General Purpose
- Current - Output: 1.5A
- Voltage - Supply: 4.5 V ~ 5.5 V
- Voltage - Load: 13 V ~ 34 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 36-BSSOP (0.346", 8.80mm) + 2 Heat Tabs
- Supplier Device Package: 36-HSOP
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Package: 36-BSSOP (0.346", 8.80mm) + 2 Heat Tabs |
Stock5,872 |
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Toshiba Semiconductor and Storage |
IC MOTOR DRIVER PAR 16HSOP
- Motor Type - Stepper: -
- Motor Type - AC, DC: Brushed DC
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (2)
- Interface: Parallel, PWM
- Technology: Bi-CMOS
- Step Resolution: -
- Applications: General Purpose
- Current - Output: 1.5A
- Voltage - Supply: 10 V ~ 45 V
- Voltage - Load: 10 V ~ 45 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
- Supplier Device Package: 16-HSOP
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Package: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs |
Stock4,752 |
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Toshiba Semiconductor and Storage |
IC EEPROM 4GBIT 25NS 63TFBGA
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM - NAND
- Memory Size: 4Gb (512M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 63-VFBGA
- Supplier Device Package: 63-TFBGA (9x11)
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Package: 63-VFBGA |
Stock7,616 |
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Toshiba Semiconductor and Storage |
IC GATE XOR 4CH 2-INP 14-TSSOP
- Logic Type: XOR (Exclusive OR)
- Number of Circuits: 4
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 2 V ~ 5.5 V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: 8mA, 8mA
- Logic Level - Low: 0.5V
- Logic Level - High: 1.5V
- Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-TSSOP
- Package / Case: 14-TSSOP (0.173", 4.40mm Width)
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Package: 14-TSSOP (0.173", 4.40mm Width) |
Stock3,232 |
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Toshiba Semiconductor and Storage |
IC GATE NAND 4CH 2-INP 14-SOL
- Logic Type: NAND Gate
- Number of Circuits: 4
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 2 V ~ 3.6 V
- Current - Quiescent (Max): 10µA
- Current - Output High, Low: 24mA, 24mA
- Logic Level - Low: 0.8V
- Logic Level - High: 2V
- Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-SOL
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
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Package: 14-SOIC (0.154", 3.90mm Width) |
Stock5,280 |
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Toshiba Semiconductor and Storage |
IC INVERTER HEX SCHMITT 14VSSOP
- Logic Type: Inverter
- Number of Circuits: 6
- Number of Inputs: 6
- Features: Schmitt Trigger
- Voltage - Supply: 1.65 V ~ 3.6 V
- Current - Quiescent (Max): 10µA
- Current - Output High, Low: 24mA, 24mA
- Logic Level - Low: 0.3 V ~ 0.6 V
- Logic Level - High: 1.35 V ~ 2.2 V
- Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-VSSOP, US14
- Package / Case: 14-VFSOP (0.118", 3.00mm Width)
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Package: 14-VFSOP (0.118", 3.00mm Width) |
Stock23,340 |
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Toshiba Semiconductor and Storage |
IC INVERTER TRPL 74HCU04 8-SSOP
- Logic Type: Inverter
- Number of Circuits: 3
- Number of Inputs: 3
- Features: -
- Voltage - Supply: 2 V ~ 6 V
- Current - Quiescent (Max): 1µA
- Current - Output High, Low: 5.2mA, 5.2mA
- Logic Level - Low: 0.3 V ~ 1.2 V
- Logic Level - High: 1.7 V ~ 4.8 V
- Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: US8
- Package / Case: 8-VFSOP (0.091", 2.30mm Width)
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Package: 8-VFSOP (0.091", 2.30mm Width) |
Stock50,496 |
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Toshiba Semiconductor and Storage |
IC INVERTER SCHMITT 5-SSOP
- Logic Type: Inverter
- Number of Circuits: 1
- Number of Inputs: 1
- Features: Schmitt Trigger
- Voltage - Supply: 2 V ~ 6 V
- Current - Quiescent (Max): 1µA
- Current - Output High, Low: 2.6mA, 2.6mA
- Logic Level - Low: 0.3 V ~ 1.5 V
- Logic Level - High: 1.5 V ~ 4.2 V
- Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: SMV
- Package / Case: SC-74A, SOT-753
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Package: SC-74A, SOT-753 |
Stock84,786 |
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Toshiba Semiconductor and Storage |
IC D-TYPE POS TRG SNGL 8SSOP
- Function: Set(Preset) and Reset
- Type: D-Type
- Output Type: Differential
- Number of Elements: 1
- Number of Bits per Element: 1
- Clock Frequency: 67MHz
- Max Propagation Delay @ V, Max CL: 26ns @ 6V, 50pF
- Trigger Type: Positive Edge
- Current - Output High, Low: 5.2mA, 5.2mA
- Voltage - Supply: 2 V ~ 6 V
- Current - Quiescent (Iq): 2µA
- Input Capacitance: 5pF
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
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Package: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) |
Stock310,512 |
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Toshiba Semiconductor and Storage |
TVS DIODE 5.5VWM 20VC 5DFN
- Type: Steering (Rail to Rail)
- Unidirectional Channels: 4
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 5.5V (Max)
- Voltage - Breakdown (Min): 6V
- Voltage - Clamping (Max) @ Ipp: 20V
- Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
- Power - Peak Pulse: 50W
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 0.2pF @ 1MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 5-XFDFN
- Supplier Device Package: 5-DFN (1.3x0.8)
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Package: 5-XFDFN |
Stock43,632 |
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Toshiba Semiconductor and Storage |
TVS DIODE 1VWM USM
- Type: Zener
- Unidirectional Channels: 2
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 1V
- Voltage - Breakdown (Min): 3.4V
- Voltage - Clamping (Max) @ Ipp: -
- Current - Peak Pulse (10/1000µs): -
- Power - Peak Pulse: -
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 110pF @ 1MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
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Package: SC-70, SOT-323 |
Stock45,114 |
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Toshiba Semiconductor and Storage |
PHOTORELAY 40V 250MA 4SSOP
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 3 Ohm
- Load Current: 250mA
- Voltage - Input: 1.15VDC
- Voltage - Load: 0 ~ 40 V
- Mounting Type: Surface Mount
- Termination Style: SMD (SMT) Tab
- Package / Case: 4-SMD (0.165", 4.20mm)
- Supplier Device Package: 4-SSOP
- Relay Type: Relay
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Package: 4-SMD (0.165", 4.20mm) |
Stock18,000 |
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Toshiba Semiconductor and Storage |
OPTOISO 3.75KV TRANS 6-SO 5 LEAD
- Number of Channels: 1
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 500% @ 5mA
- Current Transfer Ratio (Max): -
- Turn On / Turn Off Time (Typ): -
- Rise / Fall Time (Typ): -
- Input Type: DC
- Output Type: Transistor
- Voltage - Output (Max): 18V
- Current - Output / Channel: 80mA
- Voltage - Forward (Vf) (Typ): -
- Current - DC Forward (If) (Max): 20mA
- Vce Saturation (Max): -
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
- Supplier Device Package: 6-SO, 5 Lead
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Package: 6-SOIC (0.179", 4.55mm Width) 5 Leads |
Stock4,968 |
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Toshiba Semiconductor and Storage |
HIGH SPEED LOGIC OUTPUT OPTOCOUP
- Number of Channels: 1
- Inputs - Side 1/Side 2: 1/0
- Voltage - Isolation: 3750Vrms
- Common Mode Transient Immunity (Min): 25kV/µs
- Input Type: DC
- Output Type: Push-Pull, Totem Pole
- Current - Output / Channel: 10mA
- Data Rate: 5Mbps
- Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
- Rise / Fall Time (Typ): 11ns, 13ns
- Voltage - Forward (Vf) (Typ): 1.53V
- Current - DC Forward (If) (Max): 8mA
- Voltage - Supply: 2.7 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock7,614 |
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Toshiba Semiconductor and Storage |
LOAD SWITCH (GATE DRIVER) IC WCS
- Driven Configuration: High-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 2.7V ~ 28V
- Logic Voltage - VIL, VIH: 0.4V, 1.2V
- Current - Peak Output (Source, Sink): -
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 6-XFBGA, WLCSP
- Supplier Device Package: 6-WCSPG (0.8x1.2)
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Package: - |
Stock25,683 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 50V 0.1A SC70
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 10 kOhms
- Resistor - Emitter Base (R2) (Ohms): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
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Package: - |
Stock18,000 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 500MA UFM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V
- Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: UFM
- Package / Case: 3-SMD, Flat Leads
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Package: - |
Stock15,840 |
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Toshiba Semiconductor and Storage |
AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47kOhms
- Resistor - Emitter Base (R2) (Ohms): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz, 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
|
Package: - |
Stock24,000 |
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