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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4.6A UFM
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 46 mOhm @ 3A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: UFM
- Package / Case: 3-SMD, Flat Leads
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Package: 3-SMD, Flat Leads |
Stock144,000 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 18A SOP8 2-6J1B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2265pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 9A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP (5.5x6.0)
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
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Package: 8-SOIC (0.173", 4.40mm Width) |
Stock7,216 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 80A DPAK-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7770pF @ 10V
- Vgs (Max): +10V, -20V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 40A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,864 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 17.3A T0247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 900µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 300V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 165W (Tc)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 8.7A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock7,416 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 100A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 255W (Tc)
- Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 50A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock7,120 |
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Toshiba Semiconductor and Storage |
TRANS PNP 2A 50V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Package: TO-226-3, TO-92-3 Long Body |
Stock3,104 |
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Toshiba Semiconductor and Storage |
TRANS NPN 200V 0.05A S-MINI
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 200V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 3V
- Power - Max: 150mW
- Frequency - Transition: 100MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,112 |
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Toshiba Semiconductor and Storage |
TRANS NPN/PNP PREBIAS 0.1W ES6
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz, 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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Package: SOT-563, SOT-666 |
Stock4,160 |
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Toshiba Semiconductor and Storage |
IC PWR SWITCH P-CHAN 1:1 WCSP6E
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: P-Channel
- Interface: On/Off
- Voltage - Load: 1.1 V ~ 5.5 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 2A
- Rds On (Typ): 25 mOhm
- Input Type: Non-Inverting
- Features: Slew Rate Controlled
- Fault Protection: Reverse Current
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 6-UFBGA, WLCSP
- Supplier Device Package: 6-WCSPE (0.80x1.2)
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Package: 6-UFBGA, WLCSP |
Stock41,076 |
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Toshiba Semiconductor and Storage |
IC MOTOR DRIVER PAR 16DIP
- Motor Type - Stepper: -
- Motor Type - AC, DC: Brushed DC
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (2)
- Interface: PWM, Serial
- Technology: Bi-CMOS
- Step Resolution: -
- Applications: General Purpose
- Current - Output: 3.5A
- Voltage - Supply: 10 V ~ 27 V
- Voltage - Load: 10 V ~ 27 V
- Operating Temperature: -20°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 16-DIP (0.300", 7.62mm)
- Supplier Device Package: 16-DIP
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Package: 16-DIP (0.300", 7.62mm) |
Stock65,016 |
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Toshiba Semiconductor and Storage |
BUS TRANCEIVER 8WCSP
- Translator Type: Voltage Level
- Channel Type: Bidirectional
- Number of Circuits: 1
- Channels per Circuit: 2
- Voltage - VCCA: 1.2V ~ 3.6V
- Voltage - VCCB: 1.2V ~ 3.6V
- Input Signal: -
- Output Signal: -
- Output Type: -
- Data Rate: 200Mbps
- Operating Temperature: -40°C ~ 85°C (TA)
- Features: Auto-Direction Sensing
- Mounting Type: Surface Mount
- Package / Case: 8-UFBGA, WLCSP
- Supplier Device Package: 8-WCSP (0.80x1.6)
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Package: 8-UFBGA, WLCSP |
Stock3,264 |
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Toshiba Semiconductor and Storage |
IC BUS SWITCH SPST DUAL US8
- Type: Bus Switch
- Circuit: 2 x 1:1
- Independent Circuits: 1
- Current - Output High, Low: -
- Voltage Supply Source: Dual Supply
- Voltage - Supply: 1.65 V ~ 5 V, 2.3 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 8-VFSOP (0.091", 2.30mm Width)
- Supplier Device Package: US8
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Package: 8-VFSOP (0.091", 2.30mm Width) |
Stock23,454 |
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Toshiba Semiconductor and Storage |
IC BUS TRANSCVR 8BIT 20SOP
- Logic Type: Transceiver, Non-Inverting
- Number of Elements: 1
- Number of Bits per Element: 8
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 8mA, 8mA
- Voltage - Supply: 2 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 20-SOP
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Package: 20-SOIC (0.295", 7.50mm Width) |
Stock16,116 |
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Toshiba Semiconductor and Storage |
IC DRIVER DARL SINK 7-CH 16-SOP
- Type: Driver
- Protocol: -
- Number of Drivers/Receivers: 7/0
- Duplex: -
- Receiver Hysteresis: -
- Data Rate: -
- Voltage - Supply: 0 V ~ 50 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.173", 4.40mm Width)
- Supplier Device Package: 16-SOP
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Package: 16-SOIC (0.173", 4.40mm Width) |
Stock6,288 |
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Toshiba Semiconductor and Storage |
LED LETERAS WARM WHT 2700K 2SMD
- Color: White, Warm
- CCT (K): 2700K
- Flux @ 85°C, Current - Test: -
- Flux @ 25°C, Current - Test: 21 lm (19 lm ~ 22 lm)
- Current - Test: 65mA
- Voltage - Forward (Vf) (Typ): 2.82V
- Lumens/Watt @ Current - Test: 115 lm/W
- CRI (Color Rendering Index): 80
- Current - Max: 100mA
- Viewing Angle: -
- Mounting Type: Surface Mount
- Package / Case: 1206 (3014 Metric)
- Supplier Device Package: 3014
- Size / Dimension: 0.118" L x 0.055" W (3.00mm x 1.40mm)
- Height - Seated (Max): 0.030" (0.77mm)
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Package: 1206 (3014 Metric) |
Stock6,804 |
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Toshiba Semiconductor and Storage |
PHOTORELAY MOSFET 400V 6SOP
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 35 Ohm
- Load Current: 120mA
- Voltage - Input: 1.15VDC
- Voltage - Load: 0 ~ 400 V
- Mounting Type: Surface Mount
- Termination Style: Gull Wing
- Package / Case: 6-SOP (0.173", 4.40mm)
- Supplier Device Package: 6-SOP (2.54mm)
- Relay Type: Relay
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Package: 6-SOP (0.173", 4.40mm) |
Stock5,706 |
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Toshiba Semiconductor and Storage |
OPTOISO 3.75KV TRANS 6-SO 4 LEAD
- Number of Channels: 1
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 75% @ 5mA
- Current Transfer Ratio (Max): 150% @ 5mA
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): 2µs, 3µs
- Input Type: DC
- Output Type: Transistor
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.25V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 300mV
- Operating Temperature: -55°C ~ 110°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD (4 Leads), Gull Wing
- Supplier Device Package: 6-SO, 4 Lead
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Package: 6-SMD (4 Leads), Gull Wing |
Stock6,444 |
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Toshiba Semiconductor and Storage |
OPTOISOLATOR 3.75KV TRANS 4-SO
- Number of Channels: 1
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 200% @ 5mA
- Current Transfer Ratio (Max): 600% @ 5mA
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): 2µs, 3µs
- Input Type: DC
- Output Type: Transistor
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.25V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 300mV
- Operating Temperature: -55°C ~ 110°C
- Mounting Type: Surface Mount
- Package / Case: 4-SOIC (0.179", 4.55mm)
- Supplier Device Package: 4-SO
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Package: 4-SOIC (0.179", 4.55mm) |
Stock199,410 |
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Toshiba Semiconductor and Storage |
OPTOISO 5KV PUSH PULL SO6L
- Number of Channels: 1
- Inputs - Side 1/Side 2: 1/0
- Voltage - Isolation: 5000Vrms
- Common Mode Transient Immunity (Min): 30kV/µs
- Input Type: DC
- Output Type: Push-Pull, Totem Pole
- Current - Output / Channel: 50mA
- Data Rate: -
- Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
- Rise / Fall Time (Typ): 3ns, 3ns
- Voltage - Forward (Vf) (Typ): 1.55V
- Current - DC Forward (If) (Max): 15mA
- Voltage - Supply: 4.5 V ~ 30 V
- Operating Temperature: -40°C ~ 110°C
- Mounting Type: Surface Mount
- Package / Case: 6-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 6-SO
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Package: 6-SOIC (0.295", 7.50mm Width) |
Stock7,092 |
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Toshiba Semiconductor and Storage |
X34 PB-F 8-BIT SHIFT REGISTER/LA
- Logic Type: Shift Register
- Output Type: Push-Pull
- Number of Elements: 1
- Number of Bits per Element: 8
- Function: Serial to Parallel
- Voltage - Supply: 2V ~ 5.5V
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOPB
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Package: 16-TSSOP (0.173", 4.40mm Width) |
Stock19,500 |
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Toshiba Semiconductor and Storage |
DIODE ZENER 10V 700MW SFLAT
- Voltage - Zener (Nom) (Vz): 10 V
- Tolerance: ±10%
- Power - Max: 700 mW
- Impedance (Max) (Zzt): 30 Ohms
- Current - Reverse Leakage @ Vr: 10 µA @ 6 V
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: S-FLAT (1.6x3.5)
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Package: - |
Stock8,865 |
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Toshiba Semiconductor and Storage |
AUTO AEC-Q SS MOS N-CH LOGIC-LEV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP-F
- Package / Case: 6-SMD, Flat Leads
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Package: - |
Stock22,260 |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 20V 0.5A UF6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate, 1.5V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
- Power - Max: 500mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: UF6
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Package: - |
Stock34,851 |
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Toshiba Semiconductor and Storage |
DTMOS VI TOLL PD=150W F=1MHZ
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 730µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: TOLL
- Package / Case: 8-PowerSFN
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Package: - |
Stock11,889 |
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Toshiba Semiconductor and Storage |
AUTO AEC-Q TR NPNX2 BRT, Q1BSR=2
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22kOhms
- Resistor - Emitter Base (R2) (Ohms): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Package: - |
Stock18,000 |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock549 |
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Toshiba Semiconductor and Storage |
TJ20A10M3(STA4,Q
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 90mOhm @ 10A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
150V U-MOS VIII-H SOP-ADVANCE(N)
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 74A (Ta), 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
- Rds On (Max) @ Id, Vgs: 15.4mOhm @ 19A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5.75)
- Package / Case: 8-PowerTDFN
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Package: - |
Request a Quote |
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