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Toshiba Semiconductor and Storage |
MOSFET N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-92MOD
- Package / Case: TO-226-3, TO-92-3 Long Body
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Package: TO-226-3, TO-92-3 Long Body |
Stock7,456 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13A TO-220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 380 mOhm @ 6.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock14,328 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 200V 21A 8-SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
- Rds On (Max) @ Id, Vgs: 64 mOhm @ 6.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock4,912 |
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Toshiba Semiconductor and Storage |
TRANS NPN 400MA 80V TO226-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 400mA
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
- Power - Max: 800mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Package: TO-226-3, TO-92-3 Long Body |
Stock2,768 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.1W USM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
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Package: SC-70, SOT-323 |
Stock5,920 |
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Toshiba Semiconductor and Storage |
TRANS 2PNP PREBIAS 0.3W SMV
- Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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Package: SC-74A, SOT-753 |
Stock6,656 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 2.5V 150MA PWMINI
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 16V
- Voltage - Output (Min/Fixed): 2.5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.5V @ 100mA
- Current - Output: 150mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 800µA ~ 5mA
- PSRR: 70dB (120Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PW-MINI (SOT-89)
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Package: TO-243AA |
Stock6,656 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 9V 1A 5HSIP
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 16V
- Voltage - Output (Min/Fixed): 9V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.69V @ 1A (Typ)
- Current - Output: 1A
- Current - Quiescent (Iq): -
- Current - Supply (Max): 1.7mA ~ 20mA
- PSRR: 55dB (120Hz)
- Control Features: Enable
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-6, DPak (5 Leads + Tab)
- Supplier Device Package: 5-HSIP
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Package: TO-252-6, DPak (5 Leads + Tab) |
Stock18,276 |
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Toshiba Semiconductor and Storage |
IC MOTOR DRIVER PAR 16WQFN
- Motor Type - Stepper: -
- Motor Type - AC, DC: Brushed DC
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (4)
- Interface: PWM, Serial
- Technology: Power MOSFET
- Step Resolution: -
- Applications: General Purpose
- Current - Output: 800mA
- Voltage - Supply: 2.7 V ~ 5.5 V
- Voltage - Load: 2.5 V ~ 13.5 V
- Operating Temperature: -20°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-WFQFN Exposed Pad
- Supplier Device Package: 16-WQFN (3x3)
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Package: 16-WFQFN Exposed Pad |
Stock7,376 |
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Toshiba Semiconductor and Storage |
IC EEPROM 4GBIT 25NS 48TSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM - NAND
- Memory Size: 8Gb (1G x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP I
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Package: 48-TFSOP (0.724", 18.40mm Width) |
Stock3,680 |
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Toshiba Semiconductor and Storage |
IC MULTIPLEXER 1 X 2:1 16TSSOP
- Type: Multiplexer
- Circuit: 1 x 2:1
- Independent Circuits: 4
- Current - Output High, Low: 24mA, 24mA
- Voltage Supply Source: Single Supply
- Voltage - Supply: 1.2 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOP
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Package: 16-TSSOP (0.173", 4.40mm Width) |
Stock23,820 |
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Toshiba Semiconductor and Storage |
IC GATE NAND DUAL 2 IN US8
- Logic Type: NAND Gate
- Number of Circuits: 2
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 1.65 V ~ 5.5 V
- Current - Quiescent (Max): 10µA
- Current - Output High, Low: 32mA, 32mA
- Logic Level - Low: -
- Logic Level - High: -
- Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: US8
- Package / Case: 8-VFSOP (0.091", 2.30mm Width)
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Package: 8-VFSOP (0.091", 2.30mm Width) |
Stock28,248 |
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Toshiba Semiconductor and Storage |
IC D-TYPE POS TRG SNGL 20DIP
- Function: Standard
- Type: D-Type
- Output Type: Tri-State, Non-Inverted
- Number of Elements: 1
- Number of Bits per Element: 8
- Clock Frequency: 59MHz
- Max Propagation Delay @ V, Max CL: 33ns @ 6V, 150pF
- Trigger Type: Positive Edge
- Current - Output High, Low: 7.8mA, 7.8mA
- Voltage - Supply: 2 V ~ 6 V
- Current - Quiescent (Iq): 4µA
- Input Capacitance: 5pF
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 20-DIP (0.300", 7.62mm)
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Package: 20-DIP (0.300", 7.62mm) |
Stock17,286 |
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Toshiba Semiconductor and Storage |
IC COUNTER BIN 12 STAGE 16SOP
- Logic Type: Binary Counter
- Direction: Up
- Number of Elements: 1
- Number of Bits per Element: 12
- Reset: Asynchronous
- Timing: -
- Count Rate: 125MHz
- Trigger Type: Negative Edge
- Voltage - Supply: 2 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 16-SOP
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Package: 16-SOIC (0.209", 5.30mm Width) |
Stock18,606 |
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Toshiba Semiconductor and Storage |
TVS DIODE 3VWM USV
- Type: Zener
- Unidirectional Channels: 4
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 3V
- Voltage - Breakdown (Min): 5.8V
- Voltage - Clamping (Max) @ Ipp: -
- Current - Peak Pulse (10/1000µs): -
- Power - Peak Pulse: -
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 55pF @ 1MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: USV
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Package: 5-TSSOP, SC-70-5, SOT-353 |
Stock27,216 |
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Toshiba Semiconductor and Storage |
TVS DIODE 2.5VWM USV
- Type: Zener
- Unidirectional Channels: 4
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 2.5V
- Voltage - Breakdown (Min): 5.3V
- Voltage - Clamping (Max) @ Ipp: -
- Current - Peak Pulse (10/1000µs): -
- Power - Peak Pulse: -
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 65pF @ 1MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: USV
|
Package: 5-TSSOP, SC-70-5, SOT-353 |
Stock27,054 |
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Toshiba Semiconductor and Storage |
OPTOISOLATOR 5KV TRIAC 6DIP 5L
- Output Type: Triac
- Zero Crossing Circuit: Yes
- Number of Channels: 1
- Voltage - Isolation: 5000Vrms
- Voltage - Off State: 400V
- Static dV/dt (Min): 200V/µs
- Current - LED Trigger (Ift) (Max): 5mA
- Current - On State (It (RMS)) (Max): 100mA
- Current - Hold (Ih): 600µA (Typ)
- Turn On Time: -
- Voltage - Forward (Vf) (Typ): 1.15V
- Current - DC Forward (If) (Max): 50mA
- Operating Temperature: -40°C ~ 100°C
- Mounting Type: Through Hole
- Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
- Supplier Device Package: 6-DIP (Cut), 5 Lead
- Approvals: BSI, SEMKO, UR
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Package: 6-DIP (0.300", 7.62mm), 5 Leads |
Stock15,888 |
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Toshiba Semiconductor and Storage |
X34 PB-F CMOS BUS SWITCHES (DUAL
- Type: Bus Bar - Central
- Circuit: 2 x 1:1
- Independent Circuits: 1
- Current - Output High, Low: -
- Voltage Supply Source: Dual Supply
- Voltage - Supply: 1.65 V ~ 5 V, 2.3 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 8-VFSOP (0.091", 2.30mm Width)
- Supplier Device Package: US8
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Package: 8-VFSOP (0.091", 2.30mm Width) |
Stock23,550 |
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Toshiba Semiconductor and Storage |
TRANSISTOR ARRAY INTERFACE DRIVE
- Switch Type: General Purpose
- Number of Outputs: 8
- Ratio - Input:Output: 8:8
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: -
- Voltage - Load: 0 ~ 50 V
- Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
- Current - Output (Max): 500mA
- Rds On (Typ): 1 Ohm
- Input Type: Inverting
- Features: -
- Fault Protection: -
- Operating Temperature: -40°C ~ 85°C
- Package / Case: 18-LSOP (0.173", 4.40mm Width)
- Supplier Device Package: 18-SSOP
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Package: 18-LSOP (0.173", 4.40mm Width) |
Stock33,396 |
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Toshiba Semiconductor and Storage |
IC REG LIN 3.3V 300MA 4WCSP-F
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 3.3V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.273V @ 300mA
- Current - Output: 300mA
- Current - Quiescent (Iq): 680nA
- Current - Supply (Max): -
- PSRR: 70dB (1kHz)
- Control Features: Enable
- Protection Features: Inrush Current, Over Current, Thermal Shutdown
- Operating Temperature: -40°C ~ 85°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-XFBGA, WLCSP
- Supplier Device Package: 4-WCSP-F (0.65x0.65)
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Package: 4-XFBGA, WLCSP |
Stock5,856 |
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Toshiba Semiconductor and Storage |
X34 DUAL-SUPPLY LEVEL SHIFT SPDT
- Type: Bus Switch
- Circuit: 2 x 1:2
- Independent Circuits: 1
- Current - Output High, Low: -
- Voltage Supply Source: Dual Supply
- Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 14-VFSOP (0.118", 3.00mm Width)
- Supplier Device Package: 14-VSSOP
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Package: 14-VFSOP (0.118", 3.00mm Width) |
Stock23,514 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 90A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V
- Vgs (Max): +10V, -20V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock19,155 |
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Toshiba Semiconductor and Storage |
UFV POINT DDRULATOR (LF) VOUT: 2
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 15V
- Voltage - Output (Min/Fixed): 2.5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.2V @ 50mA
- Current - Output: 200mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 850 µA
- PSRR: 70dB (1kHz)
- Control Features: Enable
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD (5 Leads), Flat Lead
- Supplier Device Package: UFV
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Package: - |
Stock8,970 |
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Toshiba Semiconductor and Storage |
IC BRUSHED MOTOR DRVR 8TSSOP
- Motor Type - Stepper: Bipolar
- Motor Type - AC, DC: Brushed DC
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge
- Interface: -
- Technology: Power MOSFET
- Step Resolution: -
- Applications: General Purpose
- Current - Output: 3A
- Voltage - Supply: 4.5V ~ 44V
- Voltage - Load: 4.5V ~ 44V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-HSOP
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Package: - |
Stock95,028 |
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Toshiba Semiconductor and Storage |
STEPPING MOTOR CONTROL DRIVER IC
- Motor Type - Stepper: Bipolar
- Motor Type - AC, DC: -
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (4)
- Interface: On/Off
- Technology: DMOS
- Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
- Applications: General Purpose
- Current - Output: 1.6A
- Voltage - Supply: 8.2V ~ 44V
- Voltage - Load: 8.2V ~ 44V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
- Supplier Device Package: 28-HTSSOP
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Package: - |
Stock11,994 |
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Toshiba Semiconductor and Storage |
TRANS PNP 50V 0.15A SMINI
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 200 mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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Package: - |
Stock59,946 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 200A TO220SM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 14920 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: TO-220SM(W)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock3,000 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 3.5A UFM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: UFM
- Package / Case: 3-SMD, Flat Lead
|
Package: - |
Stock10,956 |
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