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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 4.7A TSM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 31 mOhm @ 4A, 4V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSM
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,336 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 200V 7.2A 8TSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta), 39W (Tc)
- Rds On (Max) @ Id, Vgs: 114 mOhm @ 3.6A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance (3.3x3.3)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock60,000 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 38.8A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 300V
- Vgs (Max): ±30V
- FET Feature: Super Junction
- Power Dissipation (Max): 270W (Tc)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 19.4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P(N)
- Package / Case: TO-3P-3, SC-65-3
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Package: TO-3P-3, SC-65-3 |
Stock6,072 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A TO-220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 10V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock7,440 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 100V 60A SOP ADV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 30A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock7,984 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 15A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 7.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,936 |
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Toshiba Semiconductor and Storage |
TRANS NPN 50MA 600V TO226-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 600V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V
- Power - Max: 900mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Package: TO-226-3, TO-92-3 Long Body |
Stock3,888 |
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Toshiba Semiconductor and Storage |
TRANS PNP 20V 5A PW-MOLD
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
- Power - Max: 1W
- Frequency - Transition: 170MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PW-MOLD
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock74,520 |
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Toshiba Semiconductor and Storage |
TRANS NPN 50V 0.15A SOT23-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 320mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock22,998 |
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Toshiba Semiconductor and Storage |
DIODE SW 80V 100MA USM SC70
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io) (per Diode): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 500nA @ 80V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
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Package: SC-70, SOT-323 |
Stock5,936 |
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Toshiba Semiconductor and Storage |
IC MOTOR DRIVER PWM 16WQFN
- Motor Type - Stepper: -
- Motor Type - AC, DC: Brushless DC (BLDC)
- Function: Controller - Commutation, Direction Management
- Output Configuration: Pre-Driver - Half Bridge (2)
- Interface: PWM
- Technology: Power MOSFET
- Step Resolution: -
- Applications: General Purpose
- Current - Output: -
- Voltage - Supply: 3.5 V ~ 16 V
- Voltage - Load: -
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-WFQFN Exposed Pad
- Supplier Device Package: 16-WQFN (3x3)
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Package: 16-WFQFN Exposed Pad |
Stock2,768 |
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Toshiba Semiconductor and Storage |
IC MOTOR CTRL DVR 3PH 24SSOP
- Motor Type - Stepper: -
- Motor Type - AC, DC: Brushless DC (BLDC)
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (3)
- Interface: Analog
- Technology: Power MOSFET
- Step Resolution: -
- Applications: General Purpose
- Current - Output: 1A
- Voltage - Supply: 5.5 V ~ 22 V
- Voltage - Load: 5.5 V ~ 22 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-LSSOP (0.220", 5.60mm Width)
- Supplier Device Package: 24-SSOP
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Package: 24-LSSOP (0.220", 5.60mm Width) |
Stock15,606 |
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Toshiba Semiconductor and Storage |
IC LED DRVR CONST CURR 24HTSSOP
- Type: Linear
- Topology: Shift Register
- Internal Switch(s): Yes
- Number of Outputs: 16
- Voltage - Supply (Min): 3V
- Voltage - Supply (Max): 5.5V
- Voltage - Output: 17V
- Current - Output / Channel: 90mA
- Frequency: -
- Dimming: -
- Applications: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
- Supplier Device Package: 24-HTSSOP
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Package: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad |
Stock306,828 |
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Toshiba Semiconductor and Storage |
IC INVERTER 2CH 6SSOP
- Logic Type: Inverter
- Number of Circuits: 2
- Number of Inputs: 2
- Features: Open Drain
- Voltage - Supply: 1.65 V ~ 5.5 V
- Current - Quiescent (Max): 1µA
- Current - Output High, Low: -, 32mA
- Logic Level - Low: -
- Logic Level - High: -
- Max Propagation Delay @ V, Max CL: 3.5ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: US6
- Package / Case: 6-VSSOP, SC-88, SOT-363
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Package: 6-VSSOP, SC-88, SOT-363 |
Stock24,834 |
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Toshiba Semiconductor and Storage |
IC BUS TRANSCVR 8BIT 20TSSOP
- Logic Type: Transceiver, Non-Inverting
- Number of Elements: 1
- Number of Bits per Element: 8
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 8mA, 8mA
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 20-TSSOP
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Package: 20-TSSOP (0.173", 4.40mm Width) |
Stock3,792 |
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Toshiba Semiconductor and Storage |
IC BUS BUFFER QUAD N-INV 14TSSOP
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 4
- Number of Bits per Element: 1
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 4mA, 4mA
- Voltage - Supply: 2 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 14-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 14-TSSOP
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Package: 14-TSSOP (0.173", 4.40mm Width) |
Stock3,088 |
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Toshiba Semiconductor and Storage |
IC BUFFER NON-INVERT 5.5V 14SOP
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 6
- Number of Bits per Element: 1
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 4mA, 4mA
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 14-SOP
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Package: 14-SOIC (0.209", 5.30mm Width) |
Stock29,886 |
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Toshiba Semiconductor and Storage |
IC DRIVER DARL 8CH 50V .5A 18DIP
- Type: Driver
- Protocol: -
- Number of Drivers/Receivers: 8/0
- Duplex: -
- Receiver Hysteresis: -
- Data Rate: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: 18-DIP (0.300", 7.62mm)
- Supplier Device Package: 18-DIP
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Package: 18-DIP (0.300", 7.62mm) |
Stock6,128 |
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Toshiba Semiconductor and Storage |
LED LETERAS WARM WHT 2700K 2SMD
- Color: White, Warm
- CCT (K): 2700K
- Flux @ 85°C, Current - Test: -
- Flux @ 25°C, Current - Test: 112 lm (Typ)
- Current - Test: 350mA
- Voltage - Forward (Vf) (Typ): 2.85V
- Lumens/Watt @ Current - Test: 112 lm/W
- CRI (Color Rendering Index): 80
- Current - Max: 1A
- Viewing Angle: 100°
- Mounting Type: Surface Mount
- Package / Case: 1414 (3535 Metric)
- Supplier Device Package: 3535
- Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
- Height - Seated (Max): 0.099" (2.52mm)
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Package: 1414 (3535 Metric) |
Stock2,100 |
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Toshiba Semiconductor and Storage |
IC PHOTORELAY MOSFET 4-SOP
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 50 Ohm
- Load Current: 100mA
- Voltage - Input: 1.15VDC
- Voltage - Load: 0 ~ 350 V
- Mounting Type: Surface Mount
- Termination Style: Gull Wing
- Package / Case: 4-SOP (0.173", 4.40mm)
- Supplier Device Package: 4-SOP (2.54mm)
- Relay Type: Relay
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Package: 4-SOP (0.173", 4.40mm) |
Stock7,308 |
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Toshiba Semiconductor and Storage |
BRUSHED MOTOR DRIVER IC, 7V, 1-C
- Motor Type - Stepper: -
- Motor Type - AC, DC: -
- Function: -
- Output Configuration: -
- Interface: -
- Technology: -
- Step Resolution: -
- Applications: -
- Current - Output: -
- Voltage - Supply: -
- Voltage - Load: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock6,880 |
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Toshiba Semiconductor and Storage |
IC GATE NAND 4CH 2-INP 14SOIC
- Logic Type: NAND Gate
- Number of Circuits: 4
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Current - Quiescent (Max): 1µA
- Current - Output High, Low: 4mA, 4mA
- Logic Level - Low: 0.8V
- Logic Level - High: 2V
- Max Propagation Delay @ V, Max CL: 17ns @ 5.5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-SOIC
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
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Package: 14-SOIC (0.154", 3.90mm Width) |
Stock9,024 |
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Toshiba Semiconductor and Storage |
X34 MONOSTABLE MULTIVIBRATOR MUL
- Logic Type: Monostable
- Independent Circuits: 1
- Schmitt Trigger Input: Yes
- Propagation Delay: -
- Current - Output High, Low: 8mA, 8mA
- Voltage - Supply: 2V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 16-TFSOP (0.118", 3.00mm Width)
- Supplier Device Package: 16-VSSOP
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Package: 16-TFSOP (0.118", 3.00mm Width) |
Stock39,366 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 50V 0.1A SC70
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 22 kOhms
- Resistor - Emitter Base (R2) (Ohms): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
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Package: - |
Stock17,820 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 7A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock8,715 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 50V 0.1A VESM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 10 kOhms
- Resistor - Emitter Base (R2) (Ohms): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
|
Package: - |
Stock3 |
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Toshiba Semiconductor and Storage |
DIODE SIL CARB 650V 12A TO220-2L
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 90 µA @ 650 V
- Capacitance @ Vr, F: 65pF @ 650V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2L
- Operating Temperature - Junction: 175°C (Max)
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Package: - |
Stock9 |
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Toshiba Semiconductor and Storage |
DIODE ZENER 13V 700MW SFLAT
- Voltage - Zener (Nom) (Vz): 13 V
- Tolerance: ±10%
- Power - Max: 700 mW
- Impedance (Max) (Zzt): 30 Ohms
- Current - Reverse Leakage @ Vr: 10 µA @ 9 V
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: S-FLAT (1.6x3.5)
|
Package: - |
Stock8,700 |
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