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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 30A SOP-8 ADV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2846pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
- Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 15A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock5,504 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 2.5A TO-220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 1.3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock2,656 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 1.4A CST3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 390 mOhm @ 800mA, 4.5V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: CST3
- Package / Case: SC-101, SOT-883
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Package: SC-101, SOT-883 |
Stock4,288 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 0.1A U-MOS III
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: VESM
- Package / Case: SOT-723
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Package: SOT-723 |
Stock1,276,044 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.18A VESM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: VESM
- Package / Case: SOT-723
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Package: SOT-723 |
Stock96,000 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.25A VESM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: VESM
- Package / Case: SOT-723
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Package: SOT-723 |
Stock342,000 |
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Toshiba Semiconductor and Storage |
TRANS NPN 50V 0.15A SSM
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
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Package: SC-75, SOT-416 |
Stock25,926 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 0.1W CST3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
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Package: SC-101, SOT-883 |
Stock3,440 |
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Toshiba Semiconductor and Storage |
TRANS 2NPN PREBIAS 0.3W SMV
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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Package: SC-74A, SOT-753 |
Stock36,000 |
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Toshiba Semiconductor and Storage |
TRANS 2PNP PREBIAS 0.1W ES6
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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Package: SOT-563, SOT-666 |
Stock28,638 |
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Toshiba Semiconductor and Storage |
TRANS NPN/PNP PREBIAS 0.2W US6
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100µA (ICBO)
- Frequency - Transition: 250MHz, 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock28,392 |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 2A MFLAT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: M-FLAT (2.4x3.8)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: SOD-128 |
Stock2,512 |
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Toshiba Semiconductor and Storage |
DIODE ARRAY GP 80V 100MA SSM
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io) (per Diode): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 500nA @ 80V
- Operating Temperature - Junction: 125°C (Max)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
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Package: SC-75, SOT-416 |
Stock28,032 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 5V 1A PW-MOLD
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 16V
- Voltage - Output (Min/Fixed): 5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.69V @ 1A (Typ)
- Current - Output: 1A
- Current - Quiescent (Iq): -
- Current - Supply (Max): 1.7mA ~ 20mA
- PSRR: 60dB (120Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PW-MOLD
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,664 |
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Toshiba Semiconductor and Storage |
IC STEP MOTOR DRVR PAR 36WQFN
- Motor Type - Stepper: Bipolar
- Motor Type - AC, DC: -
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (4)
- Interface: Parallel
- Technology: BiCDMOS
- Step Resolution: 1, 1/2, 1/4
- Applications: General Purpose
- Current - Output: 2A
- Voltage - Supply: 4.75 V ~ 5.25 V
- Voltage - Load: 10 V ~ 35 V
- Operating Temperature: -20°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 36-WFQFN Exposed Pad
- Supplier Device Package: 36-WQFN (6x6)
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Package: 36-WFQFN Exposed Pad |
Stock30,714 |
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Toshiba Semiconductor and Storage |
IC GATE NOR 4CH 2-INP 14-TSSOP
- Logic Type: NOR Gate
- Number of Circuits: 4
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 2 V ~ 5.5 V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: 8mA, 8mA
- Logic Level - Low: 0.5V
- Logic Level - High: 1.5V
- Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-TSSOP
- Package / Case: 14-TSSOP (0.173", 4.40mm Width)
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Package: 14-TSSOP (0.173", 4.40mm Width) |
Stock4,944 |
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Toshiba Semiconductor and Storage |
IC INVERTER UNBUFFERED 5-SSOP
- Logic Type: Inverter
- Number of Circuits: 1
- Number of Inputs: 1
- Features: -
- Voltage - Supply: 1.8 V ~ 5.5 V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: 16mA, 16mA
- Logic Level - Low: -
- Logic Level - High: -
- Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: SMV
- Package / Case: SC-74A, SOT-753
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Package: SC-74A, SOT-753 |
Stock4,592 |
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Toshiba Semiconductor and Storage |
IC INVERTER HEX 14TSSOP
- Logic Type: Inverter
- Number of Circuits: 6
- Number of Inputs: 6
- Features: Schmitt Trigger
- Voltage - Supply: 4.5 V ~ 5.5 V
- Current - Quiescent (Max): 4µA
- Current - Output High, Low: 24mA, 24mA
- Logic Level - Low: 0.8V
- Logic Level - High: 2V
- Max Propagation Delay @ V, Max CL: 11.4ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-TSSOP
- Package / Case: 14-TSSOP (0.173", 4.40mm Width)
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Package: 14-TSSOP (0.173", 4.40mm Width) |
Stock19,248 |
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Toshiba Semiconductor and Storage |
TVS DIODE 5VWM 15VC
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 5V (Max)
- Voltage - Breakdown (Min): 6V
- Voltage - Clamping (Max) @ Ipp: 15V (Typ)
- Current - Peak Pulse (10/1000µs): 1A (8/20µs)
- Power - Peak Pulse: -
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 0.5pF @ 1MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: fSC
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Package: 2-SMD, Flat Lead |
Stock2,736 |
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Toshiba Semiconductor and Storage |
TVS DIODE 5VWM 9VC SOD923
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 5V (Max)
- Voltage - Breakdown (Min): 6.4V
- Voltage - Clamping (Max) @ Ipp: 9V (Typ)
- Current - Peak Pulse (10/1000µs): 1A (8/20µs)
- Power - Peak Pulse: -
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 25pF @ 1MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SOD-923
- Supplier Device Package: SOD-923
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Package: SOD-923 |
Stock289,440 |
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Toshiba Semiconductor and Storage |
PHOTORELAY SPST-NO 5A 60V
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 50 mOhm
- Load Current: 5A
- Voltage - Input: 1.64VDC
- Voltage - Load: 0 ~ 60 V
- Mounting Type: Surface Mount
- Termination Style: Gull Wing
- Package / Case: 8-SMD (0.300", 7.62mm)
- Supplier Device Package: 8-SMD
- Relay Type: Relay
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Package: 8-SMD (0.300", 7.62mm) |
Stock4,230 |
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Toshiba Semiconductor and Storage |
PHOTOCOUPLER GAAS IRED/FET 4-SOP
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 35 Ohm
- Load Current: 120mA
- Voltage - Input: 1.15VDC
- Voltage - Load: 0 ~ 350 V
- Mounting Type: Surface Mount
- Termination Style: Gull Wing
- Package / Case: 4-SOP (0.173", 4.40mm)
- Supplier Device Package: 4-SOP (2.54mm)
- Relay Type: Relay
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Package: 4-SOP (0.173", 4.40mm) |
Stock8,694 |
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Toshiba Semiconductor and Storage |
OPTOISOLATOR 5KV TRANS 6-SDIP GW
- Number of Channels: 1
- Voltage - Isolation: 5000Vrms
- Current Transfer Ratio (Min): 20% @ 16mA
- Current Transfer Ratio (Max): -
- Turn On / Turn Off Time (Typ): 800ns, 800ns (Max)
- Rise / Fall Time (Typ): -
- Input Type: DC
- Output Type: Transistor
- Voltage - Output (Max): 20V
- Current - Output / Channel: 8mA
- Voltage - Forward (Vf) (Typ): 1.65V
- Current - DC Forward (If) (Max): 25mA
- Vce Saturation (Max): -
- Operating Temperature: -55°C ~ 100°C
- Mounting Type: Surface Mount
- Package / Case: 6-SOIC (0.268", 6.80mm Width)
- Supplier Device Package: 6-SDIP Gull Wing
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Package: 6-SOIC (0.268", 6.80mm Width) |
Stock5,472 |
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Toshiba Semiconductor and Storage |
TRANSISTOR ARRAY INTERFACE DRIVE
- Switch Type: -
- Number of Outputs: -
- Ratio - Input:Output: -
- Output Configuration: -
- Output Type: -
- Interface: -
- Voltage - Load: -
- Voltage - Supply (Vcc/Vdd): -
- Current - Output (Max): -
- Rds On (Typ): -
- Input Type: -
- Features: -
- Fault Protection: -
- Operating Temperature: -
- Package / Case: 18-DIP (0.300", 7.62mm)
- Supplier Device Package: 18-DIP
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Package: 18-DIP (0.300", 7.62mm) |
Stock13,806 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 50V SOT23-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 22 kOhms
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 320 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: - |
Stock9,000 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 160A TO220SM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 205W (Tc)
- Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: TO-220SM(W)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock3,000 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 50V 0.1A SSM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 22 kOhms
- Resistor - Emitter Base (R2) (Ohms): 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
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Package: - |
Stock18,000 |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 2A S-FLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 30 V
- Capacitance @ Vr, F: 90pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: S-FLAT (1.6x3.5)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Request a Quote |
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