|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 14A TO-220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 550V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 370 mOhm @ 7A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock2,976 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 2A 50V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
|
Package: TO-226-3, TO-92-3 Long Body |
Stock2,432 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 120V 0.1A S-MINI
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
- Power - Max: 150mW
- Frequency - Transition: 100MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,880 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 230V 15A TO-3PN
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 230V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Power - Max: 130W
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P(N)
|
Package: TO-3P-3, SC-65-3 |
Stock9,948 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS NPN/PNP PREBIAS 0.3W SM6
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SM6
|
Package: SC-74, SOT-457 |
Stock2,336 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS 2PNP PREBIAS 0.1W ESV
- Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
|
Package: SOT-553 |
Stock5,136 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS 2PNP PREBIAS 0.1W ES6
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
|
Package: SOT-563, SOT-666 |
Stock33,654 |
|
|
|
Toshiba Semiconductor and Storage |
DIODE ARRAY GP 80V 80MA US6
- Diode Configuration: 2 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io) (per Diode): 80mA
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 500nA @ 80V
- Operating Temperature - Junction: 125°C (Max)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock3,440 |
|
|
|
Toshiba Semiconductor and Storage |
IC REG LINEAR 24V 150MA PW-MINI
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 40V
- Voltage - Output (Min/Fixed): 24V
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 150mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 6mA ~ 6.5mA
- PSRR: 35dB (120Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -30°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PW-MINI (SOT-89)
|
Package: TO-243AA |
Stock5,232 |
|
|
|
Toshiba Semiconductor and Storage |
IC EEPROM 4GBIT 25NS 48TSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM - NAND
- Memory Size: 4Gb (512M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP I
|
Package: 48-TFSOP (0.724", 18.40mm Width) |
Stock12,672 |
|
|
|
Toshiba Semiconductor and Storage |
IC INVERTER HS C2MOS SSOP5
- Logic Type: Inverter
- Number of Circuits: 1
- Number of Inputs: 1
- Features: -
- Voltage - Supply: 2 V ~ 6 V
- Current - Quiescent (Max): 1µA
- Current - Output High, Low: 2.6mA, 2.6mA
- Logic Level - Low: 0.5 V ~ 1.8 V
- Logic Level - High: 1.5 V ~ 4.2 V
- Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: USV
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
|
Package: 5-TSSOP, SC-70-5, SOT-353 |
Stock334,764 |
|
|
|
Toshiba Semiconductor and Storage |
IC INVERTER GATE TTL 5-SSOP
- Logic Type: Inverter
- Number of Circuits: 1
- Number of Inputs: 1
- Features: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: 8mA, 8mA
- Logic Level - Low: 0.8V
- Logic Level - High: 2V
- Max Propagation Delay @ V, Max CL: 10.5ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: USV
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
|
Package: 5-TSSOP, SC-70-5, SOT-353 |
Stock768,924 |
|
|
|
Toshiba Semiconductor and Storage |
IC COUNTER BINARY DUAL 14-TSSOP
- Logic Type: Binary Counter
- Direction: Up
- Number of Elements: 2
- Number of Bits per Element: 4
- Reset: Asynchronous
- Timing: -
- Count Rate: 170MHz
- Trigger Type: Negative Edge
- Voltage - Supply: 2 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 14-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 14-TSSOP
|
Package: 14-TSSOP (0.173", 4.40mm Width) |
Stock7,168 |
|
|
|
Toshiba Semiconductor and Storage |
IC BUFF/DVR DUAL LV 20TSSOP
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 2
- Number of Bits per Element: 4
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 24mA, 24mA
- Voltage - Supply: 1.65 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 20-TSSOP
|
Package: 20-TSSOP (0.173", 4.40mm Width) |
Stock49,440 |
|
|
|
Toshiba Semiconductor and Storage |
IC MCU 8BIT 16KB OTP 44LQFP
- Core Processor: -
- Core Size: 8-Bit
- Speed: 16MHz
- Connectivity: EBI/EMI
- Peripherals: -
- Number of I/O: 8
- Program Memory Size: 16KB (16K x 8)
- Program Memory Type: OTP
- EEPROM Size: -
- RAM Size: 512 x 8
- Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
- Data Converters: -
- Oscillator Type: External
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 44-LQFP
- Supplier Device Package: 44-LQFP (10x10)
|
Package: 44-LQFP |
Stock3,920 |
|
|
|
Toshiba Semiconductor and Storage |
LCD 5.7INCH 320X240 QVGA
- Display Type: TFT - Color
- Display Mode: Transmissive
- Touchscreen: -
- Diagonal Screen Size: 5.7" (144.78mm)
- Viewing Area: 115.20mm W x 86.40mm H
- Backlight: LED - White
- Dot Pixels: 320 x 240 (QVGA)
- Interface: Parallel, 18-Bit (RGB)
- Graphics Color: Red, Green, Blue (RGB)
- Background Color: -
|
Package: - |
Stock4,032 |
|
|
|
Toshiba Semiconductor and Storage |
PHOTORELAY MOSFET 50MA 6-SOP
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 50 Ohm
- Load Current: 50mA
- Voltage - Input: 1.15VDC
- Voltage - Load: 0 ~ 200 V
- Mounting Type: Surface Mount
- Termination Style: Gull Wing
- Package / Case: 6-SOP (0.173", 4.40mm)
- Supplier Device Package: 6-SOP (2.54mm)
- Relay Type: Relay
|
Package: 6-SOP (0.173", 4.40mm) |
Stock8,370 |
|
|
|
Toshiba Semiconductor and Storage |
OPTOISO 3.75KV TRANS 6-SO 4 LEAD
- Number of Channels: 1
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 200% @ 5mA
- Current Transfer Ratio (Max): 600% @ 5mA
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): 2µs, 3µs
- Input Type: DC
- Output Type: Transistor
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.25V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 300mV
- Operating Temperature: -55°C ~ 110°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD (4 Leads), Gull Wing
- Supplier Device Package: 6-SO, 4 Lead
|
Package: 6-SMD (4 Leads), Gull Wing |
Stock5,814 |
|
|
|
Toshiba Semiconductor and Storage |
OPTOISOLTR 5KV DARLINGTON 4-SMD
- Number of Channels: 1
- Voltage - Isolation: 5000Vrms
- Current Transfer Ratio (Min): 1000% @ 1mA
- Current Transfer Ratio (Max): -
- Turn On / Turn Off Time (Typ): 50µs, 15µs
- Rise / Fall Time (Typ): 40µs, 15µs
- Input Type: DC
- Output Type: Darlington
- Voltage - Output (Max): 300V
- Current - Output / Channel: 150mA
- Voltage - Forward (Vf) (Typ): 1.15V
- Current - DC Forward (If) (Max): 60mA
- Vce Saturation (Max): 1.2V
- Operating Temperature: -55°C ~ 100°C
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Gull Wing
- Supplier Device Package: 4-SMD
|
Package: 4-SMD, Gull Wing |
Stock210,000 |
|
|
|
Toshiba Semiconductor and Storage |
LOW DROPOUT (LDO) LINEAR VOLTAGE
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 2.5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.327V @ 300mA
- Current - Output: 300mA
- Current - Quiescent (Iq): 680nA
- Current - Supply (Max): -
- PSRR: 70dB (1kHz)
- Control Features: Enable
- Protection Features: Inrush Current, Over Current, Thermal Shutdown
- Operating Temperature: -40°C ~ 85°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-XFBGA, WLCSP
- Supplier Device Package: 4-WCSP-F (0.65x0.65)
|
Package: 4-XFBGA, WLCSP |
Stock51,444 |
|
|
|
Toshiba Semiconductor and Storage |
TXZ FAMILY MCU
- Core Processor: ARM® Cortex®-M4F
- Core Size: 32-Bit
- Speed: 160MHz
- Connectivity: CEC, EBI/EMI, I²C, IrDA, SIO, SPI, SMIF, UART/USART
- Peripherals: DMA, LVD, POR, WDT
- Number of I/O: 86
- Program Memory Size: 768KB (768K x 8)
- Program Memory Type: FLASH
- EEPROM Size: 32K x 8
- RAM Size: 128K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
- Data Converters: A/D 16x12b; D/A 2x8b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-LQFP (14x14)
|
Package: 100-LQFP |
Stock7,968 |
|
|
|
Toshiba Semiconductor and Storage |
AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10kOhms
- Resistor - Emitter Base (R2) (Ohms): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz, 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
|
Package: - |
Stock20,490 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 50V 0.1A SC70
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 47 kOhms
- Resistor - Emitter Base (R2) (Ohms): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
|
Package: - |
Stock7,956 |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 165W (Tc)
- Rds On (Max) @ Id, Vgs: 175mOhm @ 10A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
|
Package: - |
Request a Quote |
|
|
|
Toshiba Semiconductor and Storage |
BRUSHEDMOTORDRIVERIC,1-CHANNEL50
- Motor Type - Stepper: Bipolar
- Motor Type - AC, DC: Brushed DC
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (4)
- Interface: PWM
- Technology: NMOS, PMOS
- Step Resolution: -
- Applications: General Purpose
- Current - Output: 6A
- Voltage - Supply: 4.75V ~ 5.25V
- Voltage - Load: 10V ~ 47V
- Operating Temperature: -20°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: 48-VQFN (7x7)
|
Package: - |
Stock12,000 |
|
|
|
Toshiba Semiconductor and Storage |
IC MOTOR DRIVER PAR 64HQFP
- Motor Type - Stepper: Bipolar
- Motor Type - AC, DC: -
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (4)
- Interface: Parallel
- Technology: -
- Step Resolution: -
- Applications: General Purpose
- Current - Output: 1.5A
- Voltage - Supply: 4.5V ~ 5.5V
- Voltage - Load: 4.5V ~ 34V
- Operating Temperature: -30°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 64-TQFP Exposed Pad
- Supplier Device Package: 64-HQFP (10x10)
|
Package: - |
Stock1,410 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 50V 0.1A SC70
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 47 kOhms
- Resistor - Emitter Base (R2) (Ohms): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
|
Package: - |
Request a Quote |
|
|
|
Toshiba Semiconductor and Storage |
DISCRETE IGBT TRANSISTOR TO-220S
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 80 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
- Power - Max: 45 W
- Switching Energy: 500µJ (on), 400µJ (off)
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 60ns/240ns
- Test Condition: 300V, 20A, 33Ohm, 15V
- Reverse Recovery Time (trr): 90 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220SIS
|
Package: - |
Stock84 |
|