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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 13A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 6.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP (5.5x6.0)
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
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Package: 8-SOIC (0.173", 4.40mm Width) |
Stock7,840 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 900V TO-3PN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 3.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P(N)
- Package / Case: TO-3P-3, SC-65-3
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Package: TO-3P-3, SC-65-3 |
Stock6,252 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 1.4A UFM
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 137pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 240 mOhm @ 650mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: UFM
- Package / Case: 3-SMD, Flat Leads
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Package: 3-SMD, Flat Leads |
Stock29,628 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 17A 8TSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta), 30W (Tc)
- Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 8.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance (3.3x3.3)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock6,224 |
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Toshiba Semiconductor and Storage |
TRANS NPN 50MA 150V TO226-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Power - Max: 800mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Package: TO-226-3, TO-92-3 Long Body |
Stock2,512 |
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Toshiba Semiconductor and Storage |
TRANS 2NPN 50V 0.15A US6
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 200mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock3,888 |
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Toshiba Semiconductor and Storage |
TRANS 2NPN PREBIAS 0.2W US6
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock2,496 |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 100MA SMINI
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 40V
- Capacitance @ Vr, F: 25pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
- Operating Temperature - Junction: 125°C (Max)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,312 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 1.15V 200MA 4SDFN
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 1.15V
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 200mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 60µA
- PSRR: 73dB (1kHz)
- Control Features: Enable
- Protection Features: Over Current
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-XFDFN Exposed Pad
- Supplier Device Package: 4-SDFN (0.8x0.8)
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Package: 4-XFDFN Exposed Pad |
Stock2,864 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 3.3V 200MA SMV
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 3.3V
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 200mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 2µA
- PSRR: -
- Control Features: Enable
- Protection Features: Over Current
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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Package: SC-74A, SOT-753 |
Stock92,382 |
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Toshiba Semiconductor and Storage |
IC EEPROM 2GBIT 25NS 48TSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM - NAND
- Memory Size: 2Gb (256M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP I
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Package: 48-TFSOP (0.724", 18.40mm Width) |
Stock4,864 |
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Toshiba Semiconductor and Storage |
IC GATE NAND 1CH 2-INP SMV
- Logic Type: NAND Gate
- Number of Circuits: 1
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 3 V ~ 18 V
- Current - Quiescent (Max): 1µA
- Current - Output High, Low: 3.4mA, 3.4mA
- Logic Level - Low: 1 V ~ 3 V
- Logic Level - High: 4 V ~ 12 V
- Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: SMV
- Package / Case: SC-74A, SOT-753
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Package: SC-74A, SOT-753 |
Stock3,568 |
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Toshiba Semiconductor and Storage |
IC GATE XOR 1CH 2-INP FSV
- Logic Type: XOR (Exclusive OR)
- Number of Circuits: 1
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 2 V ~ 5.5 V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: 8mA, 8mA
- Logic Level - Low: 0.5V
- Logic Level - High: 1.5V
- Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: fSV
- Package / Case: SOT-953
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Package: SOT-953 |
Stock3,120 |
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Toshiba Semiconductor and Storage |
IC INV HEX SCHMITT TRIG 14SOP
- Logic Type: Inverter
- Number of Circuits: 6
- Number of Inputs: 6
- Features: Schmitt Trigger
- Voltage - Supply: 2 V ~ 6 V
- Current - Quiescent (Max): 1µA
- Current - Output High, Low: 5.2mA, 5.2mA
- Logic Level - Low: 0.3 V ~ 1.5 V
- Logic Level - High: 1.5 V ~ 4.2 V
- Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-SOP
- Package / Case: 14-SOIC (0.173", 4.40mm Width)
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Package: 14-SOIC (0.173", 4.40mm Width) |
Stock23,952 |
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Toshiba Semiconductor and Storage |
IC GATE NOR QUAD 2 IN 14SOIC
- Logic Type: NOR Gate
- Number of Circuits: 4
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 2 V ~ 6 V
- Current - Quiescent (Max): 1µA
- Current - Output High, Low: 5.2mA, 5.2mA
- Logic Level - Low: 0.5 V ~ 1.8 V
- Logic Level - High: 1.5 V ~ 4.2 V
- Max Propagation Delay @ V, Max CL: 16ns @ 6V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-SOIC
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
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Package: 14-SOIC (0.154", 3.90mm Width) |
Stock21,780 |
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Toshiba Semiconductor and Storage |
LED LETERAS COOL WHT 5000K 2SMD
- Color: White, Cool
- CCT (K): 5000K
- Flux @ 85°C, Current - Test: -
- Flux @ 25°C, Current - Test: 133 lm (120 lm ~ 145 lm)
- Current - Test: 350mA
- Voltage - Forward (Vf) (Typ): 2.85V
- Lumens/Watt @ Current - Test: 133 lm/W
- CRI (Color Rendering Index): 70
- Current - Max: 550mA
- Viewing Angle: 120°
- Mounting Type: Surface Mount
- Package / Case: 2020 (5050 Metric)
- Supplier Device Package: 6450
- Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
- Height - Seated (Max): 0.057" (1.45mm)
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Package: 2020 (5050 Metric) |
Stock8,766 |
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Toshiba Semiconductor and Storage |
TXRX MOD OPTICAL 500KBPS 650NM
- Data Rate: 500kbps
- Wavelength: 650nm
- Applications: General Purpose
- Voltage - Supply: 4.75 V ~ 5.25 V
- Connector Type: JIS F07
- Mounting Type: Through Hole
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Package: - |
Stock6,192 |
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Toshiba Semiconductor and Storage |
ESD DIODE BI-DIRECTIONAL
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 5.5V (Max)
- Voltage - Breakdown (Min): 5.8V
- Voltage - Clamping (Max) @ Ipp: 20V
- Current - Peak Pulse (10/1000µs): 4A (8/20µs)
- Power - Peak Pulse: 80W
- Power Line Protection: No
- Applications: -
- Capacitance @ Frequency: 8.5pF @ 1MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-923
- Supplier Device Package: SOD-923
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Package: SOD-923 |
Stock6,588 |
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Toshiba Semiconductor and Storage |
TVS DIODE 5.5VWM 25VC SL2-2
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 5.5V (Max)
- Voltage - Breakdown (Min): 5.6V
- Voltage - Clamping (Max) @ Ipp: 25V
- Current - Peak Pulse (10/1000µs): 2A (8/20µs)
- Power - Peak Pulse: 30W
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 0.2pF @ 1MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 0201 (0603 Metric)
- Supplier Device Package: SL2
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Package: 0201 (0603 Metric) |
Stock90,918 |
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Toshiba Semiconductor and Storage |
IC PHOTOCOUPLER PHOTORELAY 4-DIP
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 50 Ohm
- Load Current: 120mA
- Voltage - Input: 1.15VDC
- Voltage - Load: 0 ~ 350 V
- Mounting Type: Through Hole
- Termination Style: PC Pin
- Package / Case: 4-DIP (0.300", 7.62mm)
- Supplier Device Package: 4-DIP
- Relay Type: Relay
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Package: 4-DIP (0.300", 7.62mm) |
Stock709,092 |
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Toshiba Semiconductor and Storage |
PHOTORELAY MOSFET OUT 3MA 8-DIP
- Circuit: DPST-NO/NC (1 Form A and B)
- Output Type: AC, DC
- On-State Resistance (Max): 25 Ohm
- Load Current: 120mA
- Voltage - Input: 1.15VDC
- Voltage - Load: 0 ~ 350 V
- Mounting Type: Through Hole
- Termination Style: PC Pin
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-DIP
- Relay Type: Relay
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Package: 8-DIP (0.300", 7.62mm) |
Stock6,408 |
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Toshiba Semiconductor and Storage |
PHOTOCOUPLER PHOTORELAY 4-SOP
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 35 Ohm
- Load Current: 120mA
- Voltage - Input: 1.15VDC
- Voltage - Load: 0 ~ 400 V
- Mounting Type: Surface Mount
- Termination Style: Gull Wing
- Package / Case: 4-SOP (0.173", 4.40mm)
- Supplier Device Package: 4-SOP (2.54mm)
- Relay Type: Relay
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Package: 4-SOP (0.173", 4.40mm) |
Stock6,804 |
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Toshiba Semiconductor and Storage |
BRUSHED DC MOTOR DRIVER DUAL-CHA
- Motor Type - Stepper: -
- Motor Type - AC, DC: -
- Function: -
- Output Configuration: -
- Interface: -
- Technology: -
- Step Resolution: -
- Applications: -
- Current - Output: -
- Voltage - Supply: -
- Voltage - Load: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock82,752 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 11A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Rds On (Max) @ Id, Vgs: 28mOhm @ 5.5A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock11,667 |
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Toshiba Semiconductor and Storage |
LDO REG, IOUT: 500MA VOUT: 1.4V
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 1.4V
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 500mA
- Current - Quiescent (Iq): 13 µA
- Current - Supply (Max): -
- PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
- Control Features: -
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-XFBGA, WLCSP
- Supplier Device Package: 4-WCSPF (0.65x0.65)
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Package: - |
Stock492 |
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Toshiba Semiconductor and Storage |
PNPX2 BRT Q1BSR47KOHM Q1BER22KOH
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47kOhms
- Resistor - Emitter Base (R2) (Ohms): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Package: - |
Stock9,000 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 50V 0.1A SSM
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 10 kOhms
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
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Package: - |
Stock9,000 |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1.5A SFLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1.5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 30 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: S-FLAT (1.6x3.5)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
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