|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 300V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 165W (Tc)
- Rds On (Max) @ Id, Vgs: 175 mOhm @ 10A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock6,384 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 800V TO220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack, Isolated Tab
|
Package: TO-220-3 Full Pack, Isolated Tab |
Stock4,784 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 30V 6A SOT-23F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 38 mOhm @ 4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23F
- Package / Case: SOT-23-3 Flat Leads
|
Package: SOT-23-3 Flat Leads |
Stock101,988 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 30V 6A 2-3Z1A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 436pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23F
- Package / Case: SOT-23-3 Flat Leads
|
Package: SOT-23-3 Flat Leads |
Stock127,020 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 2A 50V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
|
Package: TO-226-3, TO-92-3 Long Body |
Stock5,584 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.1W CST3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
|
Package: SC-101, SOT-883 |
Stock5,840 |
|
|
|
Toshiba Semiconductor and Storage |
TRANSISTOR NPN MM-USM
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 10GHz
- Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
- Gain: 13dB ~ 7.5dB
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
- Current - Collector (Ic) (Max): 15mA
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
|
Package: SC-70, SOT-323 |
Stock7,776 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS 2NPN PREBIAS 0.2W US6
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock7,008 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS NPN/PNP PREBIAS 0.2W US6
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz, 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock25,656 |
|
|
|
Toshiba Semiconductor and Storage |
DIODE VARACTOR 15V USC
- Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz
- Capacitance Ratio: 2.5
- Capacitance Ratio Condition: C2/C10
- Voltage - Peak Reverse (Max): 15V
- Diode Type: Single
- Q @ Vr, F: -
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: USC
|
Package: SC-76, SOD-323 |
Stock5,936 |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 500MA CST2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 350mV @ 100mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30µA @ 10V
- Capacitance @ Vr, F: 42pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-882
- Supplier Device Package: CST2
- Operating Temperature - Junction: 125°C (Max)
|
Package: SOD-882 |
Stock5,328 |
|
|
|
Toshiba Semiconductor and Storage |
IC CNTRLR ISOLATED 8SOP
- Type: AC DC Offline Switcher
- Topology: Flyback
- Internal Switch(s): No
- Number of Outputs: 1
- Voltage - Supply (Min): 1.8V
- Voltage - Supply (Max): 25V
- Voltage - Output: 15V
- Current - Output / Channel: -
- Frequency: 200kHz
- Dimming: Triac
- Applications: Lighting
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
- Supplier Device Package: 8-SOP
|
Package: 8-SOIC (0.173", 4.40mm Width) |
Stock2,496 |
|
|
|
Toshiba Semiconductor and Storage |
IC LED DRIVER 24VQFN
- Type: Linear
- Topology: -
- Internal Switch(s): Yes
- Number of Outputs: 9
- Voltage - Supply (Min): 7V
- Voltage - Supply (Max): 28V
- Voltage - Output: 28V
- Current - Output / Channel: 40mA
- Frequency: -
- Dimming: PWM
- Applications: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-VFQFN Exposed Pad
- Supplier Device Package: 24-VQFN (4x4)
|
Package: 24-VFQFN Exposed Pad |
Stock6,016 |
|
|
|
Toshiba Semiconductor and Storage |
1GB SERIAL NAND 24NM WSON8 3.3V
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 1Gb (128M x 8)
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 104MHz
- Write Cycle Time - Word, Page: -
- Access Time: 155µs
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (6x8)
|
Package: 8-WDFN Exposed Pad |
Stock2,448 |
|
|
|
Toshiba Semiconductor and Storage |
IC REGISTER SHIFT 8-BIT 16TSSOP
- Logic Type: Shift Register
- Output Type: Tri-State
- Number of Elements: 1
- Number of Bits per Element: 8
- Function: Serial to Parallel, Serial
- Voltage - Supply: 2 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOP
|
Package: 16-TSSOP (0.173", 4.40mm Width) |
Stock6,752 |
|
|
|
Toshiba Semiconductor and Storage |
IC BUFFER NON-INVERT 5.5V 20SOIC
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 2
- Number of Bits per Element: 4
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 6mA, 6mA
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 20-SOIC
|
Package: 20-SOIC (0.295", 7.50mm Width) |
Stock19,044 |
|
|
|
Toshiba Semiconductor and Storage |
LED LETERAS COOL WHT 5000K 2SMD
- Color: White, Cool
- CCT (K): 5000K
- Flux @ 85°C, Current - Test: -
- Flux @ 25°C, Current - Test: 77 lm (69 lm ~ 86 lm)
- Current - Test: 100mA
- Voltage - Forward (Vf) (Typ): 5.76V
- Lumens/Watt @ Current - Test: 134 lm/W
- CRI (Color Rendering Index): 70
- Current - Max: 200mA
- Viewing Angle: -
- Mounting Type: Surface Mount
- Package / Case: 1212 (3030 Metric)
- Supplier Device Package: 3030
- Size / Dimension: 0.118" L x 0.118" W (3.00mm x 3.00mm)
- Height - Seated (Max): 0.030" (0.77mm)
|
Package: 1212 (3030 Metric) |
Stock5,940 |
|
|
|
Toshiba Semiconductor and Storage |
IC PHOTORELAY MOSFET 4-SOP
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 2 Ohm
- Load Current: 400mA
- Voltage - Input: 1.15VDC
- Voltage - Load: 0 ~ 60 V
- Mounting Type: Surface Mount
- Termination Style: Gull Wing
- Package / Case: 4-SOP (0.173", 4.40mm)
- Supplier Device Package: 4-SOP (2.54mm)
- Relay Type: Relay
|
Package: 4-SOP (0.173", 4.40mm) |
Stock3,420 |
|
|
|
Toshiba Semiconductor and Storage |
PHOTOCOUPLER PHOTORELAY 4-SOP
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 2 Ohm
- Load Current: 400mA
- Voltage - Input: 1.15VDC
- Voltage - Load: 0 ~ 60 V
- Mounting Type: Surface Mount
- Termination Style: Gull Wing
- Package / Case: 4-SOP (0.173", 4.40mm)
- Supplier Device Package: 4-SOP (2.54mm)
- Relay Type: Relay
|
Package: 4-SOP (0.173", 4.40mm) |
Stock5,040 |
|
|
|
Toshiba Semiconductor and Storage |
PHOTORELAY SPST-NO 100MA 350V
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 50 Ohm
- Load Current: 100mA
- Voltage - Input: 1.27VDC
- Voltage - Load: 0 ~ 350 V
- Mounting Type: Surface Mount
- Termination Style: Gull Wing
- Package / Case: 4-SMD (0.300", 7.62mm)
- Supplier Device Package: 4-SMD
- Relay Type: Relay
|
Package: 4-SMD (0.300", 7.62mm) |
Stock22,266 |
|
|
|
Toshiba Semiconductor and Storage |
200MA LDO VOUT1.85V DROPOUT180MV
- Output Configuration: -
- Output Type: -
- Number of Regulators: -
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: -
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock6,224 |
|
|
|
Toshiba Semiconductor and Storage |
DIODE ARRAY GP 80V 100MA SSM
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io) (per Diode): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4 ns
- Current - Reverse Leakage @ Vr: 500 nA @ 80 V
- Operating Temperature - Junction: 125°C (Max)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
|
Package: - |
Request a Quote |
|
|
|
Toshiba Semiconductor and Storage |
AUTO AEC-Q TR PNPX2 BRT, Q1BSR=4
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7kOhms
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
|
Package: - |
Stock18,000 |
|
|
|
Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR DSO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta), 142W (Tc)
- Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DSOP Advance
- Package / Case: 8-PowerWDFN
|
Package: - |
Stock14,466 |
|
|
|
Toshiba Semiconductor and Storage |
IC FF D-TYPE SNGL 8BIT 20TSSOP
- Function: Reset
- Type: D-Type
- Output Type: Non-Inverted
- Number of Elements: 1
- Number of Bits per Element: 8
- Clock Frequency: 150 MHz
- Max Propagation Delay @ V, Max CL: 9.6ns @ 5V, 50pF
- Trigger Type: Positive Edge
- Current - Output High, Low: 24mA, 24mA
- Voltage - Supply: 2V ~ 5.5V
- Current - Quiescent (Iq): 8 µA
- Input Capacitance: 5 pF
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-TSSOP (0.173", 4.40mm Width)
|
Package: - |
Stock5,940 |
|
|
|
Toshiba Semiconductor and Storage |
LDO REG IOUT: 300MA VIN: 6V VOUT
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 1.85V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.457V @ 300mA
- Current - Output: 300mA
- Current - Quiescent (Iq): 680 nA
- Current - Supply (Max): -
- PSRR: -
- Control Features: Current Limit, Enable
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-UDFN Exposed Pad
- Supplier Device Package: 4-DFN (1x1)
|
Package: - |
Stock29,955 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 10A TO220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
|
Package: - |
Request a Quote |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 100MA USC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 40 V
- Capacitance @ Vr, F: 11pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: USC
- Operating Temperature - Junction: 125°C (Max)
|
Package: - |
Stock27,264 |
|